JP2009253278A - 密封されたコンデンサアセンブリ - Google Patents
密封されたコンデンサアセンブリ Download PDFInfo
- Publication number
- JP2009253278A JP2009253278A JP2009059683A JP2009059683A JP2009253278A JP 2009253278 A JP2009253278 A JP 2009253278A JP 2009059683 A JP2009059683 A JP 2009059683A JP 2009059683 A JP2009059683 A JP 2009059683A JP 2009253278 A JP2009253278 A JP 2009253278A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor assembly
- anode
- capacitor
- cathode
- weight percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000003990 capacitor Substances 0.000 title claims abstract description 86
- 239000000919 ceramic Substances 0.000 claims abstract description 43
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 34
- 239000011261 inert gas Substances 0.000 claims abstract description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 14
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 13
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
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- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
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- 229910052724 xenon Inorganic materials 0.000 claims description 3
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000000314 lubricant Substances 0.000 description 5
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- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 239000004020 conductor Substances 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000008040 ionic compounds Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 235000019198 oils Nutrition 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 230000003442 weekly effect Effects 0.000 description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
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- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
【解決手段】不活性ガスの存在下でセラミックハウジング内に封入されて密封された導電性ポリマー電解コンデンサを含むコンデンサアセンブリを提供する。理論によって束縛されることを意図しないが、本発明者は、セラミックハウジングが、コンデンサの導電性ポリマーに供給された酸素及び水分の量を制限することができると考えている。このようにして、導電性ポリマーは、高温環境で酸化する可能性が少なく、従って、コンデンサアセンブリの熱安定性を増大させる。
【選択図】図1
Description
本発明の他の特徴及び態様を以下により詳細に示す。
当業者に向けられた本発明のその最良のモードを含む完全かつ権限を付与する開示は、添付の図を参照する本明細書の残りの部分でより詳細に示される。
本明細書及び図面の参照文字の反復使用は、本発明の同じか又は類似の特徴又は要素を表すことを意図している。
一般的には、本発明は、不活性ガスの存在下でセラミックハウジング内に封入され、かつ密封された導電性ポリマー電解コンデンサを含むコンデンサアセンブリに関する。理論によって束縛されることを意図しないが、本発明者は、セラミックハウジングが、コンデンサの導電性ポリマーに供給された酸素及び水分の量を制限することができると考えている。このようにして、導電性ポリマーは、高温環境で酸化する可能性が少なく、従って、コンデンサアセンブリの熱安定性を増大させる。
本発明は、以下の実施例を参照することによって一層良く理解することができる。
等価直列抵抗(ESR)及びキャパシタンス:
等価直列抵抗及びキャパシタンスは、2ボルトバイアス及びAC信号を用いる「Agilent 4284A LCR」メータを用いて測定された。作動周波数は、120Hzであった。
漏れ電流:
漏れ電流(DCL)は、英国所在の「Mantracourt Electronics LTD」製の「MC 190 Leakage」試験セットを用いて測定された。「MC 190」試験は、30秒後の10ボルトの定格電圧での漏れ電流を測定した。
タンタルコンデンサが、セラミック容器内に置くことなく、実施例1で説明したように試験された。結果を導電性ポリマーの急速劣化を示す図14−16に示している。
80 アノードリード
82 カソード
100 コンデンサアセンブリ
120 セラミックハウジング
Claims (29)
- アノードと、該アノードの上に重なる誘電体層と、該誘電体層の上に重なり、導電性ポリマーを有するカソードとを含む電解コンデンサと、
不活性ガスを含有する気体雰囲気を有する内部空洞を形成し、前記電解コンデンサが内部に封入されて密封されたセラミックハウジングと、
前記カソードと電気的に接続し、前記セラミックハウジングの外部に位置するカソード端子と、
前記アノードと電気的に接続し、前記セラミックハウジングの外部に位置するアノード端子と、
