EP2556547A1 - Verfahren zum herstellen von amorphen halbleiterschichten - Google Patents
Verfahren zum herstellen von amorphen halbleiterschichtenInfo
- Publication number
- EP2556547A1 EP2556547A1 EP12713900A EP12713900A EP2556547A1 EP 2556547 A1 EP2556547 A1 EP 2556547A1 EP 12713900 A EP12713900 A EP 12713900A EP 12713900 A EP12713900 A EP 12713900A EP 2556547 A1 EP2556547 A1 EP 2556547A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plasma
- volume
- semiconductor
- semiconductor layer
- process gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000034 method Methods 0.000 claims abstract description 75
- 150000001875 compounds Chemical class 0.000 claims abstract description 55
- 239000007789 gas Substances 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 10
- 230000005693 optoelectronics Effects 0.000 claims abstract description 4
- 238000011282 treatment Methods 0.000 claims description 25
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 21
- 229910000077 silane Inorganic materials 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 229910052756 noble gas Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000005496 tempering Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 66
- 239000010408 film Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 239000002904 solvent Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 238000000576 coating method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000004756 silanes Chemical class 0.000 description 5
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 4
- PQNFLJBBNBOBRQ-UHFFFAOYSA-N indane Chemical compound C1=CC=C2CCCC2=C1 PQNFLJBBNBOBRQ-UHFFFAOYSA-N 0.000 description 4
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- -1 cyclic silicon compound Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- LMGZGXSXHCMSAA-UHFFFAOYSA-N cyclodecane Chemical compound C1CCCCCCCCC1 LMGZGXSXHCMSAA-UHFFFAOYSA-N 0.000 description 2
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 2
- 239000004914 cyclooctane Substances 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 description 2
- DOBUHXUCKMAKSP-UHFFFAOYSA-N pentasilolanylsilane Chemical compound [SiH3][SiH]1[SiH2][SiH2][SiH2][SiH2]1 DOBUHXUCKMAKSP-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- CAQYAZNFWDDMIT-UHFFFAOYSA-N 1-ethoxy-2-methoxyethane Chemical compound CCOCCOC CAQYAZNFWDDMIT-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000005654 stationary process Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910006592 α-Sn Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to methods for producing amorphous semiconductor layers on a substrate by applying a semiconductor compound and then
- Converting is carried out by treating the semiconductor layer with a plasma generated from a hydrogen-containing process gas.
- the present invention relates to semiconductor layers produced by the method, electronic and optoelectronic products comprising such semiconductor layers.
- Amorphous semiconductor layers in particular amorphous silicon layers, play a special role in the manufacture of electronic components, either as direct ones
- amorphous silicon layers Compared to crystalline silicon layers, amorphous silicon layers have a higher absorption coefficient, which is why they are particularly interesting, since a better efficiency in terms of the amount of material is obtained.
- the document EP 1 085 579 A1 describes processes for the production of solar cells, in which liquid compositions containing silanes are used and are converted by heat, light and / or laser treatment.
- an intrinsic aSi layer is obtained at 450 ° C in 3% H 2 atmosphere.
- the disadvantage is that the hydrogen is not atomic and thus not reactive.
- US 4,927,786 A describes a process for producing a thin silicon-containing semiconductor film, wherein a film-forming silicon-containing gas is deposited, which deposits on a cooled surface of the substrate as a liquid.
- the liquid is gradually reacted with reactive hydrogen atoms and converted into a silicon-containing solid, which forms a silicon-containing, thin semiconductor.
- Si n H 2 n + 2 compounds with n> 2 are used.
- the reactive H atoms are produced by glowing or microwave discharges in H 2 gas, as well as by UV light irradiation of H 2 gas or reaction with metals.
- the disadvantage of this process is that used material is first brought into the gaseous state and that the substrate must be cooled.
- EP 1 134 224 A2 describes a process for the production of silicon films on the
- Silylcyclopentasilane or spiro [4.4] nonasilane are applied to a substrate surface to form a coating film, and then the coating film is formed by heating in a dehydrogenation reaction into a silicon film
- JP 2004-134440 A1 deals with the irradiation of silane compositions in the context of a silicon layer production.
- the silanes described can each be chain, ring or cage-shaped.
- Irradiation time is between about 0.1 and 30 minutes, wherein the temperature in the irradiation between room temperature and 300 ° C may be.
- a silicon film former is produced, which can be converted into a silicon film by temperatures of 100-1000 ° C., preferably 200-850 ° C., particularly preferably 300-500 ° C.
