JP2013004576A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2013004576A
JP2013004576A JP2011131251A JP2011131251A JP2013004576A JP 2013004576 A JP2013004576 A JP 2013004576A JP 2011131251 A JP2011131251 A JP 2011131251A JP 2011131251 A JP2011131251 A JP 2011131251A JP 2013004576 A JP2013004576 A JP 2013004576A
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Japan
Prior art keywords
metal film
semiconductor device
core substrate
semiconductor element
insulating layer
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Pending
Application number
JP2011131251A
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English (en)
Japanese (ja)
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JP2013004576A5 (enExample
Inventor
Michio Horiuchi
道夫 堀内
Yasue Tokutake
安衛 徳武
Yuichi Matsuda
勇一 松田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2011131251A priority Critical patent/JP2013004576A/ja
Priority to US13/493,123 priority patent/US8664764B2/en
Publication of JP2013004576A publication Critical patent/JP2013004576A/ja
Publication of JP2013004576A5 publication Critical patent/JP2013004576A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
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    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
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    • H01L2225/1035—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
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    • H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
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    • H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
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    • H01L2225/1094—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2011131251A 2011-06-13 2011-06-13 半導体装置 Pending JP2013004576A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011131251A JP2013004576A (ja) 2011-06-13 2011-06-13 半導体装置
US13/493,123 US8664764B2 (en) 2011-06-13 2012-06-11 Semiconductor device including a core substrate and a semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011131251A JP2013004576A (ja) 2011-06-13 2011-06-13 半導体装置

Publications (2)

Publication Number Publication Date
JP2013004576A true JP2013004576A (ja) 2013-01-07
JP2013004576A5 JP2013004576A5 (enExample) 2014-07-03

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JP2011131251A Pending JP2013004576A (ja) 2011-06-13 2011-06-13 半導体装置

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US (1) US8664764B2 (enExample)
JP (1) JP2013004576A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082447A (ja) * 2012-09-26 2014-05-08 Fujifilm Corp 多層基板および半導体パッケージ
WO2014156025A1 (ja) * 2013-03-26 2014-10-02 田中貴金属工業株式会社 半導体装置及び放熱機構
JPWO2013073082A1 (ja) * 2011-11-16 2015-04-02 パナソニック株式会社 拡張型半導体チップ及び半導体装置
JP2016195238A (ja) * 2015-03-31 2016-11-17 新光電気工業株式会社 配線基板及び半導体パッケージ
JP2021502706A (ja) * 2017-11-10 2021-01-28 エルペーカーエフ レーザー ウント エレクトロニクス アーゲー 半導体ウェハの集積方法及び装置
JP2024090149A (ja) * 2022-12-22 2024-07-04 株式会社村田製作所 複合部品デバイスおよびその製造方法

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JP2012256675A (ja) * 2011-06-08 2012-12-27 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びその製造方法
US9030017B2 (en) 2012-11-13 2015-05-12 Invensas Corporation Z-connection using electroless plating
US20140151095A1 (en) * 2012-12-05 2014-06-05 Samsung Electro-Mechanics Co., Ltd. Printed circuit board and method for manufacturing the same
CN104185365B (zh) * 2013-05-23 2018-06-26 比亚迪股份有限公司 一种线路板及其制备方法
JP6031060B2 (ja) * 2014-03-31 2016-11-24 信越化学工業株式会社 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法
CN105118815B (zh) * 2015-08-13 2017-09-29 上海航天电子通讯设备研究所 一种基于铝基板的三维封装用垂直互连结构及其制备方法
KR102561987B1 (ko) * 2017-01-11 2023-07-31 삼성전기주식회사 반도체 패키지와 그 제조 방법

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JP2011023626A (ja) * 2009-07-17 2011-02-03 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法

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US8193092B2 (en) * 2007-07-31 2012-06-05 Micron Technology, Inc. Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices
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US8129828B2 (en) * 2008-09-29 2012-03-06 Ngk Spark Plug Co., Ltd. Wiring substrate with reinforcement
JP5249132B2 (ja) * 2009-06-03 2013-07-31 新光電気工業株式会社 配線基板
JP5280945B2 (ja) * 2009-06-19 2013-09-04 新光電気工業株式会社 半導体装置及びその製造方法
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Publication number Priority date Publication date Assignee Title
JPH0433396A (ja) * 1990-05-30 1992-02-04 Fujitsu Ltd 空気層を有するセラミック多層プリント板
JP2004153084A (ja) * 2002-10-31 2004-05-27 Denso Corp 多層配線基板の製造方法及び多層配線基板
JP2006019342A (ja) * 2004-06-30 2006-01-19 Tdk Corp 半導体ｉｃ内蔵基板
WO2007069789A1 (ja) * 2005-12-16 2007-06-21 Ibiden Co., Ltd. 多層プリント配線板およびその製造方法
JP2008091471A (ja) * 2006-09-29 2008-04-17 Tdk Corp 半導体内蔵基板及びその製造方法
JP2011023626A (ja) * 2009-07-17 2011-02-03 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2013073082A1 (ja) * 2011-11-16 2015-04-02 パナソニック株式会社 拡張型半導体チップ及び半導体装置
JP2014082447A (ja) * 2012-09-26 2014-05-08 Fujifilm Corp 多層基板および半導体パッケージ
WO2014156025A1 (ja) * 2013-03-26 2014-10-02 田中貴金属工業株式会社 半導体装置及び放熱機構
JP2014192209A (ja) * 2013-03-26 2014-10-06 Tanaka Kikinzoku Kogyo Kk 半導体装置及び放熱機構
US9607922B2 (en) 2013-03-26 2017-03-28 Tanaka Kikinzoku Kogyo K.K. Semiconductor device and heat-dissipating mechanism
JP2016195238A (ja) * 2015-03-31 2016-11-17 新光電気工業株式会社 配線基板及び半導体パッケージ
JP2021502706A (ja) * 2017-11-10 2021-01-28 エルペーカーエフ レーザー ウント エレクトロニクス アーゲー 半導体ウェハの集積方法及び装置
JP7090153B2 (ja) 2017-11-10 2022-06-23 エルペーカーエフ レーザー ウント エレクトロニクス アーゲー 半導体ウェハの集積方法及び装置
JP2024090149A (ja) * 2022-12-22 2024-07-04 株式会社村田製作所 複合部品デバイスおよびその製造方法
JP7715143B2 (ja) 2022-12-22 2025-07-30 株式会社村田製作所 複合部品デバイスおよびその製造方法

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