JP2012222342A - 極限環境で使用するための酸化マンガンコンデンサ - Google Patents
極限環境で使用するための酸化マンガンコンデンサ Download PDFInfo
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- JP2012222342A JP2012222342A JP2012048536A JP2012048536A JP2012222342A JP 2012222342 A JP2012222342 A JP 2012222342A JP 2012048536 A JP2012048536 A JP 2012048536A JP 2012048536 A JP2012048536 A JP 2012048536A JP 2012222342 A JP2012222342 A JP 2012222342A
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- Prior art keywords
- anode
- capacitor
- capacitor assembly
- housing
- capacitor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000003990 capacitor Substances 0.000 title claims abstract description 145
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 title claims abstract description 50
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 24
- 239000012298 atmosphere Substances 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 17
- 239000000243 solution Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000002243 precursor Substances 0.000 claims description 20
- 239000002270 dispersing agent Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical group [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 229920003023 plastic Polymers 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract description 10
- 206010067484 Adverse reaction Diseases 0.000 abstract description 2
- 230000006838 adverse reaction Effects 0.000 abstract description 2
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 10
- 230000001070 adhesive effect Effects 0.000 description 10
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- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 8
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- 239000011347 resin Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
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- 239000000463 material Substances 0.000 description 6
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- 239000010955 niobium Substances 0.000 description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 5
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000833 kovar Inorganic materials 0.000 description 4
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- 238000000465 moulding Methods 0.000 description 4
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 description 4
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- 150000003839 salts Chemical class 0.000 description 4
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 238000007598 dipping method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 125000003396 thiol group Chemical class [H]S* 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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- 229910019142 PO4 Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
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- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
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- 125000000217 alkyl group Chemical group 0.000 description 2
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- 150000001412 amines Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
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- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
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- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
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- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