- polycrystalline silicon layers result when conversion temperatures in excess of 550 ° C are selected. Below 300 ° C, no complete film formation occurs. The conversion can take place under H 2 gas atmosphere.
- EP 1 113 502 A describes the production of a thin-film transistor, which has a
- Silicon layer which is obtained by heat and / or light treatment of a film containing a silicon compound.
- CVD methods generally prove to be disadvantageous because they are very complex in terms of apparatus and lengthy in terms of time.
- semiconductor layers may have so-called dangling bonds in the semiconductor structure.
- the semiconductor characteristics can be degraded.
- the presence of semiconductor layers with open bonds in the case of solar cells can lead to a reduction of the light-induced charge transport.
- H passivation is particularly necessary when the silicon layers are made by thermal processes.
- the present invention is a process for the production of amorphous semiconductor layers.
- a semiconductor layer can be understood in particular to be a layer which comprises at least one elemental semiconductor, preferably selected from the group consisting of Si, Ge, ⁇ -Sn, C, B, Se, Te and mixtures thereof, and / or at least one
- Compound semiconductors in particular selected from the group consisting of IV-IV semiconductors, such as SiGe, SiC, III-V semiconductors, such as GaAs, GaSb, GaP, InAs, InSb, InP, InN, GaN, AlN, AlGaAs, InGaN, oxide semiconductors, such as InSnO, InO, ZnO, II-VI semiconductors, such as ZnS, ZnSe, ZnTe, III-VI semiconductors, such as GaS, GaSe, GaTe, InS, InSe, InTe, II Il-VI semiconductors, such as CulnSe 2 , CulnGaSe 2 , CulnS 2 , CulnGaS 2 , and mixtures thereof, or consists thereof.
- IV-IV semiconductors such as SiGe, SiC, III-V semiconductors, such as GaAs, GaSb, GaP, InAs, InSb, InP, InN, GaN, Al
- the semiconductor layer is a layer comprising silicon.
- a silicon-comprising layer can be understood as meaning both a substantially pure silicon layer and a silicon-containing layer, for example a silicon-based layer, which also contains dopants, or a silicon-containing compound semiconductor layer.
- a silicon-comprising layer can be understood as meaning both a substantially pure silicon layer and a silicon-containing layer, for example a silicon-based layer, which also contains dopants, or a silicon-containing compound semiconductor layer.
- an amorphous silicon layer is produced.
- the production of the amorphous takes place
- amorphous semiconductor layers can be produced directly by treatment with a plasma generated from a hydrogen-containing process gas from semiconductor compounds applied to a substrate.
- a plasma generated from a hydrogen-containing process gas from semiconductor compounds applied to a substrate is particularly, by treatment with a, from a hydrogen-containing
- Silicon layer to be converted said layers have very good electrical properties.
- H-passivation in a second step is required in order to obtain correspondingly suitable layers for electrical applications.
- the plasma conversion reduces the process time compared to conventional conversion.
- the application of the semiconductor compounds is preferably carried out by liquid-phase methods.
- the semiconductor compounds applied by liquid-phase methods can be converted particularly well by plasma chemistry.
- the semiconductor compounds mentioned are
- liquid processable compounds of silicon, germanium and mixed compounds or mixtures thereof as well as liquid processable mixed compounds or mixtures of the elements gallium, arsenic, boron, phosphorus, antimony, zinc, indium, tin, selenium and
- the semiconductor compounds are silicon-containing or
- Germanium or silicon and germanium existing layer can be converted.
- Semiconductor compounds in particular liquid educts (optionally acting as a solvent for other additives and / or dopants) or liquid solutions containing the (even liquid or solid) starting materials (and optionally other additives and / or dopants, the latter in particular in the form of elemental compounds of III and V. main group), which are applied to the substrate to be coated.
- Corresponding processes for the preparation of higher silanes are known to the person skilled in the art. Exemplary are photochemical, anionic, cationic or catalytic polymerization processes.
- a higher silane which has a weight-average molecular weight of 330-10,000 g / mol measured via GPC. More preferably, the weight average molecular weight of the higher silane is 330-5,000 g / mol, more preferably 600-4000 g / mol, measured by GPC.
- the weight average molecular weight of the higher silane is 330-5,000 g / mol, more preferably 600-4000 g / mol, measured by GPC.
- the at least one higher silane if it is itself liquid, can be applied to the substrate without solvent in a solvent. However, it is preferably applied dissolved in a solvent to the substrate.
