JP2012114449A - シリコンウェハーのテクスチャ形成用の組成物及び方法 - Google Patents
シリコンウェハーのテクスチャ形成用の組成物及び方法 Download PDFInfo
- Publication number
- JP2012114449A JP2012114449A JP2011271710A JP2011271710A JP2012114449A JP 2012114449 A JP2012114449 A JP 2012114449A JP 2011271710 A JP2011271710 A JP 2011271710A JP 2011271710 A JP2011271710 A JP 2011271710A JP 2012114449 A JP2012114449 A JP 2012114449A
- Authority
- JP
- Japan
- Prior art keywords
- texturing
- surfactants
- composition
- surfactant
- texture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 319
- 238000000034 method Methods 0.000 title claims abstract description 189
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 52
- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 235000012431 wafers Nutrition 0.000 title abstract description 118
- 239000004094 surface-active agent Substances 0.000 claims abstract description 152
- 238000009736 wetting Methods 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 100
- 238000005530 etching Methods 0.000 claims description 67
- 239000002253 acid Substances 0.000 claims description 51
- -1 glycerin ester Chemical class 0.000 claims description 41
- 238000004140 cleaning Methods 0.000 claims description 27
- 229920001296 polysiloxane Polymers 0.000 claims description 25
- 239000002518 antifoaming agent Substances 0.000 claims description 24
- 150000003839 salts Chemical class 0.000 claims description 22
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 21
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 15
- 150000001412 amines Chemical class 0.000 claims description 13
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims description 13
- 229920001223 polyethylene glycol Polymers 0.000 claims description 13
- 239000002202 Polyethylene glycol Substances 0.000 claims description 12
- 229960003237 betaine Drugs 0.000 claims description 12
- 239000003945 anionic surfactant Substances 0.000 claims description 11
- 239000003093 cationic surfactant Substances 0.000 claims description 11
- 239000002736 nonionic surfactant Substances 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 239000002888 zwitterionic surfactant Substances 0.000 claims description 10
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 9
- 239000000194 fatty acid Substances 0.000 claims description 9
- 229930195729 fatty acid Natural products 0.000 claims description 9
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 8
- 150000004665 fatty acids Chemical class 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 150000007524 organic acids Chemical class 0.000 claims description 7
- 229920001451 polypropylene glycol Polymers 0.000 claims description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 150000001335 aliphatic alkanes Chemical group 0.000 claims description 6
- 125000000129 anionic group Chemical group 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 150000002009 diols Chemical class 0.000 claims description 5
- 150000002148 esters Chemical class 0.000 claims description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- 150000004996 alkyl benzenes Chemical class 0.000 claims description 4
- 229940077388 benzenesulfonate Drugs 0.000 claims description 4
- 150000002334 glycols Chemical class 0.000 claims description 4
- 235000005985 organic acids Nutrition 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 239000004711 α-olefin Substances 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 3
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical class OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000012190 activator Substances 0.000 claims description 3
- 238000001007 flame atomic emission spectroscopy Methods 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- 239000003921 oil Substances 0.000 claims description 3
- 235000019198 oils Nutrition 0.000 claims description 3
- 229920000137 polyphosphoric acid Polymers 0.000 claims description 3
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 3
- PSBDWGZCVUAZQS-UHFFFAOYSA-N (dimethylsulfonio)acetate Chemical compound C[S+](C)CC([O-])=O PSBDWGZCVUAZQS-UHFFFAOYSA-N 0.000 claims description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005977 Ethylene Substances 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 150000001413 amino acids Chemical class 0.000 claims description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 claims description 2
- 150000001733 carboxylic acid esters Chemical class 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- 239000003240 coconut oil Substances 0.000 claims description 2
- 235000019864 coconut oil Nutrition 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- MOTZDAYCYVMXPC-UHFFFAOYSA-N dodecyl hydrogen sulfate Chemical group CCCCCCCCCCCCOS(O)(=O)=O MOTZDAYCYVMXPC-UHFFFAOYSA-N 0.000 claims description 2
- 229930182478 glucoside Natural products 0.000 claims description 2
- 150000008131 glucosides Chemical class 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 claims description 2
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 claims description 2
- 239000012188 paraffin wax Substances 0.000 claims description 2
- 239000003208 petroleum Substances 0.000 claims description 2
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 229920001184 polypeptide Polymers 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 150000003138 primary alcohols Chemical class 0.000 claims description 2
- 108090000765 processed proteins & peptides Proteins 0.000 claims description 2
- 102000004196 processed proteins & peptides Human genes 0.000 claims description 2
