JP2011522251A - 電流検知回路と集積電流センサの構成 - Google Patents
電流検知回路と集積電流センサの構成 Download PDFInfo
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- JP2011522251A JP2011522251A JP2011511715A JP2011511715A JP2011522251A JP 2011522251 A JP2011522251 A JP 2011522251A JP 2011511715 A JP2011511715 A JP 2011511715A JP 2011511715 A JP2011511715 A JP 2011511715A JP 2011522251 A JP2011522251 A JP 2011522251A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/207—Constructional details independent of the type of device used
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/131,339 US7816905B2 (en) | 2008-06-02 | 2008-06-02 | Arrangements for a current sensing circuit and integrated current sensor |
| US12/131,339 | 2008-06-02 | ||
| PCT/US2009/044614 WO2009148823A1 (en) | 2008-06-02 | 2009-05-20 | Arrangements for a current sensing circuit and integrated current sensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014177801A Division JP2014222254A (ja) | 2008-06-02 | 2014-09-02 | 電流検知回路と集積電流センサの構成 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011522251A true JP2011522251A (ja) | 2011-07-28 |
| JP2011522251A5 JP2011522251A5 (enExample) | 2012-05-31 |
Family
ID=41210942
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011511715A Pending JP2011522251A (ja) | 2008-06-02 | 2009-05-20 | 電流検知回路と集積電流センサの構成 |
| JP2014177801A Pending JP2014222254A (ja) | 2008-06-02 | 2014-09-02 | 電流検知回路と集積電流センサの構成 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014177801A Pending JP2014222254A (ja) | 2008-06-02 | 2014-09-02 | 電流検知回路と集積電流センサの構成 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7816905B2 (enExample) |
| JP (2) | JP2011522251A (enExample) |
| KR (1) | KR20110020863A (enExample) |
| CN (1) | CN102016606B (enExample) |
| DE (1) | DE112009001350T5 (enExample) |
| WO (1) | WO2009148823A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015190930A (ja) * | 2014-03-28 | 2015-11-02 | 旭化成エレクトロニクス株式会社 | 電流センサ |
| JP2015210158A (ja) * | 2014-04-25 | 2015-11-24 | 株式会社デンソー | 電流センサ |
Families Citing this family (106)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
| US20070279053A1 (en) * | 2006-05-12 | 2007-12-06 | Taylor William P | Integrated current sensor |
| US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
| JP2010019586A (ja) * | 2008-07-08 | 2010-01-28 | Panasonic Corp | 電流センサ |
| US8063634B2 (en) * | 2008-07-31 | 2011-11-22 | Allegro Microsystems, Inc. | Electronic circuit and method for resetting a magnetoresistance element |
| US9222992B2 (en) | 2008-12-18 | 2015-12-29 | Infineon Technologies Ag | Magnetic field current sensors |
| US20110133732A1 (en) * | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
| US8717016B2 (en) * | 2010-02-24 | 2014-05-06 | Infineon Technologies Ag | Current sensors and methods |
| US8400139B2 (en) * | 2010-03-26 | 2013-03-19 | Infineon Technologies Ag | Sensor package having a sensor chip |
| US9013890B2 (en) | 2010-03-26 | 2015-04-21 | Infineon Technologies Ag | Semiconductor packages and methods for producing the same |
| US8760149B2 (en) | 2010-04-08 | 2014-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
| US8680843B2 (en) * | 2010-06-10 | 2014-03-25 | Infineon Technologies Ag | Magnetic field current sensors |
| US20120007597A1 (en) * | 2010-07-09 | 2012-01-12 | Invensense, Inc. | Micromachined offset reduction structures for magnetic field sensing |
| US8283742B2 (en) | 2010-08-31 | 2012-10-09 | Infineon Technologies, A.G. | Thin-wafer current sensors |
| CH703903B1 (de) | 2010-10-01 | 2014-04-30 | Melexis Tessenderlo Nv | Stromsensor. |
| US9476915B2 (en) | 2010-12-09 | 2016-10-25 | Infineon Technologies Ag | Magnetic field current sensors |
| JP5794777B2 (ja) * | 2010-12-22 | 2015-10-14 | 三菱電機株式会社 | 半導体装置 |
| IT1403434B1 (it) | 2010-12-27 | 2013-10-17 | St Microelectronics Srl | Sensore di campo magnetico avente elementi magnetoresistivi anisotropi, con disposizione perfezionata di relativi elementi di magnetizzazione |
| IT1403433B1 (it) * | 2010-12-27 | 2013-10-17 | St Microelectronics Srl | Sensore magnetoresistivo con capacita' parassita ridotta, e metodo |
| US8975889B2 (en) | 2011-01-24 | 2015-03-10 | Infineon Technologies Ag | Current difference sensors, systems and methods |
| US8963536B2 (en) | 2011-04-14 | 2015-02-24 | Infineon Technologies Ag | Current sensors, systems and methods for sensing current in a conductor |
| US8957676B2 (en) * | 2011-05-06 | 2015-02-17 | Allegro Microsystems, Llc | Magnetic field sensor having a control node to receive a control signal to adjust a threshold |
| US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
| US9000761B2 (en) | 2012-01-19 | 2015-04-07 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Hall-effect sensor isolator |
