JP2007535140A5 - - Google Patents

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Publication number
JP2007535140A5
JP2007535140A5 JP2007500749A JP2007500749A JP2007535140A5 JP 2007535140 A5 JP2007535140 A5 JP 2007535140A5 JP 2007500749 A JP2007500749 A JP 2007500749A JP 2007500749 A JP2007500749 A JP 2007500749A JP 2007535140 A5 JP2007535140 A5 JP 2007535140A5
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JP
Japan
Prior art keywords
active portion
unit cell
electrode
thermal spacer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2007500749A
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English (en)
Japanese (ja)
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JP5095387B2 (ja
JP2007535140A (ja
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Publication date
Priority claimed from US10/786,962 external-priority patent/US7135747B2/en
Application filed filed Critical
Publication of JP2007535140A publication Critical patent/JP2007535140A/ja
Publication of JP2007535140A5 publication Critical patent/JP2007535140A5/ja
Application granted granted Critical
Publication of JP5095387B2 publication Critical patent/JP5095387B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2007500749A 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス Expired - Lifetime JP5095387B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/786,962 US7135747B2 (en) 2004-02-25 2004-02-25 Semiconductor devices having thermal spacers
US10/786,962 2004-02-25
PCT/US2004/038894 WO2005083788A2 (en) 2004-02-25 2004-11-18 Semiconductor devices having thermal spacers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011232501A Division JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Publications (3)

Publication Number Publication Date
JP2007535140A JP2007535140A (ja) 2007-11-29
JP2007535140A5 true JP2007535140A5 (enExample) 2011-12-08
JP5095387B2 JP5095387B2 (ja) 2012-12-12

Family

ID=34861881

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007500749A Expired - Lifetime JP5095387B2 (ja) 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス
JP2011232501A Expired - Lifetime JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011232501A Expired - Lifetime JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Country Status (8)

Country Link
US (1) US7135747B2 (enExample)
EP (1) EP1719186B1 (enExample)
JP (2) JP5095387B2 (enExample)
KR (1) KR101132898B1 (enExample)
CN (1) CN1922738A (enExample)
CA (1) CA2554944A1 (enExample)
TW (1) TW200531135A (enExample)
WO (1) WO2005083788A2 (enExample)

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CN104201253B (zh) * 2014-07-10 2017-08-25 中航（重庆）微电子有限公司 一种氮化镓器件及其制造方法
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
CN104617092B (zh) * 2014-11-06 2018-06-22 苏州捷芯威半导体有限公司 一种半导体器件及其制作方法
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
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US9947616B2 (en) 2016-03-17 2018-04-17 Cree, Inc. High power MMIC devices having bypassed gate transistors
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
US9786660B1 (en) 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US10418304B2 (en) * 2017-08-28 2019-09-17 National Technology & Engineering Solutions Of Sandia, Llc Ion-implanted thermal barrier
DE102018113506B4 (de) 2018-06-06 2021-12-30 Semikron Elektronik Gmbh & Co. Kg Volumentleitfähiges Leistungshalbleiterbauelement mit Homogenisierungsstruktur
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10483352B1 (en) * 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
EP3951848A4 (en) * 2019-03-29 2023-01-11 Kabushiki Kaisha Toshiba SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers
WO2022172625A1 (ja) * 2021-02-15 2022-08-18 パナソニックＩｐマネジメント株式会社 半導体装置
US12224343B2 (en) 2021-07-13 2025-02-11 Analog Power Conversion LLC Power device with partitioned active regions

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