- PZJDKDVITVGDLW-UHFFFAOYSA-N prop-2-enyl benzenesulfonate Chemical group C=CCOS(=O)(=O)C1=CC=CC=C1 PZJDKDVITVGDLW-UHFFFAOYSA-N 0.000 claims description 2
- 229940117986 sulfobetaine Drugs 0.000 claims description 2
- 150000003460 sulfonic acids Chemical class 0.000 claims description 2
- 239000003784 tall oil Substances 0.000 claims description 2
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims description 2
- UFTFJSFQGQCHQW-UHFFFAOYSA-N triformin Chemical compound O=COCC(OC=O)COC=O UFTFJSFQGQCHQW-UHFFFAOYSA-N 0.000 claims description 2
- FKKAGFLIPSSCHT-UHFFFAOYSA-N 1-dodecoxydodecane;sulfuric acid Chemical group OS(O)(=O)=O.CCCCCCCCCCCCOCCCCCCCCCCCC FKKAGFLIPSSCHT-UHFFFAOYSA-N 0.000 claims 1
- IEORSVTYLWZQJQ-UHFFFAOYSA-N 2-(2-nonylphenoxy)ethanol Chemical compound CCCCCCCCCC1=CC=CC=C1OCCO IEORSVTYLWZQJQ-UHFFFAOYSA-N 0.000 claims 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims 1
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 claims 1
- RKWGIWYCVPQPMF-UHFFFAOYSA-N Chloropropamide Chemical compound CCCNC(=O)NS(=O)(=O)C1=CC=C(Cl)C=C1 RKWGIWYCVPQPMF-UHFFFAOYSA-N 0.000 claims 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims 1
- 229940053200 antiepileptics fatty acid derivative Drugs 0.000 claims 1
- 108700003601 dimethylglycine Proteins 0.000 claims 1
- 229920005610 lignin Polymers 0.000 claims 1
- 229920000847 nonoxynol Polymers 0.000 claims 1
- 229920002113 octoxynol Polymers 0.000 claims 1
- 239000012487 rinsing solution Substances 0.000 claims 1
- 201000000306 sarcoidosis Diseases 0.000 claims 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 155
- 230000015572 biosynthetic process Effects 0.000 description 99
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 96
- 239000000758 substrate Substances 0.000 description 91
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 76
- 239000000243 solution Substances 0.000 description 57
- 238000009472 formulation Methods 0.000 description 39
- 239000000654 additive Substances 0.000 description 31
- 238000001878 scanning electron micrograph Methods 0.000 description 27
- 238000002310 reflectometry Methods 0.000 description 25
- 150000007513 acids Chemical class 0.000 description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 239000002585 base Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 18
- 239000008367 deionised water Substances 0.000 description 16
- 229910021641 deionized water Inorganic materials 0.000 description 16
- 239000002270 dispersing agent Substances 0.000 description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000013078 crystal Substances 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- 238000011282 treatment Methods 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 230000002378 acidificating effect Effects 0.000 description 8
- 239000002738 chelating agent Substances 0.000 description 8
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 7
- 239000003637 basic solution Substances 0.000 description 7
- 239000006260 foam Substances 0.000 description 7
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 7
- 238000007654 immersion Methods 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000007522 mineralic acids Chemical class 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000011734 sodium Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000000080 wetting agent Substances 0.000 description 5
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 4
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000004679 hydroxides Chemical class 0.000 description 4
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 4
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 3
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- 235000011054 acetic acid Nutrition 0.000 description 3
- 239000000908 ammonium hydroxide Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- 125000002091 cationic group Chemical group 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 235000015165 citric acid Nutrition 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 229940093915 gynecological organic acid Drugs 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229960003330 pentetic acid Drugs 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 125000000542 sulfonic acid group Chemical group 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- ALRHLSYJTWAHJZ-UHFFFAOYSA-N 3-hydroxypropionic acid Chemical compound OCCC(O)=O ALRHLSYJTWAHJZ-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- 108010010803 Gelatin Proteins 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- LCTONWCANYUPML-UHFFFAOYSA-N Pyruvic acid Chemical compound CC(=O)C(O)=O LCTONWCANYUPML-UHFFFAOYSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 150000008051 alkyl sulfates Chemical class 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 239000011668 ascorbic acid Substances 0.000 description 2
- 229960005070 ascorbic acid Drugs 0.000 description 2
- 235000010323 ascorbic acid Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 235000010980 cellulose Nutrition 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 229920000159 gelatin Polymers 0.000 description 2
- 239000008273 gelatin Substances 0.000 description 2
- 235000019322 gelatine Nutrition 0.000 description 2
- 235000011852 gelatine desserts Nutrition 0.000 description 2
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 2
- 239000000416 hydrocolloid Substances 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 229940100630 metacresol Drugs 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920001277 pectin Polymers 0.000 description 2
- 235000010987 pectin Nutrition 0.000 description 2
