JP2012132058A - 電気めっき方法 - Google Patents
電気めっき方法 Download PDFInfo
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- JP2012132058A JP2012132058A JP2010284326A JP2010284326A JP2012132058A JP 2012132058 A JP2012132058 A JP 2012132058A JP 2010284326 A JP2010284326 A JP 2010284326A JP 2010284326 A JP2010284326 A JP 2010284326A JP 2012132058 A JP2012132058 A JP 2012132058A
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- 238000000034 method Methods 0.000 title claims description 26
- 238000009713 electroplating Methods 0.000 title claims description 22
- 238000007747 plating Methods 0.000 claims abstract description 335
- 239000000758 substrate Substances 0.000 claims abstract description 209
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 40
- 229910052802 copper Inorganic materials 0.000 abstract description 40
- 239000010949 copper Substances 0.000 abstract description 40
- 230000007547 defect Effects 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 7
- 230000001737 promoting effect Effects 0.000 abstract description 5
- 230000008859 change Effects 0.000 abstract description 3
- 239000000725 suspension Substances 0.000 abstract description 3
- 239000011800 void material Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 29
- 238000003756 stirring Methods 0.000 description 22
- 229910021645 metal ion Inorganic materials 0.000 description 16
- 238000011282 treatment Methods 0.000 description 15
- 238000005406 washing Methods 0.000 description 14
- 238000001994 activation Methods 0.000 description 11
- 239000000654 additive Substances 0.000 description 11
- 230000004913 activation Effects 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012856 packing Methods 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 229920002873 Polyethylenimine Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000031864 metaphase Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- -1 halogen ions Chemical class 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000003115 supporting electrolyte Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- CYKLGTUKGYURDP-UHFFFAOYSA-L copper;hydrogen sulfate;hydroxide Chemical compound O.[Cu+2].[O-]S([O-])(=O)=O CYKLGTUKGYURDP-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】ビアが形成された基板の表面とアノードとを互いに対向させつつ、めっき槽内のめっき液中に基板とアノードとを浸漬させて配置し、前記基板と前記アノードとの間に、電流値を一定としためっき電流を、供給と停止とを断続的に繰返しながら、めっき電流が流れる時間の占める割合がめっきの進行に伴って大きくなるように変化させて、前記ビア内にめっき金属を埋込む。
【選択図】図10
Description
なお、めっき電流の停止時間中は、めっき膜の溶解を防ぐために、めっき膜の電位が自然電位よりも卑に保たれるような微弱な電流を流しても良い。
14 バリア層
16 銅シード層
18 めっき金属
20 補助金属層
124 洗浄・乾燥装置
126 前処理装置
160 基板ホルダ
164 ストッカ
166 活性化処理装置
168a,168b 水洗装置
170 めっき装置
172 ブロー装置
186 めっき槽
220 アノード
224 調整板
232 攪拌パドル(攪拌具)
250 めっき電源
252 制御部
Claims (6)
- ビアが形成された基板の表面とアノードとを互いに対向させつつ、めっき槽内のめっき液中に基板とアノードとを浸漬させて配置し、
前記基板と前記アノードとの間に、電流値を一定としためっき電流を、供給と停止とを断続的に繰返しながら、めっき電流が流れる時間の占める割合がめっきの進行に伴って大きくなるように変化させて、前記ビア内にめっき金属を埋込むことを特徴とする電気めっき方法。 - めっき電流の供給を断続的に停止する停止時間をめっきの進行に伴って短くさせながら、前記基板と前記アノードとの間にめっき電流を流すことを特徴とする請求項1記載の電気めっき方法。
- めっき電流を供給する供給時間を一定にして、前記基板と前記アノードとの間にめっき電流を流すことを特徴とする請求項1記載の電気めっき方法。
