JP2013004576A5 - - Google Patents
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- Publication number
- JP2013004576A5 JP2013004576A5 JP2011131251A JP2011131251A JP2013004576A5 JP 2013004576 A5 JP2013004576 A5 JP 2013004576A5 JP 2011131251 A JP2011131251 A JP 2011131251A JP 2011131251 A JP2011131251 A JP 2011131251A JP 2013004576 A5 JP2013004576 A5 JP 2013004576A5
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- core substrate
- semiconductor device
- semiconductor element
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000004020 conductor Substances 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 9
- 230000004308 accommodation Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 claims 7
- 230000002093 peripheral effect Effects 0.000 claims 2
- 239000007787 solid Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011131251A JP2013004576A (ja) | 2011-06-13 | 2011-06-13 | 半導体装置 |
| US13/493,123 US8664764B2 (en) | 2011-06-13 | 2012-06-11 | Semiconductor device including a core substrate and a semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011131251A JP2013004576A (ja) | 2011-06-13 | 2011-06-13 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013004576A JP2013004576A (ja) | 2013-01-07 |
| JP2013004576A5 true JP2013004576A5 (enExample) | 2014-07-03 |
Family
ID=47292477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011131251A Pending JP2013004576A (ja) | 2011-06-13 | 2011-06-13 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8664764B2 (enExample) |
| JP (1) | JP2013004576A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012256675A (ja) * | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びその製造方法 |
| CN103650135B (zh) * | 2011-11-16 | 2017-03-15 | 松下电器产业株式会社 | 半导体装置 |
| JP5752741B2 (ja) * | 2012-09-26 | 2015-07-22 | 富士フイルム株式会社 | 多層基板および半導体パッケージ |
| US9030017B2 (en) | 2012-11-13 | 2015-05-12 | Invensas Corporation | Z-connection using electroless plating |
| US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
| JP6130696B2 (ja) * | 2013-03-26 | 2017-05-17 | 田中貴金属工業株式会社 | 半導体装置 |
| CN104185365B (zh) * | 2013-05-23 | 2018-06-26 | 比亚迪股份有限公司 | 一种线路板及其制备方法 |
| JP6031060B2 (ja) * | 2014-03-31 | 2016-11-24 | 信越化学工業株式会社 | 半導体装置、積層型半導体装置、封止後積層型半導体装置、及びこれらの製造方法 |
| JP6600573B2 (ja) * | 2015-03-31 | 2019-10-30 | 新光電気工業株式会社 | 配線基板及び半導体パッケージ |
| CN105118815B (zh) * | 2015-08-13 | 2017-09-29 | 上海航天电子通讯设备研究所 | 一种基于铝基板的三维封装用垂直互连结构及其制备方法 |
| KR102561987B1 (ko) * | 2017-01-11 | 2023-07-31 | 삼성전기주식회사 | 반도체 패키지와 그 제조 방법 |
| MY197514A (en) * | 2017-11-10 | 2023-06-19 | Lpkf Laser & Electronics Ag | Method and device for the integration of semiconductor wafers |
| JP7715143B2 (ja) * | 2022-12-22 | 2025-07-30 | 株式会社村田製作所 | 複合部品デバイスおよびその製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0433396A (ja) * | 1990-05-30 | 1992-02-04 | Fujitsu Ltd | 空気層を有するセラミック多層プリント板 |
| TW472330B (en) * | 1999-08-26 | 2002-01-11 | Toshiba Corp | Semiconductor device and the manufacturing method thereof |
| US6392301B1 (en) * | 1999-10-22 | 2002-05-21 | Intel Corporation | Chip package and method |
| JP4103549B2 (ja) * | 2002-10-31 | 2008-06-18 | 株式会社デンソー | 多層配線基板の製造方法及び多層配線基板 |
| JP2006019342A (ja) * | 2004-06-30 | 2006-01-19 | Tdk Corp | 半導体ｉｃ内蔵基板 |
| EP1962569A1 (en) * | 2005-12-16 | 2008-08-27 | Ibiden Co., Ltd. | Multilayer printed wiring plate, and method for fabricating the same |
| JP4277036B2 (ja) * | 2006-09-29 | 2009-06-10 | Ｔｄｋ株式会社 | 半導体内蔵基板及びその製造方法 |
| US8193092B2 (en) * | 2007-07-31 | 2012-06-05 | Micron Technology, Inc. | Semiconductor devices including a through-substrate conductive member with an exposed end and methods of manufacturing such semiconductor devices |
| TWI328423B (en) * | 2007-09-14 | 2010-08-01 | Unimicron Technology Corp | Circuit board structure having heat-dissipating structure |
| US8129828B2 (en) * | 2008-09-29 | 2012-03-06 | Ngk Spark Plug Co., Ltd. | Wiring substrate with reinforcement |
| JP5249132B2 (ja) * | 2009-06-03 | 2013-07-31 | 新光電気工業株式会社 | 配線基板 |
| JP5280945B2 (ja) * | 2009-06-19 | 2013-09-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| JP5280309B2 (ja) * | 2009-07-17 | 2013-09-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
| WO2011027588A1 (ja) * | 2009-09-04 | 2011-03-10 | シャープ株式会社 | 電子パッケージ、照明装置、表示装置 |
-
2011
- 2011-06-13 JP JP2011131251A patent/JP2013004576A/ja active Pending
-
2012
- 2012-06-11 US US13/493,123 patent/US8664764B2/en active Active
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