- 239000001814 pectin Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229940057950 sodium laureth sulfate Drugs 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- SXHLENDCVBIJFO-UHFFFAOYSA-M sodium;2-[2-(2-dodecoxyethoxy)ethoxy]ethyl sulfate Chemical compound [Na+].CCCCCCCCCCCCOCCOCCOCCOS([O-])(=O)=O SXHLENDCVBIJFO-UHFFFAOYSA-M 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 150000005846 sugar alcohols Chemical class 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- KQTIIICEAUMSDG-UHFFFAOYSA-N tricarballylic acid Chemical compound OC(=O)CC(C(O)=O)CC(O)=O KQTIIICEAUMSDG-UHFFFAOYSA-N 0.000 description 2
- 239000000230 xanthan gum Substances 0.000 description 2
- 235000010493 xanthan gum Nutrition 0.000 description 2
- 229920001285 xanthan gum Polymers 0.000 description 2
- 229940082509 xanthan gum Drugs 0.000 description 2
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 1
- FVRSWMRVYMPTBU-UHFFFAOYSA-M 1-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCC(O)[N+](C)(C)C FVRSWMRVYMPTBU-UHFFFAOYSA-M 0.000 description 1
- MXYOPVWZZKEAGX-UHFFFAOYSA-N 1-phosphonoethylphosphonic acid Chemical compound OP(=O)(O)C(C)P(O)(O)=O MXYOPVWZZKEAGX-UHFFFAOYSA-N 0.000 description 1
- OVSKIKFHRZPJSS-UHFFFAOYSA-N 2,4-D Chemical compound OC(=O)COC1=CC=C(Cl)C=C1Cl OVSKIKFHRZPJSS-UHFFFAOYSA-N 0.000 description 1
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 description 1
- KZTWONRVIPPDKH-UHFFFAOYSA-N 2-(piperidin-1-yl)ethanol Chemical compound OCCN1CCCCC1 KZTWONRVIPPDKH-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- HVYJSOSGTDINLW-UHFFFAOYSA-N 2-[dimethyl(octadecyl)azaniumyl]acetate Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CC([O-])=O HVYJSOSGTDINLW-UHFFFAOYSA-N 0.000 description 1
- KKMIHKCGXQMFEU-UHFFFAOYSA-N 2-[dimethyl(tetradecyl)azaniumyl]acetate Chemical compound CCCCCCCCCCCCCC[N+](C)(C)CC([O-])=O KKMIHKCGXQMFEU-UHFFFAOYSA-N 0.000 description 1
- AMRBZKOCOOPYNY-QXMHVHEDSA-N 2-[dimethyl-[(z)-octadec-9-enyl]azaniumyl]acetate Chemical compound CCCCCCCC\C=C/CCCCCCCC[N+](C)(C)CC([O-])=O AMRBZKOCOOPYNY-QXMHVHEDSA-N 0.000 description 1
- XPTYFQIWAFDDML-UHFFFAOYSA-N 2-aminoacetic acid;ethanol Chemical compound CCO.NCC(O)=O.NCC(O)=O XPTYFQIWAFDDML-UHFFFAOYSA-N 0.000 description 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 description 1
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- TUYRAIOYNUOFNH-UHFFFAOYSA-N CP(=O)(O)OP(=O)O Chemical compound CP(=O)(O)OP(=O)O TUYRAIOYNUOFNH-UHFFFAOYSA-N 0.000 description 1
- LEVWYRKDKASIDU-QWWZWVQMSA-N D-cystine Chemical compound OC(=O)[C@H](N)CSSC[C@@H](N)C(O)=O LEVWYRKDKASIDU-QWWZWVQMSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- BWLUMTFWVZZZND-UHFFFAOYSA-N Dibenzylamine Chemical compound C=1C=CC=CC=1CNCC1=CC=CC=C1 BWLUMTFWVZZZND-UHFFFAOYSA-N 0.000 description 1
- XBPCUCUWBYBCDP-UHFFFAOYSA-N Dicyclohexylamine Chemical compound C1CCCCC1NC1CCCCC1 XBPCUCUWBYBCDP-UHFFFAOYSA-N 0.000 description 1
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 1
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- RAXXELZNTBOGNW-UHFFFAOYSA-O Imidazolium Chemical compound C1=C[NH+]=CN1 RAXXELZNTBOGNW-UHFFFAOYSA-O 0.000 description 1
- 229920005692 JONCRYL® Polymers 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- 229920001732 Lignosulfonate Chemical group 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- GGAUUQHSCNMCAU-UHFFFAOYSA-N butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)CC(C(O)=O)C(C(O)=O)CC(O)=O GGAUUQHSCNMCAU-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- MRUAUOIMASANKQ-UHFFFAOYSA-N cocamidopropyl betaine Chemical compound CCCCCCCCCCCC(=O)NCCC[N+](C)(C)CC([O-])=O MRUAUOIMASANKQ-UHFFFAOYSA-N 0.000 description 1
- 229940073507 cocamidopropyl betaine Drugs 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004624 confocal microscopy Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 125000006165 cyclic alkyl group Chemical group 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940090960 diethylenetriamine pentamethylene phosphonic acid Drugs 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- SMVRDGHCVNAOIN-UHFFFAOYSA-L disodium;1-dodecoxydodecane;sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O.CCCCCCCCCCCCOCCCCCCCCCCCC SMVRDGHCVNAOIN-UHFFFAOYSA-L 0.000 description 1
- 229940043264 dodecyl sulfate Drugs 0.000 description 1
- JZKFHQMONDVVNF-UHFFFAOYSA-N dodecyl sulfate;tris(2-hydroxyethyl)azanium Chemical compound OCCN(CCO)CCO.CCCCCCCCCCCCOS(O)(=O)=O JZKFHQMONDVVNF-UHFFFAOYSA-N 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 235000019197 fats Nutrition 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- WUXWWSDWRUVSNE-UHFFFAOYSA-N methyl propane-1-sulfonate;prop-2-enamide Chemical class NC(=O)C=C.CCCS(=O)(=O)OC WUXWWSDWRUVSNE-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 229940078490 n,n-dimethylglycine Drugs 0.000 description 1
- VMESOKCXSYNAKD-UHFFFAOYSA-N n,n-dimethylhydroxylamine Chemical compound CN(C)O VMESOKCXSYNAKD-UHFFFAOYSA-N 0.000 description 1
- RIWRFSMVIUAEBX-UHFFFAOYSA-N n-methyl-1-phenylmethanamine Chemical compound CNCC1=CC=CC=C1 RIWRFSMVIUAEBX-UHFFFAOYSA-N 0.000 description 1
- CPQCSJYYDADLCZ-UHFFFAOYSA-N n-methylhydroxylamine Chemical compound CNO CPQCSJYYDADLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- UPHWVVKYDQHTCF-UHFFFAOYSA-N octadecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCCCCCCCN UPHWVVKYDQHTCF-UHFFFAOYSA-N 0.000 description 1
- 229920002114 octoxynol-9 Chemical class 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HWGNBUXHKFFFIH-UHFFFAOYSA-I pentasodium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O HWGNBUXHKFFFIH-UHFFFAOYSA-I 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000223 polyglycerol Chemical class 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 150000003139 primary aliphatic amines Chemical class 0.000 description 1