- めっき電流を連続して供給する供給時間をめっきの進行に伴って長くさせながら、前記基板と前記アノードとの間にめっき電流を流すことを特徴とする請求項1記載の電気めっき方法。
- めっき電流の供給を断続的に停止する停止時間を一定にして、前記基板と前記アノードとの間にめっき電流を流すことを特徴とする請求項4記載の電気めっき方法。
- めっき電流の供給と停止とを断続的に繰返すめっき電流供給ピッチを一定にして、前記基板と前記アノードとの間にめっき電流を流すことを特徴とする請求項1乃至5のいずれかに記載の電気めっき方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010284326A JP5504147B2 (ja) | 2010-12-21 | 2010-12-21 | 電気めっき方法 |
TW100143545A TWI473905B (zh) | 2010-12-21 | 2011-11-28 | 電鍍方法 |
US13/311,020 US9376758B2 (en) | 2010-12-21 | 2011-12-05 | Electroplating method |
KR1020110138330A KR101474377B1 (ko) | 2010-12-21 | 2011-12-20 | 전기도금방법 |
CN201110443521.0A CN102534714B (zh) | 2010-12-21 | 2011-12-20 | 电镀方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010284326A JP5504147B2 (ja) | 2010-12-21 | 2010-12-21 | 電気めっき方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012132058A true JP2012132058A (ja) | 2012-07-12 |
JP5504147B2 JP5504147B2 (ja) | 2014-05-28 |
Family
ID=46232955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010284326A Active JP5504147B2 (ja) | 2010-12-21 | 2010-12-21 | 電気めっき方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9376758B2 (ja) |
JP (1) | JP5504147B2 (ja) |
KR (1) | KR101474377B1 (ja) |
CN (1) | CN102534714B (ja) |
TW (1) | TWI473905B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014201835A (ja) * | 2013-04-09 | 2014-10-27 | 株式会社荏原製作所 | 電気めっき方法 |
KR20160009684A (ko) | 2013-05-20 | 2016-01-26 | 도쿄엘렉트론가부시키가이샤 | 전해 처리 방법 및 전해 처리 장치 |
KR20160009571A (ko) | 2013-05-20 | 2016-01-26 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리 방법 및 템플릿 |
KR20160106060A (ko) | 2014-01-08 | 2016-09-09 | 도쿄엘렉트론가부시키가이샤 | 전계 처리 방법 및 전계 처리 장치 |
JP2020132925A (ja) * | 2019-02-15 | 2020-08-31 | 株式会社荏原製作所 | 基板ホルダ及びめっき装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6270730B1 (en) | 1998-06-16 | 2001-08-07 | Northwest Engineering Inc. | Multi-well rotary synthesizer |
KR101992352B1 (ko) * | 2012-09-25 | 2019-06-24 | 삼성전자주식회사 | 반도체 장치 |
KR101506910B1 (ko) * | 2012-09-27 | 2015-03-30 | 티디케이가부시기가이샤 | 이방성 도금 방법 및 박막 코일 |
US10214826B2 (en) | 2013-01-29 | 2019-02-26 | Novellus Systems, Inc. | Low copper electroplating solutions for fill and defect control |
US20160102416A1 (en) * | 2013-01-29 | 2016-04-14 | Novellus Systems, Inc. | Low copper/high halide electroplating solutions for fill and defect control |
CN103484908B (zh) * | 2013-09-29 | 2016-09-21 | 华进半导体封装先导技术研发中心有限公司 | Tsv电化学沉积铜方法 |
JP6239417B2 (ja) * | 2014-03-24 | 2017-11-29 | 株式会社荏原製作所 | 基板処理装置 |
WO2019199614A1 (en) | 2018-04-09 | 2019-10-17 | Lam Research Corporation | Copper electrofill on non-copper liner layers |
JP6790016B2 (ja) * | 2018-04-10 | 2020-11-25 | 上村工業株式会社 | 表面処理装置、表面処理方法及びパドル |
KR102275458B1 (ko) * | 2018-11-30 | 2021-07-13 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 전기화학 도금 시스템 및 사용 방법 |
US11230784B2 (en) | 2018-11-30 | 2022-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electrochemical plating system and method of using |
JP7383441B2 (ja) * | 2019-10-07 | 2023-11-20 | 上村工業株式会社 | 表面処理装置、表面処理方法及びパドル |
