CN105576074A - 一种n型双面电池的湿法刻蚀方法 - Google Patents

一种n型双面电池的湿法刻蚀方法 Download PDF

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CN105576074A
CN105576074A CN201410525546.9A CN201410525546A CN105576074A CN 105576074 A CN105576074 A CN 105576074A CN 201410525546 A CN201410525546 A CN 201410525546A CN 105576074 A CN105576074 A CN 105576074A
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郑飞
张忠卫
石磊
阮忠立
赵晨
赵钰雪
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SHANGHAI SHENZHOU NEW ENERGY DEVELOPMENT Co Ltd
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SHANGHAI SHENZHOU NEW ENERGY DEVELOPMENT Co Ltd
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Priority to AU2015323848A priority patent/AU2015323848B2/en
Priority to JP2017538279A priority patent/JP6553731B2/ja
Priority to EP15849346.0A priority patent/EP3190633A4/en
Priority to US15/028,665 priority patent/US9537037B2/en
Priority to PCT/CN2015/078932 priority patent/WO2016054917A1/zh
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract

本发明涉及一种N型双面电池的湿法刻蚀方法，(1)N型硅片经表面织构化，硼扩散制备PN结后，经过混酸刻蚀边缘及背面，然后进行第一次纯水洗、碱洗、第二次纯水洗、混酸洗，第三次纯水洗，风干；(2)在硅片正面覆盖水膜，然后经过混酸处理，再经过第四次纯水洗、碱洗、第五次纯水洗、混酸洗、第六次纯水洗、风干后，完成对N型双面电池的刻蚀。与现有技术相比，本发明可以完全解决N型双面电池边缘PN结去除不彻底的问题，且可以明显改善背面抛光钝化的效果，进而提升N型双面电池的光电转化效率。

