CN102333904B - 溅射压电材料 - Google Patents
溅射压电材料 Download PDFInfo
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Abstract
本发明描述了具有Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby组成的压电致动器,其中x>-0.02并且y>0。该压电材料可以具有钙钛矿,这使得当在致动器上施加偏压时可以具有良好的弯曲行为。
Description
背景技术
本发明涉及形成压电材料。
压电材料在受到机械应力时能够产生电压差。备选地,在压电材料上施加电压可以引起逆压电性,即,在施加电压时压电材料机械变形。逆压电性可以在压电材料中引起极高的弯曲力。产生电和逆压电性这两种性质都被利用于在电和机械装置中的应用,诸如换能器,例如,致动器和传感器。包括致动器和传感器的组合的复式换能器可以一起组合在微机电系统(MEMS)中。
压电材料如钛酸铅锆也可以用于形成铁电RAM(FRAM)。用于致动器或FRAM的压电材料可以获自压电材料的溶胶凝胶、陶瓷印刷电路基板(ceramic green sheet)、金属有机化学气相沉积(MOCVD)形成的层或者预烧制的块状体。然而,每种方法可能形成不同品质和组成的压电材料。例如,溶胶凝胶形成技术可能需要许多单独的薄层以形成厚的压电材料。并且溶胶凝胶形成可能在最终的材料中留下结合剂。MOCVD典型地形成压电材料的薄层,并且可能具有非常低的沉积速率。
发明内容
在一个实施方案中,压电材料包括Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby的主体,其中x>-0.02并且y>0。
在又一个实施方案中, 包含陶瓷主体的陶瓷靶具有
Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby的组成,其中-0.1≤x≤0.30并且0<y≤0.2。
描述一种形成压电材料的方法。对陶瓷靶施加偏压。所述靶在室中。将在所述室中的载体加热至高于450℃。将沉积表面支撑在所述载体上。将惰性和反应性气体引入到室中,以使来自陶瓷靶的陶瓷材料沉积在沉积表面上以形成压电材料。
本文中所述的装置的实施方式可以包括下列特征中的一个或多个。对于压电材料,可以是-0.01≤x≤0.15并且0<y≤0.15,例如0≤x≤0.05并且0.08<y≤0.13。材料可以具有钙钛矿结晶结构。Y可以为约0.1。压电叠层可以包括所述压电材料,在该材料的第一侧面上具有第一电极,并且在第二侧面上具有第二电极。第一电极可以包括直接邻接于压电材料的导电氧化物。第二电极可以包括邻接于压电材料的晶种层。晶种层可以包括铱。晶种层可以具有(111)晶体取向的膜表面。晶种层可以包括铱氧化物。第一电极可以包括铂。MEMS可以包括主体,所述主体具有在其中形成的可压缩的室和与该室相邻的致动器,其中所述致动器包括压电叠层。对于陶瓷靶,y可以大于或等于0.08。可以在将陶瓷材料沉积在沉积表面上之前将晶种层施加到该沉积表面上。晶种层可以包括(111)晶体取向。可以在施加晶种层之前将粘合层施加在沉积表面上。形成压电材料之后,可以将电极施加在压电材料上。
结合附图和以下说明对本发明的一个或多个实施方案的详细内容进行陈述。本发明的其它特征、目的和优点将由说明书和附图,以及由权利要求书变得明显。
附图说明
图1是具有换能器的MEMS主体的横截面视图。
图2是MEMS主体的横截面视图。
图3是具有电极和压电层的MEMS主体的横截面视图。
图4是具有换能器叠层的MEMS主体的横截面视图。
在各个附图中相同的附图标记表示相同的要素。
详述
如上所述,形成装置中的压电层或结构体可以以多种不同的方式完成。然而,一种压电材料形成、特别是PZT型形成的方法是将材料溅射到其所需的位置。用于形成压电材料的溅射方法和靶可以部分地决定压电层的所得特性,例如,D31系数(响应于在层上施加的偏压,该层在垂直于极化轴的横向上收缩或膨胀的大小)或者D33系数(响应于在层上施加的偏压,沿极化轴的厚度或纵向变化的大小)。通过使用靶进行溅射获得的材料的特性可以比通过其它压电材料形成方法实现的那些更好,所述靶包括特定量的铅、锆、氧、钛和掺杂剂材料如铌。此外,该材料溅射到的表面的平面也可以影响压电材料的品质。
