Classifications

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  • H01L21/02367—Substrates
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  • H01L21/02381—Silicon, silicon germanium, germanium
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  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
  • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
  • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
  • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
  • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
  • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
  • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
  • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
  • C23C18/1225—Deposition of multilayers of inorganic material
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
  • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
  • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/02521—Materials
  • H01L21/02524—Group 14 semiconducting materials
  • H01L21/02532—Silicon, silicon germanium, germanium
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  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02518—Deposited layers
  • H01L21/0257—Doping during depositing
  • H01L21/02573—Conductivity type
  • H01L21/02579—P-type
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  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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  • H01L21/02365—Forming inorganic semiconducting materials on a substrate
  • H01L21/02612—Formation types
  • H01L21/02617—Deposition types
  • H01L21/02623—Liquid deposition
  • H01L21/02628—Liquid deposition using solutions
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  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
  • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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  • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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  • H10F10/00—Individual photovoltaic cells, e.g. solar cells
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Definitions

• the invention relates to a method for producing p-doped silicon layers, in particular those silicon layers, which are produced from liquid silane-containing formulations.
• the invention further relates to a substrate coated with a p-doped silicon layer.
• the invention relates to the use of certain dopants based on boron compounds for the p-doping of a silicon layer.
• one or more pn junctions or pin or nip junctions can be produced which act as a solar cell.
• the deposition takes place by means of an application device suitable for thin layers, for. B. a roll to roll coaters.
• the resulting layers are stabilized by a suitable temperature treatment so that they typically assume a mixture of microcrystalline, nanocrystalline and amorphous structures.
• all microcrystalline, nanocrystalline and / or amorphous layers should be referred to herein generally as "converted Si layers", since a precise distinction and determination is not well-suited in most cases or of secondary importance for the result obtained is.
• p-doped silicon layers can be produced by various methods.
• CVD techniques have the disadvantage that they must be performed in a high vacuum.
• Processes based on vapor depositions have the further disadvantage that they require i) in the case of a thermal reaction, the use of very high temperatures or ii) in the case of introducing the required energy for the decomposition of the precursor in the form of electromagnetic radiation high energy densities.
• ii in the case of introducing the required energy for the decomposition of the precursor in the form of electromagnetic radiation high energy densities.
• the other methods for producing p-doped silicon layers are disadvantageous
• p-doped silicon layers preferably formed via deposits from the liquid phase.
• liquid starting materials or solutions comprising solid or liquid educts, a dopant, and optionally further additives are applied to the substrate to be coated and subsequently thermally and / or with electromagnetic radiation to a p doped silicon layer converted.
• usable starting materials are hydridosilanes, as well as dopants
• the hydridosilanes consist essentially of silicon and
• Hydrogen atoms and have the advantage that they react when converted to deposited silicon and gaseous hydrogen.
• the deposited silicon can still contain a beneficial for the electronic properties residual hydrogen content.
• the boron compounds consist essentially of boron atoms and hydrocarbon radicals or hydrogen atoms.
• liquid phase processes for the production of p-doped silicon layers from liquid H-silanes by adding main group III element compounds or heteroatomic cyclic silane compounds of the type belong to the state of the art
• No. 5,866,471 A describes inter alia the use of linear or cyclic hydridosilanes and silyl-group-substituted linear or cyclic hydridosilanes which are thermally inert in
• Presence of a dopant in an semiconductor film of the n-type or p-type can be decomposed.
• the substances mentioned are solid at room temperature, soluble in organic solvents and preferably have a degree of polymerization of from 3 to 10,000, preferably from 5 to 30. They are further preferably thermally decomposed between 200 and 700 ° C, wherein the
• Curing times are between 10 minutes and 10 hours.
• EP 1 085 579 A1 describes processes for the production of solar cells in which liquid compositions containing silanes are used and are converted by heat, light and / or laser treatment.
• compositions in a u.a. p-doped Si layer can via a to a
• Drying temperature is specified in a range of 100 to 200 ° C. Again, it is stated that only from 300 ° C, a significant conversion to silicon layers results that between 300 ° C and 550 ° C results in an amorphous layer, and that from 550 ° C polycrystalline layers result.