| US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
| US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
| US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
| US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
| US10215550B2 (en) | 2012-05-01 | 2019-02-26 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensors having highly uniform magnetic fields |
| US9817078B2 (en) | 2012-05-10 | 2017-11-14 | Allegro Microsystems Llc | Methods and apparatus for magnetic sensor having integrated coil |
| FR2990759B1 (fr) * | 2012-05-21 | 2014-05-02 | Schneider Electric Ind Sas | Capteur de courant mixte et procede de montage dudit capteur |
| JP6017182B2 (ja) * | 2012-05-23 | 2016-10-26 | 旭化成エレクトロニクス株式会社 | 電流センサ |
| US8860153B2 (en) | 2012-11-30 | 2014-10-14 | Infineon Technologies Ag | Semiconductor packages, systems, and methods of formation thereof |
| US9482700B2 (en) * | 2013-01-20 | 2016-11-01 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Current detector to sense current without being in series with conductor |
| WO2014125317A1 (en) * | 2013-02-15 | 2014-08-21 | Freescale Semiconductor, Inc. | Integrated circuit with integrated current sensor |
| US9231118B2 (en) * | 2013-03-12 | 2016-01-05 | Infineon Technologies Ag | Chip package with isolated pin, isolated pad or isolated chip carrier and method of making the same |
| US10725100B2 (en) | 2013-03-15 | 2020-07-28 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an externally accessible coil |
| US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
| CH708052B1 (de) * | 2013-05-07 | 2016-09-15 | Melexis Technologies Nv | Vorrichtung zur Strommessung. |
| US9803887B2 (en) | 2013-06-24 | 2017-10-31 | Rheem Manufacturing Company | Cathodic corrosion and dry fire protection apparatus and methods for electric water heaters |
| US10145908B2 (en) | 2013-07-19 | 2018-12-04 | Allegro Microsystems, Llc | Method and apparatus for magnetic sensor producing a changing magnetic field |
| US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
| US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
| TWI504904B (zh) | 2013-07-30 | 2015-10-21 | 旭化成微電子股份有限公司 | Current sensor |
| EP2905626B1 (en) * | 2014-02-05 | 2019-09-11 | ams AG | Integrated current sensor system and method for producing an integrated current sensor system |
| JP2015190780A (ja) * | 2014-03-27 | 2015-11-02 | ヤマハ株式会社 | 電流センサーおよび基板 |
| US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
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| US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
| US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
| US9322887B1 (en) | 2014-12-01 | 2016-04-26 | Allegro Microsystems, Llc | Magnetic field sensor with magnetoresistance elements and conductive-trace magnetic source |
| KR101677422B1 (ko) | 2015-04-13 | 2016-11-18 | 김태용 | 홀 소자를 이용한 다중 출력 전류센서 |
| US10101410B2 (en) | 2015-10-21 | 2018-10-16 | Allegro Microsystems, Llc | Methods and apparatus for sensor having fault trip level setting |
| US20170163065A1 (en) * | 2015-12-08 | 2017-06-08 | Benjamin Avery Freer | Constant power supply for thermo-electric cells |
| US9810721B2 (en) | 2015-12-23 | 2017-11-07 | Melexis Technologies Sa | Method of making a current sensor and current sensor |
| US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
| US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
| US10012518B2 (en) | 2016-06-08 | 2018-07-03 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a proximity of an object |
| US10352969B2 (en) * | 2016-11-29 | 2019-07-16 | Allegro Microsystems, Llc | Systems and methods for integrated shielding in a current sensor |
| KR102597387B1 (ko) * | 2016-12-02 | 2023-11-06 | 퍼듀 리서치 파운데이션 | 차량 배터리 전류 감지 시스템 |
| US9958482B1 (en) * | 2016-12-20 | 2018-05-01 | Allegro Microsystems, Llc | Systems and methods for a high isolation current sensor |
| EP3367110B1 (en) * | 2017-02-24 | 2024-04-17 | Monolithic Power Systems, Inc. | Current sensing system and current sensing method |
| US10481181B2 (en) | 2017-04-25 | 2019-11-19 | Allegro Microsystems, Llc | Systems and methods for current sensing |
| US11428755B2 (en) | 2017-05-26 | 2022-08-30 | Allegro Microsystems, Llc | Coil actuated sensor with sensitivity detection |
| US10324141B2 (en) | 2017-05-26 | 2019-06-18 | Allegro Microsystems, Llc | Packages for coil actuated position sensors |
| US10837943B2 (en) | 2017-05-26 | 2020-11-17 | Allegro Microsystems, Llc | Magnetic field sensor with error calculation |
| US10310028B2 (en) | 2017-05-26 | 2019-06-04 | Allegro Microsystems, Llc | Coil actuated pressure sensor |
| US10996289B2 (en) | 2017-05-26 | 2021-05-04 | Allegro Microsystems, Llc | