JP5095387B2 - 熱スペーサを有する半導体デバイス - Google Patents

熱スペーサを有する半導体デバイス Download PDF

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Publication number
JP5095387B2
JP5095387B2 JP2007500749A JP2007500749A JP5095387B2 JP 5095387 B2 JP5095387 B2 JP 5095387B2 JP 2007500749 A JP2007500749 A JP 2007500749A JP 2007500749 A JP2007500749 A JP 2007500749A JP 5095387 B2 JP5095387 B2 JP 5095387B2
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Japan
Prior art keywords
active portion
unit cell
thermal spacer
electrode
semiconductor device
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Expired - Lifetime
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JP2007500749A
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English (en)
Japanese (ja)
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JP2007535140A5 (enExample
JP2007535140A (ja
Inventor
トーマス アレン スコット
ウィリアム ミリガン ジェームズ
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007500749A 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス Expired - Lifetime JP5095387B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/786,962 2004-02-25
US10/786,962 US7135747B2 (en) 2004-02-25 2004-02-25 Semiconductor devices having thermal spacers
PCT/US2004/038894 WO2005083788A2 (en) 2004-02-25 2004-11-18 Semiconductor devices having thermal spacers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011232501A Division JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Publications (3)

Publication Number Publication Date
JP2007535140A JP2007535140A (ja) 2007-11-29
JP2007535140A5 JP2007535140A5 (enExample) 2011-12-08
JP5095387B2 true JP5095387B2 (ja) 2012-12-12

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007500749A Expired - Lifetime JP5095387B2 (ja) 2004-02-25 2004-11-18 熱スペーサを有する半導体デバイス
JP2011232501A Expired - Lifetime JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Family Applications After (1)

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JP2011232501A Expired - Lifetime JP5797082B2 (ja) 2004-02-25 2011-10-24 熱スペーサを有する半導体デバイス

Country Status (8)

Country Link
US (1) US7135747B2 (enExample)
EP (1) EP1719186B1 (enExample)
JP (2) JP5095387B2 (enExample)
KR (1) KR101132898B1 (enExample)
CN (1) CN1922738A (enExample)
CA (1) CA2554944A1 (enExample)
TW (1) TW200531135A (enExample)
WO (1) WO2005083788A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12490512B2 (en) 2021-02-15 2025-12-02 Panasonic Intellectual Property Management Co., Ltd. High voltage nitride semiconductor device

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791160B2 (en) 2006-10-19 2010-09-07 International Business Machines Corporation High-performance FET device layout
US7689946B2 (en) * 2006-10-19 2010-03-30 International Business Machines Corporation High-performance FET device layout
US20080150022A1 (en) * 2006-12-20 2008-06-26 Freescale Semiconductor, Inc. Power transistor featuring a variable topology layout
JP5106041B2 (ja) * 2007-10-26 2012-12-26 株式会社東芝 半導体装置
JP2009111217A (ja) 2007-10-31 2009-05-21 Toshiba Corp 半導体装置
FR2954589B1 (fr) * 2009-12-23 2012-12-28 Thales Sa Transistor a haute mobilite electronique.
CN102339336A (zh) * 2010-07-22 2012-02-01 沈阳中科微电子有限公司 改善微波/射频功率放大器芯片热失效的设计方法
US9136341B2 (en) 2012-04-18 2015-09-15 Rf Micro Devices, Inc. High voltage field effect transistor finger terminations
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
KR20140141281A (ko) 2013-05-31 2014-12-10 삼성전자주식회사 반도체 패키지
US9779988B2 (en) * 2013-12-20 2017-10-03 Nxp Usa, Inc. Semiconductor devices with inner via
CN103700696A (zh) * 2013-12-24 2014-04-02 中国电子科技集团公司第五十五研究所 一种均匀散热的串管结构GaN管芯
CN104201253B (zh) * 2014-07-10 2017-08-25 中航（重庆）微电子有限公司 一种氮化镓器件及其制造方法
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
CN104617092B (zh) * 2014-11-06 2018-06-22 苏州捷芯威半导体有限公司 一种半导体器件及其制作方法
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
CN105321993B (zh) * 2015-05-27 2019-03-29 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
US9786660B1 (en) 2016-03-17 2017-10-10 Cree, Inc. Transistor with bypassed gate structure field
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US9947616B2 (en) 2016-03-17 2018-04-17 Cree, Inc. High power MMIC devices having bypassed gate transistors
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
US10418304B2 (en) * 2017-08-28 2019-09-17 National Technology & Engineering Solutions Of Sandia, Llc Ion-implanted thermal barrier
DE102018113506B4 (de) 2018-06-06 2021-12-30 Semikron Elektronik Gmbh & Co. Kg Volumentleitfähiges Leistungshalbleiterbauelement mit Homogenisierungsstruktur
US10483352B1 (en) * 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
EP3951848A4 (en) * 2019-03-29 2023-01-11 Kabushiki Kaisha Toshiba SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers
US12224343B2 (en) * 2021-07-13 2025-02-11 Analog Power Conversion LLC Power device with partitioned active regions

