JP2013519218A - 一時的にボンディングされた製品ウェハの処理方法 - Google Patents
一時的にボンディングされた製品ウェハの処理方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000012545 processing Methods 0.000 title claims abstract description 11
- 235000012431 wafers Nutrition 0.000 title claims description 107
- 238000004381 surface treatment Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 21
- 230000001070 adhesive effect Effects 0.000 claims description 21
- 229920001169 thermoplastic Polymers 0.000 claims description 6
- 239000004416 thermosoftening plastic Substances 0.000 claims description 6
- 238000012876 topography Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000035882 stress Effects 0.000 description 22
- 239000000047 product Substances 0.000 description 17
- 230000007547 defect Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 241001050985 Disco Species 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
‐製品ウェハの担持体ウェハに背向する平坦な面を、<150μm、特に<100μm、好ましくは<75μm、さらに好ましくは<50μm、特に好ましくは<30μmの製品ウェハの厚みDにまで研削する及び/又は背面薄化するステップと、
‐研削及び/又は背面薄化の後、製品ウェハの特に構造的な固有応力を減少させるための手段によって、前記平坦な面の表面処理を行うステップと、
による、担持体ウェハ上に一時的にボンディングされた製品ウェハの処理方法に関する。
Description
‐ 研磨プロセス:例えばDiscoからの「乾式研磨プロセス」
‐ 好適な化学物質によって行われる湿式エッチングプロセス
‐ 乾式エッチングプロセス
‐ 上述のプロセスの組み合わせ
である。
‐ 担持体ウェハが構造ウェハに接着剤材料を介して一時的にボンディングされる
‐ 構造ウェハの後処理は背面薄化後に行われる
‐ 構造ウェハの後処理は、洗浄と化学的機械的研磨(CMP)との組み合わせであり、CMPにおいて脆性破壊によって生じる表面粗さ、クラック、及び組み込まれた固有応力が、軽減されるか又は完全に除去される
‐ そうして得られた滑らかな表面によって、高温において、最終的に前述の表面欠陥 (窪み)のための始点として使用される構造欠陥は少なくなる
‐ CMPの故に、構造ウェハにおける固有応力は、グラインディングによって薄化された構造ウェハにおける固有応力よりも劇的に少ない
‐ より少ない固有応力によって、非常に薄い構造ウェハの、その下にある接着層中への局所的な弾性座屈及び/又は塑性変形が、特に高温において、防止される
‐ これら表面欠陥(窪み)なしに、構造ウェハの品質は極度に改善される
‐ 0.5μm、1μm、3μm、5μm、及び10μmの制御因子
Claims (14)
- ‐製品ウェハの担持体ウェハに背向する平坦な面を、<150μm、特に<100μm、好ましくは<75μm、さらに好ましくは<50μm、特に好ましくは<30μm、の製品ウェハの厚みDにまで研削する及び/又は背面薄化するステップと、
‐研削及び/又は背面薄化の後、製品ウェハの特に構造的な固有応力を減少させるための手段によって、前記平坦な面の表面処理を行うステップと、
による、担持体ウェハ上に一時的にボンディングされた製品ウェハの処理方法。 - 前記表面処理のステップは、背面薄化のプロセスとは別の、特に空間的に分離した独立したプロセスにおいて行われることを特徴とする請求項1に記載の方法。
- 前記固有応力を減少させるための手段は、
‐平坦な面の乾式研磨
‐平坦な面の湿式エッチング
‐平坦な面の乾式エッチング
の特徴のうちの少なくとも1つによって特徴づけられる請求項1又は2に記載の方法。 - 前記製品ウェハの前記固有応力は、該固有応力を減少させるための手段によって調整することができることを特徴とする請求項1〜3のいずれか一項に記載の方法。
- 前記担持体ウェハは、特に前記担持体ウェハの所定の温度において及び/又はある温度範囲に亘って、前記製品ウェハの膨張係数と略同一の膨張係数を有することを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 前記製品ウェハは、前記平坦な面に向かい合うその接触面において、少なくとも部分的に、特に大部分が、熱可塑性接着剤を使用して前記担持体ウェハに一時的に接続されていることを特徴とする請求項1〜5のいずれか一項に記載の方法。
- 前記固有応力を減少させるための手段は、特に研削及び/又は背面薄化によって損傷を受けた前記平坦な面の結晶構造の規定層厚みSを少なくとも部分的に除去するように形成されていることを特徴とする請求項1〜6のいずれか一項に記載の方法。
- 前記製品ウェハの前記固有応力は、該固有応力を減少させるための手段によって、前記製品ウェハが後続の熱プロセス中に、前記担持体ウェハに向かって湾曲するように調整されることを特徴とする請求項1〜7のいずれか一項に記載の方法。
- 前記接触面の前記製品ウェハは、特に前記接着剤の中に埋め込まれたトポグラフィーを有することを特徴とする請求項6に記載の方法。
- 前記表面処理のステップの後に、熱プロセスのステップが、特に>50℃、好ましくは>75℃、より好ましくは>100℃で行われることを特徴とする請求項1〜9のいずれか一項に記載の方法。
- 前記熱プロセスのステップは、特に化学的気相堆積法のステップであることを特徴とする請求項1〜10のいずれか一項に記載の方法。
- 前記層厚みSは、<10μm、特に<5μm、好ましくは<3μm、さらに好ましくは、<1μm、特に好ましくは、<0.5μmであることを特徴とする請求項7に記載の方法。
- ‐製品ウェハの研削及び/又は背面薄化のための手段、及び
‐前記製品ウェハの特に構造的固有応力を減少させるための手段
の特徴を有する、担持体ウェハ上に一時的にボンディングされた前記製品ウェハの処理のための装置。 - 請求項1〜11のいずれか一項に記載された方法を実行するための装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010007127A DE102010007127A1 (de) | 2010-02-05 | 2010-02-05 | Verfahren zur Behandlung eines temporär gebondeten Produktwafers |
