JP2013510397A - 光電子デバイス用多層金属電極 - Google Patents

光電子デバイス用多層金属電極 Download PDF

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JP2013510397A
JP2013510397A JP2012537367A JP2012537367A JP2013510397A JP 2013510397 A JP2013510397 A JP 2013510397A JP 2012537367 A JP2012537367 A JP 2012537367A JP 2012537367 A JP2012537367 A JP 2012537367A JP 2013510397 A JP2013510397 A JP 2013510397A
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electrode
film
oxide
metal film
electrode according
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JP2013510397A5 (enExample
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ヴァレリオ プルネリ
ドリチ サンダー ゴシュ
トン ライ チェン
Original Assignee
フンダシオ インスティチュート デ サイエンセズ フォトニクス
インスティトゥシオ カタラナ デ レセルカ イ エストゥディス アヴァンカッツ
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Publication of JP2013510397A publication Critical patent/JP2013510397A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
    • H01J2211/20—Constructional details
    • H01J2211/22—Electrodes
    • H01J2211/225—Material of electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Non-Insulated Conductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2012537367A 2009-11-03 2010-11-02 光電子デバイス用多層金属電極 Withdrawn JP2013510397A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09382238A EP2317562A1 (en) 2009-11-03 2009-11-03 Multilayer metallic electrodes for optoelectronics
EP09382238.5 2009-11-03
PCT/EP2010/066625 WO2011054814A1 (en) 2009-11-03 2010-11-02 Multilayer metallic electrodes for optoelectronics

Publications (2)

Publication Number Publication Date
JP2013510397A true JP2013510397A (ja) 2013-03-21
JP2013510397A5 JP2013510397A5 (enExample) 2013-12-19

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US (1) US20120260983A1 (enExample)
EP (1) EP2317562A1 (enExample)
JP (1) JP2013510397A (enExample)
KR (1) KR20120098739A (enExample)
WO (1) WO2011054814A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014038920A (ja) * 2012-08-14 2014-02-27 Toshiba Corp 半導体発光素子
JP2017079462A (ja) * 2015-08-03 2017-04-27 フンダシオ インスティチュート デ サイエンセズ フォトニクス 非局所的読出し回路を有する画像センサおよびこの画像センサを備える光電子デバイス
JP2018060787A (ja) * 2016-09-30 2018-04-12 エルジー ディスプレイ カンパニー リミテッド 電極及びこれを含む有機発光素子、液晶表示装置及び有機発光表示装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013064713A (ja) * 2011-08-30 2013-04-11 Canon Inc Ｘ線導波路及びｘ線導波システム
EP2581789B1 (en) 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
US9296183B2 (en) 2011-11-30 2016-03-29 Corning Incorporated Metal dewetting methods and articles produced thereby
CN103515397A (zh) * 2012-06-18 2014-01-15 联咏科技股份有限公司 具有像素级自动光衰减器的图像传感装置
KR20140034545A (ko) * 2012-09-12 2014-03-20 삼성전기주식회사 터치패널
WO2014140297A1 (en) * 2013-03-14 2014-09-18 Fundació Institut De Ciències Fotòniques Transparent electrode and substrate for optoelectronic or plasmonic applications comprising silver
CN103578782A (zh) * 2013-11-08 2014-02-12 蚌埠玻璃工业设计研究院 一种提高染料敏化电池纳晶TiO2电极光吸收效率的方法
US20160002096A1 (en) 2014-07-02 2016-01-07 Corning Incorporated Silicon and silica nanostructures and method of making silicon and silica nanostructures
US20160139699A1 (en) * 2014-11-16 2016-05-19 Microsoft Technology Licensing, Llc Light sensitive digitizer system
CN105810842B (zh) * 2014-12-29 2019-01-11 昆山国显光电有限公司 有机发光二极管的阳极结构
US10097281B1 (en) 2015-11-18 2018-10-09 Hypres, Inc. System and method for cryogenic optoelectronic data link
CN107768483B (zh) * 2017-10-30 2019-10-11 河南科技大学 一种全打印氧化锌紫外探测器的制备方法
JP7052487B2 (ja) * 2018-03-29 2022-04-12 住友大阪セメント株式会社 光素子
CN112578601A (zh) * 2019-09-27 2021-03-30 北京载诚科技有限公司 一种透明电极及装置
CN112582483A (zh) * 2019-09-30 2021-03-30 康宁股份有限公司 具有强化的近红外性质的透明导体材料及其形成方法
CN111682114A (zh) * 2020-06-16 2020-09-18 电子科技大学 一种有机光电探测器底电极及其制备方法和应用
KR102841528B1 (ko) * 2020-08-03 2025-08-04 더 리젠츠 오브 더 유니버시티 오브 미시건 초박형 투명 전도체를 사용한 유기 발광 다이오드에서의 도파관 모드의 제거
CN112086532B (zh) * 2020-10-15 2021-10-22 湖北大学 SnO2基同质结自驱动紫外光光电探测器及其制备方法
CN112259278B (zh) * 2020-10-19 2022-05-03 西安工程大学 一种颗粒复合纤维增强铜氧化锡触头材料的制备方法
CN112768617A (zh) * 2021-01-06 2021-05-07 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN114242981B (zh) * 2021-12-17 2024-04-09 太原理工大学 一种TiO2-SnO2复合材料及其制备方法和应用
CN114823930B (zh) * 2022-03-24 2023-04-11 电子科技大学 基于MgO钝化的非晶Ga2O3日盲紫外探测器及其制备方法
EP4333082A1 (en) * 2022-09-01 2024-03-06 Gold Stone (Fujian) Energy Company Limited Heterojunction solar cell and manufacturing method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
US5486857A (en) * 1989-08-15 1996-01-23 Minnesota Mining And Manufacturing Company Thermal imaging system
DE4427215A1 (de) * 1993-08-02 1995-02-23 Agency Ind Science Techn Transparente und leitfähige ultradünne Filme und Verfahren zu ihrer Herstellung
DE19520843A1 (de) * 1995-06-08 1996-12-12 Leybold Ag Scheibe aus durchscheinendem Werkstoff sowie Verfahren zu ihrer Herstellung
US6208400B1 (en) * 1996-03-15 2001-03-27 Canon Kabushiki Kaisha Electrode plate having metal electrodes of aluminum or nickel and copper or silver disposed thereon
DE19958878B4 (de) * 1999-12-07 2012-01-19 Saint-Gobain Glass Deutschland Gmbh Dünnschicht-Solarzelle
EP1375703A1 (en) * 2001-03-16 2004-01-02 Nippon Sheet Glass Co., Ltd. Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate
US6919133B2 (en) * 2002-03-01 2005-07-19 Cardinal Cg Company Thin film coating having transparent base layer
DE10308515B4 (de) * 2003-02-26 2007-01-25 Schott Ag Verfahren zur Herstellung organischer lichtemittierender Dioden und organische lichtemittierende Diode
ES2365904T3 (es) * 2004-01-13 2011-10-13 Sanyo Electric Co., Ltd. Dispositivo fotovoltaico.
CN101438199A (zh) * 2004-10-25 2009-05-20 加利福尼亚大学董事会 有机电子器件的叠层电极
ITRM20060181A1 (it) * 2006-03-31 2007-10-01 Pilkington Italia Spa Lastra di vetro rivestita
EP2090139A2 (fr) * 2006-11-17 2009-08-19 Saint-Gobain Glass France Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014038920A (ja) * 2012-08-14 2014-02-27 Toshiba Corp 半導体発光素子
JP2017079462A (ja) * 2015-08-03 2017-04-27 フンダシオ インスティチュート デ サイエンセズ フォトニクス 非局所的読出し回路を有する画像センサおよびこの画像センサを備える光電子デバイス
JP2018060787A (ja) * 2016-09-30 2018-04-12 エルジー ディスプレイ カンパニー リミテッド 電極及びこれを含む有機発光素子、液晶表示装置及び有機発光表示装置
US10847742B2 (en) 2016-09-30 2020-11-24 Lg Display Co., Ltd. Electrode, organic light emitting diode, liquid crystal display device, and organic light emitting display device of the same

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Publication number Publication date
EP2317562A1 (en) 2011-05-04
WO2011054814A1 (en) 2011-05-12
KR20120098739A (ko) 2012-09-05
EP2317562A8 (en) 2011-08-10
US20120260983A1 (en) 2012-10-18

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