JP2013089971A - 保護膜溶液組成物、薄膜トランジスター表示板及び薄膜トランジスター表示板の製造方法 - Google Patents
保護膜溶液組成物、薄膜トランジスター表示板及び薄膜トランジスター表示板の製造方法 Download PDFInfo
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- JP2013089971A JP2013089971A JP2012231351A JP2012231351A JP2013089971A JP 2013089971 A JP2013089971 A JP 2013089971A JP 2012231351 A JP2012231351 A JP 2012231351A JP 2012231351 A JP2012231351 A JP 2012231351A JP 2013089971 A JP2013089971 A JP 2013089971A
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- Prior art keywords
- thin film
- film transistor
- transistor array
- array panel
- siloxane units
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000203 mixture Substances 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title claims description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000011241 protective layer Substances 0.000 title abstract 2
- -1 siloxane unit Chemical group 0.000 claims abstract description 68
- 239000000126 substance Substances 0.000 claims abstract description 44
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- 125000001424 substituent group Chemical group 0.000 claims abstract description 14
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- 229930195734 saturated hydrocarbon Natural products 0.000 claims abstract description 11
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- 239000010936 titanium Substances 0.000 claims description 16
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 10
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- RLUCXJBHKHIDSP-UHFFFAOYSA-N propane-1,2-diol;propanoic acid Chemical compound CCC(O)=O.CC(O)CO RLUCXJBHKHIDSP-UHFFFAOYSA-N 0.000 description 2
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- 238000003860 storage Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
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- C—CHEMISTRY; METALLURGY
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Abstract
【解決手段】下記の化学式1で表わされる有機シロキサン樹脂を含む保護膜溶液組成物:
・・・化学式1
(式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す)。
【選択図】なし
Description
式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す。
式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す。
式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す。
ここで、上記の化学式1中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれたいずれか一つの置換基であってもよく、x、yはそれぞれ1乃至200であってもよい。前記有機シロキサン樹脂の個別的なx単位及びy単位は混合されていてもよく、隣り合う鎖のyシロキサン単位に共有結合された隣り合う鎖のxシロキサン単位の組み合わせが採用可能であるが、これに制限されない。なお、上記の化学式1中、Rは、メチル基、ビニル基及びフェニル基のうちの一つを含んでいてもよい。上記の化学式1の波線は有機シロキサン樹脂のx単位またはy単位の酸素原子が水素原子、他のxシロキサン単位または他のyシロキサン単位との結合を示す。有機シロキサン樹脂のx単位またはy単位の酸素原子が他のxシロキサン単位または他のyシロキサン単位に結合されている場合、上記の化学式1中、有機シロキサン樹脂のx単位またはy単位の酸素原子は他のxシロキサン単位または他のyシロキサン単位のシリコン(Si)原子に結合される。このため、上記の化学式1は複数のx単位または複数のy単位またはこれらの組み合わせが上下左右方向に発生するパターンを有していてもよい。
化学式2 化学式3
以下、本発明の実施形態に係る保護膜溶液組成物を用いて形成した保護膜を備える薄膜トランジスター表示板について説明する。
ここで、上記の化学式1中、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位またはyシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す。Rは、1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であってもよく、x、yはそれぞれ1乃至200であってもよい。なお、上記の化学式1中、Rは、メチル基、ビニル基及びフェニル基のうちの一つを含んでいてもよい。
ここで、上記の化学式1中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であってもよく、x、yはそれぞれ1乃至200であってもよい。また、上記の化学式1中、Rは、メチル基、ビニル基及びフェニル基のうちの一つを含んでいてもよい。上記の化学式1の波線は、有機シロキサン樹脂のx単位またはy単位の酸素原子が水素原子、他のxシロキサン単位または他のyシロキサン単位と結合されている場合を含む。有機シロキサン樹脂のx単位またはy単位の酸素原子が他のxシロキサン単位または他のyシロキサン単位に結合されている場合に、化学式1における有機シロキサン樹脂のx単位またはy単位の酸素原子は、他のxシロキサン単位または他のyシロキサン単位のシリコン(Si)原子に結合する。このため、化学式1は、複数のx単位または複数のy単位またはこれらの組み合わせが上下左右方向に発生するパターンを有していてもよい。
51…第2の感光膜パターン
110…基板
121…ゲート線
151…半導体層
154…半導体層の突出部
171…データ線
173…ソース電極
175…ドレイン電極
180…保護膜
Claims (22)
- 下記の化学式1で表わされる有機シロキサン樹脂を含む保護膜溶液組成物:
・・・化学式1
(式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す)。 - プロピレングリコールモノメチルエーテル及び/またはプロピレングリコールモノエチルアセテートを有する溶媒をさらに含む請求項1に記載の保護膜溶液組成物。
- 前記有機シロキサン樹脂が4wt%乃至25wt%の含量にて含まれている請求項2に記載の保護膜溶液組成物。
- 上記の化学式1中、Rは、メチル基、ビニル基及びフェニル基のうちの少なくとも一つの置換基を含む請求項3に記載の保護膜溶液組成物。
- 前記有機シロキサン樹脂は、分子量が100乃至10000である請求項4に記載の保護膜溶液組成物。
- 基板と、
前記基板の上に位置するゲート線、半導体層、ソース電極及びドレイン電極を有するデータ線と、
前記ゲート線、前記半導体層、前記データ線の上に位置し、下記の化学式1で表わされる有機シロキサン樹脂を含む保護膜と、
を備える薄膜トランジスター表示板:
・・・化学式1
(式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す)。 - 前記半導体層は、酸化物半導体から形成されている請求項6に記載の薄膜トランジスター表示板。
- 前記ゲート線は、チタン、タンタル及びモリブデンのうちの少なくとも一つを含む下部膜と、銅または銅合金を含む上部膜と、から形成されている請求項7に記載の薄膜トランジスター表示板。
- 前記データ線は、チタン、タンタル及びモリブデンのうちの少なくとも一つを含む下部膜と、銅または銅合金を含む上部膜と、から形成されている請求項8に記載の薄膜トランジスター表示板。
- 前記保護膜の上に位置する画素電極をさらに備え、
前記保護膜は接触孔を有し、前記接触孔を介して前記画素電極と前記ドレイン電極とが接続される請求項9に記載の薄膜トランジスター表示板。 - 上記の化学式1中、Rは、メチル基、ビニル基及びフェニル基のうちの少なくとも一つを含む請求項10に記載の薄膜トランジスター表示板。
- 前記有機シロキサン樹脂は、分子量が100乃至10000である請求項11に記載の薄膜トランジスター表示板。
- 前記基板の上に位置するゲート絶縁膜をさらに備える請求項6に記載の薄膜トランジスター表示板。
- 前記ゲート絶縁膜は、酸化ケイ素、窒化ケイ素及び酸窒化ケイ素のうちの少なくとも一つを含む請求項13に記載の薄膜トランジスター表示板。
- 基板の上にゲート線、半導体層、ソース電極及びデータ線を有する薄膜トランジスターを形成するステップと、
前記基板の上に前記薄膜トランジスターを覆うように下記の化学式1で表わされる有機シロキサン樹脂を含む溶液をコーティングして予備保護膜を形成するステップと、
前記予備保護膜にマスクを用いて光を照射するステップと、
前記予備保護膜を現像して接触孔を有する保護膜を形成するステップと、
を含む薄膜トランジスター表示板の製造方法:
・・・化学式1
(式中、Rは1乃至25個の炭素を有する飽和炭化水素または不飽和炭化水素から選ばれた少なくとも一つの置換基であり、x、yはそれぞれ1乃至200であり、各波線は水素原子、xシロキサン単位またはyシロキサン単位との結合を示すか、あるいは、xシロキサン単位、yシロキサン単位またはこれらの組み合わせを含む他の有機シロキサン鎖のxシロキサン単位またはyシロキサン単位との結合を示す)。 - 上記の化学式1で表わされる有機シロキサン樹脂を含む溶液は、プロピレングリコールモノメチルエーテルまたはプロピレングリコールモノエチルアセテートの少なくとも1つを含む請求項15に記載の薄膜トランジスター表示板の製造方法。
- 上記の化学式1で表わされる有機シロキサン樹脂を含む溶液には、前記有機シロキサン樹脂が4wt%乃至25wt%含まれている請求項16に記載の薄膜トランジスター表示板の製造方法。
- 上記の化学式1中、Rは、メチル基、ビニル基及びフェニル基のうちの一つを含む請求項17に記載の薄膜トランジスター表示板の製造方法。
- 前記有機シロキサン樹脂は、分子量が100乃至10000である請求項18に記載の薄膜トランジスター表示板の製造方法。
- 前記半導体層は、酸化物半導体から形成する請求項15に記載の薄膜トランジスター表示板の製造方法。
- 前記ゲート線は、チタン、タンタル及びモリブデンのうちの少なくとも一つを含む下部膜と、銅または銅合金を含む上部膜と、から形成されている請求項20に記載の薄膜トランジスター表示板の製造方法。
- 前記データ線は、チタン、タンタル及びモリブデンのうちの少なくとも一つを含む下部膜と、銅または銅合金を含む上部膜と、から形成されている請求項21に記載の薄膜トランジスター表示板の製造方法。
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Also Published As
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JP6084805B2 (ja) | 2017-02-22 |
US20150050597A1 (en) | 2015-02-19 |
US9188867B2 (en) | 2015-11-17 |
KR20130042867A (ko) | 2013-04-29 |
US8890139B2 (en) | 2014-11-18 |
US20130099228A1 (en) | 2013-04-25 |
US20140011932A1 (en) | 2014-01-09 |
CN103102801A (zh) | 2013-05-15 |
US9470978B2 (en) | 2016-10-18 |
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