JP2012519378A - スパッタされた圧電材料 - Google Patents

スパッタされた圧電材料 Download PDF

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Publication number
JP2012519378A
JP2012519378A JP2011552079A JP2011552079A JP2012519378A JP 2012519378 A JP2012519378 A JP 2012519378A JP 2011552079 A JP2011552079 A JP 2011552079A JP 2011552079 A JP2011552079 A JP 2011552079A JP 2012519378 A JP2012519378 A JP 2012519378A
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JP
Japan
Prior art keywords
piezoelectric
piezoelectric material
layer
seed layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2011552079A
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English (en)
Japanese (ja)
Other versions
JP2012519378A5 (OSRAM
Inventor
リー ユーミン
バークマイヤー ジェフリー
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Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of JP2012519378A publication Critical patent/JP2012519378A/ja
Publication of JP2012519378A5 publication Critical patent/JP2012519378A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047—Membrane type
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/14—Structure thereof only for on-demand ink jet heads
    • B41J2/14201—Structure of print heads with piezoelectric elements
    • B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1607—Production of print heads with piezoelectric elements
    • B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01—Ink jet
    • B41J2/135—Nozzles
    • B41J2/16—Production of nozzles
    • B41J2/1621—Manufacturing processes
    • B41J2/164—Manufacturing processes thin film formation
    • B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Micromachines (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
JP2011552079A 2009-02-26 2010-02-23 スパッタされた圧電材料 Abandoned JP2012519378A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/393,644 2009-02-26
US12/393,644 US8164234B2 (en) 2009-02-26 2009-02-26 Sputtered piezoelectric material
PCT/US2010/025012 WO2010099091A1 (en) 2009-02-26 2010-02-23 Sputtered piezoelectric material

Publications (2)

Publication Number Publication Date
JP2012519378A true JP2012519378A (ja) 2012-08-23
JP2012519378A5 JP2012519378A5 (OSRAM) 2013-04-04

Family

ID=42630346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011552079A Abandoned JP2012519378A (ja) 2009-02-26 2010-02-23 スパッタされた圧電材料

Country Status (6)

Country Link
US (2) US8164234B2 (OSRAM)
EP (1) EP2401414B1 (OSRAM)
JP (1) JP2012519378A (OSRAM)
KR (1) KR101312485B1 (OSRAM)
CN (1) CN102333904B (OSRAM)
WO (1) WO2010099091A1 (OSRAM)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030064A1 (ja) * 2013-08-27 2015-03-05 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP2015195373A (ja) * 2014-03-24 2015-11-05 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス
JP2020097186A (ja) * 2018-12-19 2020-06-25 エスアイアイ・プリンテック株式会社 ヘッドチップ、液体噴射ヘッド、液体噴射記録装置およびヘッドチップの製造方法
JP2023047912A (ja) * 2021-09-27 2023-04-06 富士フイルム株式会社 圧電積層体及び圧電素子
JP2023047913A (ja) * 2021-09-27 2023-04-06 富士フイルム株式会社 圧電積層体及び圧電素子

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010129756A1 (en) 2009-05-08 2010-11-11 Swagelok Company Conduit fitting with attached torque collar
JP5399970B2 (ja) * 2010-03-31 2014-01-29 パナソニック株式会社 強誘電体デバイスの製造方法
FR2976126B1 (fr) * 2011-06-01 2014-05-09 Commissariat Energie Atomique Composant electrique comprenant un materiau de structure perovskite et des electrodes optimisees et procede de fabrication
US10266936B2 (en) 2011-10-17 2019-04-23 The United States Of America As Represented By The Secretary Of The Army Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof
WO2014018028A1 (en) * 2012-07-25 2014-01-30 Hewlett-Packard Development Company, L.P. Piezoelectric actuator and method of making a piezoelectric actuator
EP2850667B1 (en) * 2012-07-31 2017-10-25 Hewlett-Packard Development Company, L.P. Thin film stack
WO2017213415A1 (ko) * 2016-06-10 2017-12-14 주식회사 모다이노칩 음향 출력 장치
KR101865347B1 (ko) * 2016-06-10 2018-06-07 주식회사 모다이노칩 음향 출력 장치
CN112853286A (zh) 2019-11-12 2021-05-28 应用材料公司 压电膜的物理气相沉积
US20240065105A1 (en) * 2022-08-17 2024-02-22 Fujifilm Dimatix, Inc. Process of epitaxial grown pzt film and method of making a pzt device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209912A (ja) * 2004-01-23 2005-08-04 Seiko Epson Corp 圧電素子及び液体噴射ヘッド並びに圧電素子の製造方法
JP2006186258A (ja) * 2004-12-28 2006-07-13 Seiko Epson Corp 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
JP2007314368A (ja) * 2006-05-25 2007-12-06 Fujifilm Corp ペロブスカイト型酸化物、強誘電素子、圧電アクチュエータ、及び液体吐出装置
JP2008094707A (ja) * 2006-09-15 2008-04-24 Fujifilm Corp ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
JP2008270704A (ja) * 2007-03-22 2008-11-06 Fujifilm Corp 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置

