JP2013538454A5 - - Google Patents
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- Publication number
- JP2013538454A5 JP2013538454A5 JP2013526397A JP2013526397A JP2013538454A5 JP 2013538454 A5 JP2013538454 A5 JP 2013538454A5 JP 2013526397 A JP2013526397 A JP 2013526397A JP 2013526397 A JP2013526397 A JP 2013526397A JP 2013538454 A5 JP2013538454 A5 JP 2013538454A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon
- aryl
- alkyl
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 13
- 150000003377 silicon compounds Chemical class 0.000 claims description 11
- 238000009472 formulation Methods 0.000 claims description 9
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 239000008139 complexing agent Substances 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- 238000007645 offset printing Methods 0.000 claims 2
- 238000007766 curtain coating Methods 0.000 claims 1
- 238000007598 dipping method Methods 0.000 claims 1
- 238000007646 gravure printing Methods 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 230000005499 meniscus Effects 0.000 claims 1
- 125000001190 organyl group Chemical group 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 238000007764 slot die coating Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 15
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000006384 oligomerization reaction Methods 0.000 description 3
- FEJUGLKDZJDVFY-UHFFFAOYSA-N 9-borabicyclo[3.3.1]nonane Substances C1CCC2CCCC1B2 FEJUGLKDZJDVFY-UHFFFAOYSA-N 0.000 description 2
- AXXLAOYVJJFFKW-UHFFFAOYSA-N B1CCCCCCCC1C1CCCCCCCC1 Chemical compound B1CCCCCCCC1C1CCCCCCCC1 AXXLAOYVJJFFKW-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- IATIAJZZSWAZGN-UHFFFAOYSA-N B1CCCCCC1C1CCCCCC1 Chemical compound B1CCCCCC1C1CCCCCC1 IATIAJZZSWAZGN-UHFFFAOYSA-N 0.000 description 1
- APFGJTPVAMCIGV-UHFFFAOYSA-N B1CCCCCCCCCC1C1CCCCCCCCCC1 Chemical compound B1CCCCCCCCCC1C1CCCCCCCCCC1 APFGJTPVAMCIGV-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- -1 cyclic diene Chemical class 0.000 description 1
- 238000006197 hydroboration reaction Methods 0.000 description 1
- 239000012372 hydroboration reagent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010040231A DE102010040231A1 (de) | 2010-09-03 | 2010-09-03 | p-Dotierte Siliciumschichten |
| DE102010040231.1 | 2010-09-03 | ||
| PCT/EP2011/064279 WO2012028476A1 (de) | 2010-09-03 | 2011-08-19 | P-dotierte siliciumschichten |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013538454A JP2013538454A (ja) | 2013-10-10 |
| JP2013538454A5 true JP2013538454A5 (enExample) | 2016-03-24 |
| JP6099563B2 JP6099563B2 (ja) | 2017-03-22 |
Family
ID=44651674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013526397A Expired - Fee Related JP6099563B2 (ja) | 2010-09-03 | 2011-08-19 | ｐ型ドープされたシリコン層 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9362112B2 (enExample) |
| EP (2) | EP2612348B1 (enExample) |
| JP (1) | JP6099563B2 (enExample) |
| KR (1) | KR101820554B1 (enExample) |
| CN (1) | CN103069544B (enExample) |
| DE (1) | DE102010040231A1 (enExample) |
| ES (1) | ES2655491T3 (enExample) |
| MY (1) | MY158420A (enExample) |
| TW (1) | TWI605492B (enExample) |
| WO (1) | WO2012028476A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2135844A1 (de) | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Verfahren zur Herstellung höherer Hydridosilane |
| DE102008043422B3 (de) | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
| DE102009048087A1 (de) | 2009-10-02 | 2011-04-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilane |
| DE102009053805A1 (de) | 2009-11-18 | 2011-05-26 | Evonik Degussa Gmbh | Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen |
| DE102009053806A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Siliciumschichten |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102010002405A1 (de) | 2010-02-26 | 2011-09-01 | Evonik Degussa Gmbh | Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung |
| DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
| DE102010041842A1 (de) | 2010-10-01 | 2012-04-05 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilanverbindungen |
| DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
| DE102010063823A1 (de) | 2010-12-22 | 2012-06-28 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102012221669A1 (de) | 2012-11-27 | 2014-05-28 | Evonik Industries Ag | Verfahren zum Herstellen kohlenstoffhaltiger Hydridosilane |
| DE102014208054A1 (de) * | 2014-04-29 | 2015-10-29 | Evonik Degussa Gmbh | Verfahren zur Erzeugung unterschiedlich dotierter Halbleiter |
| DE102014223465A1 (de) * | 2014-11-18 | 2016-05-19 | Evonik Degussa Gmbh | Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten |
| DE102015225289A1 (de) | 2015-12-15 | 2017-06-22 | Evonik Degussa Gmbh | Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
| US11649560B2 (en) | 2019-06-20 | 2023-05-16 | Applied Materials, Inc. | Method for forming silicon-phosphorous materials |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| US5399780A (en) * | 1992-11-02 | 1995-03-21 | Tosoh Akzo Corporation | Method of producing triarylborane |
| US5866471A (en) | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
| JP2000031066A (ja) * | 1998-07-10 | 2000-01-28 | Sharp Corp | シリコン膜の形成方法及び太陽電池の製造方法 |