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- PADOFXALCIVUFS-UHFFFAOYSA-N tris(2,3-dimethoxyphenyl)phosphane Chemical compound COC1=CC=CC(P(C=2C(=C(OC)C=CC=2)OC)C=2C(=C(OC)C=CC=2)OC)=C1OC PADOFXALCIVUFS-UHFFFAOYSA-N 0.000 description 1
- 239000002383 tung oil Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 1
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 1
- 239000012178 vegetable wax Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
【解決手段】コンデンサアセンブリは、酸化マンガン固体電解質で被覆された陽極酸化した多孔質の焼結体を含有するコンデンサ素子を含む。このコンデンサアセンブリを(約35ボルトを超えるような)高電圧及び(約175℃を超えるような)高温用途で容易に使用できるようにするために、不活性ガスを含む気体雰囲気中でコンデンサ素子をハウジング内に封入して密封する。ハウジング及び不活性ガス雰囲気は、二酸化マンガンに供給される水分量を制限できると考えられる。このようにして、固体電解質が極限状態で有害反応を受ける可能性が低くなり、従ってコンデンサアセンブリの熱安定性が高まる。コンデンサアセンブリは、高電圧及び高温のいずれの環境でも十分に機能することに加え、高い容積効率を示すこともできる。
【選択図】なし
Description
A.陽極
高電圧用途では、多くの場合、コンデンサ素子の陽極は、1グラム当たり約70,000マイクロファラド*ボルト(「μF*V/g」)未満、実施形態によっては約2,000μF*V/g〜約65,000μF*V/g、及び実施形態によっては約5,000μF*V/g〜約50,000μF*V/gなどの比較的比電荷の低い粉末から形成されることが望ましい。当然ながら、低比電荷の粉末が望ましいこともあり得るが、これは決して必須条件ではない。すなわち、この粉末は、1グラム当たり約70,000マイクロファラド*ボルト(「μF*V/g」)又はそれ以上、実施形態によっては約80,000μF*V/g又はそれ以上、実施形態によっては約90,000μF*V/g又はそれ以上、実施形態によっては約100,000μF*V/g又はそれ以上、及び実施形態によっては約120,000μF*V/g〜約250,000μF*V/gの比較的高い比電荷を有することもできる。
上述したように、コンデンサ素子は、固体電解質として(MnO2などの)酸化マンガンも含む。酸化マンガンは、Sturmer他に付与された米国特許第4,945,452号に記載されるような(硝酸マンガン(Mn(NO3)2)などの)前駆体の熱分解を通じて形成することができ、該特許はあらゆる目的によるこの特許への参照によりその全体が本明細書に組み入れられる。例えば、誘電体被覆した陽極体を、前駆体を含む溶液に接触(例えば、浸漬、含浸、噴霧)させ、その後加熱して酸化物に変換することができる。必要であれば、複数の付加ステップを使用して所望の厚みを達成することができる。1つの実施形態では、例えば、陽極体を酸化マンガン前駆体の第1の溶液中に浸漬して加熱し、その後酸化マンガン前駆体の第2の溶液中に浸漬して加熱する。所望の厚みに達するまでこの処理を繰り返すことができる。
この構造中、R1は、1〜6個の炭素原子を有するアルキル基であり、
R2は、スルホネート、ホスホネート、カルボキシレート、チオール、スルホネートエステル、ホスファイト、ホスホナイト、ホスフィナイト、ホスホフェート、サルフェート、ホスフェートエステル、スルホキサイド、スルホン、アミノ、その他、及びこれらの組み合わせなどの親水性部分であり、
mは、0〜8、実施形態によっては0〜4、及び実施形態によっては0であり、
pは、1〜8、実施形態によっては1〜4、及び実施形態によっては1であり、
nは、1〜100、及び実施形態によっては2〜30である。なお、R1基及びR2基は、環系の1又はそれ以上の炭素原子に結合することができる。また、必要であれば、化合物が、カチオンが(ナトリウム、カリウム、アンモニウムなどの)アルカリ金属、(カルシウムなどの)アルカリ金属、アンモニア(NH4 +)などである塩の形をとることができる。ベンゼン核を有する同等の化合物を使用することもできる。
この構造中、R2はSO3であり、
pは1〜8の整数であり、
nは1〜100であり、
Mはナトリウム、カリウム、又はカルシウムである。
特に適した縮合ナフタレンスルホネートのナトリウム、カリウム、又はカルシウム塩が、Geo Specialty Chemicals社から商品名「DAXAD」で市販されている。
必要であれば、コンデンサは、当業で公知のように他の層を含むこともできる。例えば、誘電体と固体電解質との間に、比較的絶縁性の高い樹脂性材料(天然又は合成)で作製したような保護被覆を任意に形成することができる。このような材料は、約10Ω/cmを越える、実施形態によっては約100を越える特異的な抵抗率を有し、実施形態によっては約1000Ω/cmを越える、実施形態によっては約1×105Ω/cmを越える、及び実施形態によっては約1×1010Ω/cmを越える特異的な抵抗率を有することができる。本発明で利用できるいくつかの樹脂性材料としては、以下に限定されるわけではないが、ポリウレタン、ポリスチレン、(グリセライドなどの)不飽和又は飽和脂肪酸のエステルなどが挙げられる。例えば、好適な脂肪酸のエステルとして、以下に限定されるわけではないが、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、エレオステアリン酸、オレイン酸、リノール酸、リノレン酸、アレウリチン酸、シェロール酸などのエステルが挙げられる。これらの脂肪酸のエステルは、結果として生じる被膜を安定層に迅速に重合できるようにする「乾性油」を形成するために比較的複雑な組み合わせで使用する場合、特に有用であることが判明している。このような乾性油として、モノグリセリド、ジグリセリド、及び/又はトリグリセリドを挙げることができ、これらはそれぞれ1つ、2つ、及び3つのエステル化された脂肪酸アシル残基を含むグリセロール骨格を有する。例えば、使用できるいくつかの好適な乾性油として、以下に限定されるわけではないが、オリーブ油、アマニ油、ヒマシ油、キリ油、大豆油、及びシェラックが挙げられる。これらの及びその他の保護被覆材料は、Fife他に付与された米国特許第6,674,635号にさらに詳細に記載されており、該特許はあらゆる目的によるこの特許への参照によりその全体が本明細書に組み入れられる。
上述したように、コンデンサ素子は、ハウジング内に密封される。通常、密封は、使用中に固体電解質が酸化しないようにするために、少なくとも1つの不活性ガスを含む気体雰囲気中で行われる。不活性ガスとして、例えば、窒素、ヘリウム、アルゴン、キセノン、ネオン、クリプトン、ラドンなど、並びにこれらの混合物を挙げることができる。通常、不活性ガスは、約50重量%〜約100重量%、実施形態によっては約75重量%〜約100重量%、及び実施形態によっては約90重量%〜約99重量%などのように、ハウジング内の雰囲気の大部分を構成する。必要であれば、比較的少量の、二酸化炭素、酸素、水蒸気などの非不活性ガスを使用することもできる。しかしながら、このような場合、通常、非不活性ガスは、ハウジング内の雰囲気の15重量%又はそれ以下、実施形態によっては10重量%又はそれ以下、実施形態によっては約5重量%又はそれ以下、実施形態によっては約1重量%又はそれ以下、及び実施形態によっては約0.01重量%〜約1重量%を構成する。例えば、(相対湿度によって示される)水分含量は、約10%又はそれ以下、実施形態によっては約5%又はそれ以下、実施形態によっては約1%又はそれ以下、及び実施形態によっては約0.01〜約5%であることができる。