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JPH068509B2 (ja) * 1985-09-17 1994-02-02 勝 岡田 強誘電体薄膜の製造方法
JPH04285025A (ja) * 1991-03-14 1992-10-09 Toshiba Corp 圧電単結晶の単一分域化方法
JP3047316B2 (ja) * 1994-11-11 2000-05-29 富士ゼロックス株式会社 エピタキシャル強誘電体薄膜素子およびその作製方法
US6502928B1 (en) * 1998-07-29 2003-01-07 Seiko Epson Corporation Ink jet recording head and ink jet recording apparatus comprising the same
US6576546B2 (en) * 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
JP4182329B2 (ja) * 2001-09-28 2008-11-19 セイコーエプソン株式会社 圧電体薄膜素子およびその製造方法、ならびにこれを用いた液体吐出ヘッド及び液体吐出装置
DE10231471A1 (de) * 2001-09-29 2003-06-26 Ceramtec Ag Piezokeramische Werkstoffe auf der Basis von Blei-Zirkonat-Titanat (PZT) mit valenzkompensierten Ag-haltigen Komplexen
US6728093B2 (en) * 2002-07-03 2004-04-27 Ramtron International Corporation Method for producing crystallographically textured electrodes for textured PZT capacitors
KR101137643B1 (ko) * 2003-10-10 2012-04-19 후지필름 디마틱스, 인크. 박막을 구비한 프린트 헤드
US7348715B2 (en) * 2004-01-27 2008-03-25 Matsushita Electric Industrial Co., Ltd. Piezoelectric element and method for manufacturing the same, and ink jet head and ink jet recording apparatus using the piezoelectric element
US7399067B2 (en) * 2004-02-27 2008-07-15 Canon Kabushiki Kaisha Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head
JP4709544B2 (ja) * 2004-05-31 2011-06-22 セイコーエプソン株式会社 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ
JP4091641B2 (ja) * 2006-04-07 2008-05-28 富士フイルム株式会社 圧電素子とその製造方法、及びインクジェット式記録ヘッド
US7456548B2 (en) * 2006-05-09 2008-11-25 Canon Kabushiki Kaisha Piezoelectric element, piezoelectric actuator, and ink jet recording head
JP5251031B2 (ja) * 2006-09-08 2013-07-31 セイコーエプソン株式会社 圧電素子、液体噴射ヘッド、液体噴射装置、センサー
US7918542B2 (en) * 2006-09-15 2011-04-05 Fujifilm Corporation Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device
EP1973177B8 (en) * 2007-03-22 2015-01-21 FUJIFILM Corporation Ferroelectric film, process for producing the same, ferroelectric device, and liquid discharge device
JP2009152235A (ja) * 2007-12-18 2009-07-09 Panasonic Corp 強誘電体積層構造及びその製造方法、電界効果トランジスタ及びその製造方法、並びに強誘電体キャパシタ及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005209912A (ja) * 2004-01-23 2005-08-04 Seiko Epson Corp 圧電素子及び液体噴射ヘッド並びに圧電素子の製造方法
JP2006186258A (ja) * 2004-12-28 2006-07-13 Seiko Epson Corp 圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器
JP2007314368A (ja) * 2006-05-25 2007-12-06 Fujifilm Corp ペロブスカイト型酸化物、強誘電素子、圧電アクチュエータ、及び液体吐出装置
JP2008094707A (ja) * 2006-09-15 2008-04-24 Fujifilm Corp ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
JP2008270704A (ja) * 2007-03-22 2008-11-06 Fujifilm Corp 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030064A1 (ja) * 2013-08-27 2015-03-05 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP2015065430A (ja) * 2013-08-27 2015-04-09 三菱マテリアル株式会社 ＰＮｂＺＴ薄膜の製造方法
JP2015195373A (ja) * 2014-03-24 2015-11-05 セイコーエプソン株式会社 圧電素子及び圧電素子応用デバイス
JP2020097186A (ja) * 2018-12-19 2020-06-25 エスアイアイ・プリンテック株式会社 ヘッドチップ、液体噴射ヘッド、液体噴射記録装置およびヘッドチップの製造方法
JP7193334B2 (ja) 2018-12-19 2022-12-20 エスアイアイ・プリンテック株式会社 ヘッドチップ、液体噴射ヘッド、液体噴射記録装置およびヘッドチップの製造方法
JP2023047912A (ja) * 2021-09-27 2023-04-06 富士フイルム株式会社 圧電積層体及び圧電素子
JP2023047913A (ja) * 2021-09-27 2023-04-06 富士フイルム株式会社 圧電積層体及び圧電素子
JP7667052B2 (ja) 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子
JP7667051B2 (ja) 2021-09-27 2025-04-22 富士フイルム株式会社 圧電積層体及び圧電素子

Also Published As

Publication number Publication date
KR101312485B1 (ko) 2013-10-01
EP2401414A1 (en) 2012-01-04
CN102333904B (zh) 2013-08-07
KR20110120342A (ko) 2011-11-03
WO2010099091A1 (en) 2010-09-02
US20120177815A1 (en) 2012-07-12
EP2401414B1 (en) 2020-06-03
US8164234B2 (en) 2012-04-24
US20100213795A1 (en) 2010-08-26
CN102333904A (zh) 2012-01-25
EP2401414A4 (en) 2013-10-09

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