JP2012069966A5 - - Google Patents

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Publication number
JP2012069966A5
JP2012069966A5 JP2011232501A JP2011232501A JP2012069966A5 JP 2012069966 A5 JP2012069966 A5 JP 2012069966A5 JP 2011232501 A JP2011232501 A JP 2011232501A JP 2011232501 A JP2011232501 A JP 2011232501A JP 2012069966 A5 JP2012069966 A5 JP 2012069966A5
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JP
Japan
Prior art keywords
active portion
unit cell
electrode
parallel
electrically connected
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Application number
JP2011232501A
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English (en)
Japanese (ja)
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JP2012069966A (ja
JP5797082B2 (ja
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Publication date
Priority claimed from US10/786,962 external-priority patent/US7135747B2/en
Application filed filed Critical
Publication of JP2012069966A publication Critical patent/JP2012069966A/ja
Publication of JP2012069966A5 publication Critical patent/JP2012069966A5/ja
Application granted granted Critical
Publication of JP5797082B2 publication Critical patent/JP5797082B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2011232501A 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス Expired - Lifetime JP5797082B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/786,962 2004-02-25
US10/786,962 US7135747B2 (en) 2004-02-25 2004-02-25 Semiconductor devices having thermal spacers

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2007500749A Division JP5095387B2 (ja) 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス

Publications (3)

Publication Number Publication Date
JP2012069966A JP2012069966A (ja) 2012-04-05
JP2012069966A5 true JP2012069966A5 (enExample) 2012-07-05
JP5797082B2 JP5797082B2 (ja) 2015-10-21

Family

ID=34861881

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007500749A Expired - Lifetime JP5095387B2 (ja) 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス
JP2011232501A Expired - Lifetime JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2007500749A Expired - Lifetime JP5095387B2 (ja) 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス

Country Status (8)

Country Link
US (1) US7135747B2 (enExample)
EP (1) EP1719186B1 (enExample)
JP (2) JP5095387B2 (enExample)
KR (1) KR101132898B1 (enExample)
CN (1) CN1922738A (enExample)
CA (1) CA2554944A1 (enExample)
TW (1) TW200531135A (enExample)
WO (1) WO2005083788A2 (enExample)

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JP2009111217A (ja) 2007-10-31 2009-05-21 Toshiba Corp 半導体装置
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CN102339336A (zh) * 2010-07-22 2012-02-01 沈阳中科微电子有限公司 改善微波/射频功率放大器芯片热失效的设计方法
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US9779988B2 (en) * 2013-12-20 2017-10-03 Nxp Usa, Inc. Semiconductor devices with inner via
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CN104201253B (zh) * 2014-07-10 2017-08-25 中航（重庆）微电子有限公司 一种氮化镓器件及其制造方法
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
CN104617092B (zh) * 2014-11-06 2018-06-22 苏州捷芯威半导体有限公司 一种半导体器件及其制作方法
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
CN105321993B (zh) * 2015-05-27 2019-03-29 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
US9786660B1 (en) 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US9947616B2 (en) 2016-03-17 2018-04-17 Cree, Inc. High power MMIC devices having bypassed gate transistors
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
US10418304B2 (en) * 2017-08-28 2019-09-17 National Technology & Engineering Solutions Of Sandia, Llc Ion-implanted thermal barrier
DE102018113506B4 (de) 2018-06-06 2021-12-30 Semikron Elektronik Gmbh & Co. Kg Volumentleitfähiges Leistungshalbleiterbauelement mit Homogenisierungsstruktur
US10483352B1 (en) * 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
EP3951848A4 (en) * 2019-03-29 2023-01-11 Kabushiki Kaisha Toshiba SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers
US12490512B2 (en) * 2021-02-15 2025-12-02 Panasonic Intellectual Property Management Co., Ltd. High voltage nitride semiconductor device
US12224343B2 (en) * 2021-07-13 2025-02-11 Analog Power Conversion LLC Power device with partitioned active regions

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