CN104078560B - 压电体薄膜层叠基板 - Google Patents
压电体薄膜层叠基板 Download PDFInfo
- Publication number
- CN104078560B CN104078560B CN201410048610.9A CN201410048610A CN104078560B CN 104078560 B CN104078560 B CN 104078560B CN 201410048610 A CN201410048610 A CN 201410048610A CN 104078560 B CN104078560 B CN 104078560B
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- substrate
- piezoelectric film
- multilayer board
- piezoelectric
- close binder
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- 239000000758 substrate Substances 0.000 claims abstract description 121
- 239000011230 binding agent Substances 0.000 claims abstract description 82
- 230000003746 surface roughness Effects 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000011734 sodium Substances 0.000 claims abstract description 12
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 5
- OBTSLRFPKIKXSZ-UHFFFAOYSA-N lithium potassium Chemical compound [Li].[K] OBTSLRFPKIKXSZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 198
- 239000010936 titanium Substances 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052712 strontium Inorganic materials 0.000 claims description 6
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 112
- 238000000034 method Methods 0.000 description 27
- 238000011160 research Methods 0.000 description 22
- 239000002585 base Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 11
- 238000007254 oxidation reaction Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical group 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910017488 Cu K Inorganic materials 0.000 description 1
- 229910017541 Cu-K Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- -1 alkali metal niobium oxide Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-061208 | 2013-03-25 | ||
JP2013061208A JP6091281B2 (ja) | 2013-03-25 | 2013-03-25 | 圧電体薄膜積層基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104078560A CN104078560A (zh) | 2014-10-01 |
CN104078560B true CN104078560B (zh) | 2017-12-01 |
Family
ID=51568671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410048610.9A Active CN104078560B (zh) | 2013-03-25 | 2014-02-11 | 压电体薄膜层叠基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9299911B2 (zh) |
JP (1) | JP6091281B2 (zh) |
CN (1) | CN104078560B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103594772A (zh) * | 2013-11-25 | 2014-02-19 | 天津大学 | 一种图形化氧化物介质薄膜的方法 |
JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
JP6179669B2 (ja) * | 2014-05-19 | 2017-08-16 | 株式会社村田製作所 | 圧電薄膜及び圧電薄膜素子 |
WO2019059050A1 (ja) * | 2017-09-22 | 2019-03-28 | Tdk株式会社 | 圧電薄膜素子 |
JP2019216203A (ja) * | 2018-06-14 | 2019-12-19 | 太陽誘電株式会社 | 圧電素子,振動波形センサー,及び振動波形センサーモジュール |
JP7315424B2 (ja) * | 2018-09-28 | 2023-07-26 | 日東電工株式会社 | 圧電デバイス、及び圧電デバイスの製造方法 |
JP7298159B2 (ja) * | 2019-01-11 | 2023-06-27 | Tdk株式会社 | 圧電薄膜、圧電薄膜素子、圧電アクチュエータ、圧電センサ、ヘッドアセンブリ、ヘッドスタックアセンブリ、ハードディスクドライブ、プリンタヘッド、及びインクジェットプリンタ装置 |
