TWI605492B - 用於製造摻雜p的矽層之方法及藉由彼所製造之光伏打單元、以及經塗布之基板 - Google Patents

用於製造摻雜p的矽層之方法及藉由彼所製造之光伏打單元、以及經塗布之基板 Download PDF

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TWI605492B
TWI605492B TW100131266A TW100131266A TWI605492B TW I605492 B TWI605492 B TW I605492B TW 100131266 A TW100131266 A TW 100131266A TW 100131266 A TW100131266 A TW 100131266A TW I605492 B TWI605492 B TW I605492B
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group
compound
substrate
layer
doped
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TW100131266A
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TW201232612A (en
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史蒂芬 偉伯
麥瑟斯 帕茲
哈洛德 史都格
傑斯明 藍科爾
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贏創德固賽有限責任公司
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    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
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    • H01L21/02381Silicon, silicon germanium, germanium
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    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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TW100131266A 2010-09-03 2011-08-31 用於製造摻雜p的矽層之方法及藉由彼所製造之光伏打單元、以及經塗布之基板 TWI605492B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010040231A DE102010040231A1 (de) 2010-09-03 2010-09-03 p-Dotierte Siliciumschichten

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Publication Number Publication Date
TW201232612A TW201232612A (en) 2012-08-01
TWI605492B true TWI605492B (zh) 2017-11-11

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US (1) US9362112B2 (enExample)
EP (2) EP2612348B1 (enExample)
JP (1) JP6099563B2 (enExample)
KR (1) KR101820554B1 (enExample)
CN (1) CN103069544B (enExample)
DE (1) DE102010040231A1 (enExample)
ES (1) ES2655491T3 (enExample)
MY (1) MY158420A (enExample)
TW (1) TWI605492B (enExample)
WO (1) WO2012028476A1 (enExample)

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EP2612348A1 (de) 2013-07-10
JP6099563B2 (ja) 2017-03-22
CN103069544A (zh) 2013-04-24
US20130168824A1 (en) 2013-07-04
KR20130103523A (ko) 2013-09-23
KR101820554B1 (ko) 2018-01-19
MY158420A (en) 2016-10-14
EP2991102A1 (de) 2016-03-02
TW201232612A (en) 2012-08-01
JP2013538454A (ja) 2013-10-10
CN103069544B (zh) 2016-06-08
DE102010040231A1 (de) 2012-03-08
ES2655491T3 (es) 2018-02-20
US9362112B2 (en) 2016-06-07
WO2012028476A1 (de) 2012-03-08
EP2612348B1 (de) 2017-11-29

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