- NJKRDXUWFBJCDI-UHFFFAOYSA-N propane-1,1,2,3-tetracarboxylic acid Chemical compound OC(=O)CC(C(O)=O)C(C(O)=O)C(O)=O NJKRDXUWFBJCDI-UHFFFAOYSA-N 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229940107700 pyruvic acid Drugs 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 1
- 150000005619 secondary aliphatic amines Chemical class 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- ACTRVOBWPAIOHC-UHFFFAOYSA-N succimer Chemical compound OC(=O)C(S)C(S)C(O)=O ACTRVOBWPAIOHC-UHFFFAOYSA-N 0.000 description 1
- 150000003900 succinic acid esters Chemical class 0.000 description 1
- 235000000346 sugar Nutrition 0.000 description 1
- 150000008163 sugars Chemical class 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 229940104261 taurate Drugs 0.000 description 1
- 150000003510 tertiary aliphatic amines Chemical class 0.000 description 1
- DVUVKWLUHXXIHK-UHFFFAOYSA-N tetraazanium;tetrahydroxide Chemical compound [NH4+].[NH4+].[NH4+].[NH4+].[OH-].[OH-].[OH-].[OH-] DVUVKWLUHXXIHK-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 235000015112 vegetable and seed oil Nutrition 0.000 description 1
- 239000008158 vegetable oil Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 239000000811 xylitol Substances 0.000 description 1
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 description 1
- 235000010447 xylitol Nutrition 0.000 description 1
- 229960002675 xylitol Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/86—Mixtures of anionic, cationic, and non-ionic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
【解決手段】1種以上の界面活性剤を有する、シリコンウェハーをテクスチャ形成するためのテクスチャ形成前処理組成物。1種以上の界面活性剤を有するテクスチャ形成前処理組成物でシリコンウェハーを濡らす工程に続いて、テクスチャ形成工程を有する、シリコンウェハーのテクスチャ形成方法。
【選択図】図1
Description
いくつかの実施態様では、スルホン酸系界面活性剤は、直鎖アルキル基を含む。
炭素鎖長は、10〜18の炭素原子のこの種類の市販の界面活性剤によって変化する場合があるこの界面活性剤は、様々な分布の炭素鎖長の界面活性剤を含有することもある。
切断したままのソーラーグレードの単結晶ウェハーを、2つの供給源から得た。これらのウェハーを、様々なプロセス順序で処理して、表面へのテクスチャ形成を達成した。
第三の供給源から得た切断したままの単結晶ウェハーを、例1で記載したプロセスCを用いて処理した。ただし、例1の配合物1を、表2の様々なテクスチャ形成前処理配合物で置き換えた(例1からの配合物1は、表2にも含まれている)。
ピラミッド構造に対するテクスチャ形成時間の影響について調査するために、第二の供給源からのウェハーを、プロセスA、B及びCを用いて処理したが、ウェハーに対して、処理時間を変えた。用いたテクスチャ形成時間は、それぞれに対して5分、10分、15分及び20分だった。各プロセスでのそれぞれのテクスチャ形成時間で処理した代表的なウェハーの、65°の傾斜角でのSEMを撮った。5分のテクスチャ形成工程を用いた、プロセスAを用いて処理したウェハーに対するSEMを、図5Aに示す。10分のテクスチャ形成工程を用いた、プロセスAを用いて処理したウェハーに対するSEMを、図5Bに示す。15分のテクスチャ形成工程を用いた、プロセスAを用いて処理したウェハーに対するSEMを、図5Cに示す。20分のテクスチャ形成工程を用いた、プロセスAを用いて処理したウェハーに対するSEMを、図5Dに示す。5分のテクスチャ形成工程を用いた、プロセスBを用いて処理したウェハーに対するSEMを、図6Aに示す。10分のテクスチャ形成工程を用いた、プロセスBを用いて処理したウェハーに対するSEMを、図6Bに示す。15分のテクスチャ形成工程を用いた、プロセスBを用いて処理したウェハーに対するSEMを、図6Cに示す。20分のテクスチャ形成工程を用いた、プロセスBを用いて処理したウェハーに対するSEMを、図6Dに示す。5分のテクスチャ形成工程を用いた、プロセスCを用いて処理したウェハーに対するSEMを、図7Aに示す。10分のテクスチャ形成工程を用いた、プロセスCを用いて処理したウェハーに対するSEMを、図7Bに示す。15分のテクスチャ形成工程を用いた、プロセスCを用いて処理したウェハーに対するSEMを、図7Cに示す。20分のテクスチャ形成工程を用いた、プロセスCを用いて処理したウェハーに対するSEMを、図7Dに示す。
本発明のテクスチャ形成前処理組成物に、多数の界面活性剤を用いた。この例では、プロセスDを用いた:(i)切断したままの単結晶ウェハー片を、20%のKOH溶液において、10分、80℃でエッチングした;(ii)3分間リンスした;(iii)これらの試験片を、図4に示す界面活性剤をそれぞれ1.5wt%含有する(配合物として表4に特定した)様々なテクスチャ形成前処理組成物で、5分間、室温で浸漬した;(iv)オーバーフローリンスを用いて、試験片をDI水で3分間リンスした;及び(v)試験片を、4%のKOH溶液を用いて、80℃で処理した。平均反射率を測定した。反射率が低ければ低いほど、テクスチャ形成が良好である。
塩基性のテクスチャ形成前処理組成物を、イソプロピルアルコールがない場合のシリコンウェハーへのテクスチャ形成に与える影響について評価した。配合物28は、1wt%のKOH及び3wt%のHostapur SAS Surfactant(精製した酸の形態)、並びに残部の水からなる。切断したままの単結晶ウェハー試験片を、まず65℃で5分間、20%のKOH溶液で処理して、表面からソーダメージを除去し、3分のDI水リンスを行った。この工程の後で、ウェハーを配合物28に80℃で15分間曝露し、そしてウェットベンチでのDI水を用いた1サイクルのクイック−ダンプ−リンス(QDR)を行った。次の工程は、4%のKOHと残部のDI水からなる浴での、80℃、40分間のテクスチャ形成であった。IPAの添加は行わなかった。試験片の反射率を測定した。300〜830nmの波長範囲での加重平均の反射率は、17.8%であることが分かった。図9は、例5に記載した処理によって作製されたウェハーのトップダウンSEM写真であり、表面にわたってピラミッドの被覆が均一であることを示している。
IPA濃度の反射率への影響を、配合物1を用いたテクスチャ形成前処理の有無で評価した。ウェハーを、次の条件の下で処理した:
プロセスE:(i)20wt%のKOH溶液を用いた、10分、65℃でのソーダメージ除去;(ii)室温での3分のDI水を用いたオーバーフローリンス;(iii)DI水中での4wt%のKOH、及び0.25wt%、0.5wt%、1wt%又は2wt%のイソプロパノール、残部のDI水を用いたテクスチャ形成;及び(iv)室温での3分のDI水を用いたオーバーフローリンス。
プロセスF:(i)20wt%のKOH溶液を用いた、10分、65℃でのソーダメージ除去;(ii)室温での3分のDI水を用いたオーバーフローリンス;(iii)10分、80℃での配合物1への浸漬;(iv)ウェットベンチでのDI水を用いた1サイクルのクイック−ダンプ−リンス(QDR);(v)DI水中での4wt%のKOH、及び0.25wt%、0.5wt%、1wt%又は2wt%のイソプロパノール、残部のDI水を用いたテクスチャ形成;(v)室温での3分のDI水を用いたオーバーフローリンス。
単結晶シリコンウェハーの試験片(3cm×5cm)を、次のプロセス順序のそれぞれで、別々に処理した。
プロセスG:(i)20%のKOH溶液における、5分、80℃でのソーダメージ除去、それに続く6分のDI水リンス;(ii)4%のKOH及び2%のイソプロパノール(IPA)を含有する溶液における、80℃、様々な時間でのテクスチャ形成、それに続く6分のDI水リンス(入替え速度は約0.66容器体積/分)。
プロセスH:(i)5分、80℃での配合物1への浸漬、それに続く6分のDI水リンス(入替え速度は約0.66容器体積/分);(ii)20%のKOH溶液における、5分、80でのソーダメージ除去、それに続く6分のDI水リンス;(iii)4%のKOH及び2%のイソプロパノール(IPA)を含有する溶液における、80℃、様々な時間でのテクスチャ形成、それに続く6分のDI水リンス。
表6は、泡止め剤又は泡止めとも呼ばれる消泡剤Dow Antifoam 1430を含有する、配合物29〜33の組成を与える。Dow Antifoam 1430は、Dow Chemicalsによって製造されている商標で守られたシリコーンエマルション(シリコーン界面活性剤)である。泡止め化合物を添加して、配合物中に発泡性の界面活性剤を用いるプロセスで生成される泡の体積を減らす。泡の大きな体積は、泡がプロセスタンクから溢れる場合があり、プロセス溶液の処分で問題を生じる場合があるので、望ましくない場合がある。主に泡の制御のためにシリコーン泡止め剤(シリコーン界面活性剤)を使うが、これは予期せず、ピラミッドのサイズを小さくすることについて利益を与える。
(i)配合物1及び29〜33の1つへの、5分間、80℃でのテクスチャ形成前浸漬、それに続く6分のDI水のオーバーフローリンス;及び(ii)3%のKOH及び4%のIPA溶液における、15分間、80℃でのテクスチャ形成。
単結晶シリコンウェハーの試験片(3cm×5cm)を、次のプロセス順序で処理した:
(i)20wt%のKOH溶液における、5分、80℃でのソーダメージ除去、それに続く6分のDI水リンス;(2)配合物34〜36への、5分間、80℃での浸漬、それに続く6分のDI水リンス(入替え速度は約0.66容器体積/分);(3)4wt%のKOH及び2wt%のイソプロパノール(IPA)を含有する溶液における、5分間、80℃でのテクスチャ形成、それに続く6分のDI水リンス。
配合物35は、2wt%のラウレス硫酸ナトリウム(2エトキシレート基)(Rhodapex(商標) ES−2、Rhodia Corporation製)であった。
配合物36は、2wt%のN,N−ジメチル−N−ドデシルグリシンベタイン、N−(アルキルC10〜C16)−N,N−ジメチルグリシンベタイン(Empigen(商標) BB洗剤、Sigma Aldrich Corporation)であった。
配合物37は、2wt%のオレイン酸スルホナート(Oleic Sulfonate)(Calfoam(商標)OS−45S、Pilot Chemicals)であった。
Claims (19)
- 1種以上の界面活性剤を含む、シリコンウェハーをテクスチャ形成するためのテクスチャ形成前処理組成物。