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US93033A (en) * 1869-07-27 Improvement in broom-head
JPS5835963A (ja) * 1981-08-28 1983-03-02 Fujitsu Ltd 集積回路装置
JPS5943548A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
JPS59210668A (ja) * 1983-05-16 1984-11-29 Fujitsu Ltd 半導体装置
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
JPS60160176A (ja) * 1984-01-30 1985-08-21 Fujitsu Ltd 電界効果半導体装置
JP2615390B2 (ja) * 1985-10-07 1997-05-28 工業技術院長 炭化シリコン電界効果トランジスタの製造方法
JPH02177457A (ja) * 1988-12-28 1990-07-10 Hitachi Ltd 半導体装置
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
JPH06338520A (ja) * 1992-11-12 1994-12-06 Sanyo Electric Co Ltd 電界効果型トランジスタ
US5925895A (en) * 1993-10-18 1999-07-20 Northrop Grumman Corporation Silicon carbide power MESFET with surface effect supressive layer
US5552333A (en) * 1994-09-16 1996-09-03 Lsi Logic Corporation Method for designing low profile variable width input/output cells
JPH08213409A (ja) * 1995-02-06 1996-08-20 Nec Corp 半導体装置
US5760428A (en) * 1996-01-25 1998-06-02 Lsi Logic Corporation Variable width low profile gate array input/output architecture
JPH09223703A (ja) * 1996-02-15 1997-08-26 Toshiba Corp 電界効果トランジスタ
JP3129223B2 (ja) * 1997-02-28 2001-01-29 日本電気株式会社 半導体装置
US5977574A (en) * 1997-03-28 1999-11-02 Lsi Logic Corporation High density gate array cell architecture with sharing of well taps between cells
US6071779A (en) * 1998-01-13 2000-06-06 Texas Instruments Incorporated Source line fabrication process for flash memory
US6140184A (en) * 1998-06-01 2000-10-31 Motorola, Inc. Method of changing the power dissipation across an array of transistors
JP3241022B2 (ja) * 1999-05-25 2001-12-25 日本電気株式会社 電界効果トランジスタ
JP2001015526A (ja) * 1999-06-28 2001-01-19 Nec Kansai Ltd 電界効果トランジスタ
JP2001028425A (ja) * 1999-07-15 2001-01-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6376898B1 (en) * 1999-08-02 2002-04-23 Matsushita Electric Industrial Co., Ltd. Bipolar transistor layout with minimized area and improved heat dissipation
JP2001257360A (ja) * 2000-01-05 2001-09-21 Mitsubishi Electric Corp 半導体装置
JP3409057B2 (ja) * 2000-01-20 2003-05-19 Ｎｅｃエレクトロニクス株式会社 電界効果トランジスタ
US6710405B2 (en) 2001-01-17 2004-03-23 Ixys Corporation Non-uniform power semiconductor device
JP2002319593A (ja) * 2001-04-19 2002-10-31 Furukawa Electric Co Ltd:The 半導体デバイスおよび電極形成方法
US6534857B1 (en) * 2001-11-02 2003-03-18 Northrop Grumman Corporation Thermally balanced power transistor
US6608349B1 (en) * 2001-11-13 2003-08-19 National Semiconductor Corporation Narrow/short high performance MOSFET device design
US6521923B1 (en) * 2002-05-25 2003-02-18 Sirenza Microdevices, Inc. Microwave field effect transistor structure on silicon carbide substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12490512B2 (en) 2021-02-15 2025-12-02 Panasonic Intellectual Property Management Co., Ltd. High voltage nitride semiconductor device

Also Published As

Publication number Publication date
WO2005083788A3 (en) 2005-11-17
EP1719186A2 (en) 2006-11-08
US20050184339A1 (en) 2005-08-25
EP1719186B1 (en) 2017-03-01
US7135747B2 (en) 2006-11-14
KR101132898B1 (ko) 2012-04-03
JP2012069966A (ja) 2012-04-05
CA2554944A1 (en) 2005-09-09
KR20070012792A (ko) 2007-01-29
JP5797082B2 (ja) 2015-10-21
CN1922738A (zh) 2007-02-28
WO2005083788A2 (en) 2005-09-09
TW200531135A (en) 2005-09-16
JP2007535140A (ja) 2007-11-29

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