JP7325981B2 (ja) * | 2019-03-20 | 2023-08-15 | 日東電工株式会社 | 積層体、これを用いた圧電デバイス、及び圧電デバイスの製造方法 |
JP7290435B2 (ja) * | 2019-03-20 | 2023-06-13 | 日東電工株式会社 | 圧電デバイス、及び圧電デバイスの製造方法 |
CN111510093B (zh) * | 2020-04-27 | 2023-10-03 | 济南晶正电子科技有限公司 | 一种用于制作体声波器件的压电薄膜体及其制备方法 |
CN112062553B (zh) * | 2020-09-17 | 2022-09-06 | 广西大学 | 一种超宽温区负电卡效应Pb(ZrxTi1-x)O3基薄膜的制备方法 |
CN114702305B (zh) * | 2022-03-25 | 2023-07-21 | 佛山(华南)新材料研究院 | 一种可杀菌自清洁的射频美容仪用透明陶瓷及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000285626A (ja) * | 1999-03-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 圧電薄膜、圧電素子及びそれらを用いたアクチュエータ機構と情報記録再生装置 |
JP2007019302A (ja) * | 2005-07-08 | 2007-01-25 | Hitachi Cable Ltd | 圧電薄膜素子及びそれを用いたアクチュエータ並びにセンサ |
CN102077376A (zh) * | 2008-06-27 | 2011-05-25 | 松下电器产业株式会社 | 压电体元件和其制造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005168172A (ja) * | 2003-12-02 | 2005-06-23 | Seiko Epson Corp | 圧電アクチュエータ及びこれを用いた液体噴射ヘッド並びに液体噴射装置 |
JP2005244092A (ja) * | 2004-02-27 | 2005-09-08 | Kyocera Corp | 積層圧電体および積層圧電体の製造方法 |
JP5044902B2 (ja) * | 2005-08-01 | 2012-10-10 | 日立電線株式会社 | 圧電薄膜素子 |
JP2007076009A (ja) * | 2005-09-09 | 2007-03-29 | Sharp Corp | インクジェットヘッド本体およびそれを備えるインクジェットヘッド、ならびにヘッド部とノズルプレートとの接合方法および該方法を用いるインクジェットヘッドの製造方法 |
US20070236404A1 (en) * | 2006-04-05 | 2007-10-11 | Snider Chris R | Integrated GPS antenna ground plane and telematics module |
US7874648B2 (en) * | 2006-07-14 | 2011-01-25 | Canon Kabushiki Kaisha | Manufacturing method for piezoelectric body, piezoelectric element, and liquid discharge head |
JP2010135669A (ja) * | 2008-12-08 | 2010-06-17 | Hitachi Cable Ltd | 薄膜圧電体付き基板、薄膜圧電体素子、薄膜圧電体デバイスおよび薄膜圧電体付き基板の製造方法 |
JP2010161330A (ja) * | 2008-12-08 | 2010-07-22 | Hitachi Cable Ltd | 圧電薄膜素子 |
JP5531653B2 (ja) * | 2010-02-02 | 2014-06-25 | 日立金属株式会社 | 圧電薄膜素子、その製造方法及び圧電薄膜デバイス |
JP2012174955A (ja) * | 2011-02-23 | 2012-09-10 | Stanley Electric Co Ltd | 圧電アクチュエータ及びその製造方法 |
EP2717344B1 (en) * | 2011-05-23 | 2015-09-16 | Konica Minolta, Inc. | Lower electrode for piezoelectric element, and piezoelectric element provided with lower electrode |
JP2013004707A (ja) * | 2011-06-16 | 2013-01-07 | Hitachi Cable Ltd | 圧電膜素子及び圧電膜デバイス |
-
2013
- 2013-03-25 JP JP2013061208A patent/JP6091281B2/ja active Active
-
2014
- 2014-02-11 CN CN201410048610.9A patent/CN104078560B/zh active Active
- 2014-03-24 US US14/223,916 patent/US9299911B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000285626A (ja) * | 1999-03-29 | 2000-10-13 | Matsushita Electric Ind Co Ltd | 圧電薄膜、圧電素子及びそれらを用いたアクチュエータ機構と情報記録再生装置 |
JP2007019302A (ja) * | 2005-07-08 | 2007-01-25 | Hitachi Cable Ltd | 圧電薄膜素子及びそれを用いたアクチュエータ並びにセンサ |
CN102077376A (zh) * | 2008-06-27 | 2011-05-25 | 松下电器产业株式会社 | 压电体元件和其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6091281B2 (ja) | 2017-03-08 |
US9299911B2 (en) | 2016-03-29 |
US20140285069A1 (en) | 2014-09-25 |
CN104078560A (zh) | 2014-10-01 |
JP2014187219A (ja) | 2014-10-02 |
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