- 一種以上のアニオン性界面活性剤、カチオン性界面活性剤、非イオン性界面活性剤、及び双性イオン性界面活性剤、又はこれらの混合物を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、アルキルフェノールエトキシレート、ポリオキシエチレン化ポリオキシプロピレングリコール、ポリオキシエチレン化メルカプタン、長鎖カルボン酸エステル、天然脂肪酸のグリセリンエステル及びポリグリセリンエステル、プロピレングリコールエステル、ソルビトールエステル、ポリオキシエチレン化ソルビトールエステル、ポリオキシエチレングリコールエステル、ポリオキシエチレン化脂肪酸、アルカノールアミド、アセチレングリコール、ポリオキシエチレン化シリコーン、n−アルキルピロリドン、アルキルポリグリコシド、シリコーン界面活性剤及びフルオロケミカル界面活性剤、オクチルフェノールエトキシレート、ノニルフェノールエトキシレート、アセチレンジオール型界面活性剤、アルコールエトキシレート、フェニルエトキシレート、アミンエトキシレート、グルコシド、グルカミド、ポリエチレングリコール、及びポリ(エチレングリコール−コ−プロピレングリコール)からなる群より選択される少なくとも1種の界面活性剤、又はこれらの混合物を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、直鎖脂肪酸及び/若しくはこれらの塩、ココナツオイル脂肪酸誘導体、トールオイル酸誘導体、サルコシド、アセチル化ポリペプチド、リグニンスルホン酸、N−アシル−n−アルキルタウリナート、石油スルホナート、パラフィンスルホナート、スルホコハク酸エステル、アルキルナフタレンスルホナート、イセチオナート、硫酸エステル、硫酸直鎖第一級アルコール、硫酸ポリオキシエチレン化直鎖アルコール、硫酸トリグリセリドオイル、リン酸エステル、ポリリン酸エステル、及び過フッ素化アニオン性界面活性剤からなる群より選択される少なくとも1種の界面活性剤、又はこれらの混合物を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、長鎖アミン及びそれらの塩、ジアミン及びポリアミン並びにそれらの塩、四級アンモニウム塩、ポリオキシエチレン化長鎖アミン、四級化ポリオキシエチレン化(POE)長鎖アミン及びアミンオキシド、単純なアミノ酸のN−アルキル誘導体、グリシン、ベタイン、アミノプロピオン酸、イミダゾリン、及びスルホベタインからなる群より選択される少なくとも1種の界面活性剤、又はこれらの混合物を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、直鎖アルキルベンゼンスルホナート(LAS)、第二級アリルベンゼンスルホナート、高級アルコールスルファート(FAS)、第二級アルカンスルホナート(SAS)、高級アルコールエーテルスルファート(FAES)、α−オレフィンスルホナート、アルキルベタイン界面活性剤、及びシリコーン界面活性剤からなる群より選択される少なくとも1種の界面活性剤を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、第二級アルカンスルファート、ラウリルスルファート、ラウリルエーテルスルファート及びN−(アルキルC10〜C16)−N,N−ジメチルグリシンベタインからなる群より選択される少なくとも1種の界面活性剤、又はこれらの混合物を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 1種以上の有機酸、1種以上の随意の塩基、1種以上の随意の泡止め剤及び1種以上の随意の防食剤をさらに含む、請求項7に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、次の構造を有する界面活性剤を含む、請求項1に記載のテクスチャ形成前処理組成物:
- シリコーン界面活性剤をさらに含む、請求項9に記載のテクスチャ形成前処理組成物。
- 前記界面活性剤が、1種以上の第二級アルカンスルホナート界面活性剤を含む、請求項1に記載のテクスチャ形成前処理組成物。
- 前記1種以上の界面活性剤が、前記組成物の全重量の0.01wt%〜30wt%で前記組成物中に存在し、かつ前記組成物がさらに水を含有している、請求項1に記載のテクスチャ形成前処理組成物。
- 次の工程を含む、シリコンウェハーのテクスチャ形成方法:
前記ウェハーを、1種以上の界面活性剤を含むテクスチャ形成前処理組成物で濡らす工程。 - 次の工程を含む、シリコンウェハーをテクスチャ形成法:
前記ウェハーを、一種以上のアニオン性界面活性剤、カチオン性界面活性剤、非イオン性界面活性剤、及び双性イオン性界面活性剤又はこれらの混合物を含むテクスチャ形成前処理組成物で濡らす工程。 - 前記1種以上の界面活性剤が、直鎖アルキルベンゼンスルホナート(LAS)、第二級アルキルベンゼンスルホナート、高級アルコールスルファート(FAS)、第二級アルカンスルホナート(SAS)、高級アルコールエーテルスルファート(FAES)、α−オレフィンスルホナート、アルキルベタイン界面活性剤、及びシリコーン界面活性剤からなる群より選択される少なくとも1種の界面活性剤、又はこれらの混合物を含む、請求項13に記載の方法。
- さらに次の工程を含む、請求項14に記載の方法:
前記ウェハーをテクスチャ形成前処理組成物で濡らす前記工程の後で、前記ウェハーをエッチング組成物で濡らす工程。 - 前記ウェハーをリンス溶液でリンスする工程を、2つの前記濡らす工程の間にさらに含む、請求項16に記載の方法。
- 前記ウェハーを、ソーダメージ除去組成物又は前洗浄組成物で濡らす工程を、いずれかの濡らす工程の前にさらに含む、請求項16に記載の方法。
- 前記エッチング組成物に、界面活性剤が実質的に存在しない、請求項18に記載の方法。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41699810P | 2010-11-24 | 2010-11-24 | |
US61/416,998 | 2010-11-24 | ||
US201161530760P | 2011-09-02 | 2011-09-02 | |
US61/530,760 | 2011-09-02 | ||
US13/296,836 US20120295447A1 (en) | 2010-11-24 | 2011-11-15 | Compositions and Methods for Texturing of Silicon Wafers |
US13/296,836 | 2011-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2012114449A true JP2012114449A (ja) | 2012-06-14 |
Family
ID=45092251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011271710A Ceased JP2012114449A (ja) | 2010-11-24 | 2011-11-24 | シリコンウェハーのテクスチャ形成用の組成物及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120295447A1 (ja) |
EP (1) | EP2458622A3 (ja) |
JP (1) | JP2012114449A (ja) |
KR (1) | KR101362913B1 (ja) |
CN (1) | CN102479698A (ja) |
SG (1) | SG181267A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014013895A (ja) * | 2012-06-27 | 2014-01-23 | Rohm & Haas Electronic Materials Llc | 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化 |
WO2014064769A1 (ja) * | 2012-10-23 | 2014-05-01 | 三洋電機株式会社 | 太陽電池 |
JP2014203835A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社トクヤマ | テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット |
WO2015041214A1 (ja) * | 2013-09-19 | 2015-03-26 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JP2015201630A (ja) * | 2014-03-29 | 2015-11-12 | フアインポリマーズ株式会社 | 電子部品用処理液および電子部品の製造方法 |
KR101613541B1 (ko) | 2013-09-04 | 2016-04-19 | 창쩌우 스추앙 에너지 테크놀로지 리미티드 코포레이션 | 단결정 실리콘 웨이퍼 텍스처링 첨가제 및 그 사용 방법 |
JP2016058647A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社東芝 | エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液 |
WO2016063881A1 (ja) * | 2014-10-21 | 2016-04-28 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JPWO2014024414A1 (ja) * | 2012-08-10 | 2016-07-25 | 第一工業製薬株式会社 | テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法 |
WO2017188177A1 (ja) * | 2016-04-27 | 2017-11-02 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JP7210371B2 (ja) | 2019-05-08 | 2023-01-23 | グローリー株式会社 | 硬貨処理装置 |
Families Citing this family (77)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008056086A1 (de) * | 2008-11-06 | 2010-05-12 | Gp Solar Gmbh | Additiv für alkalische Ätzlösungen, insbesondere für Texturätzlösungen sowie Verfahren zu dessen Herstellung |
DE102009028762A1 (de) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Verfahren zum Ätzen von Siliziumoberflächen |
US20130130508A1 (en) * | 2011-09-02 | 2013-05-23 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
KR101649060B1 (ko) * | 2012-03-12 | 2016-08-17 | 미쓰비시덴키 가부시키가이샤 | 태양전지 셀의 제조 방법 |
US20130316538A1 (en) * | 2012-05-23 | 2013-11-28 | International Business Machines Corporation | Surface morphology generation and transfer by spalling |
CN102751384A (zh) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | 一种晶体硅表面织构方法 |
CN102978710A (zh) * | 2012-08-13 | 2013-03-20 | 杭州道乐太阳能技术有限公司 | 一种硅太阳电池表面陷光结构及制备方式 |
CN102877135B (zh) * | 2012-09-07 | 2015-11-25 | 湖州三峰能源科技有限公司 | 单晶硅片碱性环保型无醇制绒液的添加剂及其使用方法 |
WO2014064929A1 (ja) * | 2012-10-23 | 2014-05-01 | 三洋電機株式会社 | 太陽電池 |