を含むことを特徴とするコンデンサアセンブリ。 - 前記アノードは、バルブ金属組成物から形成されることを特徴とする請求項1に記載のコンデンサアセンブリ。
- 前記バルブ金属組成物は、タンタルを含むことを特徴とする請求項2に記載のコンデンサアセンブリ。
- 前記バルブ金属組成物は、酸化ニオビウムを含むことを特徴とする請求項2に記載のコンデンサアセンブリ。
- アノードリードが、前記アノードから延びて、前記アノード端子に電気的に接続されていることを特徴とする請求項1に記載のコンデンサアセンブリ。
- 前記導電性ポリマーは、ポリ(3、4−エチレンジオキシチオフェン)又はその誘導体を含むことを特徴とする請求項1に記載のコンデンサアセンブリ。
- 前記不活性ガスは、窒素、ヘリウム、アルゴン、キセノン、ネオン、クリプトン、ラドン、又はこれらの組合せを含むことを特徴とする請求項1に記載のコンデンサアセンブリ。
- 不活性ガスが、前記気体雰囲気の約50重量パーセントから100重量パーセントを構成することを特徴とする請求項1に記載のコンデンサアセンブリ。
- 不活性ガスが、前記気体雰囲気の約75重量パーセントから100重量パーセントを構成することを特徴とする請求項1に記載のコンデンサアセンブリ。
- 酸素が、前記気体雰囲気の約1重量パーセント未満を構成することを特徴とする請求項1に記載のコンデンサアセンブリ。
- 第1の導電トレース及び第2の導電トレースが、前記セラミックハウジングの内面上に形成され、かつ前記アノード端子及びカソード端子とそれぞれ電気的に接触しており、
前記アノードは、前記第1の導電トレースと電気的に接触し、前記カソードは、前記第2の導電トレースと電気的に接触している、
ことを特徴とする請求項1に記載のコンデンサアセンブリ。 - 導電接着剤が、前記第1の導電トレースを前記アノードに電気的に接続することを特徴とする請求項11に記載のコンデンサアセンブリ。
- 導電接着剤が、前記第2の導電トレースを前記カソードに電気的に接続することを特徴とする請求項11に記載のコンデンサアセンブリ。
- 前記セラミックハウジングは、反射防止材料を含有する障壁部材を収容することを特徴とする請求項1に記載のコンデンサアセンブリ。
- 120Hzの作動周波数で測定された約50オーム又はそれ未満の1000時間にわたる150℃での経年劣化後に等価直列抵抗を示すことを特徴とする請求項1に記載のコンデンサアセンブリ。
- 120Hzの作動周波数で測定された約0.01から約10オームの1000時間にわたる150℃での経年劣化後に等価直列抵抗を示すことを特徴とする請求項1に記載のコンデンサアセンブリ。
- 120Hzの作動周波数で測定された約50オーム又はそれ未満の700時間にわたる175℃での経年劣化後に等価直列抵抗を示すことを特徴とする請求項1に記載のコンデンサアセンブリ。
- 約0.1μA/μF*V又はそれ未満の1000時間にわたる150℃での経年劣化後に正規化漏れ電流を示すことを特徴とする請求項1に記載のコンデンサアセンブリ。
- 約0.1μA/μF*V又はそれ未満の700時間にわたる175℃での経年劣化後に正規化漏れ電流を示すことを特徴とする請求項1に記載のコンデンサアセンブリ。
- コンデンサアセンブリを形成する方法であって、
アノードリードが延びているアノードと、該アノードの上に重なる誘電体層と、該誘電体層の上に重なり、導電性ポリマーを含有するカソードとを含む電解コンデンサを準備する段階と、
前記電解コンデンサをセラミックハウジング内に位置決めする段階と、
前記カソードをカソード端子に電気的に接続する段階と、
前記アノードリードをアノード端子に電気的に接続する段階と、
蓋を前記セラミックハウジングの上に位置決めする段階と、
不活性ガスを含有する気体雰囲気の存在下で、前記蓋を前記セラミックハウジングに対して密封する段階と、
を含むことを特徴とする方法。 - 前記アノードは、タンタル又は酸化ニオビウムを含むことを特徴とする請求項20に記載の方法。
- 前記導電性ポリマーは、ポリ(3、4−エチレンジオキシチオフェン)又はその誘導体を含むことを特徴とする請求項20に記載の方法。
- 前記不活性ガスは、窒素、ヘリウム、アルゴン、キセノン、ネオン、クリプトン、ラドン、又はこれらの組合せを含むことを特徴とする請求項20に記載の方法。
- 不活性ガスが、前記気体雰囲気の約50重量パーセントから100重量パーセントを構成することを特徴とする請求項20に記載の方法。
- 不活性ガスが、前記気体雰囲気の約75重量パーセントから100重量パーセントを構成することを特徴とする請求項20に記載の方法。
- 第1の導電トレース及び第2の導電トレースが、前記セラミックハウジングの内面上に形成され、かつ前記アノード端子及びカソード端子とそれぞれ電気的に接触しており、
前記アノードリードは、前記第1の導電トレースと電気的に接続し、前記カソードは、前記第2の導電トレースと電気的に接続している、
ことを特徴とする請求項20に記載の方法。 - 導電接着剤が、前記第1の導電トレースを前記アノードリードに電気的に接続することを特徴とする請求項26に記載の方法。
- 導電接着剤が、前記第2の導電トレースを前記カソードに電気的に接続することを特徴とする請求項20に記載の方法。
- 前記蓋は、前記セラミックハウジングに溶接又は半田付けされることを特徴とする請求項20に記載の方法。
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JP2016165018A (ja) * | 2011-04-07 | 2016-09-08 | エイヴィーエックス コーポレイション | 極限環境で使用するための酸化マンガンコンデンサ |
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US8094434B2 (en) | 2012-01-10 |
US8576544B2 (en) | 2013-11-05 |
JP2016086193A (ja) | 2016-05-19 |
JP2013145924A (ja) | 2013-07-25 |
GB2461765B (en) | 2012-06-20 |
JP2019047130A (ja) | 2019-03-22 |
KR20090105845A (ko) | 2009-10-07 |
CN101552138A (zh) | 2009-10-07 |
US20090244812A1 (en) | 2009-10-01 |
US20120113567A1 (en) | 2012-05-10 |
GB0901684D0 (en) | 2009-03-11 |
CN101552138B (zh) | 2013-06-12 |
JP2020109876A (ja) | 2020-07-16 |
DE102009000527A1 (de) | 2009-10-08 |
GB2461765A (en) | 2010-01-20 |
KR101579979B1 (ko) | 2015-12-24 |
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