乾燥対湿潤静電容量=(1−([湿潤−乾燥]/湿潤))×100
等価直列抵抗(ESR)
Kelvinリードを付したKeithley3330Precision LCZメータを使用して2.2ボルトのDCバイアス及び0.5ボルトのピーク間正弦波信号で等価直列抵抗を測定することができる。動作周波数は100kHzであり、温度は23℃±2℃であった。
Kelvinリードを付したKeithley3330Precision LCZメータを使用して2.2ボルトDCバイアス及び0.5ボルトのピーク間正弦波信号で静電容量を測定した。動作周波数は120Hzであり、温度は23℃±2℃であった。
最低でも60秒後に、25℃の温度及び定格電圧で漏れ電流を測定する漏れ試験セットを使用して漏れ電流(「DCL」)を測定した。
Claims (18)
- 陽極酸化した焼結多孔質体から形成された陽極と、該陽極を被覆する固体電解質とを含むコンデンサ素子と、
前記コンデンサ素子が中に配置される内部キャビティを定めるハウジングと、
前記陽極体に電気的に接続された陽極終端と、
前記固体電解質に電気的に接続された陰極終端と、
を備え、前記固体電解質が酸化マンガンを含み、前記内部キャビティが、不活性ガスを含む気体雰囲気を有する、
ことを特徴とするコンデンサアセンブリ。 - 前記多孔質体が、タンタル又は酸化ニオブ粉末から形成される、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記粉末が、約70,000μF*V/g未満の比電荷を有する、
ことを特徴とする請求項2に記載のコンデンサアセンブリ。 - 前記酸化マンガンが、誘電体の少なくとも一部を実質的に均一に被覆する膜状である、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記コンデンサ素子が、前記内部キャビティの約30容量パーセント又はそれ以上を占める、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記気体雰囲気の約50重量パーセント〜100重量パーセントを不活性ガスが構成する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記ハウジングが、金属、プラスチック、セラミック、又はこれらの組み合わせから形成される、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記陽極の前記多孔質体から横方向に延びるリードをさらに備え、前記リードが、前記ハウジングの前記内部キャビティ内に位置する、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 前記陽極リードの前記横方向に対して概ね垂直に位置して前記陽極リードに接続された第1の部分を含む接続部材をさらに備える、
ことを特徴とする請求項8に記載のコンデンサアセンブリ。 - 前記接続部材が、前記陽極リードが延びる前記横方向に対して概ね平行な第2の部分をさらに含む、
ことを特徴とする請求項9に記載のコンデンサアセンブリ。 - 前記第2の部分が、前記ハウジング内に位置する、
ことを特徴とする請求項10に記載のコンデンサアセンブリ。 - コンデンサアセンブリの形成方法であって、
酸化マンガンを含む固体電解質で被覆された陽極酸化した焼結陽極体を含むコンデンサ素子をハウジングの内部キャビティ内に配置するステップと、
前記コンデンサ素子の前記陽極体を陽極終端に電気的に接続し、前記コンデンサ素子の前記固体電解質を陰極終端に電気的に接続するステップと、
不活性ガスを含む気体雰囲気中で、前記コンデンサ素子を前記ハウジング内に密封するステップと、
を含むことを特徴とする方法。 - 前記コンデンサ素子が、焼結陽極体を陽極酸化して誘電体被覆を形成し、前記誘電体被覆された陽極体を酸化マンガン前駆体溶液に接触させ、前記前駆体を酸化マンガン固体電解質に熱分解変換することにより形成される、
ことを特徴とする請求項12に記載の方法。 - 前記酸化マンガン前駆体が硝酸マンガンである、
ことを特徴とする請求項13に記載の方法。 - 前記前駆体溶液が分散剤を含む、
ことを特徴とする請求項14に記載の方法。 - (20℃の)水の表面張力の、(1重量パーセントの水中濃度で20℃の)分散剤の表面張力に対する比率が、約0.5〜約2.0である、
ことを特徴とする請求項15に記載の方法。 - 前記溶液が水溶液である、
ことを特徴とする請求項12に記載の方法。 - 前記前駆体が、約150℃〜約300℃の温度で酸化物に熱分解変換される、
ことを特徴とする請求項12に記載の方法。
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- 2012-04-04 DE DE102012205529A patent/DE102012205529A1/de active Pending
- 2012-04-05 CN CN201810146384.6A patent/CN108198690B/zh active Active
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JP2019519104A (ja) * | 2016-05-20 | 2019-07-04 | エイブイエックス コーポレイション | 高温で使用される固体電解キャパシタ |
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JPWO2018131691A1 (ja) * | 2017-01-13 | 2019-11-07 | パナソニックIpマネジメント株式会社 | 電解コンデンサ |
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JP7113285B2 (ja) | 2017-01-13 | 2022-08-05 | パナソニックIpマネジメント株式会社 | 電解コンデンサ |
Also Published As
Publication number | Publication date |
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GB201204438D0 (en) | 2012-04-25 |
FR2973929A1 (fr) | 2012-10-12 |
JP6184661B2 (ja) | 2017-08-23 |
KR20120115172A (ko) | 2012-10-17 |
JP2016165018A (ja) | 2016-09-08 |
DE102012205529A1 (de) | 2012-10-11 |
GB2489786B (en) | 2015-04-15 |
GB2489786A (en) | 2012-10-10 |
US9508492B2 (en) | 2016-11-29 |
KR101929254B1 (ko) | 2019-03-12 |
US20150179349A1 (en) | 2015-06-25 |
CN108198690B (zh) | 2020-06-26 |
CN102737858A (zh) | 2012-10-17 |
US20170084398A1 (en) | 2017-03-23 |
US10014120B2 (en) | 2018-07-03 |
US20120257329A1 (en) | 2012-10-11 |
CN108198690A (zh) | 2018-06-22 |
HK1254372A1 (zh) | 2019-07-19 |
US8947857B2 (en) | 2015-02-03 |
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