JP3983222B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP3983222B2 JP3983222B2 JP2004005034A JP2004005034A JP3983222B2 JP 3983222 B2 JP3983222 B2 JP 3983222B2 JP 2004005034 A JP2004005034 A JP 2004005034A JP 2004005034 A JP2004005034 A JP 2004005034A JP 3983222 B2 JP3983222 B2 JP 3983222B2
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- vertical mosfet
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title description 21
- 239000010410 layer Substances 0.000 claims description 106
- 239000000758 substrate Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
102 ドリフト層
103 トレンチ
104 ゲート絶縁膜
105 埋め込みゲート電極
106 ベース層
107 ソース層
108 ゲート絶縁膜
109 ゲート電極
110 層間絶縁膜
111 ソース電極
112 ドレイン電極
120 シリコン酸化膜
121 ポリシリコン
201 過電流検出回路
202〜204 ゲートバイアスコントロール回路
Claims (2)
- 一導電型の半導体基板に設けられたドリフト層と、前記半導体基板の表面から前記ドリフト層に達する深さまで設けられたトレンチにゲート絶縁膜を介して埋め込まれた埋め込みゲート電極と、前記ドリフト層の前記埋め込みゲート電極に沿う領域に形成された反対導電型のベース層と、前記ベース層の表面に選択的に形成された一導電型のソース層と、前記半導体基板の表面上において前記ドリフト層、ベース層、ソース層にわたる領域にゲート絶縁膜を介して形成された表面ゲート電極と、前記ソース層及び前記ベース層に接続されるソース電極と、前記半導体基板の裏面において前記ドリフト層に接続されるドレイン電極とを備え、前記埋め込みゲート電極、ドリフト層、ベース層、ソース層で半導体基板の深さ方向のチャネルを有する第1の縦型MOSFETが構成され、前記表面ゲート電極、ドリフト層、ベース層、ソース層で半導体基板の平面方向のチャネルを有する第2の縦型MOSFETが構成され、前記第1の縦型MOSFETと第2の縦型MOSFETのしきい値が異なることを特徴とする半導体装置。
- 一導電型のドリフト層を備える半導体基板の所要領域にトレンチを形成する工程と、前記半導体基板の表面及び前記トレンチの内面にゲート絶縁膜を形成する工程と、前記半導体基板の表面上ないし前記トレンチの内部に導電材料を形成し、かつこの導電材料を選択エッチングして表面ゲート電極及び埋め込みゲート電極を形成する工程と、前記表面ゲート電極及び埋め込みゲート電極を用いた自己整合法により前記半導体基板に反対導電型の不純物を導入してベース層を形成する工程と、続いて前記半導体基板に一導電型の不純物を導入してソース層を形成する工程と、前記半導体基板の表面に層間絶縁膜を形成する工程と、前記層間絶縁膜を通して前記ソース層に前記ベース層に達する深さのコンタクトホールを形成する工程と、前記コンタクトホール内に導電材料を埋設してソース電極を形成する工程と、前記半導体基板の裏面に導電材料のドレイン電極を形成する工程とを含み、前記埋め込みゲート電極、ドリフト層、ベース層、ソース層で半導体基板の深さ方向のチャネルを有する第1の縦型MOSFETを形成し、前記表面ゲート電極、ドリフト層、ベース層、ソース層で半導体基板の平面方向のチャネルを有して前記第1の縦型MOSFETとはしきい値が異なる第2の縦型MOSFETを形成することを特徴とする半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004005034A JP3983222B2 (ja) | 2004-01-13 | 2004-01-13 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004005034A JP3983222B2 (ja) | 2004-01-13 | 2004-01-13 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005203395A JP2005203395A (ja) | 2005-07-28 |
JP3983222B2 true JP3983222B2 (ja) | 2007-09-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004005034A Expired - Lifetime JP3983222B2 (ja) | 2004-01-13 | 2004-01-13 | 半導体装置及びその製造方法 |
Country Status (1)
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JP (1) | JP3983222B2 (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100777593B1 (ko) * | 2006-12-27 | 2007-11-16 | 동부일렉트로닉스 주식회사 | 트랜치 게이트 모스 소자 및 그 제조 방법 |
US7923313B1 (en) | 2010-02-26 | 2011-04-12 | Eastman Kodak Company | Method of making transistor including reentrant profile |
US8803203B2 (en) | 2010-02-26 | 2014-08-12 | Eastman Kodak Company | Transistor including reentrant profile |
US7985684B1 (en) | 2011-01-07 | 2011-07-26 | Eastman Kodak Company | Actuating transistor including reduced channel length |
US8847232B2 (en) | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including reduced channel length |
US8304347B2 (en) | 2011-01-07 | 2012-11-06 | Eastman Kodak Company | Actuating transistor including multiple reentrant profiles |
US8338291B2 (en) | 2011-01-07 | 2012-12-25 | Eastman Kodak Company | Producing transistor including multiple reentrant profiles |
US8847226B2 (en) | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including multiple reentrant profiles |
US8383469B2 (en) | 2011-01-07 | 2013-02-26 | Eastman Kodak Company | Producing transistor including reduced channel length |
US8409937B2 (en) | 2011-01-07 | 2013-04-02 | Eastman Kodak Company | Producing transistor including multi-layer reentrant profile |
US8492769B2 (en) | 2011-01-07 | 2013-07-23 | Eastman Kodak Company | Transistor including multi-layer reentrant profile |
CN103443926B (zh) * | 2011-02-12 | 2019-09-13 | 恩智浦美国有限公司 | 半导体器件及相关制造方法 |
US8592909B2 (en) | 2011-08-26 | 2013-11-26 | Eastman Kodak Company | Transistor including single layer reentrant profile |
US8637355B2 (en) | 2011-08-26 | 2014-01-28 | Eastman Kodak Company | Actuating transistor including single layer reentrant profile |
US8617942B2 (en) | 2011-08-26 | 2013-12-31 | Eastman Kodak Company | Producing transistor including single layer reentrant profile |
US8803227B2 (en) | 2011-09-29 | 2014-08-12 | Eastman Kodak Company | Vertical transistor having reduced parasitic capacitance |
US8865576B2 (en) | 2011-09-29 | 2014-10-21 | Eastman Kodak Company | Producing vertical transistor having reduced parasitic capacitance |
JP2013258333A (ja) * | 2012-06-13 | 2013-12-26 | Toshiba Corp | 電力用半導体装置 |
ITTO20120742A1 (it) | 2012-08-24 | 2014-02-25 | St Microelectronics Srl | Dispositivo a semiconduttore con modalita' operative lineare e a commutazione migliorate, metodo di fabbricazione del dispositivo a semiconduttore, e metodo di polarizzazione del dispositivo a semiconduttore |
KR101920717B1 (ko) * | 2013-01-14 | 2018-11-21 | 삼성전자주식회사 | 이중 병렬 채널 구조를 갖는 반도체 소자 및 상기 반도체 소자의 제조 방법 |
JP2016082335A (ja) * | 2014-10-14 | 2016-05-16 | トヨタ自動車株式会社 | 半導体装置 |
JP6973422B2 (ja) * | 2019-01-21 | 2021-11-24 | 株式会社デンソー | 半導体装置の製造方法 |
CN111952180A (zh) * | 2020-08-14 | 2020-11-17 | 江苏东海半导体科技有限公司 | 一种具有平衡电流密度umos及其制作方法 |
-
2004
- 2004-01-13 JP JP2004005034A patent/JP3983222B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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JP2005203395A (ja) | 2005-07-28 |
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