• EP 1 357 154 A1 describes compositions of "higher silanes" which contain a polysilane which can be prepared by irradiating a photopolymerisable silane with UV radiation
• the "higher silane” compositions can be converted to a silicon film on a substrate by thermal decomposition or photodecomposition.
• Main group III or V element compounds are used before or after the polymerization.
• the wet film is dried by heat (typically 100 to 200 ° C) and then converted by heat and / or light.
• Amorphous films can be produced by thermal treatment at temperatures of less than 550 ° C, at higher temperatures
• EP 1640342 A1 describes compositions of "higher silanes" which contain a polysilane which according to GPC has between 800 and 5000 g / mol average molecular weight
• Composition may also contain an element of the 3rd or 5th main group.
• cyclopentasilane is irradiated with decaboran.
• the film is cured at 400 ° C for 30 minutes and then at 800 ° C for 5 minutes.
• the disadvantage here are long conversion times due to stable clusters and their toxicity. Due to the very stable boron cluster a homogeneous distribution of the boron is difficult.
• J P2002100576 A1 describes the use of a BH 3 sulfide complex as dopant.
• the complex, as well as the hydridosilane are pyrolyzed and deposited on a substrate by a suitable inert organic medium in the vapor phase together.
• deposition temperatures 400 ° C and at least 20 min
• the method should be based on the deposition of liquid silane formulations.
• a liquid-phase process for the production of p-doped silicon layers is to be provided in which the formulations used are stable, the substrate well wetting, and leads to homogeneous p-doped silicon layers with uniformly distributed doping. It would also be particularly advantageous to be able to produce p-doped aSi layers with good conductivities.
• Hydroborating agents in the context of the present invention are boron compounds which have at least one boron-hydrogen bond, with the exception of diborane.
• Diborane is in the context of the present invention of the suitable
• hydroborating agent is liquid or solid.
• group a) and b) are the compounds BH 3 * THF, BH 3 * SMe 2 , BH 3 * NMe 3 or 9-borabicyclononane (9-BBN), 7-borabicycloheptane and / or 11-borabicycloundecane.
• Most particularly preferred hydroboration agents are BH 3 * THF, BH 3 * NMe 3 and 9-borabicyclononane (9-BBN).
• a formulation "containing at least one silicon compound and at least one compound from the group of hydroborating agents" comprises both a composition consisting of at least one silicon compound and at least one compound from the group of hydroborating agents and one selected from at least one silicon compound and at least one compound from the group of hydroborating agent producible composition, in particular a
• Reaction product to understand at least one silicon compound with at least one compound from said group of hydroborating agent.
• the class of dopants previously mentioned under a) and b) has hitherto been used in organic synthetic chemistry, in particular for the hydroboration of alkenes, in order to obtain the corresponding anti-Markovnikov product during the subsequent hydroxylation.
• step d the doped p-layers. This may be because the dopant is released more easily than compounds used in the prior art. Also, the resulting in the delivery of the doping element is stable and readily vaporizable. Another advantage is that non-toxic commercially available substances can be used. Surprisingly, with the new class of
• a silicon halide a silicon organyl
• the compounds mentioned, in particular the silicon-hydrogen compounds of the general formula Si n H 2 n + 2 or Si n H 2n with n 3 to 20, before they are used in step b), partially or completely oligomerized be, with molecular weights of 330 g / mol to 10,000 g / mol, preferably 400 g / mol to 3000 g / mol, more preferably 500 g / mol to 1000 g / mol, can be adjusted.
• the oligomerization can take place, in part or in whole, by irradiation or thermal treatment.
• silicon-hydrogen compounds ie silanes and oligo- or polysilanes, since these are obtainable by chemical syntheses or catalytic annulation of SiH 4 and have a high silicon content relative to the molecular weight of SiH 4
• silanes are especially those of the general
• the oligomeric silicon compound Si nR 2n + 2 or Si n R 2n, each containing n-8 to 100 and R-halogen, can be prepared, for example, by oligomerizing one or more silicon halides.
