JP2013507008A - 切欠構造のなかで長尺状ルテニウム膜上に多段階式銅鍍金を行う方法。 - Google Patents
切欠構造のなかで長尺状ルテニウム膜上に多段階式銅鍍金を行う方法。 Download PDFInfo
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- JP2013507008A JP2013507008A JP2012532310A JP2012532310A JP2013507008A JP 2013507008 A JP2013507008 A JP 2013507008A JP 2012532310 A JP2012532310 A JP 2012532310A JP 2012532310 A JP2012532310 A JP 2012532310A JP 2013507008 A JP2013507008 A JP 2013507008A
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- Prior art keywords
- copper
- notch structure
- depth
- metal layer
- width
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 323
- 239000010949 copper Substances 0.000 title claims abstract description 323
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 322
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 238000007747 plating Methods 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims description 133
- 229910052707 ruthenium Inorganic materials 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 207
- 239000002184 metal Substances 0.000 claims abstract description 207
- 238000011049 filling Methods 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 189
- 239000002243 precursor Substances 0.000 claims description 128
- 239000000758 substrate Substances 0.000 claims description 95
- 230000008569 process Effects 0.000 claims description 74
- 238000000137 annealing Methods 0.000 claims description 72
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 45
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 45
- 238000000151 deposition Methods 0.000 claims description 40
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 38
- 230000001590 oxidative effect Effects 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 27
- 239000010936 titanium Substances 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 24
- 239000010937 tungsten Substances 0.000 claims description 24
- 238000009792 diffusion process Methods 0.000 claims description 23
- 229910052715 tantalum Inorganic materials 0.000 claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 23
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 238000007740 vapor deposition Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- -1 tungsten nitride Chemical class 0.000 claims description 8
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 7
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 7
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 7
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 6
- 229910001431 copper ion Inorganic materials 0.000 claims description 6
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 6
- 238000000605 extraction Methods 0.000 claims description 5