CN102925984A (zh) * | 2012-11-14 | 2013-02-13 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 单晶硅片的制绒液及其制备方法 |
CN102943307A (zh) * | 2012-11-27 | 2013-02-27 | 韩华新能源(启东)有限公司 | 单晶硅无醇制绒添加剂 |
CN104342702A (zh) * | 2013-08-05 | 2015-02-11 | 南京科乃迪科环保科技有限公司 | 一种用于单晶硅或多晶硅酸性制绒的辅助化学组合物及其应用 |
CN103413759B (zh) * | 2013-08-07 | 2018-08-10 | 上饶光电高科技有限公司 | 一种多晶硅片的制绒方法 |
US20150040983A1 (en) * | 2013-08-07 | 2015-02-12 | Solarworld Industries America, Inc. | Acidic etching process for si wafers |
US9291910B2 (en) * | 2013-09-27 | 2016-03-22 | Dynaloy, Llc | Aqueous solution and process for removing substances from substrates |
DE102014001363B3 (de) | 2014-01-31 | 2015-04-09 | Technische Universität Bergakademie Freiberg | Verfahren zur Erzeugung von Texturen oder von Polituren auf der Oberfläche von monokristallinen Siliciumwafern |
EP2933843A1 (en) * | 2014-04-17 | 2015-10-21 | Total Marketing Services | Solar cell and method for manufacturing such a solar cell |
CN104120495A (zh) * | 2014-07-10 | 2014-10-29 | 上海应用技术学院 | 一种用于单晶硅表面织构化的制绒液及其制备方法 |
CN105576074A (zh) * | 2014-10-08 | 2016-05-11 | 上海神舟新能源发展有限公司 | 一种n型双面电池的湿法刻蚀方法 |
CN104404628B (zh) * | 2014-11-14 | 2017-01-04 | 大连理工大学 | 一类用于多晶硅制绒的表面活性剂复配物,含该复配物的制绒液及制绒方法 |
CN104576831B (zh) * | 2014-12-31 | 2016-10-12 | 江苏顺风光电科技有限公司 | 一种单晶硅片无醇制绒工艺及其制绒添加剂 |
US10333012B2 (en) * | 2015-03-24 | 2019-06-25 | Kaneka Corporation | Method for manufacturing crystalline silicon substrate for solar cell, method for manufacturing crystalline silicon solar cell, and method for manufacturing crystalline silicon solar cell module |
CN105226113B (zh) * | 2015-07-09 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池的绒面结构及其制备方法 |
EP3139416B1 (en) * | 2015-09-07 | 2020-10-28 | IMEC vzw | Texturing monocrystalline silicon substrates |
KR102468776B1 (ko) | 2015-09-21 | 2022-11-22 | 삼성전자주식회사 | 폴리실리콘 습식 식각용 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
CN105839192A (zh) * | 2016-04-28 | 2016-08-10 | 吕铁铮 | 预处理硅片湿法制绒的方法 |
CN105810761B (zh) * | 2016-04-29 | 2018-07-27 | 南京工业大学 | 一种金刚线切割多晶硅片的制绒方法 |
CN107924836B (zh) * | 2016-05-26 | 2021-09-21 | 南京中云新材料有限公司 | 一种单晶硅片表面织构化的方法 |
CN106222755A (zh) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | 用于多晶硅片制绒的添加剂及其应用方法 |
KR102595547B1 (ko) * | 2016-11-01 | 2023-10-30 | 주식회사 이엔에프테크놀로지 | 실리콘 식각액 조성물 |
TR201620039A1 (tr) * | 2016-12-29 | 2018-07-23 | Selcuk Yerci | Küçük boyutlu doku morfoloji̇si̇ne katki sağlayan bi̇r lazerli̇ isil i̇şlem adimi kullanilarak gerçekleşti̇ri̇len bi̇r yüzey dokulandirma yöntemi̇ |
CN107046072A (zh) * | 2017-04-20 | 2017-08-15 | 通威太阳能(合肥)有限公司 | 一种提高太阳能电池板绒面均匀度的多晶制绒工艺 |
CN107747133A (zh) * | 2017-10-27 | 2018-03-02 | 德清丽晶能源科技有限公司 | 一种电池单晶硅片的制绒方法 |
CN107936849B (zh) * | 2017-11-10 | 2020-09-15 | 苏州晶瑞化学股份有限公司 | 一种抛光液及其制备方法和应用 |
CN107858756B (zh) * | 2017-12-02 | 2019-12-24 | 常州高特新材料股份有限公司 | 一种单晶硅制绒添加剂及其应用 |
CN108504289A (zh) * | 2018-04-03 | 2018-09-07 | 苏州晶瑞化学股份有限公司 | 一种金刚线切割多晶硅片制绒抛光调控剂 |
CN110644049A (zh) * | 2018-06-26 | 2020-01-03 | 上海硅洋新能源科技有限公司 | 金刚线多晶硅片制绒添加剂及金刚线多晶硅片制绒刻蚀液 |
CN110872729B (zh) * | 2018-08-30 | 2021-07-20 | 比亚迪股份有限公司 | 金刚线切割多晶硅片的制绒挖孔添加剂、制绒沉银挖孔液、硅片以及太阳能电池 |
IL281436B2 (en) * | 2018-09-12 | 2024-05-01 | Fujifilm Electronic Mat Usa Inc | Etching mixes |
US11037792B2 (en) * | 2018-10-25 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution |
CN111192932B (zh) * | 2018-11-14 | 2021-05-04 | 苏州纳捷森光电技术有限公司 | 一种具有图案化表面的硅结构、制备方法及太阳能电池 |
CN109713057A (zh) * | 2018-12-18 | 2019-05-03 | 武汉风帆电化科技股份有限公司 | 一种多晶硅湿法制绒工艺 |
CN109355711A (zh) * | 2018-12-18 | 2019-02-19 | 张占香 | 一种用于金刚线切割多晶硅片的制绒添加剂及其应用 |
CN109713086B (zh) * | 2018-12-19 | 2020-09-11 | 北京合德丰材料科技有限公司 | 一种非金属黑硅制绒液以及利用该制绒液进行制绒的方法 |
CN109686818A (zh) * | 2018-12-25 | 2019-04-26 | 浙江晶科能源有限公司 | 一种制备单晶硅倒金字塔绒面的方法 |
CN111321471B (zh) * | 2019-03-25 | 2021-05-11 | 杭州飞鹿新能源科技有限公司 | 一种低减重的单晶硅制绒添加剂及其应用 |
CN110396725A (zh) * | 2019-07-10 | 2019-11-01 | 天津爱旭太阳能科技有限公司 | 一种单晶硅片的制绒添加剂及其应用 |
CN114555611B (zh) | 2019-08-22 | 2024-07-30 | 艾德凡斯化学公司 | 具有表面活性性质的氨基酸的硅氧烷衍生物 |
CN110846721A (zh) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | 一种含多元醇和peg的单晶硅制绒添加剂配方 |
CN112812776A (zh) * | 2019-11-15 | 2021-05-18 | 苏州阿特斯阳光电力科技有限公司 | 一种腐蚀液及其制备方法和应用 |
CN110922970A (zh) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | 一种perc电池背抛光添加剂及工艺 |
FR3105583B1 (fr) * | 2019-12-18 | 2023-06-30 | Commissariat Energie Atomique | Substrat en silicium cristallin comprenant une surface structurée |
EP4077552A1 (en) | 2019-12-19 | 2022-10-26 | AdvanSix Resins & Chemicals LLC | Surfactants for inks, paints, and adhesives |
AU2020407386B2 (en) | 2019-12-19 | 2024-01-04 | Advansix Resins & Chemicals Llc | Surfactants for agricultural products |
BR112022011622A2 (pt) | 2019-12-19 | 2022-08-23 | Advansix Resins & Chemicals Llc | Formulação para um xampu, formulação para um condicionador de cabelo, formulação para um agente de limpeza, e formulação para uma pasta de dente |
AU2020404900B2 (en) | 2019-12-20 | 2023-08-17 | Advansix Resins & Chemicals Llc | Surfactants for cleaning products |
KR20220114639A (ko) | 2019-12-20 | 2022-08-17 | 어드밴식스 레진즈 앤드 케미컬즈 엘엘씨 | 건강관리 제품에 사용하기 위한 계면활성제 |
KR20210084018A (ko) * | 2019-12-27 | 2021-07-07 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
CN111117623A (zh) * | 2019-12-29 | 2020-05-08 | 武汉风帆电化科技股份有限公司 | 一种酸性刻蚀辅助剂及其制备方法 |
US11542428B2 (en) | 2019-12-31 | 2023-01-03 | Advansix Resins & Chemicals Llc | Surfactants for oil and gas production |
PL4101009T3 (pl) * | 2020-02-05 | 2024-08-19 | Advansix Resins & Chemicals Llc | Środki powierzchniowo czynne dla elektroniki |
BR112023000525A2 (pt) | 2020-07-13 | 2023-01-31 | Advansix Resins & Chemicals Llc | Tensoativos de aminoácidos ramificados para produtos eletrônicos |