• the oligomeric silicon compound Si nR 2n + 2 or Si n R 2n may be each with n-8 to 100 and R n Organyl can be prepared by oligomerization of one or more silicon organyls. In all cases, each R mentioned above can be chosen independently.
• higher silanes of the abovementioned formulas with n> 3 are used. In this way, from a liquid low-viscosity mixture in one step, a desired higher-viscosity liquid mixture containing oligo- / polysilanes can be prepared.
• B. UV irradiation, thermal treatment are prepared (co-oligomerization).
• the addition of the compound from the group of hydroborating agents can thus be carried out before or after or else during an optionally carried out oligomerization and / or polymerization of the silicon-containing compound.
• the silicon-containing formulation used in the methods of the invention is typically a liquid formulation. This consists of the aforementioned silicon compounds and optionally in admixture with solvents. Preference is given to using solvents from the group consisting of linear, branched or cyclic saturated, unsaturated or aromatic hydrocarbons having one to 12 carbon atoms (optionally partially or completely halogenated), alcohols, ethers, carboxylic acids, esters, nitriles, amines, amides, sulfoxides and Water.
• solvents from the group consisting of linear, branched or cyclic saturated, unsaturated or aromatic hydrocarbons having one to 12 carbon atoms (optionally partially or completely halogenated), alcohols, ethers, carboxylic acids, esters, nitriles, amines, amides, sulfoxides and Water.
• n-pentane n-hexane, n-heptane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, dicyclopentane, benzene, toluene, m-xylene, p-xylene, mesitylene, indane, indene , Tetrahydronaphthalene, decahydronaphthalene, diethyl ether, dipropyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether,
• Particularly suitable solvents are the hydrocarbons n-pentane, n-hexane, n-heptane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, benzene, toluene, m-xylene, p-xylene, mesitylene, indane and inden.
• additional solvents, further dopants and / or further auxiliaries may additionally be added. In this case, these other agents or substances can independently of each other before the oligomerization of the mixture and / or
• Oligomerization and / or polymerization take place partially or completely by irradiation or thermal treatment, with molar masses of 330 g / mol to 10,000 g / mol, preferably 400 g / mol to 3000 g / mol, particularly preferably 500 g / mol to 1000 g / mol, can be adjusted.
• the proportion of solvent based on the total formulation may be 5 to 99% by weight, preferably 25 to 85% by weight, particularly preferably 50 to 85% by weight.
• the coating of the substrate with the silicon-containing formulation may be known
• the formulation is preferably deposited by a process selected from printing or coating processes (in particular flexographic / gravure printing, inkjet printing, offset printing, digital offset printing and screen printing), spraying processes, spin-coating processes. ), Dip coating and methods selected from Meniscus Coating, Slit Coating, Slot Die Coating, and Curtain Coating.
• printing or coating processes in particular flexographic / gravure printing, inkjet printing, offset printing, digital offset printing and screen printing
• spraying processes spin-coating processes.
• Dip coating and methods selected from Meniscus Coating, Slit Coating, Slot Die Coating, and Curtain Coating.
• the thermal treatment of the coated substrate can be carried out in a known manner, in particular with substantial exclusion of O 2 and H 2 0.
• the coated with the formulation substrate to temperatures of 200 to 1000 ° C, preferably 250 to 700 ° C, on preferably 300 to 650 ° C, heated.
• an at least partially converted and predominantly silicon layer is formed.
• an upstream curing by crosslinking can also be carried out with a UV lamp (eg wavelength 254 nm or wavelength 180 nm).
• the coated substrate is supplied to a thermal treatment without irradiation.
• the temperature can be controlled by the use of ovens, heated rollers, hot plates, infrared or microwave radiation or the like.
• the tempering is particularly preferably carried out because of the resulting low cost with a hot plate or with heated rollers in the roll-to-roll process.
• the temperatures range from 200 ° C to 1000 ° C.