参看图1,显示了具有压电换能器的MEMS装置。主体100具有其中有室20的主要部分15。室20通过底层10中的孔口35通向环境。限定室20的一部分的是覆盖主体100的室20和主要部分15的膜25。任选地,膜25包括层30,层30具有与该层30直接邻接于室20的部分不同的材料。在一些实施方案中,主体100主要由硅、二氧化硅或其组合形成,例如,由每种材料的一个或多个层形成。例如,主要部分15可以由硅形成,而底层10可以由硅或硅氧化物形成。膜25可以主要由硅形成,而层30可以由硅或二氧化硅形成。主体100可以通过将多个层粘合在一起如用环氧树脂粘合在一起或通过熔合将多个层结合在一起而形成。
在主体100上在室20的上方形成压电换能器110。压电换能器110包括下电极叠层、上电极叠层和位于下电极叠层和上电极叠层之间的压电层50。
下电极叠层安置在主体100上。在一些实施方案中,下电极叠层包括两个部分:邻接主体100的粘合层40和粘合层40上的晶种层45。下电极叠层的两个层都是导电层。在一些实施方案中,粘合层40的厚度在约50至1000埃之间,例如在约100至500埃之间,尽管可以使用其它厚度。
在一些实施方案中,粘合层由钛、钛钨、铬、镍、钼或其它合适的过渡金属或导电材料形成。如其名称所暗示,粘合层40帮助将晶种层45粘合至膜25。在没有粘合层40的情况下,在采用一些类型的晶种层材料时,晶种层45有从膜25剥离或分层的趋势。
上电极叠层可以包括邻接于压电层50的粘合层80以及粘合层80上的金属层85。粘合层80的厚度可以在约至1微米之间,如在约至之间。在一些实施方案中,粘合层80由导电材料诸如钛、钛钨、铬、镍、镍铬或其它合适的导电金属形成。在一些实施方案中,粘合层80由金属氧化物如氧化铟锡、氧化锌或其它导电氧化物形成。在粘合层80的相对于压电层50的另一侧面上的金属层85的厚度可以在至4微米之间,如在约至2微米之间。金属层可以由导电材料诸如铂、铱、金、铜、铝或其它合适的过渡金属形成。
压电层50由溅射的压电层形成,所述压电层主要为钛酸铅锆铌。在一些实施方案中,压电材料是钙钛矿压电材料。在一些实施方案中,压电材料具有比(111)晶体取向表面更大百分数的(100)晶体取向表面。在一些实施方案中,压电材料具有Pb1.00+x(Zr0.50+/-0.02Ti0.50+/-0.02)1.00-yO3Nby组成,其中-0.01≤x≤0.15并且0<y≤0.15。在一些实施方案中,0≤x≤0.05并且0<y≤0.10。在一些实施方案中,0.10≤y≤0.15。在一些实施方案中,y是约0.12。压电层50可以具有至少0.5微米的厚度,如约1微米或约2微米,或者大于约4微米,例如厚度在约4至6微米之间或者在约6至8微米之间。
叠层的压电层50可以通过在上电极叠层和下电极叠层之间施加电压来激活。激活导致结合的膜和压电层弯曲。AC电压可以引起空腔20的泵送作用。如果在空腔20内存在流体如具有足够低粘度的液体,则该泵送作用迫使该液体从主体100的孔口35离开。
参看图2-4,描述了在MEMS装置上形成换能器的方法。参看图2,提供了其上将要形成换能器的主体100。在美国公开2005-0099467中描述了示例性的MEMS主体。然而,可以提供其它类型的在其上形成换能器的MEMS主体。参看图3,通过例如物理气相沉积(PVD)将粘合层40施加在主体上而形成下电极叠层。然后例如通过PVD施加晶种层45。如果使用铱形成晶种层45,则铱可以形成具有(111)晶体取向的膜表面。
然后施加压电层50。在一些实施方案中,使用旋转RF磁控管PVD设备形成压电层50。该PVD设备可以具有调谐衬底RF阻抗匹配网络,用于控制衬底DC自偏压。合适的PVD设备描述在2009年2月19日提交的美国申请12/389,253,“使用阻抗匹配网络的物理气相沉积”(PhysicalVapor Deposition with Impedance Matching Network)中,所述美国申请通过引用结合在本文中。PVD设备可以使用其中氩气或氧气用于溅射气体的反应性PVD工艺。具有Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby组成的陶瓷PZT靶可以与PVD设备一起使用,其中0≤x≤0.30并且0≤y≤0.2,如0≤x≤0.05并且0≤y≤0.10。在一些实施方案中,靶的铌含量为y=0.1、0.11、0.12或0.13。保持铅的量低于例如1.30,以防止在所得PZT中形成过量的晶界。在一些实施方案中,靶由铅、钛、锆和氧原子组成,并且没有其它原子种类。