- solvents from the group consisting of linear, branched or cyclic saturated, unsaturated or aromatic hydrocarbons having one to 12 carbon atoms (optionally partially or completely halogenated), alcohols, ethers, carboxylic acids, esters, nitriles, amines, amides, sulfoxides and Water.
- n-pentane n-hexane, n-heptane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, dicyclopentane, benzene, toluene, m-xylene, p-xylene, mesitylene, indane, indene , Tetrahydronaphthalene, decahydronaphthalene, diethyl ether, dipropyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether,
- Particularly suitable solvents are the hydrocarbons n-pentane, n-hexane, n-hexane, n-octane, n-decane, dodecane, cyclohexane, cyclooctane, cyclodecane, benzene, toluene, m-xylene, p-xylene, mesitylene, indane and inden.
- Weight percent of it preferably at least 5 wt .-% based on the total mass of this composition. If the at least one higher silane is brought to the substrate in a solvent without further solution, its weight percentage, depending on whether it itself serves as a solvent for further additives and / or dopants, is preferably between 70 and 100% by weight, based on the Total mass of the composition.
- the at least one higher silane is thus preferably used in a proportion of 5-100% by weight, based on the total mass of the composition containing it. Particularly thin layers can be achieved if compositions with a proportion of the at least one higher silane of 10-50% by weight are used. To achieve positive layer properties, together with the at least one
- a multiplicity of substrates can be used. Preference is given to substrates consisting of glass, quartz glass, graphite, metal, silicon or consisting of a silicon, indium tin oxide, ZnO: F or SnO 2 : F layer on a heat-compatible support.
- Preferred metals are aluminum, stainless steel, Cr steel, titanium, chromium or molybdenum. Furthermore, plastic films z. B. from PEN, PET or polyimides.
- the application of the semiconductor compound, in particular of the higher silane, preferably takes place via a process selected from printing or coating processes (in particular
- Spray method spin-coating method, dip-coating method and method selected from Meniscus Coating, Slit Coating, Slot Die Coating, and Curtain Coating.
- the semiconductor layer can advantageously be converted simultaneously and the open bonds possibly created during the conversion
- the present inventive method combines the conversion of the deposited semiconductor compound into an amorphous semiconductor layer with the
- Hydrogen passivation By simultaneously converting and hydrogen passivation can Advantageously, the number of process steps is reduced and different process steps are avoided and thus the overall production costs of semiconductor layers are reduced. Hydrogen passivation, for example, for solar cells by increasing light-induced charge transport relative to the time before
- the hydrogen passivation can be checked by IR spectroscopy by changing the bands of the respective semiconductor (for silicon layers: by changing the characteristic band at 2000 cm -1. )
- a small amount of hydrogen is sufficient for passivation, which is advantageous for the
- the process gas comprises> 0 vol.% To ⁇ 100 vol.%, In particular> 0.5 vol.% To ⁇ 20 vol.%, Hydrogen,> 0 vol.% To ⁇ 100 Vol .-%, in particular> 20 Vol .-% to ⁇ 99.5 Vol .-%, nitrogen, and / or> 0 Vol .-% to ⁇ 100 Vol .-%, in particular> 20 Vol .-% to ⁇ 99.5 vol .-%, noble gas / e, in particular argon.
- the process gas thus additionally comprises a noble gas, in particular argon, or a noble gas mixture and / or nitrogen.
- the plasma temperature of a plasma generated from a hydrogen-containing process gas can also be lowered by increasing the process gas pressure or the process gas velocity and vice versa by reducing the process gas pressure or the process gas velocity can be increased.
- the process gas pressure can be varied, for example, within a range of> 0.5 bar to ⁇ 8 bar, for example> 1 bar to ⁇ 5 bar.
- the temperature with which the semiconductor compound film is treated can also be adjusted by further process parameters.
- the treatment temperature can be adjusted by adjusting the distance between the plasma generation location and the semiconductor compound film to be treated, for example, between a plasma nozzle and the compound semiconductor film.
- the treatment temperature decreases with an increase in the distance and increases at a
- the distance between a plasma nozzle and the semiconductor compound film to be treated in a range of 50 ⁇ to 50 mm, preferably 1 mm to 30 mm, particularly preferably 3 mm to 10 mm.
