ATE518972T1 - Silanzusammensetzung, verfahren zum herstellen eines siliziumfilms und einer solarzelle - Google Patents
Silanzusammensetzung, verfahren zum herstellen eines siliziumfilms und einer solarzelleInfo
- Publication number
- ATE518972T1 ATE518972T1 AT02018077T AT02018077T ATE518972T1 AT E518972 T1 ATE518972 T1 AT E518972T1 AT 02018077 T AT02018077 T AT 02018077T AT 02018077 T AT02018077 T AT 02018077T AT E518972 T1 ATE518972 T1 AT E518972T1
- Authority
- AT
- Austria
- Prior art keywords
- solar cell
- silane composition
- producing
- silicon film
- integer
- Prior art date
Links
- 229910000077 silane Inorganic materials 0.000 title abstract 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 125000005843 halogen group Chemical group 0.000 abstract 1
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 abstract 1
- CVLHDNLPWKYNNR-UHFFFAOYSA-N pentasilolane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2]1 CVLHDNLPWKYNNR-UHFFFAOYSA-N 0.000 abstract 1
- DOBUHXUCKMAKSP-UHFFFAOYSA-N pentasilolanylsilane Chemical compound [SiH3][SiH]1[SiH2][SiH2][SiH2][SiH2]1 DOBUHXUCKMAKSP-UHFFFAOYSA-N 0.000 abstract 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 229920000548 poly(silane) polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- -1 silane compound Chemical class 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1212—Zeolites, glasses
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001245947A JP2003055556A (ja) | 2001-08-14 | 2001-08-14 | シリコン膜またはシリコン酸化膜の形成方法およびそのための組成物 |
JP2001319304A JP4419357B2 (ja) | 2001-10-17 | 2001-10-17 | シラン組成物及びそれを用いた太陽電池の製造方法 |
JP2001375992A JP2003171556A (ja) | 2001-12-10 | 2001-12-10 | シリコン膜の形成方法およびそのための組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE518972T1 true ATE518972T1 (de) | 2011-08-15 |
Family
ID=27347329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02018077T ATE518972T1 (de) | 2001-08-14 | 2002-08-13 | Silanzusammensetzung, verfahren zum herstellen eines siliziumfilms und einer solarzelle |
Country Status (6)
Country | Link |
---|---|
US (2) | US7067069B2 (de) |
EP (1) | EP1284306B1 (de) |
KR (2) | KR100627203B1 (de) |
CN (1) | CN100392008C (de) |
AT (1) | ATE518972T1 (de) |
TW (1) | TW555690B (de) |
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JP3517934B2 (ja) | 1994-03-24 | 2004-04-12 | 昭和電工株式会社 | シリコン膜の形成方法 |
JP3462976B2 (ja) | 1997-07-31 | 2003-11-05 | シャープ株式会社 | シリコン粒子の製造方法及びシリコン膜の形成方法 |
JPH11260721A (ja) * | 1998-03-13 | 1999-09-24 | Toshiba Corp | 多結晶薄膜シリコン層の形成方法および太陽光発電素子 |
JP2000031066A (ja) * | 1998-07-10 | 2000-01-28 | Sharp Corp | シリコン膜の形成方法及び太陽電池の製造方法 |
EP1087433A4 (de) | 1999-03-30 | 2001-08-16 | Jsr Corp | Verfahren zum herstellen von siliziumoxidfilmen |
TW447143B (en) * | 1999-03-30 | 2001-07-21 | Seiko Epson Corp | Method of manufacturing solar cell |
TW465131B (en) * | 1999-03-30 | 2001-11-21 | Seiko Epson Corp | Method for forming silicon film |
KR20010052441A (ko) * | 1999-03-30 | 2001-06-25 | 마쯔모또 에이찌 | 코팅 조성물 |
EP1113502B1 (de) * | 1999-03-30 | 2007-09-19 | Seiko Epson Corporation | Verfahren zur hestellung eines dünnschichtfeldeffekttransistors |
TW486824B (en) * | 1999-03-30 | 2002-05-11 | Seiko Epson Corp | Method of manufacturing thin-film transistor |
DE60001764T2 (de) * | 1999-05-21 | 2003-11-13 | Jsr Corp | Beschichtungsmittel und damit beschichtete Folien sowie Glas |
KR100562815B1 (ko) * | 2000-03-13 | 2006-03-23 | 제이에스알 가부시끼가이샤 | 실리콘막 형성용 용액 조성물 및 실리콘막의 형성 방법 |
JP3745959B2 (ja) * | 2000-12-28 | 2006-02-15 | セイコーエプソン株式会社 | シリコン薄膜パターンの形成方法 |
WO2004019393A1 (ja) * | 2002-08-23 | 2004-03-04 | Jsr Corporation | シリコン膜形成用組成物およびシリコン膜の形成方法 |
JP2004186320A (ja) * | 2002-12-02 | 2004-07-02 | Jsr Corp | シリコン膜形成用組成物および太陽電池 |
-
2002
- 2002-08-13 US US10/216,790 patent/US7067069B2/en not_active Expired - Fee Related
- 2002-08-13 TW TW091118186A patent/TW555690B/zh not_active IP Right Cessation
- 2002-08-13 KR KR1020020047677A patent/KR100627203B1/ko not_active IP Right Cessation
- 2002-08-13 EP EP02018077A patent/EP1284306B1/de not_active Expired - Lifetime
- 2002-08-13 AT AT02018077T patent/ATE518972T1/de not_active IP Right Cessation
- 2002-08-14 CN CNB021297975A patent/CN100392008C/zh not_active Expired - Fee Related
-
2006
- 2006-04-17 US US11/404,921 patent/US7173180B2/en not_active Expired - Fee Related
- 2006-07-24 KR KR1020060068949A patent/KR100676341B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW555690B (en) | 2003-10-01 |
EP1284306A2 (de) | 2003-02-19 |
KR100676341B1 (ko) | 2007-02-02 |
US7067069B2 (en) | 2006-06-27 |
US20030045632A1 (en) | 2003-03-06 |
CN1407018A (zh) | 2003-04-02 |
KR20030015146A (ko) | 2003-02-20 |
KR100627203B1 (ko) | 2006-09-22 |
EP1284306B1 (de) | 2011-08-03 |
KR20060090643A (ko) | 2006-08-14 |
US20060185712A1 (en) | 2006-08-24 |
CN100392008C (zh) | 2008-06-04 |
US7173180B2 (en) | 2007-02-06 |
EP1284306A3 (de) | 2004-05-19 |
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