JP2012216578A - 絶縁ゲート型半導体装置 - Google Patents
絶縁ゲート型半導体装置 Download PDFInfo
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- JP2012216578A JP2012216578A JP2011079182A JP2011079182A JP2012216578A JP 2012216578 A JP2012216578 A JP 2012216578A JP 2011079182 A JP2011079182 A JP 2011079182A JP 2011079182 A JP2011079182 A JP 2011079182A JP 2012216578 A JP2012216578 A JP 2012216578A
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 210000000746 body region Anatomy 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 abstract description 23
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000005452 bending Methods 0.000 abstract description 3
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 1
- 238000005491 wire drawing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 44
- 239000012535 impurity Substances 0.000 description 21
- 108091006146 Channels Proteins 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】 ゲート引き出し配線と、ゲート引き出し配線と保護ダイオードとを接続する導電体とを、チップの同一辺に沿って曲折しない一直線状に配置する。又これらの上に重畳して延在し、これらと保護ダイオードを接続する第1ゲート電極層の曲折部を1以下とする。更に保護ダイオードを導電体またはゲート引き出し配線と隣接して配置し、保護ダイオードの一部をゲートパッド部に近接して配置する。
【選択図】 図1
Description
第1に、ストライプ状のトレンチゲート(第1トレンチ)にT字状(3差路状)に交差するトレンチゲート(第2トレンチ)を設けることで、トレンチ内のポリシリコンの埋め込みを良好にし、ボイドの発生を抑えて、特性ばらつき(オン抵抗ばらつき、閾値電圧ばらつき、順方向電圧ばらつき)を低減することができる。
2 n−型半導体層
6 トレンチ
61 第1トレンチ
62 第2トレンチ
63 第3トレンチ
7 ゲート電極
8 ゲート引き出し配線
81 引き出し部
82 連結部
Claims (7)
- 一導電型半導体層と、
前記一導電型半導体層の表面に設けられた逆導電型のチャネル層と、
該チャネル層を貫通し前記一導電型半導体層に達する深さに設けられ第1方向に延在する複数のストライプ状の第1トレンチと、
隣り合う1組の前記第1トレンチとそれぞれT字状に交差して第2方向に延在する第2トレンチと、
前記第1トレンチおよび前記第2トレンチの内壁に設けられた第1絶縁膜と、
前記第1トレンチおよび前記第2トレンチに埋設されたゲート電極と、
前記第1トレンチおよび前記第2トレンチの前記ゲート電極に埋設された第2絶縁膜と、
前記第2方向に延在し前記チャネル層表面にストライプ状に設けられた一導電型のソース領域と、
を具備することを特徴とする絶縁ゲート型半導体装置。 - 前記ソース領域は前記第2トレンチと隣接して配置されることを特徴とする請求項1に記載の絶縁ゲート型半導体装置。
- 前記1組の第1トレンチは終端部において連続することを特徴とする請求項1または請求項2に記載の絶縁ゲート型半導体装置。
- 前記チャネル層表面に逆導電型のボディ領域が設けられ、該ボディ領域は全ての前記ソース領域の外側を囲んでこれと隣接することを特徴とする請求項3に記載の絶縁ゲート型半導体装置。
- 前記ボディ領域は前記終端部の外側まで設けられることを特徴とする請求項4に記載の絶縁ゲート型半導体装置。
- 前記ゲート引き出し配線は、前記一導電型半導体層の一の辺に沿って一直線状に設けられることを特徴とする請求項1から請求項5のいずれかに記載の絶縁ゲート型半導体装置。
- 前記ゲート引き出し配線上に延在してこれと接続するゲート金属層が設けられ、該ゲート金属層の曲折部は1以下であることを特徴とする請求項6に記載の絶縁ゲート型半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011079182A JP5738653B2 (ja) | 2011-03-31 | 2011-03-31 | 絶縁ゲート型半導体装置 |
US13/435,833 US8779507B2 (en) | 2011-03-31 | 2012-03-30 | Insulated gate semiconductor device |
CN201210092830.2A CN102738236B (zh) | 2011-03-31 | 2012-03-31 | 绝缘栅型半导体装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2011079182A JP5738653B2 (ja) | 2011-03-31 | 2011-03-31 | 絶縁ゲート型半導体装置 |
Publications (2)
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JP2012216578A true JP2012216578A (ja) | 2012-11-08 |
JP5738653B2 JP5738653B2 (ja) | 2015-06-24 |
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JP2011079182A Active JP5738653B2 (ja) | 2011-03-31 | 2011-03-31 | 絶縁ゲート型半導体装置 |
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Country | Link |
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US (1) | US8779507B2 (ja) |
JP (1) | JP5738653B2 (ja) |
CN (1) | CN102738236B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201430957A (zh) * | 2013-01-25 | 2014-08-01 | Anpec Electronics Corp | 半導體功率元件的製作方法 |
EP3817066A1 (en) * | 2019-10-30 | 2021-05-05 | Infineon Technologies Austria AG | Semiconductor devices |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168329A (ja) * | 1999-12-13 | 2001-06-22 | Fuji Electric Co Ltd | トレンチ型mos半導体装置 |