- the treatment temperature can be adjusted by adjusting the treatment time
- Semiconductor compound film is moved to be set. It sinks
- Semiconductor compound film is moved and increases in an extension of the treatment time or a reduction in the treatment speed at which the plasma is moved over the compound semiconductor film. This can be done for example by an X / Y driving device. A particularly good conversion is, especially for the o. G. Distances of the nozzle from the semiconductor compound film to be treated are obtained when the treatment speed, determined as a treated distance of the compound semiconductor film per unit time, is 0.1 to 500 mm / s with a treatment width of 1 to 15 mm. Depending on the semiconductor compound film surface to be treated, temperature control further accelerates the conversion. To increase the treatment speed several plasma nozzles can be connected in series. Furthermore, the plasma nozzle can also be performed several times over the film to be treated.
- the emerging from the nozzle plasma jet is to achieve a particularly good
- Conversion preferably in a Wnkel of 5 to 90 °, preferably 80 to 90 °, particularly preferably 85 to 90 ° (in the latter case: substantially perpendicular to the substrate surface for planar substrates) directed onto the semiconductor compound film located on the substrate.
- nozzles for the arc plasma source are pointed nozzles, fan nozzles or rotating nozzles, preferably pointed nozzles are used, which have the advantage that a higher point energy density is achieved.
- the treatment width of the plasma nozzle to achieve a good conversion is preferably 0.25 to 20 mm, preferably 1 to 5 mm.
- the conversion is carried out at atmospheric pressure.
- the conversion is carried out at atmospheric pressure.
- Plasma source be an atmospheric pressure plasma source. So can advantageously on a costly low pressure or high pressure process can be dispensed with. In addition, compared to low-pressure process or vacuum process, the residence time can be reduced since a higher energy density can be achieved at atmospheric pressure due to the higher molecular density.
- the plasma source may be a high-voltage gas discharge plasma source or an arc plasma source.
- the conversion to an amorphous semiconductor layer is performed by treating the compound semiconductor film with a plasma generated from an indirect plasma source.
- an indirect plasma source can be understood as meaning a plasma source in which the plasma is generated outside the reaction zone with the semiconductor compound film.
- the plasma is therefore outside the
- Plasmas have the advantage that they are potential-free and therefore none
- the conversion is performed by treating the compound semiconductor film with a plasma generated by a plasma source equipped with a plasma nozzle.
- a plasma source equipped with a plasma nozzle.
- Such plasma sources are indirect
- the plasma source may in particular have an inner electrode arranged in the cavity of the plasma nozzle and electrically insulated from the plasma nozzle.
- Inner electrode and the plasma nozzle can in such a plasma source between the Inner electrode and the plasma nozzle plasma are generated by a self-sustaining gas discharge.
- the process gas can be mixed before feeding from different gases, for example hydrogen and optionally noble gas / s, in particular argon, and / or nitrogen.
- the different gases can be mixed in particular in an adjustable ratio to each other.
- the treatment width of the plasma nozzle can be, for example, from> 0.25 mm to ⁇ 20 mm, for example from> 1 mm to ⁇ 5 mm.
- the plasma can in particular by means of an arc or by means of a high-voltage gas discharge, for example, a built-up voltage of> 8 kV to
- the plasma can by a
- High voltage gas discharge plasma source or an arc plasma source can be generated.
- the plasma may be affected by a pulsed voltage
- a square wave voltage, or an AC voltage can be generated.
- the plasma may be controlled by a square wave voltage of> 15 kHz to ⁇ 25 kHz and / or
- the plasma can by a high-pressure gas discharge at currents of ⁇ 45 A, for example> 0, 1 A to ⁇ 44 A, for example, from> 1, 5 A to
- ⁇ 3 A DC can be generated.
- a high-pressure gas discharge in particular a gas discharge at pressures of> 0.5 bar to ⁇ 8 bar, for example of
- Corresponding plasmas can be obtained, for example, under the commercial product name Plasmajet from the company Plasmatreat GmbH, Germany or under the commercial product name Plasmabeam from the company Diener GmbH,
- the plasma is generated in the context of the present invention by a voltage with a frequency of ⁇ 30 kHz, for example from> 15 kHz to ⁇ 25 kHz, for example from ⁇ 20 kHz. Due to the low frequencies of the energy input is advantageously particularly low. The low energy input in turn has the advantage that damage to the surface of the compound semiconductor film can be avoided.
- the substrate coated with the semiconductor compound may be subjected to an additional temperature control before and / or during the conversion into an amorphous semiconductor layer are, wherein the temperature is selected so that no conversion into an amorphous semiconductor layer is carried out by the temperature alone.
- the actual conversion is to be carried out in the context of the present invention by the treatment of the semiconductor compound film with a plasma generated from a hydrogen-containing process gas. Rather, the above-mentioned temperature treatment of a drying of the applied to the substrate
- the temperature control before and / or during the conversion into an amorphous semiconductor layer takes place at a temperature between 50.degree. C. and 350.degree. C., in particular between 100.degree. C. and 300.degree.