Description

一种N型双面电池的湿法刻蚀方法
技术领域
本发明属于太阳电池技术领域，尤其是涉及一种N型双面电池的湿法刻蚀方法。
背景技术
N型硅片是指硅片中掺入磷。由于N型硅片具有较长的少数载流子寿命，因此做成太阳电池可以获得更高的光电转换效率，近些年N型太阳电池越来越受到关注。另外，N型电池对金属污染的容忍度更强，具有更好的忍耐性能，稳定性强，且N型硅片中掺入的是磷，没有硼-氧对，不存在光致衰减效应，由于N型晶体硅的这些优点，使得N型硅片非常适合制作高效的太阳电池。N型双面电池制作通常的工艺流程为：N型硅片经过表面织构化处理后；经过高温硼扩散后在硅片正面形成PN结；刻蚀去除硅片边缘和背面PN结；背面磷扩散制作N+层；双面沉积减反膜；双面印刷后烧结，最后制得N型双面太阳电池。从上述双面电池工艺过程中可以看出，刻蚀是至关重要的步骤，因为N型双面电池的正面有硼扩散，而背面是磷扩散，不做好边缘PN结绝缘，将导致电池的边缘漏电，严重影响电池的电性能表现。目前双面电池的刻蚀方法有等离子刻蚀和激光刻蚀等方法，但上述两种方法都存在一定的弊端，等离子刻蚀的缺点是存在边缘PN结去除不彻底和机台刻蚀效果不稳定的问题；而激光刻蚀由于设备特点，刻蚀过程会一定程度导致电池的受光面积减少，从而降低双面电池的光电转换效率。
发明内容
本发明的目的就是为了克服上述现有技术存在的缺陷而提供一种增加硅片背面的抛光效果，增加背面的钝化作用，提升电池转换效率的N型双面电池的湿法刻蚀方法。
本发明的目的可以通过以下技术方案来实现：
一种N型双面电池的湿法刻蚀方法，采用以下步骤：
(1)N型硅片经表面织构化，硼扩散制备PN结后，经混酸刻蚀边缘及背面，然后进行第一次纯水洗、碱洗、第二次纯水洗、混酸洗，第三次纯水洗，风干；
(2)在硅片正面覆盖水膜，然后经过混酸处理，再经过第四次纯水洗、碱洗、第五次纯水洗、混酸洗、第六次纯水洗、风干后，完成对N型双面电池的刻蚀。
步骤(1)中刻蚀N型硅片的混酸为HF、HNO3和H2SO4按体积比为1∶2∶1～1∶10∶5构成的混合溶液，其中HF的浓度为49wt％，H2SO4的浓度为99wt％，HNO3的浓度为70wt％，碱洗采用浓度为0.5～15wt％的强碱性溶液，包括氢氧化钠或氢氧化钾溶液，混酸洗采用的混酸溶液为HF和HCl按体积比为0.1～10构成的混合溶液，其中HF的浓度为49wt％，HCl的浓度为37wt％。
步骤(2)中采用纯水在硅片正面覆盖水膜，该水膜完全覆盖硅片的正面，处理硅片的混酸为HF和HNO3按体积比为0.1～10构成的混合溶液，其中HF的浓度为49wt％，HNO3的浓度为70wt％，碱洗采用浓度为0.5～15wt％的强碱性溶液，包括氢氧化钠、氢氧化钾或碳酸钠溶液，混酸洗采用的混酸溶液为HCl和HF按体积比为0.1～10构成的混合溶液，其中HF的浓度为49wt％，HCl的浓度为37wt％。
在实施时，步骤(1)及步骤(2)可以单独实施或重复实施，对N型双面电池进行湿法刻蚀，另外，步骤(1)及步骤(2)在一起实施时还可以更换先后顺序。
与现有技术相比，本发明是在保证电池效率不降低的前提下，解决N型双面电池边缘漏电的问题，通过两次同时运用HNO3的氧化作用及HF的腐蚀作用来实现本发明的目的。且步骤(2)中的混酸腐蚀液可以进一步改善背面抛光钝化的作用，进而提升N型双面电池的光电转化效率。本发明中两个步骤可以独立作为N型双面电池的湿法刻蚀的方案进行实施，更可以结合在一起进行实施，以获得更好的湿法刻蚀效果。
具体实施方式
下面结合具体实施例对本发明进行详细说明。
实施例1
N型硅片经表面织构化，硼扩散制备正面PN结后，经过HF、HNO3和H2SO4的混合水溶液，刻蚀去除边缘及背面PN结，然后经过第一次纯水洗，洗去硅片表面残留的酸液；再经过KOH水溶液清洗，KOH浓度为0.1～15wt％及第二次纯水洗，再混酸(2)洗，混酸(2)中HF和HCl的体积比为3，最后经过纯水洗和风干，完成N型双面电池的湿法刻蚀过程。
从表中的反向漏电数据可以看出，本发明的反向漏电明显小于对比例。
实施例2
N型硅片经表面织构化，硼扩散制备正面PN结后，在硅片表面覆盖一层纯水水膜，然后经过混酸(3)水溶液，HF和HNO3的体积比为0.1～10混刻蚀去除边缘及背面PN结，然后经过第一次纯水洗，洗去硅片表面残留的酸液；再经过KOH水溶液清洗，KOH浓度为0.1～15wt％及第二次纯水洗，再混酸(4)洗，混酸(4)中HF和HCl的体积比为5，最后经过纯水洗和风干，完成N型双面电池的湿法刻蚀过程。
从表中的反向漏电数据可以看出，本发明的反向漏电明显小于对比例。
实施例3
一种N型双面电池的湿法刻蚀方法，采用以下步骤：
(1)N型硅片经表面织构化，硼扩散制备PN结后，经过混酸刻蚀边缘及背面，然后进行第一次纯水洗、碱洗、第二次纯水洗、混酸洗，第三次纯水洗，风干，其中，利用浓度为49wt％的HF、浓度为70wt％的HNO3和浓度为99wt％的H2SO4按体积比为1∶2∶1构成混酸溶液刻蚀N型硅片，碱洗采用浓度为0.5wt％的氢氧化钠溶液，混酸洗采用浓度为49wt％的HF和浓度为37wt％的HCl按体积比为0.1构成的混酸溶液进行处理；
(2)在硅片正面覆盖水膜，然后经过混酸处理，再经过第四次纯水洗、碱洗、第五次纯水洗、混酸洗、第六次纯水洗、风干后，完成对N型双面电池的刻蚀，其中，采用纯水在硅片正面覆盖水膜，该水膜完全覆盖硅片的正面，处理硅片的混酸为浓度为49wt％的HF和浓度为70wt％的HNO3按体积比为0.1构成的混酸溶液，碱洗采用浓度为0.5wt％的氢氧化钾强碱性溶液，混酸洗采用的混酸溶液为浓度为37wt％的HCl和浓度为49wt％的HF按体积比为0.1构成的混酸溶液。
在实施时，步骤(1)及步骤(2)可以单独实施或重复实施，对N型双面电池进行湿法刻蚀。
实施例4
一种N型双面电池的湿法刻蚀方法，采用以下步骤：
(1)N型硅片经表面织构化，硼扩散制备PN结后，经过混酸刻蚀边缘及背面，然后进行第一次纯水洗、碱洗、第二次纯水洗、混酸洗，第三次纯水洗，风干，其中，利用浓度为49wt％的HF、浓度为70wt％的HNO3和浓度为99wt％的H2SO4按体积比为1∶7∶2构成混酸溶液刻蚀N型硅片，碱洗采用浓度为0.5wt％的氢氧化钠溶液，混酸洗采用浓度为49wt％的HF和浓度为37wt％的HCl按体积比为10构成的混酸溶液进行处理；
(2)在硅片正面覆盖水膜，然后经过混酸处理，再经过第四次纯水洗、碱洗、第五次纯水洗、混酸洗、第六次纯水洗、风干后，完成对N型双面电池的刻蚀，其中，采用纯水在硅片正面覆盖水膜，该水膜完全覆盖硅片的正面，处理硅片的混酸为浓度为49wt％的HF和浓度为70wt％的HNO3按体积比为10构成的混酸溶液，碱洗采用浓度为0.5wt％的氢氧化钾强碱性溶液，混酸洗采用的混酸溶液为浓度为37wt％的HCl和浓度为49wt％的HF按体积比为0.5构成的混酸溶液。
在实施时，步骤(1)及步骤(2)可以单独实施或重复实施，对N型双面电池进行湿法刻蚀，步骤(1)及步骤(2)在一起实施时还可以更换先后顺序。

