JP2012515451A - ガス導入開口を備えた基板支持体 - Google Patents

ガス導入開口を備えた基板支持体 Download PDF

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Publication number
JP2012515451A
JP2012515451A JP2011546321A JP2011546321A JP2012515451A JP 2012515451 A JP2012515451 A JP 2012515451A JP 2011546321 A JP2011546321 A JP 2011546321A JP 2011546321 A JP2011546321 A JP 2011546321A JP 2012515451 A JP2012515451 A JP 2012515451A
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JP
Japan
Prior art keywords
substrate
substrate support
gas
support
lift pins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011546321A
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English (en)
Japanese (ja)
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JP2012515451A5 (enExample
Inventor
サム エイチ． キム，
ジョン エム． ホワイト，
スー ヤン チェ，
カール エー． ソレンセン，
ロビン エル． タイナー，
ビオム スー パーク，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2012515451A publication Critical patent/JP2012515451A/ja
Publication of JP2012515451A5 publication Critical patent/JP2012515451A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2011546321A 2009-01-16 2010-01-14 ガス導入開口を備えた基板支持体 Pending JP2012515451A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14536109P 2009-01-16 2009-01-16
US61/145,361 2009-01-16
US12/686,483 2010-01-13
US12/686,483 US20100184290A1 (en) 2009-01-16 2010-01-13 Substrate support with gas introduction openings
PCT/US2010/020979 WO2010083271A2 (en) 2009-01-16 2010-01-14 Substrate support with gas introduction openings

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015130604A Division JP6215871B2 (ja) 2009-01-16 2015-06-30 ガス導入開口を備えた基板支持体

Publications (2)

Publication Number Publication Date
JP2012515451A true JP2012515451A (ja) 2012-07-05
JP2012515451A5 JP2012515451A5 (enExample) 2013-02-28

Family

ID=42337307

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011546321A Pending JP2012515451A (ja) 2009-01-16 2010-01-14 ガス導入開口を備えた基板支持体
JP2015130604A Expired - Fee Related JP6215871B2 (ja) 2009-01-16 2015-06-30 ガス導入開口を備えた基板支持体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015130604A Expired - Fee Related JP6215871B2 (ja) 2009-01-16 2015-06-30 ガス導入開口を備えた基板支持体

Country Status (6)

Country Link
US (2) US20100184290A1 (enExample)
JP (2) JP2012515451A (enExample)
KR (1) KR20110107849A (enExample)
CN (1) CN102282665B (enExample)
TW (1) TWI473200B (enExample)
WO (1) WO2010083271A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014033045A (ja) * 2012-08-02 2014-02-20 Samco Inc 静電吸着方法及び静電吸着装置
JP2019004086A (ja) * 2017-06-16 2019-01-10 東京エレクトロン株式会社 静電吸着方法
CN113994456A (zh) * 2019-07-17 2022-01-28 应用材料公司 用于曝光后处理的方法及设备

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US9048518B2 (en) * 2011-06-21 2015-06-02 Applied Materials, Inc. Transmission line RF applicator for plasma chamber
US9610591B2 (en) 2013-01-25 2017-04-04 Applied Materials, Inc. Showerhead having a detachable gas distribution plate
CN103693438B (zh) * 2013-12-18 2016-06-01 京东方科技集团股份有限公司 用于基板的支撑装置及其运送基板的方法
CN104617017A (zh) * 2015-01-12 2015-05-13 合肥京东方光电科技有限公司 基板支撑装置及支撑方法、真空干燥设备
US9499908B2 (en) * 2015-02-13 2016-11-22 Eastman Kodak Company Atomic layer deposition apparatus
CN205741208U (zh) * 2015-09-16 2016-11-30 应用材料公司 用于改进的等离子体处理腔室的系统和设备
KR102322767B1 (ko) * 2017-03-10 2021-11-08 삼성디스플레이 주식회사 기판과 스테이지 간의 분리 기구가 개선된 기판 처리 장치 및 그것을 이용한 기판 처리 방법
GB201709446D0 (en) 2017-06-14 2017-07-26 Semblant Ltd Plasma processing apparatus
CN108257908A (zh) * 2017-12-29 2018-07-06 深圳市华星光电半导体显示技术有限公司 升降方法、升降装置及计算机可读存储介质
CN109031715B (zh) * 2018-08-03 2021-07-06 深圳市华星光电半导体显示技术有限公司 一种剥离cvd机台内玻璃基板的方法
KR102285672B1 (ko) * 2019-06-04 2021-08-06 무진전자 주식회사 기판 건조 챔버
KR20210084892A (ko) * 2019-12-30 2021-07-08 (주)에이엔에이치 기판 처리장치의 서셉터 오토 레벨링 장치
CN114256046B (zh) * 2020-09-22 2024-07-05 中微半导体设备(上海)股份有限公司 等离子体处理装置及其工作方法
CN114823263B (zh) * 2021-01-21 2025-09-16 东京毅力科创株式会社 基板处理装置
US20230113486A1 (en) * 2021-10-12 2023-04-13 Applied Materials, Inc. Substrate support assemblies having internal shaft areas with isolated environments that mitigate oxidation
CN117198972A (zh) * 2022-05-30 2023-12-08 江苏鲁汶仪器股份有限公司 一种晶圆升降机构及晶圆载台装置
TWI847387B (zh) * 2022-11-24 2024-07-01 南亞科技股份有限公司 形成半導體結構的方法
TWI879616B (zh) * 2022-11-24 2025-04-01 南亞科技股份有限公司 形成半導體結構的方法