CN113136144A (zh) * | 2021-03-18 | 2021-07-20 | 武汉风帆电化科技股份有限公司 | 一种用于晶硅片快速碱抛光的抛光剂及其应用方法 |
CN113529174A (zh) * | 2021-07-01 | 2021-10-22 | 常州时创能源股份有限公司 | 一种单晶硅片的制绒方法及应用 |
CN113502163B (zh) * | 2021-09-10 | 2021-12-03 | 杭州晶宝新能源科技有限公司 | 用于形成太阳电池背结构的化学助剂、其制备方法及应用 |
CN113980747B (zh) * | 2021-11-10 | 2023-08-25 | 重庆臻宝科技股份有限公司 | 一种半导体材料表面脱脂处理的清洗剂 |
CN114093760A (zh) * | 2021-11-22 | 2022-02-25 | 锦州神工半导体股份有限公司 | 一种改善硅片酸腐蚀平坦度的方法 |
CN114420774A (zh) * | 2021-11-29 | 2022-04-29 | 江苏科来材料科技有限公司 | 一种晶硅电池的制绒工艺 |
CN114350265A (zh) * | 2021-11-30 | 2022-04-15 | 嘉兴市小辰光伏科技有限公司 | 一种单晶硅碱抛光添加剂及其使用方法 |
CN114292708A (zh) * | 2021-11-30 | 2022-04-08 | 嘉兴市小辰光伏科技有限公司 | 用于太阳能电池制绒前清洗的硅片清洗剂及使用方法 |
CN114891509B (zh) * | 2021-12-14 | 2023-05-05 | 湖北兴福电子材料股份有限公司 | 一种高选择性的缓冲氧化物蚀刻液 |
CN114316804A (zh) * | 2021-12-15 | 2022-04-12 | 嘉兴市小辰光伏科技有限公司 | 一种改善单晶硅碱抛光外观问题的添加剂及其抛光工艺 |
KR102400265B1 (ko) * | 2021-12-22 | 2022-05-20 | 램테크놀러지 주식회사 | 증류를 이용한 불산계 혼산액 분석 방법 |
KR102400266B1 (ko) * | 2021-12-22 | 2022-05-20 | 램테크놀러지 주식회사 | 추출을 이용한 불산계 혼산액 분석 방법 |
CN113980580B (zh) * | 2021-12-24 | 2022-04-08 | 绍兴拓邦新能源股份有限公司 | 一种单晶硅片的碱刻蚀抛光方法 |
CN115873509A (zh) * | 2022-11-23 | 2023-03-31 | 嘉兴市小辰光伏科技有限公司 | 一种高平整度硅片的碱抛光添加剂以及抛光方法 |
CN115820256B (zh) * | 2022-11-25 | 2024-05-24 | 嘉兴市小辰光伏科技有限公司 | 用于提升太阳能电池绒面均匀性的添加剂及其使用工艺 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010226089A (ja) * | 2009-01-14 | 2010-10-07 | Rohm & Haas Electronic Materials Llc | 半導体ウェハをクリーニングする方法 |
JP2011205058A (ja) * | 2009-12-17 | 2011-10-13 | Rohm & Haas Electronic Materials Llc | 半導体基体をテクスチャ化する改良された方法 |
Family Cites Families (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4137123A (en) | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
JPS6039176A (ja) * | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
US5911889A (en) * | 1995-05-11 | 1999-06-15 | Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Aktiengesellschaft | Method of removing damaged crystal regions from silicon wafers |
ZA989155B (en) * | 1997-10-10 | 1999-04-12 | Procter & Gamble | Mixed surfactant system |
DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
US6562726B1 (en) * | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
JP3587373B2 (ja) * | 1999-09-10 | 2004-11-10 | キヤノン株式会社 | メソ構造体薄膜及びその製造方法 |
US6303506B1 (en) * | 1999-09-30 | 2001-10-16 | Infineon Technologies Ag | Compositions for and method of reducing/eliminating scratches and defects in silicon dioxide during CMP process |
WO2002051961A2 (en) * | 2000-12-22 | 2002-07-04 | Interuniversitair Microelektronica Centrum (Imec) | Composition comprising an oxidizing and complexing compound |
JP2002331456A (ja) * | 2001-05-08 | 2002-11-19 | Kurita Water Ind Ltd | 研磨材の回収装置 |
JP3664669B2 (ja) * | 2001-06-27 | 2005-06-29 | 株式会社荏原製作所 | 電解めっき装置 |
US6969688B2 (en) * | 2002-10-08 | 2005-11-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet etchant composition and method for etching HfO2 and ZrO2 |
US6900167B2 (en) * | 2002-10-09 | 2005-05-31 | Ecolab, Inc. | Solid composition with rheology modifier |
US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
JP4209178B2 (ja) * | 2002-11-26 | 2009-01-14 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
WO2005001016A1 (en) * | 2003-06-27 | 2005-01-06 | Interuniversitair Microelektronica Centrum (Imec) | Semiconductor cleaning solution |
US7432233B2 (en) * | 2003-12-18 | 2008-10-07 | Interuniversitair Microelektronica Centrum (Imec) | Composition and method for treating a semiconductor substrate |
US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
CN1690120A (zh) * | 2004-03-01 | 2005-11-02 | 三菱瓦斯化学株式会社 | 具有高减震能力的树脂组合物 |
US20060199399A1 (en) * | 2005-02-22 | 2006-09-07 | Muscat Anthony J | Surface manipulation and selective deposition processes using adsorbed halogen atoms |
JP4914589B2 (ja) * | 2005-08-26 | 2012-04-11 | 三菱電機株式会社 | 半導体製造装置、半導体製造方法および半導体装置 |
CN1983644A (zh) | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | 制作单晶硅太阳电池绒面的方法 |
CN1983645A (zh) | 2005-12-13 | 2007-06-20 | 上海太阳能科技有限公司 | 多晶硅太阳电池绒面的制备方法 |
DE102006000882A1 (de) * | 2006-01-04 | 2007-07-05 | Henkel Kgaa | Reinigung gesägter Siliciumscheiben |
ATE514193T1 (de) | 2006-08-19 | 2011-07-15 | Univ Konstanz | Verfahren zum texturieren von siliziumwafern zur herstellung von solarzellen |
US8741066B2 (en) * | 2007-02-16 | 2014-06-03 | Akrion Systems, Llc | Method for cleaning substrates utilizing surface passivation and/or oxide layer growth to protect from pitting |
JP5021427B2 (ja) | 2007-11-13 | 2012-09-05 | 国立大学法人 新潟大学 | テクスチャー形成用エッチング液 |
DE102007058829A1 (de) | 2007-12-06 | 2009-06-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Textur- und Reinigungsmedium zur Oberflächenbehandlung von Wafern und dessen Verwendung |
CN101217173A (zh) | 2008-01-10 | 2008-07-09 | 宁波杉杉尤利卡太阳能科技发展有限公司 | 一种新型的单面去扩散层方法 |
KR20100125448A (ko) | 2008-03-25 | 2010-11-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정성 태양 전지들을 위한 표면 세정 및 텍스처링 프로세스 |
KR101168589B1 (ko) * | 2008-03-26 | 2012-07-30 | 엘지전자 주식회사 | 계면 활성제를 이용한 실리콘 태양전지의 텍스처링 방법 |
JP5152851B2 (ja) * | 2008-04-17 | 2013-02-27 | 国立大学法人東北大学 | 半導体装置の製造方法 |
FR2931475B1 (fr) * | 2008-05-23 | 2010-06-04 | Inst Francais Du Petrole | Procede de craquage d'ethers alkyl tertiaires utilisant un materiau hybride organique-inorganique mesostructure. |
US7989346B2 (en) * | 2009-07-27 | 2011-08-02 | Adam Letize | Surface treatment of silicon |
CN101634026A (zh) | 2009-08-26 | 2010-01-27 | 北京市太阳能研究所有限公司 | 一种制备单晶硅绒面的腐蚀液及方法 |
CN101634027A (zh) | 2009-08-26 | 2010-01-27 | 北京市太阳能研究所有限公司 | 一种制备单晶硅绒面的方法 |
US20120186571A1 (en) * | 2009-10-16 | 2012-07-26 | Linda Yi-Ping Zhu | Aqueous Cutting Fluid for Use with a Diamond Wiresaw |