US11585008B2 (en) * | 2020-12-29 | 2023-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plating apparatus for plating semiconductor wafer and plating method |
CN115058757B (zh) * | 2022-07-04 | 2024-05-24 | 厦门海辰新材料科技有限公司 | 电镀设备及镀膜机 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242420A (ja) * | 1985-08-19 | 1987-02-24 | Hitachi Ltd | X線マスク用パタ−ン形成方法 |
JPH1197391A (ja) * | 1997-09-16 | 1999-04-09 | Ebara Corp | 半導体ウエハー配線電解メッキ方法 |
JP2000087292A (ja) * | 1998-09-14 | 2000-03-28 | Ibiden Co Ltd | 電気めっき方法、電気めっきによる回路板及びプリント配線板の製造方法、並びに銅被膜からなる回路を有する回路板及び銅被膜からなる配線を有するプリント配線板 |
JP2000353675A (ja) * | 1999-05-03 | 2000-12-19 | Motorola Inc | 半導体ウェハ上に銅層を形成する方法 |
JP2001150454A (ja) * | 1999-11-30 | 2001-06-05 | Canon Inc | マイクロ構造体、及びその作製方法 |
JP2002121699A (ja) * | 2000-05-25 | 2002-04-26 | Nippon Techno Kk | めっき浴の振動流動とパルス状めっき電流との組み合わせを用いた電気めっき方法 |
JP2004124111A (ja) * | 2002-09-30 | 2004-04-22 | Hitachi Kyowa Engineering Co Ltd | 微細Viaホールを有する基板への電解めっき方法および装置 |
JP2007297652A (ja) * | 2006-04-27 | 2007-11-15 | Ebara Corp | めっき方法及びめっき装置 |
JP2010010557A (ja) * | 2008-06-30 | 2010-01-14 | Ebara Corp | 導電材料構造体の形成方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3943048A (en) * | 1973-02-26 | 1976-03-09 | The International Nickel Company, Inc. | Powder anode |
US4666567A (en) * | 1981-07-31 | 1987-05-19 | The Boeing Company | Automated alternating polarity pulse electrolytic processing of electrically conductive substances |
US5268235A (en) * | 1988-09-26 | 1993-12-07 | The United States Of America As Represented By The Secretary Of Commerce | Predetermined concentration graded alloys |
US5750017A (en) * | 1996-08-21 | 1998-05-12 | Lucent Technologies Inc. | Tin electroplating process |
US5972192A (en) * | 1997-07-23 | 1999-10-26 | Advanced Micro Devices, Inc. | Pulse electroplating copper or copper alloys |
US7244677B2 (en) | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
JP3641372B2 (ja) | 1998-10-21 | 2005-04-20 | 株式会社荏原製作所 | 電解めっき方法及び電解めっき装置 |
US7022211B2 (en) | 2000-01-31 | 2006-04-04 | Ebara Corporation | Semiconductor wafer holder and electroplating system for plating a semiconductor wafer |
EP1132500A3 (en) | 2000-03-08 | 2002-01-23 | Applied Materials, Inc. | Method for electrochemical deposition of metal using modulated waveforms |
WO2001068952A1 (fr) | 2000-03-17 | 2001-09-20 | Ebara Corporation | Procede et appareil de plaquage electrolytique |
US7195696B2 (en) * | 2000-05-11 | 2007-03-27 | Novellus Systems, Inc. | Electrode assembly for electrochemical processing of workpiece |
US6881318B2 (en) * | 2001-07-26 | 2005-04-19 | Applied Materials, Inc. | Dynamic pulse plating for high aspect ratio features |
US6746591B2 (en) | 2001-10-16 | 2004-06-08 | Applied Materials Inc. | ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature |
JP3780302B2 (ja) | 2002-02-27 | 2006-05-31 | 株式会社関東学院大学表面工学研究所 | ビアホール及びスルーホールを有する基板のめっき方法 |
JP2003318544A (ja) | 2002-04-22 | 2003-11-07 | Toppan Printing Co Ltd | 多層配線基板およびその製造方法 |
GB0302222D0 (en) | 2003-01-31 | 2003-03-05 | Univ Heriot Watt | Stencil manufacture |