• the layers can also be aftertreated by heating under hydrogenation gas mixtures of hydrogen and nitrogen or of hydrogen and argon (eg H 2 / N 2 in the volume ratio 5/95 to 10/90 or H 2 / Ar im
• Volume ratio 5/95 to 10/90 at temperatures of 250 ° C to 700 ° C, preferably 300 ° C to 650 ° C.
• the conversion of the at least partially oligomerized and predominantly of silicon film is usually carried out within less than 10 minutes, preferably less than 5 minutes.
• Conversion can take place under pressures of 200 mbar up to 50 bar. Preferably, the conversion takes place at pressures of 500 mbar to 10 bar, most preferably between 800 mbar and 1300 mbar.
• the temperatures may be between 250 ° C and 700 ° C, preferably between 300 ° C and 650 ° C for p-doped aSi layers.
• the conversion can take place in one or more consecutive temperature steps.
• the method according to the invention is suitable for producing "at least one" silicon layer arranged on a substrate.
• the method steps (b) to (d) can be performed several times.
• the individual steps can be configured concretely independently of one another, so that the
• Properties of each layer can be set individually for the intended purpose.
• a multiplicity of substrates can be used.
• substrates consisting of glass, quartz glass, graphite, metal, silicon or consisting of a silicon, indium tin oxide, ZnO: F or SnO 2 : F layer located on a heat-compatible support.
• Preferred metals are aluminum, stainless steel, Cr steel, titanium, chromium or molybdenum.
• plastic films z. B. from PEN, PET or polyimides.
• a coated substrate which has already been produced by the process described here can also be used as the substrate.
• the present invention also provides a coated substrate comprising a substrate and a p-doped silicon layer, characterized in that the p-doping is a boron doping, wherein the boron is formed by a compound from the group of
• coated substrates may preferably be as here
• Suitable substrates are all of the abovementioned materials and arrangements, in particular those which are electrically conductive or which have an electrically conductive surface.
• Another object of the present invention is a photovoltaic device, in particular a solar cell or solar cell combinations, which has been prepared using the method of the invention described herein or its variants or can be prepared.
• the present invention also encompasses the use of a compound from the group of hydroborating agents for p-doping a silicon layer. Namely, those silicon films produced by a process comprising the steps
• the indicated layer thicknesses were measured with an Eilipsometer SENpro, Sentech, Berlin.
• the reported electrical measurements were carried out in a glove box with an N 2 atmosphere having an oxygen concentration below 1 ppm and a water content of at most 1 ppm with a Keithley instrument.
• Example 1 Preparation of a Si layer p-doped with a hydroborating agent (BH 3 * THF)
• a hydroborating agent BH 3 * THF
• the thin silane becomes more viscous (formulation 1)
• Formulation 4 consisting of 0.075 mL of Formulation 3, 0.14 mL of cyclooctane, 0.103 mL of toluene, and 0.056 mL of cyclopentasilane are mixed with 9 mg of 9-BBN and placed on a 2.5 cm x 2.5 glass slide cm applied and with the help of a spin coater at 3000 RPM evenly distributed on the glass slide. Subsequently, with the aid of a hot plate, the film is heated at 500 ° C for a period of 1 min. The result is a dark, substantially oxygen-free p-doped silicon layer on the substrate. The layer thickness is 149 nm. Conductivity measurements give a spec. Dark resistance of approx. 7 x 10E + 04 ohmcm.
• Example 3 (comparative): Preparation of a decaborane p-doped Si layer
• the liquid silane becomes thicker (formulation 5).
• the cyclopentasilane oligomerizes to a viscous oligomer.
• 0.2 mL of this thick oligomer is mixed with 0.05 mL of Formulation 5 and 0.5 mL of toluene (Formulation 6).
• Formulation 6 Four drops of Formulation 6 are applied to a 2.5 cm x 2.5 cm glass slide and evenly distributed on the glass slide using a spincoater at 3000 rpm. Subsequently, with the aid of a hot plate, the film is heated at 500 ° C for a period of 1 min. The result is a dark, substantially oxygen-free p-doped silicon layer on the substrate. The layer thickness is 173 nm. Conductivity measurements give a spec. Dark resistance of 2.6 x 10E + 09 ohmcm.

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