Claims (10)

1.一种N型双面电池的湿法刻蚀方法，其特征在于，该方法采用以下步骤：
(1)N型硅片经表面织构化，硼扩散制备PN结后，经过混酸刻蚀边缘及背面，然后进行第一次纯水洗、碱洗、第二次纯水洗、混酸洗，第三次纯水洗，风干；
(2)在硅片正面覆盖水膜，然后经过混酸处理，再经过第四次纯水洗、碱洗、第五次纯水洗、混酸洗、第六次纯水洗、风干后，完成对N型双面电池的刻蚀。
2.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(1)中刻蚀N型硅片的混酸为HF、HNO3和H2SO4按体积比为1∶2∶1～1∶10∶5构成的混合溶液，其中HF的浓度为49wt％，H2SO4的浓度为99wt％，HNO3的浓度为70wt％。
3.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(1)中的碱洗采用浓度为0.5～15wt％的强碱性溶液，包括氢氧化钠或氢氧化钾溶液。
4.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(1)中的混酸洗采用的混酸溶液为HF和HCl按体积比为0.1～10构成的混合溶液，其中HF的浓度为49wt％，HCl的浓度为37wt％。
5.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(2)中采用纯水在硅片正面覆盖水膜，该水膜完全覆盖硅片的正面。
6.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(2)中处理硅片的混酸为HF和HNO3按体积比为0.1～10构成的混合溶液，其中HF的浓度为49wt％，HNO3的浓度为70wt％。
7.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(2)中的碱洗采用浓度为0.5～15wt％的强碱性溶液，包括氢氧化钠、氢氧化钾或碳酸钠溶液。
8.根据权利要求1所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(2)中的混酸洗采用的混酸溶液为HCl和HF按体积比为0.1～10构成的混合溶液，其中HF的浓度为49wt％，HCl的浓度为37wt％。
9.根据权利要求1-8中任一项所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(1)及步骤(2)可以单独实施或重复实施，对N型双面电池进行湿法刻蚀。
10.根据权利要求9所述的一种N型双面电池的湿法刻蚀方法，其特征在于，步骤(1)及步骤(2)在一起实施时还可以更换先后顺序。
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