JP2013520844A5 - - Google Patents
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- Publication number
- JP2013520844A5 JP2013520844A5 JP2012555086A JP2012555086A JP2013520844A5 JP 2013520844 A5 JP2013520844 A5 JP 2013520844A5 JP 2012555086 A JP2012555086 A JP 2012555086A JP 2012555086 A JP2012555086 A JP 2012555086A JP 2013520844 A5 JP2013520844 A5 JP 2013520844A5
- Authority
- JP
- Japan
- Prior art keywords
- material layer
- electrically insulating
- insulating material
- conductive material
- electrically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011810 insulating material Substances 0.000 claims 8
- 239000004020 conductor Substances 0.000 claims 7
- 239000000463 material Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Claims (1)
- トランジスタを製造する方法であって:
導電材料層と電気絶縁材料層とを順に含んだ基板を準備する工程と、
前記電気絶縁材料層上にレジスト材料層を堆積する工程と、
前記レジスト材料層をパターニングして、前記電気絶縁材料層の一部を露出させる工程と、
露出された前記電気絶縁材料層を除去して、前記導電材料層の一部を露出させる工程と、
前記電気絶縁材料層が前記導電材料層からオーバーハングするように、露出された前記導電材料層を除去し、それにより、前記導電材料層及び前記基板の少なくとも一方を、後に適用される指向性堆積プロセスから遮蔽するのに十分な凹部形状を作り出す工程と、
前記基板と露出された前記電気絶縁材料層及び前記導電材料層とを第2の電気絶縁材料層で共形に被覆する工程と、
前記第2の電気絶縁材料層を半導体材料層で共形に被覆する工程と、
前記半導体材料層上に導電材料層を指向性堆積する工程と、
を有する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/713,252 US7923313B1 (en) | 2010-02-26 | 2010-02-26 | Method of making transistor including reentrant profile |
US12/713,252 | 2010-02-26 | ||
PCT/US2011/025795 WO2011106337A1 (en) | 2010-02-26 | 2011-02-23 | Methods of making transistor including reentrant profile |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013520844A JP2013520844A (ja) | 2013-06-06 |
JP2013520844A5 true JP2013520844A5 (ja) | 2014-02-06 |
Family
ID=43837090
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012555086A Pending JP2013520844A (ja) | 2010-02-26 | 2011-02-23 | 内側にへこんだ形状を含んだトランジスタを製造する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7923313B1 (ja) |
EP (1) | EP2539925A1 (ja) |
JP (1) | JP2013520844A (ja) |
KR (1) | KR20120116510A (ja) |
CN (1) | CN102770948A (ja) |
BR (1) | BR112012019898A2 (ja) |
WO (1) | WO2011106337A1 (ja) |
Families Citing this family (20)
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US7573420B2 (en) * | 2007-05-14 | 2009-08-11 | Infineon Technologies Ag | RF front-end for a radar system |
US8409937B2 (en) * | 2011-01-07 | 2013-04-02 | Eastman Kodak Company | Producing transistor including multi-layer reentrant profile |
US8383469B2 (en) * | 2011-01-07 | 2013-02-26 | Eastman Kodak Company | Producing transistor including reduced channel length |
WO2012094357A2 (en) * | 2011-01-07 | 2012-07-12 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
US8847232B2 (en) * | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including reduced channel length |
US8492769B2 (en) * | 2011-01-07 | 2013-07-23 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
CN102760690B (zh) | 2011-04-29 | 2014-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法和晶片 |
US8592909B2 (en) | 2011-08-26 | 2013-11-26 | Eastman Kodak Company | Transistor including single layer reentrant profile |
US8637355B2 (en) | 2011-08-26 | 2014-01-28 | Eastman Kodak Company | Actuating transistor including single layer reentrant profile |
