KR20110107849A - 가스 도입 개구들을 구비한 기판 지지부 - Google Patents

가스 도입 개구들을 구비한 기판 지지부 Download PDF

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Publication number
KR20110107849A
KR20110107849A KR1020117018861A KR20117018861A KR20110107849A KR 20110107849 A KR20110107849 A KR 20110107849A KR 1020117018861 A KR1020117018861 A KR 1020117018861A KR 20117018861 A KR20117018861 A KR 20117018861A KR 20110107849 A KR20110107849 A KR 20110107849A
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KR
South Korea
Prior art keywords
substrate
substrate support
gas
support
way
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Ceased
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KR1020117018861A
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English (en)
Korean (ko)
Inventor
삼 에이치. 김
존 엠. 화이트
수 영 최
칼 에이. 소렌센
로빈 엘. 티너
범수 박
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110107849A publication Critical patent/KR20110107849A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020117018861A 2009-01-16 2010-01-14 가스 도입 개구들을 구비한 기판 지지부 Ceased KR20110107849A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14536109P 2009-01-16 2009-01-16
US61/145,361 2009-01-16
US12/686,483 2010-01-13
US12/686,483 US20100184290A1 (en) 2009-01-16 2010-01-13 Substrate support with gas introduction openings

Publications (1)

Publication Number Publication Date
KR20110107849A true KR20110107849A (ko) 2011-10-04

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KR1020117018861A Ceased KR20110107849A (ko) 2009-01-16 2010-01-14 가스 도입 개구들을 구비한 기판 지지부

Country Status (6)

