JP2013511829A - シリコン層の製造方法 - Google Patents
シリコン層の製造方法 Download PDFInfo
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- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Abstract
Description
全ての作業は、O2遮断下でN2グローブボックス中で実施される。
例1−本発明による使用のための材料:
秤量ガラス中のネオペンタシラン3mLにUVランプを、ほぼMw=900g/molの重量平均分子量に達するまで照射する。
秤量ガラス中のシクロペンタシラン3mLにUVランプを、ほぼMw=2200g/molの重量平均分子量に達するまで照射する。
実施例1:
上記の試験された例1で得られたオリゴマー化されたシランのシクロオクタン中の37.5質量%の調製物50μLを、2.5×2.5cm2のサイズのガラス基板上に滴下し、スピンコーターを用いて2000rpmで回転塗布する。得られた皮膜を600℃で20秒間ホットプレート上で硬化させる。約130nmの厚さの褐色のSi層が得られる(図1参照)。PDSデータは、1.2eVで103cm-1のアルファ値を示し、ラマンデータは、100%アモルファスaSi:Hを示す。
上記の試験された例1から得られたオリゴマー化されたシランのシクロオクタン中の37質量%の調製物50μLを、2.5×2.5cm2のサイズのガラス基板上に滴下し、スピンコーターを用いて2000rpmで回転塗布する。得られた皮膜を400℃で10分間ホットプレート上で硬化させる。約140nmの厚さの褐色のSi層が得られる。PDSデータは、1.2eVで120cm-1のアルファ値を示し、ラマンデータは、100%アモルファスaSi:Hを示す。
上記の試験された例2から得られたオリゴマー化されたシランのシクロオクタン中の28.5質量%の調製物50μLを、2.5×2.5cm2のサイズのガラス基板上に滴下し、スピンコーターを用いて6000rpmで回転塗布する。得られた皮膜を400℃で10分間ホットプレート上で硬化させる。約142nmの厚さの褐色のSi層が得られる。PDSデータは、1.2eVで172cm-1のアルファ値を示し、ラマンデータは、100%アモルファスaSi:Hを示す。
秤量ガラス中のシクロペンタシラン3mLにUVランプをほぼMw=3100g/molの重量平均分子量に達するまで照射する。得られたオリゴマー化されたシランのシクロオクタン中の37.5質量%の調製物50μLを、2.5×2.5cm2のサイズのガラス基板上に滴下し、スピンコーターを用いて2500rpmで回転塗布する。得られた皮膜を500℃で60秒間ホットプレート上で硬化させた(図2参照)。
Claims (14)
- 一般式SiaH2a+2(式中、a=3〜10)の少なくとも1種のヒドリドシランから製造される少なくとも1種の高級シランを基板上に塗布し、引き続き熱的に、主にシリコンからなる層に変換する、基板上にシリコン層を熱的に製造する液相法において、前記高級シランの熱的変換を
500〜900℃の温度で、
かつ≦5分の変換時間で行う
ことを特徴とする、基板上にシリコン層を熱的に製造する液相法。 - 前記少なくとも1種の高級シランは、330〜10000g/molの重量平均分子量を有することを特徴とする、請求項1記載の方法。
- 前記少なくとも1種の高級シランを溶剤中に溶解させて、前記基板上に塗布することを特徴とする、請求項1又は2記載の方法。
- 前記少なくとも1種の高級シランを、前記高級シランを含む組成物の全質量に対して5〜100質量%の割合で使用することを特徴とする、請求項1から3までのいずれか1項記載の方法。
- 前記少なくとも1種の高級シランを、第III主族又は第V主族の元素の化合物の群から選択される少なくとも1種のドーパントと一緒に前記基板上に塗布することを特徴とする、請求項1から4までのいずれか1項記載の方法。
- 前記基板は、ガラス、石英ガラス、黒鉛、金属、プラスチック又はシリコンからなるか、又は耐熱性の支持体上に存在するシリコン層、酸化インジウムスズ層、ZnO:F層又はSnO2:F層からなることを特徴とする、請求項1から5までのいずれか1項記載の方法。
- 前記少なくとも1種の高級シランの塗布を、印刷法、吹き付け法、回転塗布法、浸漬法、メニスカスコーティング、スリットコーティング、スロットダイコーティング、及びカーテンコーティングから選択される1つの方法によって行うことを特徴とする、請求項1から6までのいずれか1項記載の方法。
- 前記熱的変換を500℃〜650℃の温度で行うことを特徴とする、請求項1から7までのいずれか1項記載の方法。
- 前記変換時間は、0.1ms〜120s、特に有利に0.1〜60sであることを特徴とする、請求項1から8までのいずれか1項記載の方法。
- 前記熱的変換を唯一の熱的プロセス工程内で行うことを特徴とする、請求項1から9までのいずれか1項記載の方法。
- 前記熱処理の前、その間又はその後に、UV線を照射することを特徴とする、請求項1から10までのいずれか1項記載の方法。
- 前記高級シランの塗布後で、かつ前記高級シランの変換前に減圧を印加することを特徴とする、請求項1から11までのいずれか1項記載の方法。
- 請求項1から12までのいずれか1項記載の方法により製造される、シリコン層。
- 電子的又は光電子的デバイス層を製造するための、請求項1から12までのいずれか1項記載の方法により製造される少なくとも1つのシリコン層の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102009053806.2 | 2009-11-18 | ||
DE102009053806A DE102009053806A1 (de) | 2009-11-18 | 2009-11-18 | Verfahren zur Herstellung von Siliciumschichten |
PCT/EP2010/067207 WO2011061106A2 (de) | 2009-11-18 | 2010-11-10 | Verfahren zur herstellung von siliciumschichten |