- the temperature before conversion can have a different temperature than that during the conversion.
- the temperature during the plasma treatment can improve the quality of the layer to be produced, which alone does not lead to the conversion.
- the temperature can be controlled by the use of ovens, heated rollers, hot plates, infrared or microwave radiation or the like.
- the tempering is particularly preferably carried out because of the resulting low cost with a hot plate or with heated rollers in the roll-to-roll process.
- Another object of the present invention is a semiconductor layer, which is produced by a method according to the invention.
- Photofactor is the quotient of the conductivity under illumination (usually AM 1, 5) and the dark conductivity (conductivity under exclusion of light). For a good photovoltaically active semiconductor layer, a high quotient can be achieved.
- Another object of the present invention is an electronic or
- optoelectronic product for example photovoltaic device, transistor,
- Liquid crystal display in particular solar cell, which is an inventive
- Semiconductor layer comprises.
- Atmospheric pressure plasma is at 1, 8 bar, 8 mm / sec line speed, 4 mm
- the plasma is generated with a power of 800 W at a frequency of 20 kHz.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
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Abstract
Description
Claims
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Application Number | Priority Date | Filing Date | Title |
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DE102011006307A DE102011006307A1 (de) | 2011-03-29 | 2011-03-29 | Verfahren zum Herstellen von amorphen Halbleiterschichten |
PCT/EP2012/054532 WO2012130620A1 (de) | 2011-03-29 | 2012-03-15 | Verfahren zum herstellen von amorphen halbleiterschichten |
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EP12713900A Withdrawn EP2556547A1 (de) | 2011-03-29 | 2012-03-15 | Verfahren zum herstellen von amorphen halbleiterschichten |
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EP (1) | EP2556547A1 (de) |
DE (1) | DE102011006307A1 (de) |
TW (1) | TW201303974A (de) |
WO (1) | WO2012130620A1 (de) |
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DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
DE102010041842A1 (de) | 2010-10-01 | 2012-04-05 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilanverbindungen |
DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
DE102010063823A1 (de) | 2010-12-22 | 2012-06-28 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
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US4927786A (en) * | 1988-05-25 | 1990-05-22 | Canon Kabushiki Kaisha | Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate |
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US5214002A (en) * | 1989-10-25 | 1993-05-25 | Agency Of Industrial Science And Technology | Process for depositing a thermal CVD film of Si or Ge using a hydrogen post-treatment step and an optional hydrogen pre-treatment step |
JP3517934B2 (ja) * | 1994-03-24 | 2004-04-12 | 昭和電工株式会社 | シリコン膜の形成方法 |
JP3408399B2 (ja) * | 1997-05-23 | 2003-05-19 | シャープ株式会社 | シリコン膜の形成方法 |
DE60036449T2 (de) | 1999-03-30 | 2008-06-19 | Seiko Epson Corp. | Verfahren zur hestellung eines dünnschichtfeldeffekttransistors |
TW447143B (en) | 1999-03-30 | 2001-07-21 | Seiko Epson Corp | Method of manufacturing solar cell |
DE19962896A1 (de) * | 1999-10-13 | 2001-05-03 | Univ Konstanz | Verfahren und Vorrichtung zur Herstellung von Solarzellen |
EP1134224B1 (de) | 2000-03-13 | 2007-05-30 | JSR Corporation | Cyclosilan, eine flüssige Zusammensetzung und ein Verfahren zur Bildung eines Silicium-Films |
JP2004134440A (ja) | 2002-10-08 | 2004-04-30 | Okutekku:Kk | シリコン膜の形態学的変化法 |
WO2008124400A1 (en) * | 2007-04-04 | 2008-10-16 | Innovalight, Inc. | Methods for optimizing thin film formation with reactive gases |
JP2010056483A (ja) * | 2008-08-29 | 2010-03-11 | Osaka Univ | 膜製造方法 |
JP2010067803A (ja) * | 2008-09-11 | 2010-03-25 | Seiko Epson Corp | 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法 |
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2012
- 2012-03-15 WO PCT/EP2012/054532 patent/WO2012130620A1/de active Application Filing
- 2012-03-15 EP EP12713900A patent/EP2556547A1/de not_active Withdrawn
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US4927786A (en) * | 1988-05-25 | 1990-05-22 | Canon Kabushiki Kaisha | Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate |
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