US8617942B2 (en) | 2011-08-26 | 2013-12-31 | Eastman Kodak Company | Producing transistor including single layer reentrant profile |
US8865576B2 (en) | 2011-09-29 | 2014-10-21 | Eastman Kodak Company | Producing vertical transistor having reduced parasitic capacitance |
US8803227B2 (en) | 2011-09-29 | 2014-08-12 | Eastman Kodak Company | Vertical transistor having reduced parasitic capacitance |
US8698230B2 (en) | 2012-02-22 | 2014-04-15 | Eastman Kodak Company | Circuit including vertical transistors with a conductive stack having reentrant profile |
US8633068B2 (en) | 2012-02-22 | 2014-01-21 | Eastman Kodak Company | Vertical transistor actuation |
US20140374762A1 (en) * | 2013-06-19 | 2014-12-25 | Lee W. Tutt | Circuit including four terminal transistor |
US20140374806A1 (en) * | 2013-06-19 | 2014-12-25 | Lee W. Tutt | Four terminal transistor |
TWI583036B (zh) * | 2013-09-30 | 2017-05-11 | 樂金顯示科技股份有限公司 | 積層體及其製造方法 |
CN106068567B (zh) * | 2014-03-06 | 2019-07-16 | 伊斯曼柯达公司 | 具有聚合物芯的vtft |
US20150257283A1 (en) * | 2014-03-06 | 2015-09-10 | Carolyn Rae Ellinger | Forming vertically spaced electrodes |
TW202200701A (zh) | 2020-05-07 | 2022-01-01 | 美商可持續能源聯盟有限責任公司 | 鬆散狀隔熱性粉末的交聯 |
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JP3983222B2 (ja) | 2004-01-13 | 2007-09-26 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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US7410856B2 (en) | 2006-09-14 | 2008-08-12 | Micron Technology, Inc. | Methods of forming vertical transistors |
JP2008103636A (ja) | 2006-10-20 | 2008-05-01 | Sumitomo Electric Ind Ltd | 縦型トランジスタ、および縦型トランジスタを作製する方法 |
JP2008160004A (ja) | 2006-12-26 | 2008-07-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
US11136667B2 (en) | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
US7789961B2 (en) | 2007-01-08 | 2010-09-07 | Eastman Kodak Company | Delivery device comprising gas diffuser for thin film deposition |
JP2008277375A (ja) * | 2007-04-26 | 2008-11-13 | Sanyo Electric Co Ltd | 電界効果トランジスタ及びその製造方法 |
US20090001470A1 (en) | 2007-06-26 | 2009-01-01 | Anderson Brent A | Method for forming acute-angle spacer for non-orthogonal finfet and the resulting structure |
KR100889607B1 (ko) | 2007-08-13 | 2009-03-20 | 성균관대학교산학협력단 | 더미 드레인층을 이용한 수직 실린더형 트랜지스터의제조방법 및 이에 의해 제조된 수직 실린더형 트랜지스터 |
KR100896631B1 (ko) | 2007-08-13 | 2009-05-08 | 성균관대학교산학협력단 | 수직 실린더형 트랜지스터의 제조방법 및 이에 의해 제조된수직 실린더형 트랜지스터 |
KR100960928B1 (ko) | 2008-01-02 | 2010-06-07 | 주식회사 하이닉스반도체 | 수직형 트랜지스터 및 그의 형성방법 |
JP2010040580A (ja) * | 2008-07-31 | 2010-02-18 | Sanyo Electric Co Ltd | 有機薄膜デバイスの製造方法及び有機薄膜デバイス |
-
2010
- 2010-02-26 US US12/713,252 patent/US7923313B1/en not_active Expired - Fee Related
-
2011
- 2011-02-23 BR BR112012019898A patent/BR112012019898A2/pt not_active IP Right Cessation
- 2011-02-23 WO PCT/US2011/025795 patent/WO2011106337A1/en active Application Filing
- 2011-02-23 CN CN2011800109899A patent/CN102770948A/zh active Pending
- 2011-02-23 KR KR1020127025076A patent/KR20120116510A/ko not_active Application Discontinuation
- 2011-02-23 EP EP11706444A patent/EP2539925A1/en not_active Withdrawn
- 2011-02-23 JP JP2012555086A patent/JP2013520844A/ja active Pending
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