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US (2) US20100184290A1 (enExample)
JP (2) JP2012515451A (enExample)
KR (1) KR20110107849A (enExample)
CN (1) CN102282665B (enExample)
TW (1) TWI473200B (enExample)
WO (1) WO2010083271A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170001183U (ko) * 2015-09-16 2017-03-31 어플라이드 머티어리얼스, 인코포레이티드 개선된 플라즈마 프로세싱 챔버를 위한 시스템들, 장치, 및 방법들
KR20180104240A (ko) * 2017-03-10 2018-09-20 삼성디스플레이 주식회사 기판과 스테이지 간의 분리 기구가 개선된 기판 처리 장치 및 그것을 이용한 기판 처리 방법
KR20200013121A (ko) * 2013-01-25 2020-02-05 어플라이드 머티어리얼스, 인코포레이티드 분리 가능한 가스 분배 플레이트를 갖는 샤워헤드
WO2021137414A1 (ko) * 2019-12-30 2021-07-08 (주)에이엔에이치 기판 처리장치의 서셉터 오토 레벨링 장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048518B2 (en) * 2011-06-21 2015-06-02 Applied Materials, Inc. Transmission line RF applicator for plasma chamber
JP6142305B2 (ja) * 2012-08-02 2017-06-07 サムコ株式会社 静電吸着方法及び静電吸着装置
CN103693438B (zh) * 2013-12-18 2016-06-01 京东方科技集团股份有限公司 用于基板的支撑装置及其运送基板的方法
CN104617017A (zh) * 2015-01-12 2015-05-13 合肥京东方光电科技有限公司 基板支撑装置及支撑方法、真空干燥设备
US9499908B2 (en) * 2015-02-13 2016-11-22 Eastman Kodak Company Atomic layer deposition apparatus
GB201709446D0 (en) 2017-06-14 2017-07-26 Semblant Ltd Plasma processing apparatus
JP6851270B2 (ja) * 2017-06-16 2021-03-31 東京エレクトロン株式会社 静電吸着方法
CN108257908A (zh) * 2017-12-29 2018-07-06 深圳市华星光电半导体显示技术有限公司 升降方法、升降装置及计算机可读存储介质
CN109031715B (zh) * 2018-08-03 2021-07-06 深圳市华星光电半导体显示技术有限公司 一种剥离cvd机台内玻璃基板的方法
KR102285672B1 (ko) * 2019-06-04 2021-08-06 무진전자 주식회사 기판 건조 챔버
KR20220020961A (ko) * 2019-07-17 2022-02-21 어플라이드 머티어리얼스, 인코포레이티드 노출 후 프로세싱을 위한 방법들 및 장치
CN114256046B (zh) * 2020-09-22 2024-07-05 中微半导体设备(上海)股份有限公司 等离子体处理装置及其工作方法
CN114823263B (zh) * 2021-01-21 2025-09-16 东京毅力科创株式会社 基板处理装置
US20230113486A1 (en) * 2021-10-12 2023-04-13 Applied Materials, Inc. Substrate support assemblies having internal shaft areas with isolated environments that mitigate oxidation
CN117198972A (zh) * 2022-05-30 2023-12-08 江苏鲁汶仪器股份有限公司 一种晶圆升降机构及晶圆载台装置
TWI879616B (zh) * 2022-11-24 2025-04-01 南亞科技股份有限公司 形成半導體結構的方法
TWI847387B (zh) * 2022-11-24 2024-07-01 南亞科技股份有限公司 形成半導體結構的方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5380566A (en) * 1993-06-21 1995-01-10 Applied Materials, Inc. Method of limiting sticking of body to susceptor in a deposition treatment
JP3532236B2 (ja) * 1993-12-22 2004-05-31 大日本スクリーン製造株式会社 塗布装置及び塗布方法
US6296712B1 (en) * 1997-12-02 2001-10-02 Applied Materials, Inc. Chemical vapor deposition hardware and process
JP4064557B2 (ja) * 1999-01-07 2008-03-19 松下電器産業株式会社 真空処理装置の基板取り外し制御方法
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
JP4418051B2 (ja) * 1999-06-16 2010-02-17 平田機工株式会社 熱処理装置
JP2001035800A (ja) * 1999-07-22 2001-02-09 Hitachi Ltd 半導体のエピタキシャル成長装置および成長方法
JP2002004048A (ja) * 2000-06-20 2002-01-09 Ebara Corp 成膜方法及び装置
EP1174910A3 (en) * 2000-07-20 2010-01-06 Applied Materials, Inc. Method and apparatus for dechucking a substrate
JP2002246450A (ja) * 2001-02-20 2002-08-30 Nikon Corp 基板保持装置及び基板搬送方法
KR100721504B1 (ko) * 2001-08-02 2007-05-23 에이에스엠지니텍코리아 주식회사 플라즈마 강화 원자층 증착 장치 및 이를 이용한 박막형성방법
JP2003068836A (ja) * 2001-08-27 2003-03-07 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP2003282690A (ja) * 2002-03-25 2003-10-03 Toto Ltd 静電チャック
JP2003282691A (ja) * 2002-03-26 2003-10-03 Nec Kyushu Ltd ウェハ保持用静電チャックおよびウェハの剥離方法
KR20040005356A (ko) * 2002-07-10 2004-01-16 주식회사 하이닉스반도체 진공을 이용한 포토마스크 고정용 핸들러
JP4153296B2 (ja) * 2002-12-27 2008-09-24 株式会社アルバック 基板処理装置
JP4080401B2 (ja) * 2003-09-05 2008-04-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
US20050160992A1 (en) * 2004-01-28 2005-07-28 Applied Materials, Inc. Substrate gripping apparatus
US7358192B2 (en) * 2004-04-08 2008-04-15 Applied Materials, Inc. Method and apparatus for in-situ film stack processing
TWI350394B (en) * 2004-04-16 2011-10-11 Chimei Innolux Corp Apparatus and method for connecting two substrates
US20060005770A1 (en) * 2004-07-09 2006-01-12 Robin Tiner Independently moving substrate supports
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
TWI287279B (en) * 2004-09-20 2007-09-21 Applied Materials Inc Diffuser gravity support
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
JP4583905B2 (ja) * 2004-12-17 2010-11-17 筑波精工株式会社 アライメント装置及びそれを用いたアライメント方法
US7435454B2 (en) * 2005-03-21 2008-10-14 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
JP2007081212A (ja) * 2005-09-15 2007-03-29 Mitsui Eng & Shipbuild Co Ltd 基板昇降装置
US20100212832A1 (en) * 2005-12-28 2010-08-26 Sharp Kabushiki Kaisha Stage device and plasma treatment apparatus
KR101141025B1 (ko) * 2006-02-07 2012-05-04 주성엔지니어링(주) 리프트 핀 구동장치
JP2008041761A (ja) * 2006-08-02 2008-02-21 Sekisui Chem Co Ltd 被処理物の処理後剥離方法及び設置装置
KR101312292B1 (ko) * 2006-12-11 2013-09-27 엘아이지에이디피 주식회사 플라즈마 처리장치의 기판 파손 방지장치 및 그 방법
JP4824590B2 (ja) * 2007-01-31 2011-11-30 東京エレクトロン株式会社 基板処理装置
US7782591B2 (en) * 2007-06-22 2010-08-24 Lam Research Corporation Methods of and apparatus for reducing amounts of particles on a wafer during wafer de-chucking
US8030212B2 (en) * 2007-09-26 2011-10-04 Eastman Kodak Company Process for selective area deposition of inorganic materials

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200013121A (ko) * 2013-01-25 2020-02-05 어플라이드 머티어리얼스, 인코포레이티드 분리 가능한 가스 분배 플레이트를 갖는 샤워헤드
KR20170001183U (ko) * 2015-09-16 2017-03-31 어플라이드 머티어리얼스, 인코포레이티드 개선된 플라즈마 프로세싱 챔버를 위한 시스템들, 장치, 및 방법들
KR20180104240A (ko) * 2017-03-10 2018-09-20 삼성디스플레이 주식회사 기판과 스테이지 간의 분리 기구가 개선된 기판 처리 장치 및 그것을 이용한 기판 처리 방법
WO2021137414A1 (ko) * 2019-12-30 2021-07-08 (주)에이엔에이치 기판 처리장치의 서셉터 오토 레벨링 장치

Also Published As

Publication number Publication date
US20120149194A1 (en) 2012-06-14
US20100184290A1 (en) 2010-07-22
WO2010083271A3 (en) 2010-10-21
US8853098B2 (en) 2014-10-07
TWI473200B (zh) 2015-02-11
WO2010083271A2 (en) 2010-07-22
CN102282665B (zh) 2014-10-29
TW201037785A (en) 2010-10-16
JP2015216390A (ja) 2015-12-03
JP2012515451A (ja) 2012-07-05
CN102282665A (zh) 2011-12-14
JP6215871B2 (ja) 2017-10-18

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