| US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
| EP1715509B1 (en) * | 1999-03-30 | 2011-08-24 | JSR Corporation | Method of forming silicon films |
| DE60041569D1 (de) | 1999-03-30 | 2009-04-02 | Seiko Epson Corp | Herstellungsverfahren für eine solarzelle |
| KR20010052441A (ko) * | 1999-03-30 | 2001-06-25 | 마쯔모또 에이찌 | 코팅 조성물 |
| JP4193017B2 (ja) | 2000-09-26 | 2008-12-10 | Ｊｓｒ株式会社 | ホウ素でドープされたシリコン膜の形成方法 |
| KR100627203B1 (ko) * | 2001-08-14 | 2006-09-22 | 제이에스알 가부시끼가이샤 | 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법 |
| JP2003171556A (ja) * | 2001-12-10 | 2003-06-20 | Jsr Corp | シリコン膜の形成方法およびそのための組成物 |
| JP2003313299A (ja) * | 2002-04-22 | 2003-11-06 | Seiko Epson Corp | 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法 |
| EP1640342A4 (en) | 2003-06-13 | 2006-11-22 | Jsr Corp | SILANEPOLYMER AND METHOD FOR FORMING SILICON FILM |
| JP2005223268A (ja) * | 2004-02-09 | 2005-08-18 | Seiko Epson Corp | 薄膜トランジスタの製造方法、ディスプレイの製造方法及びディスプレイ |
| US7071125B2 (en) * | 2004-09-22 | 2006-07-04 | Intel Corporation | Precursors for film formation |
| US7314513B1 (en) * | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| US7674926B1 (en) * | 2004-10-01 | 2010-03-09 | Kovio, Inc. | Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions |
| JP2006156582A (ja) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | 半導体部品および光電変換装置 |
| JP4600191B2 (ja) | 2005-07-15 | 2010-12-15 | Ｊｓｒ株式会社 | 新規芳香族化合物、スルホン化ポリアリーレンおよびその用途 |
| KR101467412B1 (ko) * | 2006-10-06 | 2014-12-01 | 코비오 인코포레이티드 | 실리콘 폴리머, 실리콘 화합물 중합법 및 실리콘 폴리머 박막 형성법 |
| US7892872B2 (en) * | 2007-01-03 | 2011-02-22 | Nanogram Corporation | Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates |
| US20090203197A1 (en) * | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
| WO2009148878A2 (en) * | 2008-05-29 | 2009-12-10 | Ndsu Research Foundation | Method of forming functionalized silanes |
| EP2135844A1 (de) | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Verfahren zur Herstellung höherer Hydridosilane |
| DE102008043422B3 (de) | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
| JP2010135579A (ja) * | 2008-12-05 | 2010-06-17 | Seiko Epson Corp | ドープシリコン膜の形成方法 |
| JP2010183011A (ja) * | 2009-02-09 | 2010-08-19 | Seiko Epson Corp | ドープシリコン膜の製造方法、ドープシリコン前駆体の製造方法およびデバイスの製造方法 |
| DE102009048087A1 (de) | 2009-10-02 | 2011-04-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilane |
| DE102009053806A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Siliciumschichten |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102009053805A1 (de) * | 2009-11-18 | 2011-05-26 | Evonik Degussa Gmbh | Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen |
| US20120318662A1 (en) * | 2009-12-24 | 2012-12-20 | Nissan Chemical Industries, Ltd. | Method for forming bond between different elements |
| US8624049B2 (en) * | 2010-01-18 | 2014-01-07 | Kovio, Inc. | Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions |
| WO2011094191A1 (en) * | 2010-01-28 | 2011-08-04 | Ndsu Research Foundation | Method of producing cyclohexasilane compounds |
| DE102010002405A1 (de) | 2010-02-26 | 2011-09-01 | Evonik Degussa Gmbh | Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung |
| DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
| DE102010041842A1 (de) | 2010-10-01 | 2012-04-05 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilanverbindungen |
| DE102010049587A1 (de) | 2010-10-26 | 2012-04-26 | Evonik Degussa Gmbh | Verfahren zur elektrochemischen Wasserstoffpassivierung von Halbleiterschichten |
| DE102010062386B4 (de) | 2010-12-03 | 2014-10-09 | Evonik Degussa Gmbh | Verfahren zum Konvertieren von Halbleiterschichten, derartig hergestellte Halbleiterschichten sowie derartige Halbleiterschichten umfassende elektronische und optoelektronische Erzeugnisse |
| DE102010053214A1 (de) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Verfahren zur Wasserstoffpassivierung von Halbleiterschichten |
| DE102010062383A1 (de) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Verfahren zum Konvertieren von Halbleiterschichten |
| DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
| DE102010063823A1 (de) | 2010-12-22 | 2012-06-28 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102011006307A1 (de) | 2011-03-29 | 2012-10-04 | Evonik Degussa Gmbh | Verfahren zum Herstellen von amorphen Halbleiterschichten |
-
2010
- 2010-09-03 DE DE102010040231A patent/DE102010040231A1/de not_active Withdrawn
-
2011
- 2011-08-19 EP EP11757199.2A patent/EP2612348B1/de not_active Not-in-force
- 2011-08-19 US US13/819,376 patent/US9362112B2/en not_active Expired - Fee Related
- 2011-08-19 WO PCT/EP2011/064279 patent/WO2012028476A1/de not_active Ceased
- 2011-08-19 KR KR1020137008442A patent/KR101820554B1/ko not_active Expired - Fee Related
- 2011-08-19 ES ES11757199.2T patent/ES2655491T3/es active Active
- 2011-08-19 EP EP15185644.0A patent/EP2991102A1/de not_active Withdrawn
- 2011-08-19 MY MYPI2013000689A patent/MY158420A/en unknown
- 2011-08-19 JP JP2013526397A patent/JP6099563B2/ja not_active Expired - Fee Related
- 2011-08-19 CN CN201180042652.6A patent/CN103069544B/zh not_active Expired - Fee Related
- 2011-08-31 TW TW100131266A patent/TWI605492B/zh not_active IP Right Cessation
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