- 238000007654 immersion Methods 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 235000015847 Hesperis matronalis Nutrition 0.000 claims description 2
- 240000004533 Hesperis matronalis Species 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000012804 iterative process Methods 0.000 claims description 2
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 152
- 239000010410 layer Substances 0.000 description 125
- 238000012545 processing Methods 0.000 description 57
- 230000008016 vaporization Effects 0.000 description 26
- 238000009826 distribution Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 239000001257 hydrogen Substances 0.000 description 21
- 229910052739 hydrogen Inorganic materials 0.000 description 21
- 238000009834 vaporization Methods 0.000 description 21
- 239000006200 vaporizer Substances 0.000 description 14
- 239000012528 membrane Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000015654 memory Effects 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000003917 TEM image Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005281 excited state Effects 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 229910052743 krypton Inorganic materials 0.000 description 5
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 5
- 229910052754 neon Inorganic materials 0.000 description 5
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 5
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052756 noble gas Inorganic materials 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000004438 eyesight Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000002835 noble gases Chemical class 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910006501 ZrSiO Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- GWSOSPTYOIRWNO-UHFFFAOYSA-N 2-(dimethylamino)ethanolate;ethanolate;tantalum(5+) Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CN(C)CC[O-] GWSOSPTYOIRWNO-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- IYZDEOSFLDNSDK-UHFFFAOYSA-N CN(C)[Ta](N(C)C)N(C)C Chemical compound CN(C)[Ta](N(C)C)N(C)C IYZDEOSFLDNSDK-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 241001424392 Lucia limbaria Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000000274 adsorptive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- PPJPTAQKIFHZQU-UHFFFAOYSA-N bis(tert-butylimino)tungsten;dimethylazanide Chemical compound C[N-]C.C[N-]C.CC(C)(C)N=[W]=NC(C)(C)C PPJPTAQKIFHZQU-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- MTHYQSRWPDMAQO-UHFFFAOYSA-N diethylazanide;tantalum(5+) Chemical compound CCN(CC)[Ta](N(CC)CC)(N(CC)CC)(N(CC)CC)N(CC)CC MTHYQSRWPDMAQO-UHFFFAOYSA-N 0.000 description 1
- VJDVOZLYDLHLSM-UHFFFAOYSA-N diethylazanide;titanium(4+) Chemical compound [Ti+4].CC[N-]CC.CC[N-]CC.CC[N-]CC.CC[N-]CC VJDVOZLYDLHLSM-UHFFFAOYSA-N 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005383 fluoride glass Substances 0.000 description 1