DE10311575B4 (de) | 2003-03-10 | 2007-03-22 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis |
JP4624738B2 (ja) | 2003-08-21 | 2011-02-02 | 株式会社荏原製作所 | めっき装置 |
US7329334B2 (en) | 2004-09-16 | 2008-02-12 | Herdman Roderick D | Controlling the hardness of electrodeposited copper coatings by variation of current profile |
US7850836B2 (en) * | 2005-11-09 | 2010-12-14 | Nanyang Technological University | Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate |
JP2006265735A (ja) | 2006-04-27 | 2006-10-05 | Hitachi Kyowa Engineering Co Ltd | 微細Viaホールを有する基板への電解めっき方法 |
-
2010
- 2010-12-21 JP JP2010284326A patent/JP5504147B2/ja active Active
-
2011
- 2011-11-28 TW TW100143545A patent/TWI473905B/zh active
- 2011-12-05 US US13/311,020 patent/US9376758B2/en active Active
- 2011-12-20 KR KR1020110138330A patent/KR101474377B1/ko active IP Right Grant
- 2011-12-20 CN CN201110443521.0A patent/CN102534714B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242420A (ja) * | 1985-08-19 | 1987-02-24 | Hitachi Ltd | X線マスク用パタ−ン形成方法 |
JPH1197391A (ja) * | 1997-09-16 | 1999-04-09 | Ebara Corp | 半導体ウエハー配線電解メッキ方法 |
JP2000087292A (ja) * | 1998-09-14 | 2000-03-28 | Ibiden Co Ltd | 電気めっき方法、電気めっきによる回路板及びプリント配線板の製造方法、並びに銅被膜からなる回路を有する回路板及び銅被膜からなる配線を有するプリント配線板 |
JP2000353675A (ja) * | 1999-05-03 | 2000-12-19 | Motorola Inc | 半導体ウェハ上に銅層を形成する方法 |
JP2001150454A (ja) * | 1999-11-30 | 2001-06-05 | Canon Inc | マイクロ構造体、及びその作製方法 |
JP2002121699A (ja) * | 2000-05-25 | 2002-04-26 | Nippon Techno Kk | めっき浴の振動流動とパルス状めっき電流との組み合わせを用いた電気めっき方法 |
JP2004124111A (ja) * | 2002-09-30 | 2004-04-22 | Hitachi Kyowa Engineering Co Ltd | 微細Viaホールを有する基板への電解めっき方法および装置 |
JP2007297652A (ja) * | 2006-04-27 | 2007-11-15 | Ebara Corp | めっき方法及びめっき装置 |
JP2010010557A (ja) * | 2008-06-30 | 2010-01-14 | Ebara Corp | 導電材料構造体の形成方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014201835A (ja) * | 2013-04-09 | 2014-10-27 | 株式会社荏原製作所 | 電気めっき方法 |
KR20160009684A (ko) | 2013-05-20 | 2016-01-26 | 도쿄엘렉트론가부시키가이샤 | 전해 처리 방법 및 전해 처리 장치 |
KR20160009571A (ko) | 2013-05-20 | 2016-01-26 | 도쿄엘렉트론가부시키가이샤 | 기판의 처리 방법 및 템플릿 |
US10036095B2 (en) | 2013-05-20 | 2018-07-31 | Tokyo Electron Limited | Electrolytic treatment method and electrolytic treatment apparatus |
US10428438B2 (en) | 2013-05-20 | 2019-10-01 | Tokyo Electron Limited | Substrate processing method and template |
KR20160106060A (ko) | 2014-01-08 | 2016-09-09 | 도쿄엘렉트론가부시키가이샤 | 전계 처리 방법 및 전계 처리 장치 |
US10294575B2 (en) | 2014-01-08 | 2019-05-21 | Tokyo Electron Limited | Electric field treatment method and electric field treatment device |
JP2020132925A (ja) * | 2019-02-15 | 2020-08-31 | 株式会社荏原製作所 | 基板ホルダ及びめっき装置 |
JP7146663B2 (ja) | 2019-02-15 | 2022-10-04 | 株式会社荏原製作所 | 基板ホルダ及びめっき装置 |
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JP5504147B2 (ja) | 2014-05-28 |
CN102534714A (zh) | 2012-07-04 |
KR20120070520A (ko) | 2012-06-29 |
TWI473905B (zh) | 2015-02-21 |
CN102534714B (zh) | 2016-06-22 |
US9376758B2 (en) | 2016-06-28 |
US20120152749A1 (en) | 2012-06-21 |
KR101474377B1 (ko) | 2014-12-18 |
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