JP2012009449A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2012009449A JP2012009449A JP2011194697A JP2011194697A JP2012009449A JP 2012009449 A JP2012009449 A JP 2012009449A JP 2011194697 A JP2011194697 A JP 2011194697A JP 2011194697 A JP2011194697 A JP 2011194697A JP 2012009449 A JP2012009449 A JP 2012009449A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- substrate
- sealing
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
【解決手段】本発明では封止された空間内部のEL素子上に、水や酸素などを吸収する性質(吸収性)を有する吸収膜を備える。これにより空間内部に水や酸素を吸収させる機能を容易に持たせることができ、また、EL素子を形成した後、連続的に吸収膜を形成させることができるため空間内に酸素や水分を侵入させることなく封止構造を形成することができ、EL素子の劣化を防止することができる。
【選択図】図1
Description
具体的には、正孔注入層203としては、銅フタロシアニン(Cu−Pc)や、ポリチオフェン誘導体であるPEDOTを用いて形成することができる。
なお、本実施例では、ゲート絶縁膜をエッチングした後で不純物(ボロン)のドーピングを行う方法を示したが、ゲート絶縁膜をエッチングせずに不純物のドーピングを行っても良いし、ゲート絶縁膜をエッチングする前に不純物のドーピングを行っても良い。
基板が圧力調整室1408に搬送された後でゲート1406fが閉じ、圧力調整室1408内は減圧状態になる。
Claims (1)
- 基板上にEL素子を有する発光装置において、前記EL素子上に吸収膜が形成され、前記EL素子は、前記基板と前記吸収膜とに挟まれていることを特徴とする発光装置。
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JP5779679B2 (ja) | 2015-09-16 |
JP2017139244A (ja) | 2017-08-10 |
JP2015065185A (ja) | 2015-04-09 |
JP5386560B2 (ja) | 2014-01-15 |
JP2014116319A (ja) | 2014-06-26 |
US7572478B2 (en) | 2009-08-11 |
US20050260337A1 (en) | 2005-11-24 |
JP5989143B2 (ja) | 2016-09-07 |
JP2018166128A (ja) | 2018-10-25 |
US6924594B2 (en) | 2005-08-02 |
JP6356710B2 (ja) | 2018-07-11 |
US20020070663A1 (en) | 2002-06-13 |
JP2012234835A (ja) | 2012-11-29 |
JP5613736B2 (ja) | 2014-10-29 |
JP2016105413A (ja) | 2016-06-09 |
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