- VMDTXBZDEOAFQF-UHFFFAOYSA-N formaldehyde;ruthenium Chemical compound [Ru].O=C VMDTXBZDEOAFQF-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000013169 thromboelastometry Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/1601—Process or apparatus
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- C23C18/1646—Characteristics of the product obtained
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract
Description
Claims (30)
- 基板の表面上の構造を充填する方法において、
前記表面上に形成され、幅、深さ及び体積をもつ少なくとも1つの切欠構造を有する前記基板を供給する供給工程、
Ru3(CO)12前駆体を含むプロセスガスを用いた熱化学蒸着法により、長尺のルテニウム金属膜を少なくとも1つの切欠構造内に蒸着させる蒸着工程、
前記ルテニウム金属膜を銅鍍金槽と接触させることで、前記ルテニウム金属膜上に長尺の銅金属層を蒸着させ、前記ルテニウム金属膜と前記銅金属層がともに前記少なくとも1つの切欠構造の幅、深さ及び体積の100%未満を充填させる接触工程、
前記銅鍍金槽から前記基板を取出す取出し工程、
前記長尺の銅金属層を非酸化性ガスの中でアニーリングを行うことで、アニーリング済銅金属層を形成するアニーリング工程、及び
前記接触工程、前記取出し工程、及び、前記アニーリング工程を反復することにより、前記少なくとも1つの切欠構造内にアニーリング済付加銅金属を形成し、少なくとも一部の銅金属が少なくとも1つの切欠構造内を充たし、前記アニーリング済銅金属層と前記アニーリング済付加銅金属より前記ルテニウム金属膜上に形成された銅金属粒を包み込む反復工程を備えることを特徴とする方法。 - 前記蒸着工程は、Ru3(CO)12前駆体及び一酸化炭素キャリアガスを含むプロセスガスを用いた熱化学蒸着法により、実質的に酸素及び炭素を含まないルテニウム金属膜を蒸着することを備えることを特徴とする請求項1に記載の方法。
- 前記基板の前記表面は露出した拡散隔層を備えることを特徴とする請求項1に記載の方法。
- 前記拡散隔層がタンタル、窒化タンタル、炭化タンタル、炭窒化タンタル、チタン、窒化チタン、炭化チタン、炭窒化チタン、タングステン、 窒化タングステン、炭化タングステン、炭窒化タングステン、もしくはこれらの組合せを含むことを特徴とする請求項1に記載の方法。
- 前記ルテニウム金属膜の厚みが約1nm以上約20nm以下であることを特徴とする請求項1に記載の方法。
- 前記銅金属層のアニーリング工程において、前記銅金属層を約100℃以上約500℃以下のアラゴンガス、窒素ガス、水素ガス、もしくはこれらの組合せに露出することを特徴とする請求項1に記載の方法。
- 前記少なくとも1つの切欠構造は部分的に製造された回路基板上にビア、トレンチ、もしくはビアとトレンチの両方を備えることを特徴とする請求項1に記載の方法。
- 前記接触工程が電気化学的銅鍍金処理または非電気的銅鍍金処理を備えることを特徴とする請求項1に記載の方法。
- 前記基板の温度が約100℃から約500℃のときに、不活性ガス、水素ガス、もしくは両者の組合せを含む非酸化性ガス内で前記ルテニウム金属膜をアニーリングする第2アニーリング工程を備えることを特徴とする請求項1に記載の方法。
- 基板の表面上の構造を充填する方法において、
基板の表面上に形成され、幅、深さ及び体積をもつ少なくとも1つの切欠構造を有する基板を供給する供給工程、
Ru3(CO)12前駆体と一酸化炭素キャリアガスとを含むプロセスガスを用いた熱化学蒸着法により、実質的に酸素及び炭素を含まない長尺のルテニウム金属膜を前記少なくとも1つの切欠構造内で蒸着させる蒸着工程、
前記ルテニウム金属膜を第1銅鍍金槽と接触させることで、前記ルテニウム金属膜上に長尺の銅金属層を蒸着させ、前記ルテニウム金属膜と前記銅金属層がともに前記少なくとも1つの切欠構造の幅、深さ及び体積の100%未満である第1幅、第1深さ及び第1体積で前記少なくとも1つの切欠構造を充填する第1接触工程、
前記第1銅鍍金槽から前記基板を取出す第1取出し工程、
前記銅金属層を非酸化性ガスの中でアニーリングを行うことで、アニーリング済銅金属層を形成する第1アニーリング工程、
前記アニーリング済銅金属層を前記第1銅鍍金槽とは異なった化学物質を含む第2銅鍍金槽と接触させることで、前記少なくとも1つの切欠構造を少なくとも部分的に充填する付加銅金属層を蒸着させ、前記付加銅金属層がさらに前記少なくとも1つの切欠構造の幅、深さ及び体積の100%以下である第1幅、第1深さ及び第1体積よりも大きな第2幅、第2深さ、第2体積で、前記少なくとも1つの切欠構造を充填する第2接触工程、
前記第2銅鍍金槽から前記基板を取出す第2取出し工程、及び
前記付加銅金属層を非酸化条件下においてアニーリングを行うことで、前記アニーリング済銅金属層と前記付加銅金属層から前記ルテニウム金属膜上に銅金属粒を形成する第2アニーリング工程を備えることを特徴とする方法。 - 前記第2幅、第2深さ及び第2体積が前記少なくとも1つの切欠構造の幅、深さ及び体積の100%未満であり、かつ、前記第2接触工程と前記第2取出し工程と前記第2アニーリング工程とを必要な回数繰り返すことで、前記少なくとも1つの切欠構造の幅、深さ及び体積の約90%から100%である第3幅、第3深さ及び第3体積で前記少なくとも1つの切欠構造をさらに充填することを特徴とする請求項10に記載の方法。
- 前記第2幅、第2深さ、第2体積が前記少なくとも1つの切欠構造の幅、深さ、体積の約50%未満であることを特徴とする請求項10に記載の方法。