DE102010007127.7 | 2010-02-05 | ||
PCT/EP2010/007098 WO2011095189A1 (de) | 2010-02-05 | 2010-11-23 | Verfahren zur behandlung eines temporär gebondeten produktwafers |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2013519218A true JP2013519218A (ja) | 2013-05-23 |
Family
ID=44169003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012551501A Pending JP2013519218A (ja) | 2010-02-05 | 2010-11-23 | 一時的にボンディングされた製品ウェハの処理方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9362154B2 (ja) |
EP (1) | EP2532024A1 (ja) |
JP (1) | JP2013519218A (ja) |
KR (1) | KR101822669B1 (ja) |
CN (1) | CN102725838B (ja) |
DE (1) | DE102010007127A1 (ja) |
SG (1) | SG182703A1 (ja) |
TW (1) | TWI525677B (ja) |
WO (1) | WO2011095189A1 (ja) |
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JP2004530302A (ja) * | 2001-05-03 | 2004-09-30 | インフィネオン テヒノロギーズ アーゲー | ウエハ裏面の研磨方法 |
JP2005136167A (ja) * | 2003-10-30 | 2005-05-26 | Sumitomo Electric Ind Ltd | 窒化物半導体基板の製造方法と窒化物半導体基板 |
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-
2010
- 2010-02-05 DE DE102010007127A patent/DE102010007127A1/de not_active Ceased
- 2010-11-23 WO PCT/EP2010/007098 patent/WO2011095189A1/de active Application Filing
- 2010-11-23 EP EP10787688A patent/EP2532024A1/de not_active Ceased
- 2010-11-23 JP JP2012551501A patent/JP2013519218A/ja active Pending
- 2010-11-23 KR KR1020127017583A patent/KR101822669B1/ko active IP Right Grant
- 2010-11-23 CN CN201080063106.6A patent/CN102725838B/zh active Active
- 2010-11-23 US US13/575,316 patent/US9362154B2/en active Active
- 2010-11-23 SG SG2012054839A patent/SG182703A1/en unknown
-
2011
- 2011-02-01 TW TW100104032A patent/TWI525677B/zh active
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JP2004530302A (ja) * | 2001-05-03 | 2004-09-30 | インフィネオン テヒノロギーズ アーゲー | ウエハ裏面の研磨方法 |
WO2003083002A1 (fr) * | 2002-03-28 | 2003-10-09 | Mitsui Chemicals, Inc. | Film adhesive sensible a la pression pour la protection de la surface d'une plaquette a semi-conducteur et procede visant a proteger cette plaquette avec le film adhesif |
JP2004079889A (ja) * | 2002-08-21 | 2004-03-11 | Disco Abrasive Syst Ltd | 半導体ウェーハの製造方法 |
JP2005136167A (ja) * | 2003-10-30 | 2005-05-26 | Sumitomo Electric Ind Ltd | 窒化物半導体基板の製造方法と窒化物半導体基板 |
JP2007512706A (ja) * | 2003-11-19 | 2007-05-17 | アドバンスド マテリアル サイエンシーズ、インク | 大量生産時における裏面研削処理からの薄型半導体ウェハの保護 |
WO2006090650A1 (ja) * | 2005-02-23 | 2006-08-31 | Jsr Corporation | ウェハ加工方法 |
JP2007242655A (ja) * | 2006-03-06 | 2007-09-20 | Shin Etsu Polymer Co Ltd | 固定キャリア |
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TWI525677B (zh) | 2016-03-11 |
SG182703A1 (en) | 2012-08-30 |
KR20120120198A (ko) | 2012-11-01 |
KR101822669B1 (ko) | 2018-03-08 |
CN102725838A (zh) | 2012-10-10 |
US20120292288A1 (en) | 2012-11-22 |
DE102010007127A1 (de) | 2011-08-11 |
US9362154B2 (en) | 2016-06-07 |
CN102725838B (zh) | 2016-03-02 |
TW201145373A (en) | 2011-12-16 |
EP2532024A1 (de) | 2012-12-12 |
WO2011095189A1 (de) | 2011-08-11 |
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