形成PZT的示例性方法可以具有下列条件。晶片夹温度在约550℃至750℃之间,如在约650℃至720℃之间。在使用较高沉积温度的情况下可以补偿靶中较高的铅量。Ar/O2压力在约1毫托至15毫托之间,如在约2毫托至10毫托之间,例如,2毫托至6毫托之间。O2/(Ar+O2)的气体比在约0.5%至4%之间,如约2.0%。阴极RF功率在约1000W至5000W之间,如在约2000W至4000W之间,例如约3000W。衬底DC自偏压在约+5V至+150V之间,如在约+20V至+100V之间,例如,在约+40V至+80V之间。在这些条件下1小时的溅射沉积可以产生几微米如至多约4微米厚的压电层。
为了形成压电层,将包括所需沉积表面的晶片引入到PVD设备中,所述沉积表面为诸如金属化的主体,例如具有(111)晶体取向的膜表面的铱层。具有(111)晶体取向的铱膜可以诸如使用氩溅射沉积工艺来沉积。如果晶片具有铱层作为下电极叠层的一部分,则可以使该晶片达到沉积温度,即,达到高于450℃的温度,和沉积压力。可以使具有少量氧的气体,如含有1%氧的气体流过晶片。任选使低氧百分数的含氧气体流动至少30秒,如达几分钟。高温和氧气导致铱表面氧化而形成导电的铱氧化物(IrOx,1≤x≤3)。铱氧化物能够提高致动器装置的击穿电压。导电金属氧化物可以减缓氧从压电材料流失,因为氧原子较不可能从PZT扩散到金属电极中。在将铱层任选氧化后,开始溅射处理以生长压电材料。
参看图4,将包括粘合层65和金属层70的上电极叠层施加在压电层50上。需要时,可以使上电极叠层和下电极叠层形成图案。任选地,可以穿过压电层50进行切割以在衬底上分割多个致动器。
在本文中描述的压电材料是具有高D31系数的压电材料。由于溅射沉积,压电材料非常均匀,并且可以由铅、锆、氧、钛和铌的原子组成,而没有粘结剂或其它沉积工艺留下的其它残留的材料。所形成的压电层,例如通过使用本文中描述的晶种层以及PVD设备的工艺条件形成的压电层,可以具有高百分数的钙钛矿(100)晶体取向。铌是促进钙钛矿结构的掺杂剂。具有上述铌量的溅射靶可以产生PZT膜,所述PZT膜具有在约1000至约1600范围内的相对介电常数。
已经描述了本发明的若干实施方案。然而,应当理解的是,在不偏离本发明的精神和范围的情况下可以做出多种更改。例如,尽管描述了PZT用于致动器和FRAM,但是该材料可以用于其它结构。因此,其它实施方案也在后附权利要求的范围内。
Claims (9)
1.一种压电叠层,所述压电叠层包含:
压电材料,所述压电材料包含Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby的主体,其中x>-0.02并且y>0,并且所述压电材料具有比(111)晶体取向表面更大百分数的(100)晶体取向表面,
第一电极,所述第一电极在所述压电材料的第一侧面上;和
第二电极,所述第二电极在所述压电材料的第二侧面上,所述第二电极包括邻接于所述压电材料的晶种层,并且所述晶种层具有(111)晶体取向的膜表面。
2.权利要求1所述的压电叠层,其中所述第一电极包括直接邻接于所述压电材料的导电氧化物。
3.权利要求1所述的压电叠层,其中所述晶种层包括铱。
4.权利要求1所述的压电叠层,其中所述晶种层包括铱氧化物。
5.权利要求1所述的压电叠层,其中所述第一电极包括铂。
6.一种MEMS,所述MEMS包括:
主体,所述主体具有形成于其中的可压缩的室;和
致动器,所述致动器与所述室相邻,其中所述致动器包括权利要求1所述的压电叠层。
7.一种形成压电材料的方法,所述方法包括:
对陶瓷靶施加偏压,其中所述陶瓷靶在室中,并且所述陶瓷靶包含陶瓷主体,所述陶瓷主体具有Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby的组成,其中-0.1≤x≤0.30并且0<y≤0.2;
将在所述室中的载体加热至高于450℃;
将沉积表面支撑在所述载体上;
将晶种层施加在所述沉积表面上,所述晶种层具有(111)晶体取向的膜表面;和
将惰性气体和反应性气体引入到所述室中,以使来自所述陶瓷靶的陶瓷材料沉积到所述沉积表面上的所述晶种层的所述膜表面上,从而形成压电材料,所述压电材料包含Pb1.00+x(Zr0.52Ti0.48)1.00-yO3Nby的主体,其中x>-0.02并且y>0,并且所述压电材料具有比(111)晶体取向表面更大百分数的(100)晶体取向表面。
8.权利要求7所述的方法,所述方法还包括在施加所述晶种层之前在所述沉积表面上施加粘合层。
9.权利要求7所述的方法,所述方法还包括在形成所述压电材料以后,在所述压电材料上施加电极。
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