US8759231B2 (en) * | 2009-12-29 | 2014-06-24 | Intermolecular, Inc. | Silicon texture formulations with diol additives and methods of using the formulations |
JP2013534547A (ja) * | 2010-06-09 | 2013-09-05 | ビーエーエスエフ ソシエタス・ヨーロピア | 水性アルカリ性エッチング及び洗浄組成物、及びシリコン基材の表面を処理するための方法 |
US8883701B2 (en) * | 2010-07-09 | 2014-11-11 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
US8445309B2 (en) * | 2010-08-20 | 2013-05-21 | First Solar, Inc. | Anti-reflective photovoltaic module |
US8465662B2 (en) * | 2010-09-21 | 2013-06-18 | Techno Semichem Co., Ltd. | Composition for wet etching of silicon dioxide |
US8637405B2 (en) * | 2011-06-21 | 2014-01-28 | International Business Machines Corporation | Silicon surface texturing method for reducing surface reflectance |
US20130130508A1 (en) * | 2011-09-02 | 2013-05-23 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
-
2011
- 2011-11-15 US US13/296,836 patent/US20120295447A1/en not_active Abandoned
- 2011-11-23 SG SG2011086857A patent/SG181267A1/en unknown
- 2011-11-24 EP EP11190545.1A patent/EP2458622A3/en not_active Withdrawn
- 2011-11-24 KR KR1020110123862A patent/KR101362913B1/ko not_active IP Right Cessation
- 2011-11-24 JP JP2011271710A patent/JP2012114449A/ja not_active Ceased
- 2011-11-24 CN CN2011103942025A patent/CN102479698A/zh active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010226089A (ja) * | 2009-01-14 | 2010-10-07 | Rohm & Haas Electronic Materials Llc | 半導体ウェハをクリーニングする方法 |
JP2011205058A (ja) * | 2009-12-17 | 2011-10-13 | Rohm & Haas Electronic Materials Llc | 半導体基体をテクスチャ化する改良された方法 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014013895A (ja) * | 2012-06-27 | 2014-01-23 | Rohm & Haas Electronic Materials Llc | 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化 |
JPWO2014024414A1 (ja) * | 2012-08-10 | 2016-07-25 | 第一工業製薬株式会社 | テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法 |
WO2014064769A1 (ja) * | 2012-10-23 | 2014-05-01 | 三洋電機株式会社 | 太陽電池 |
JPWO2014064769A1 (ja) * | 2012-10-23 | 2016-09-05 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP2014203835A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社トクヤマ | テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット |
KR101613541B1 (ko) | 2013-09-04 | 2016-04-19 | 창쩌우 스추앙 에너지 테크놀로지 리미티드 코포레이션 | 단결정 실리콘 웨이퍼 텍스처링 첨가제 및 그 사용 방법 |
WO2015041214A1 (ja) * | 2013-09-19 | 2015-03-26 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JPWO2015041214A1 (ja) * | 2013-09-19 | 2017-03-02 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JP2015201630A (ja) * | 2014-03-29 | 2015-11-12 | フアインポリマーズ株式会社 | 電子部品用処理液および電子部品の製造方法 |
JP2016058647A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社東芝 | エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液 |
US9701902B2 (en) | 2014-09-11 | 2017-07-11 | Kabushiki Kaisha Toshiba | Etching method, method of manufacturing article, and etching solution |
WO2016063881A1 (ja) * | 2014-10-21 | 2016-04-28 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JPWO2016063881A1 (ja) * | 2014-10-21 | 2017-08-31 | 攝津製油株式会社 | 半導体基板用エッチング液 |
US10106736B2 (en) | 2014-10-21 | 2018-10-23 | Settsu Oil Mill., Inc. | Etching agent for semiconductor substrate |
WO2017188177A1 (ja) * | 2016-04-27 | 2017-11-02 | 攝津製油株式会社 | 半導体基板用エッチング液 |
JP7210371B2 (ja) | 2019-05-08 | 2023-01-23 | グローリー株式会社 | 硬貨処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN102479698A (zh) | 2012-05-30 |
SG181267A1 (en) | 2012-06-28 |
EP2458622A3 (en) | 2013-05-22 |
US20120295447A1 (en) | 2012-11-22 |
EP2458622A2 (en) | 2012-05-30 |
KR20120059378A (ko) | 2012-06-08 |
KR101362913B1 (ko) | 2014-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101362913B1 (ko) | 실리콘 웨이퍼의 텍스쳐링을 위한 조성물 및 방법 | |
US20130130508A1 (en) | Compositions and Methods for Texturing of Silicon Wafers | |
KR101101028B1 (ko) | Cmp후 세정을 위한 포뮬레이션 및 방법 | |
TWI498421B (zh) | 水性鹼性蝕刻與清潔組合物及處理矽基板表面之方法 | |
US20110275222A1 (en) | Silicon Texture Formulations With Diol Additives And Methods of Using The Formulations | |
JP6165442B2 (ja) | 高度な半導体応用のためのポストイオン注入フォトレジスト剥離用組成物 | |
KR102689854B1 (ko) | 전자기기를 위한 계면활성제 | |
TWI754777B (zh) | 剝除劑溶液及使用剝除劑溶液的方法 | |
CN103314448A (zh) | 用于高度掺杂的半导体层湿化学蚀刻的方法 | |
US7521407B2 (en) | Remover composition | |
WO2012144461A1 (ja) | エッチング液組成物およびエッチング方法 | |
WO2013021296A1 (en) | Aqueous alkaline compositions and method for treating the surface of silicon substrates | |
CN104562011B (zh) | 多晶硅片的制绒辅助剂及制绒工艺 | |
CN115461429A (zh) | 用于电子产品的表面活性剂 | |
US20120090670A1 (en) | Cleaning solution composition for a solar cell | |
JP6176975B2 (ja) | 太陽電池用基板の製造方法 | |
EP4179056A2 (en) | Branched amino acid surfactants for electronics products | |
US20120129344A1 (en) | Process and apparatus for removal of contaminating material from substrates | |
JP2013243363A (ja) | シリコンウェハをテクスチャ形成するための組成物及び方法 | |
US20180273880A1 (en) | Silicon wafer cleaner and method for cleaning silicon wafer | |
US20120187336A1 (en) | Conditioning compositions for solar cells | |
TW201224121A (en) | Compositions and methods for texturing of silicon wafers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121009 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121016 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130115 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130118 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130416 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130806 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140204 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140715 |
|
A045 | Written measure of dismissal of application [lapsed due to lack of payment] |
Free format text: JAPANESE INTERMEDIATE CODE: A045 Effective date: 20141125 |