TWI605492B - 用於製造摻雜p的矽層之方法及藉由彼所製造之光伏打單元、以及經塗布之基板 - Google Patents
用於製造摻雜p的矽層之方法及藉由彼所製造之光伏打單元、以及經塗布之基板 Download PDFInfo
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- TWI605492B TWI605492B TW100131266A TW100131266A TWI605492B TW I605492 B TWI605492 B TW I605492B TW 100131266 A TW100131266 A TW 100131266A TW 100131266 A TW100131266 A TW 100131266A TW I605492 B TWI605492 B TW I605492B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C—CHEMISTRY; METALLURGY
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1225—Deposition of multilayers of inorganic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
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- Materials Engineering (AREA)
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- Inorganic Chemistry (AREA)
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- Health & Medical Sciences (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
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Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010040231A DE102010040231A1 (de) | 2010-09-03 | 2010-09-03 | p-Dotierte Siliciumschichten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201232612A TW201232612A (en) | 2012-08-01 |
| TWI605492B true TWI605492B (zh) | 2017-11-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100131266A TWI605492B (zh) | 2010-09-03 | 2011-08-31 | 用於製造摻雜p的矽層之方法及藉由彼所製造之光伏打單元、以及經塗布之基板 |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9362112B2 (enExample) |
| EP (2) | EP2612348B1 (enExample) |
| JP (1) | JP6099563B2 (enExample) |
| KR (1) | KR101820554B1 (enExample) |
| CN (1) | CN103069544B (enExample) |
| DE (1) | DE102010040231A1 (enExample) |
| ES (1) | ES2655491T3 (enExample) |
| MY (1) | MY158420A (enExample) |
| TW (1) | TWI605492B (enExample) |
| WO (1) | WO2012028476A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2135844A1 (de) | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Verfahren zur Herstellung höherer Hydridosilane |
| DE102008043422B3 (de) | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
| DE102009048087A1 (de) | 2009-10-02 | 2011-04-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilane |
| DE102009053805A1 (de) | 2009-11-18 | 2011-05-26 | Evonik Degussa Gmbh | Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen |
| DE102009053806A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Siliciumschichten |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102010002405A1 (de) | 2010-02-26 | 2011-09-01 | Evonik Degussa Gmbh | Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung |
| DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
| DE102010041842A1 (de) | 2010-10-01 | 2012-04-05 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilanverbindungen |
| DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
| DE102010063823A1 (de) | 2010-12-22 | 2012-06-28 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102012221669A1 (de) | 2012-11-27 | 2014-05-28 | Evonik Industries Ag | Verfahren zum Herstellen kohlenstoffhaltiger Hydridosilane |
| DE102014208054A1 (de) * | 2014-04-29 | 2015-10-29 | Evonik Degussa Gmbh | Verfahren zur Erzeugung unterschiedlich dotierter Halbleiter |
| DE102014223465A1 (de) * | 2014-11-18 | 2016-05-19 | Evonik Degussa Gmbh | Verfahren zur Erzeugung von dotierten, polykristallinen Halbleiterschichten |
| DE102015225289A1 (de) | 2015-12-15 | 2017-06-22 | Evonik Degussa Gmbh | Dotierte Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
| US11649560B2 (en) | 2019-06-20 | 2023-05-16 | Applied Materials, Inc. | Method for forming silicon-phosphorous materials |
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| US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
| US5399780A (en) * | 1992-11-02 | 1995-03-21 | Tosoh Akzo Corporation | Method of producing triarylborane |
| US5866471A (en) | 1995-12-26 | 1999-02-02 | Kabushiki Kaisha Toshiba | Method of forming semiconductor thin film and method of fabricating solar cell |
| JP2000031066A (ja) * | 1998-07-10 | 2000-01-28 | Sharp Corp | シリコン膜の形成方法及び太陽電池の製造方法 |
| US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
| EP1715509B1 (en) * | 1999-03-30 | 2011-08-24 | JSR Corporation | Method of forming silicon films |
| DE60041569D1 (de) | 1999-03-30 | 2009-04-02 | Seiko Epson Corp | Herstellungsverfahren für eine solarzelle |
| KR20010052441A (ko) * | 1999-03-30 | 2001-06-25 | 마쯔모또 에이찌 | 코팅 조성물 |
| JP4193017B2 (ja) | 2000-09-26 | 2008-12-10 | Jsr株式会社 | ホウ素でドープされたシリコン膜の形成方法 |
| KR100627203B1 (ko) * | 2001-08-14 | 2006-09-22 | 제이에스알 가부시끼가이샤 | 실란 조성물, 실리콘막의 형성법 및 태양 전지의 제조법 |
| JP2003171556A (ja) * | 2001-12-10 | 2003-06-20 | Jsr Corp | シリコン膜の形成方法およびそのための組成物 |
| JP2003313299A (ja) * | 2002-04-22 | 2003-11-06 | Seiko Epson Corp | 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法 |
| EP1640342A4 (en) | 2003-06-13 | 2006-11-22 | Jsr Corp | SILANEPOLYMER AND METHOD FOR FORMING SILICON FILM |