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JP2013511829A true JP2013511829A (ja) | 2013-04-04 |
JP6012469B2 JP6012469B2 (ja) | 2016-10-25 |
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JP2012539271A Expired - Fee Related JP6012469B2 (ja) | 2009-11-18 | 2010-11-10 | シリコン層の製造方法 |
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Country | Link |
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US (1) | US9234281B2 (ja) |
EP (1) | EP2501841B1 (ja) |
JP (1) | JP6012469B2 (ja) |
KR (1) | KR101735140B1 (ja) |
CN (1) | CN102597318B (ja) |
DE (1) | DE102009053806A1 (ja) |
ES (1) | ES2651678T3 (ja) |
MY (1) | MY161427A (ja) |
TW (1) | TWI525213B (ja) |
WO (1) | WO2011061106A2 (ja) |
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DE102010040231A1 (de) | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
DE102010041842A1 (de) * | 2010-10-01 | 2012-04-05 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Hydridosilanverbindungen |
DE102010062984A1 (de) | 2010-12-14 | 2012-06-14 | Evonik Degussa Gmbh | Verfahren zur Herstellung höherer Halogen- und Hydridosilane |
DE102010063823A1 (de) | 2010-12-22 | 2012-06-28 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
DE102012221669A1 (de) | 2012-11-27 | 2014-05-28 | Evonik Industries Ag | Verfahren zum Herstellen kohlenstoffhaltiger Hydridosilane |
DE102013020518A1 (de) | 2013-12-11 | 2015-06-11 | Forschungszentrum Jülich GmbH Fachbereich Patente | Verfahren und Vorrichtung zur Polymerisation einer Zusammensetzung enthaltend Hydridosilane und anschließenden Verwendung der Polymerisate zur Herstellung von siliziumhaltigen Schichten |
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DE102009053804B3 (de) | 2009-11-18 | 2011-03-17 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hydridosilanen |
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2009
- 2009-11-18 DE DE102009053806A patent/DE102009053806A1/de not_active Withdrawn
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Also Published As
Publication number | Publication date |
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CN102597318A (zh) | 2012-07-18 |
WO2011061106A3 (de) | 2011-08-25 |
DE102009053806A1 (de) | 2011-05-19 |
EP2501841B1 (de) | 2017-10-25 |
CN102597318B (zh) | 2015-08-26 |
TW201137169A (en) | 2011-11-01 |
WO2011061106A2 (de) | 2011-05-26 |
US20120273805A1 (en) | 2012-11-01 |
MY161427A (en) | 2017-04-14 |
KR101735140B1 (ko) | 2017-05-24 |
JP6012469B2 (ja) | 2016-10-25 |
TWI525213B (zh) | 2016-03-11 |
AU2010321034A1 (en) | 2012-05-10 |
US9234281B2 (en) | 2016-01-12 |
ES2651678T3 (es) | 2018-01-29 |
EP2501841A2 (de) | 2012-09-26 |
KR20120109485A (ko) | 2012-10-08 |
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