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* Cited by examiner, † Cited by third party
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JP2000299288A (ja) * 1999-04-15 2000-10-24 Tokyo Electron Ltd プラズマ処理装置
JP2001001224A (ja) * 1999-06-16 2001-01-09 Hirata Corp 熱処理装置
JP2002246450A (ja) * 2001-02-20 2002-08-30 Nikon Corp 基板保持装置及び基板搬送方法
JP2003068836A (ja) * 2001-08-27 2003-03-07 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP2004214312A (ja) * 2002-12-27 2004-07-29 Ulvac Japan Ltd 基板処理装置
JP2005085881A (ja) * 2003-09-05 2005-03-31 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2007081212A (ja) * 2005-09-15 2007-03-29 Mitsui Eng & Shipbuild Co Ltd 基板昇降装置
WO2007077765A1 (ja) * 2005-12-28 2007-07-12 Sharp Kabushiki Kaisha ステージ装置及びプラズマ処理装置

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JP3532236B2 (ja) * 1993-12-22 2004-05-31 大日本スクリーン製造株式会社 塗布装置及び塗布方法
US6296712B1 (en) * 1997-12-02 2001-10-02 Applied Materials, Inc. Chemical vapor deposition hardware and process
JP4064557B2 (ja) * 1999-01-07 2008-03-19 松下電器産業株式会社 真空処理装置の基板取り外し制御方法
JP2001035800A (ja) * 1999-07-22 2001-02-09 Hitachi Ltd 半導体のエピタキシャル成長装置および成長方法
JP2002004048A (ja) * 2000-06-20 2002-01-09 Ebara Corp 成膜方法及び装置
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KR100721504B1 (ko) * 2001-08-02 2007-05-23 에이에스엠지니텍코리아 주식회사 플라즈마 강화 원자층 증착 장치 및 이를 이용한 박막형성방법
JP2003282690A (ja) * 2002-03-25 2003-10-03 Toto Ltd 静電チャック
JP2003282691A (ja) * 2002-03-26 2003-10-03 Nec Kyushu Ltd ウェハ保持用静電チャックおよびウェハの剥離方法
KR20040005356A (ko) * 2002-07-10 2004-01-16 주식회사 하이닉스반도체 진공을 이용한 포토마스크 고정용 핸들러
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TWI350394B (en) * 2004-04-16 2011-10-11 Chimei Innolux Corp Apparatus and method for connecting two substrates
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JP2008041761A (ja) * 2006-08-02 2008-02-21 Sekisui Chem Co Ltd 被処理物の処理後剥離方法及び設置装置
KR101312292B1 (ko) * 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
JP4824590B2 (ja) * 2007-01-31 2011-11-30 東京エレクトロン株式会社 基板処理装置
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Publication number Priority date Publication date Assignee Title
JP2000299288A (ja) * 1999-04-15 2000-10-24 Tokyo Electron Ltd プラズマ処理装置
JP2001001224A (ja) * 1999-06-16 2001-01-09 Hirata Corp 熱処理装置
JP2002246450A (ja) * 2001-02-20 2002-08-30 Nikon Corp 基板保持装置及び基板搬送方法
JP2003068836A (ja) * 2001-08-27 2003-03-07 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP2004214312A (ja) * 2002-12-27 2004-07-29 Ulvac Japan Ltd 基板処理装置
JP2005085881A (ja) * 2003-09-05 2005-03-31 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2007081212A (ja) * 2005-09-15 2007-03-29 Mitsui Eng & Shipbuild Co Ltd 基板昇降装置
WO2007077765A1 (ja) * 2005-12-28 2007-07-12 Sharp Kabushiki Kaisha ステージ装置及びプラズマ処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014033045A (ja) * 2012-08-02 2014-02-20 Samco Inc 静電吸着方法及び静電吸着装置
JP2019004086A (ja) * 2017-06-16 2019-01-10 東京エレクトロン株式会社 静電吸着方法
CN113994456A (zh) * 2019-07-17 2022-01-28 应用材料公司 用于曝光后处理的方法及设备
JP2022540650A (ja) * 2019-07-17 2022-09-16 アプライド マテリアルズ インコーポレイテッド 露光後処理のための方法及び装置
JP7498257B2 (ja) 2019-07-17 2024-06-11 アプライド マテリアルズ インコーポレイテッド 露光後処理のための方法及び装置

Also Published As

Publication number Publication date
KR20110107849A (ko) 2011-10-04
US20120149194A1 (en) 2012-06-14
US8853098B2 (en) 2014-10-07
US20100184290A1 (en) 2010-07-22
JP6215871B2 (ja) 2017-10-18
WO2010083271A2 (en) 2010-07-22
CN102282665A (zh) 2011-12-14
CN102282665B (zh) 2014-10-29
WO2010083271A3 (en) 2010-10-21
TWI473200B (zh) 2015-02-11
JP2015216390A (ja) 2015-12-03
TW201037785A (en) 2010-10-16

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