| JP2005223268A (ja) * | 2004-02-09 | 2005-08-18 | Seiko Epson Corp | 薄膜トランジスタの製造方法、ディスプレイの製造方法及びディスプレイ |
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| JP2006156582A (ja) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | 半導体部品および光電変換装置 |
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| KR101467412B1 (ko) * | 2006-10-06 | 2014-12-01 | 코비오 인코포레이티드 | 실리콘 폴리머, 실리콘 화합물 중합법 및 실리콘 폴리머 박막 형성법 |
| US7892872B2 (en) * | 2007-01-03 | 2011-02-22 | Nanogram Corporation | Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates |
| US20090203197A1 (en) * | 2008-02-08 | 2009-08-13 | Hiroji Hanawa | Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition |
| WO2009148878A2 (en) * | 2008-05-29 | 2009-12-10 | Ndsu Research Foundation | Method of forming functionalized silanes |
| EP2135844A1 (de) | 2008-06-17 | 2009-12-23 | Evonik Degussa GmbH | Verfahren zur Herstellung höherer Hydridosilane |
| DE102008043422B3 (de) | 2008-11-03 | 2010-01-07 | Evonik Degussa Gmbh | Verfahren zur Aufreinigung niedermolekularer Hydridosilane |
| JP2010135579A (ja) * | 2008-12-05 | 2010-06-17 | Seiko Epson Corp | ドープシリコン膜の形成方法 |
| JP2010183011A (ja) * | 2009-02-09 | 2010-08-19 | Seiko Epson Corp | ドープシリコン膜の製造方法、ドープシリコン前駆体の製造方法およびデバイスの製造方法 |
| DE102009048087A1 (de) | 2009-10-02 | 2011-04-07 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilane |
| DE102009053806A1 (de) | 2009-11-18 | 2011-05-19 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Siliciumschichten |
| DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102009053805A1 (de) * | 2009-11-18 | 2011-05-26 | Evonik Degussa Gmbh | Siliziumschichten aus polymermodifizierten Flüssigsilan-Formulierungen |
| US20120318662A1 (en) * | 2009-12-24 | 2012-12-20 | Nissan Chemical Industries, Ltd. | Method for forming bond between different elements |
| US8624049B2 (en) * | 2010-01-18 | 2014-01-07 | Kovio, Inc. | Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions |
| WO2011094191A1 (en) * | 2010-01-28 | 2011-08-04 | Ndsu Research Foundation | Method of producing cyclohexasilane compounds |
| DE102010002405A1 (de) | 2010-02-26 | 2011-09-01 | Evonik Degussa Gmbh | Verfahren zur Oligomerisierung von Hydridosilanen, die mit dem Verfahren herstellbaren Oligomerisate und ihre Verwendung |
| DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
| DE102010041842A1 (de) | 2010-10-01 | 2012-04-05 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilanverbindungen |
| DE102010049587A1 (de) | 2010-10-26 | 2012-04-26 | Evonik Degussa Gmbh | Verfahren zur elektrochemischen Wasserstoffpassivierung von Halbleiterschichten |
| DE102010062386B4 (de) | 2010-12-03 | 2014-10-09 | Evonik Degussa Gmbh | Verfahren zum Konvertieren von Halbleiterschichten, derartig hergestellte Halbleiterschichten sowie derartige Halbleiterschichten umfassende elektronische und optoelektronische Erzeugnisse |
| DE102010053214A1 (de) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Verfahren zur Wasserstoffpassivierung von Halbleiterschichten |
| DE102010062383A1 (de) | 2010-12-03 | 2012-06-06 | Evonik Degussa Gmbh | Verfahren zum Konvertieren von Halbleiterschichten |
| DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
| DE102010063823A1 (de) | 2010-12-22 | 2012-06-28 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
| DE102011006307A1 (de) | 2011-03-29 | 2012-10-04 | Evonik Degussa Gmbh | Verfahren zum Herstellen von amorphen Halbleiterschichten |
-
2010
- 2010-09-03 DE DE102010040231A patent/DE102010040231A1/de not_active Withdrawn
-
2011
- 2011-08-19 EP EP11757199.2A patent/EP2612348B1/de not_active Not-in-force
- 2011-08-19 US US13/819,376 patent/US9362112B2/en not_active Expired - Fee Related
- 2011-08-19 WO PCT/EP2011/064279 patent/WO2012028476A1/de not_active Ceased
- 2011-08-19 KR KR1020137008442A patent/KR101820554B1/ko not_active Expired - Fee Related
- 2011-08-19 ES ES11757199.2T patent/ES2655491T3/es active Active
- 2011-08-19 EP EP15185644.0A patent/EP2991102A1/de not_active Withdrawn
- 2011-08-19 MY MYPI2013000689A patent/MY158420A/en unknown
- 2011-08-19 JP JP2013526397A patent/JP6099563B2/ja not_active Expired - Fee Related
- 2011-08-19 CN CN201180042652.6A patent/CN103069544B/zh not_active Expired - Fee Related
- 2011-08-31 TW TW100131266A patent/TWI605492B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2612348A1 (de) | 2013-07-10 |
| JP6099563B2 (ja) | 2017-03-22 |
| CN103069544A (zh) | 2013-04-24 |
| US20130168824A1 (en) | 2013-07-04 |
| KR20130103523A (ko) | 2013-09-23 |
| KR101820554B1 (ko) | 2018-01-19 |
| MY158420A (en) | 2016-10-14 |
| EP2991102A1 (de) | 2016-03-02 |
| TW201232612A (en) | 2012-08-01 |
| JP2013538454A (ja) | 2013-10-10 |
| CN103069544B (zh) | 2016-06-08 |
| DE102010040231A1 (de) | 2012-03-08 |
| ES2655491T3 (es) | 2018-02-20 |
| US9362112B2 (en) | 2016-06-07 |
| WO2012028476A1 (de) | 2012-03-08 |
| EP2612348B1 (de) | 2017-11-29 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |