KR20120098739A - 광전자소자를 위한 다층 금속성 전극 - Google Patents

광전자소자를 위한 다층 금속성 전극 Download PDF

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Publication number
KR20120098739A
KR20120098739A KR1020127013249A KR20127013249A KR20120098739A KR 20120098739 A KR20120098739 A KR 20120098739A KR 1020127013249 A KR1020127013249 A KR 1020127013249A KR 20127013249 A KR20127013249 A KR 20127013249A KR 20120098739 A KR20120098739 A KR 20120098739A
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South Korea
Prior art keywords
film
oxide
electrode
metal film
electrically conductive
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Ceased
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KR1020127013249A
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English (en)
Korean (ko)
Inventor
발레리오 프루네리
트리티 선다르 고쉬
통 라이 첸
Original Assignee
인스티튜시오 카탈라나 드 르세르카 아이 에스투디스 아반카츠(아이크레아)
인스티튜트 드 시엔시스 포토닉스, 펀다시오 프리바다
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Publication of KR20120098739A publication Critical patent/KR20120098739A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/061—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements characterised by a multilayer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2211/00—Plasma display panels with alternate current induction of the discharge, e.g. AC-PDPs
    • H01J2211/20—Constructional details
    • H01J2211/22—Electrodes
    • H01J2211/225—Material of electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Non-Insulated Conductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
KR1020127013249A 2009-11-03 2010-11-02 광전자소자를 위한 다층 금속성 전극 Ceased KR20120098739A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09382238A EP2317562A1 (en) 2009-11-03 2009-11-03 Multilayer metallic electrodes for optoelectronics
EP09382238.5 2009-11-03

Publications (1)

Publication Number Publication Date
KR20120098739A true KR20120098739A (ko) 2012-09-05

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KR1020127013249A Ceased KR20120098739A (ko) 2009-11-03 2010-11-02 광전자소자를 위한 다층 금속성 전극

Country Status (5)

Country Link
US (1) US20120260983A1 (enExample)
EP (1) EP2317562A1 (enExample)
JP (1) JP2013510397A (enExample)
KR (1) KR20120098739A (enExample)
WO (1) WO2011054814A1 (enExample)

Cited By (1)

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KR20230044299A (ko) * 2020-08-03 2023-04-03 더 리젠츠 오브 더 유니버시티 오브 미시건 초박형 투명 전도체를 사용한 유기 발광 다이오드에서의 도파관 모드의 제거

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JP2013064713A (ja) * 2011-08-30 2013-04-11 Canon Inc Ｘ線導波路及びｘ線導波システム
EP2581789B1 (en) 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optically transparent and electrically conductive coatings and method for their deposition on a substrate
US9296183B2 (en) 2011-11-30 2016-03-29 Corning Incorporated Metal dewetting methods and articles produced thereby
CN103515397A (zh) * 2012-06-18 2014-01-15 联咏科技股份有限公司 具有像素级自动光衰减器的图像传感装置
JP5792694B2 (ja) * 2012-08-14 2015-10-14 株式会社東芝 半導体発光素子
KR20140034545A (ko) * 2012-09-12 2014-03-20 삼성전기주식회사 터치패널
WO2014140297A1 (en) * 2013-03-14 2014-09-18 Fundació Institut De Ciències Fotòniques Transparent electrode and substrate for optoelectronic or plasmonic applications comprising silver
CN103578782A (zh) * 2013-11-08 2014-02-12 蚌埠玻璃工业设计研究院 一种提高染料敏化电池纳晶TiO2电极光吸收效率的方法
US20160002096A1 (en) 2014-07-02 2016-01-07 Corning Incorporated Silicon and silica nanostructures and method of making silicon and silica nanostructures
US20160139699A1 (en) * 2014-11-16 2016-05-19 Microsoft Technology Licensing, Llc Light sensitive digitizer system
CN105810842B (zh) * 2014-12-29 2019-01-11 昆山国显光电有限公司 有机发光二极管的阳极结构
EP3128742B1 (en) * 2015-08-03 2018-05-16 Fundació Institut de Ciències Fotòniques Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor
US10097281B1 (en) 2015-11-18 2018-10-09 Hypres, Inc. System and method for cryogenic optoelectronic data link
KR102601451B1 (ko) * 2016-09-30 2023-11-13 엘지디스플레이 주식회사 전극 및 이를 포함하는 유기발광소자, 액정표시장치 및 유기발광표시장치
CN107768483B (zh) * 2017-10-30 2019-10-11 河南科技大学 一种全打印氧化锌紫外探测器的制备方法
JP7052487B2 (ja) * 2018-03-29 2022-04-12 住友大阪セメント株式会社 光素子
CN112578601A (zh) * 2019-09-27 2021-03-30 北京载诚科技有限公司 一种透明电极及装置
CN112582483A (zh) * 2019-09-30 2021-03-30 康宁股份有限公司 具有强化的近红外性质的透明导体材料及其形成方法
CN111682114A (zh) * 2020-06-16 2020-09-18 电子科技大学 一种有机光电探测器底电极及其制备方法和应用
CN112086532B (zh) * 2020-10-15 2021-10-22 湖北大学 SnO2基同质结自驱动紫外光光电探测器及其制备方法
CN112259278B (zh) * 2020-10-19 2022-05-03 西安工程大学 一种颗粒复合纤维增强铜氧化锡触头材料的制备方法
CN112768617A (zh) * 2021-01-06 2021-05-07 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN114242981B (zh) * 2021-12-17 2024-04-09 太原理工大学 一种TiO2-SnO2复合材料及其制备方法和应用
CN114823930B (zh) * 2022-03-24 2023-04-11 电子科技大学 基于MgO钝化的非晶Ga2O3日盲紫外探测器及其制备方法
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KR20230044299A (ko) * 2020-08-03 2023-04-03 더 리젠츠 오브 더 유니버시티 오브 미시건 초박형 투명 전도체를 사용한 유기 발광 다이오드에서의 도파관 모드의 제거
US12431257B2 (en) 2020-08-03 2025-09-30 The Regents Of The University Of Michigan Elimination of waveguide modes in organic light-emitting diodes using an ultrathin transparent conductor

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Publication number Publication date
EP2317562A1 (en) 2011-05-04
JP2013510397A (ja) 2013-03-21
WO2011054814A1 (en) 2011-05-12
EP2317562A8 (en) 2011-08-10
US20120260983A1 (en) 2012-10-18

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