- 前記第2幅、第2深さ、第2体積が前記少なくとも1つの切欠構造の幅、深さ、体積の約50%より大きいことを特徴とする請求項10に記載の方法。
- 前記第2銅鍍金槽は、前記第1銅鍍金槽よりも高濃度の銅イオンを含んでいることを特徴とする請求項10に記載の方法。
- 前記基板の前記表面は露出した拡散隔層を備えることを特徴とする請求項10に記載の方法。
- 前記拡散隔層がタンタル、窒化タンタル、炭化タンタル、炭窒化タンタル、チタン、窒化チタン、炭化チタン、炭窒化チタン、タングステン、窒化タングステン、炭化タングステン、炭窒化タングステン、もしくはこれらの組合せであることを特徴とする請求項15に記載の方法。
- 前記ルテニウム金属膜の厚みが約1nmから約20nmであることを特徴とする請求項10に記載の方法。
- 前記銅金属層の第1アニーリング工程および前記付加銅金属層の第2アニーリング工程において、前記銅金属層を約100℃から500℃の不活性ガス、水素ガス、もしくはこれらの組合せに露出することを特徴とする請求項10に記載の方法。
- 前記基板の温度が約100℃から約500℃のときに、不活性ガス、水素ガス、もしくは両者の組合せを含む非酸化性ガス内で前記ルテニウム金属膜をアニーリングする第3アニーリング工程を備えることを特徴とする請求項1に記載の方法。
- 前記少なくとも1つの切欠構造がビア、トレンチ、もしくはビアとトレンチの両方を部分的に製造された回路基板上に備えることを特徴とする請求項10に記載の方法。
- 前記接触工程が電気化学的銅鍍金処理または非電気的銅鍍金処理を備えることを特徴とする請求項10に記載の方法。
- 前記第1及び第2の銅鍍金槽はそれぞれ異なった化学物質を含んでいることを特徴とする請求項10に記載の方法。
- 前記第1接触工程および前記第2接触工程において、前記少なくとも1つの切欠構造の上方でさらに蒸着を行い、前記少なくとも1つの切欠構造を過多充満させることを特徴とする請求項10に記載の方法。
- 一部組み立てられた集積回路においてダマスク構造を充填する方法において、
Ru3(CO)12前駆体と一酸化炭素キャリアガスとを含むプロセスガスを用いた熱化学蒸着法により、実質的に酸素及び炭素を含まず厚みが約1nmから約20nmである長尺のルテニウム金属膜を、前記部分的に製造された集積回路の少なくとも1つの切欠構造内で拡散隔層上に蒸着させる蒸着工程、
前記基板の温度が約100℃から500℃のときに、不活性ガス、水素ガス、もしくは両者の組合せを含む非酸化性ガス内で前記ルテニウム金属膜をアニーリングする第1アニーリング工程、
前記一部組み立てられた集積回路の少なくとも一部を第1銅鍍金槽に浸して前記ルテニウム金属膜上に長尺の銅金属層を蒸着させ、前記ルテニウム金属膜と前記銅金属層とがともに前記少なくとも1つの切欠構造の幅、深さ、体積の100%未満である第1幅、第1深さ、第1体積で前記少なくとも1つの切欠構造を充填する第1浸漬工程、
前記一部製造された集積回路を前記第1銅鍍金槽から取出す第1取出し工程、
前記基板の温度が約100℃から約500℃のときに、不活性ガス、水素ガス、もしくは両者の組合せを含む非酸化性ガス内で、前記銅金属層をアニーリングする第2アニーリング工程、
前記一部製造された集積回路の少なくとも一部を第2銅鍍金槽に浸し、前記少なくとも1つの切欠構造の幅、深さ、体積の100%以下である第1幅、第1深さ、第1体積よりも大きい第2幅、第2深さ、第2体積で、前記少なくとも1つの切欠構造の少なくとも一部充填する付加銅金属を蒸着させる第2浸漬工程、
前記一部製造された集積回路を前記第2銅鍍金槽から取出す第2取出し工程、及び
前記基板の温度が約100℃から約500℃のときに、不活性ガス、水素ガス、もしくは両者の組合せを含む非酸化性ガス内で前記付加銅金属をアニーリングし、前記ルテニウム金属膜上において前記アニーリング済銅金属層と前記アニーリング付加銅金属とから銅金属粒を形成する第3アニーリング工程を備えることを特徴とする方法。 - 前記第2浸漬工程において、前記第2幅、第2深さ、第2体積は前記少なくとも1つの切欠構造の幅、深さ、面積の100%未満であり、かつ、前記第2浸漬工程と前記第2取出し工程と前記第3アニーリング工程とを必要な回数繰り返すことで、前記少なくとも1つの切欠構造の幅、深さ及び体積の約90%から100%である第3幅、第3深さ及び第3体積で前記少なくとも1つの切欠構造をさらに充填することを特徴とする請求項24に記載の方法。
- 前記第2浸漬工程において、前記少なくとも1つの切欠構造の幅、深さ、体積の約50%未満となるように、前記1つの切欠構造が充填されることを特徴とする請求項24に記載の方法。
- 前記第2浸漬工程において、前記少なくとも1つの切欠構造の幅、深さ、体積の約50%よりも大きくなるように、前記1つの切欠構造が充填されることを特徴とする請求項24に記載の方法。
- 前記第1及び第2の銅鍍金槽はそれぞれ異なった化学物質を含んでいることを特徴とする請求項24に記載の方法。
- 前記拡散隔層がタンタル、窒化タンタル、炭化タンタル、炭窒化タンタル、チタン、窒化チタン、炭化チタン、炭窒化チタン、タングステン、 窒化タングステン、炭化タングステン、炭窒化タングステン、もしくはこれらの組合せを特徴とする請求項24に記載の方法。
- 前記第2浸漬工程において、前記少なくとも1つの切欠構造の上方で蒸着をさらに行い、前記少なくとも1つの切欠構造を過多充満させることを特徴とする請求項24に記載の方法。
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PCT/US2010/050878 WO2011041522A2 (en) | 2009-09-30 | 2010-09-30 | Methods for multi-step copper plating on a continuous ruthenium film in recessed features |
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KR20120082901A (ko) | 2012-07-24 |
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