JP2005235913A (ja) * | 2004-02-18 | 2005-09-02 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2010238885A (ja) * | 2009-03-31 | 2010-10-21 | Renesas Electronics Corp | 半導体装置とその製造方法 |
Family Cites Families (21)
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US5072266A (en) * | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
JP2837014B2 (ja) * | 1992-02-17 | 1998-12-14 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US5410170A (en) * | 1993-04-14 | 1995-04-25 | Siliconix Incorporated | DMOS power transistors with reduced number of contacts using integrated body-source connections |
JP3396553B2 (ja) * | 1994-02-04 | 2003-04-14 | 三菱電機株式会社 | 半導体装置の製造方法及び半導体装置 |
US5405794A (en) * | 1994-06-14 | 1995-04-11 | Philips Electronics North America Corporation | Method of producing VDMOS device of increased power density |
US5674766A (en) * | 1994-12-30 | 1997-10-07 | Siliconix Incorporated | Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer |
US5814858A (en) * | 1996-03-15 | 1998-09-29 | Siliconix Incorporated | Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer |
US6239463B1 (en) * | 1997-08-28 | 2001-05-29 | Siliconix Incorporated | Low resistance power MOSFET or other device containing silicon-germanium layer |
JP3329707B2 (ja) * | 1997-09-30 | 2002-09-30 | 株式会社東芝 | 半導体装置 |
US6413822B2 (en) * | 1999-04-22 | 2002-07-02 | Advanced Analogic Technologies, Inc. | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer |
JP3647676B2 (ja) * | 1999-06-30 | 2005-05-18 | 株式会社東芝 | 半導体装置 |
US6518621B1 (en) * | 1999-09-14 | 2003-02-11 | General Semiconductor, Inc. | Trench DMOS transistor having reduced punch-through |
US6525372B2 (en) * | 2000-11-16 | 2003-02-25 | Silicon Wireless Corporation | Vertical power devices having insulated source electrodes in discontinuous deep trenches |
US6713351B2 (en) * | 2001-03-28 | 2004-03-30 | General Semiconductor, Inc. | Double diffused field effect transistor having reduced on-resistance |
JP3906105B2 (ja) * | 2002-03-29 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
JP4807768B2 (ja) * | 2004-06-23 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | パワートランジスタ装置及びそれを用いたパワー制御システム |
JP2006202931A (ja) * | 2005-01-20 | 2006-08-03 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4955222B2 (ja) * | 2005-05-20 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2009224458A (ja) | 2008-03-14 | 2009-10-01 | New Japan Radio Co Ltd | Mosfet型半導体装置及びその製造方法 |
JP2010238796A (ja) | 2009-03-30 | 2010-10-21 | Sanyo Electric Co Ltd | 半導体装置 |
US8502302B2 (en) * | 2011-05-02 | 2013-08-06 | Alpha And Omega Semiconductor Incorporated | Integrating Schottky diode into power MOSFET |
-
2011
- 2011-03-31 JP JP2011079182A patent/JP5738653B2/ja active Active
-
2012
- 2012-03-30 US US13/435,833 patent/US8779507B2/en active Active
- 2012-03-31 CN CN201210092830.2A patent/CN102738236B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168329A (ja) * | 1999-12-13 | 2001-06-22 | Fuji Electric Co Ltd | トレンチ型mos半導体装置 |
JP2005235913A (ja) * | 2004-02-18 | 2005-09-02 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2010238885A (ja) * | 2009-03-31 | 2010-10-21 | Renesas Electronics Corp | 半導体装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120248531A1 (en) | 2012-10-04 |
CN102738236A (zh) | 2012-10-17 |
CN102738236B (zh) | 2016-02-24 |
JP5738653B2 (ja) | 2015-06-24 |
US8779507B2 (en) | 2014-07-15 |
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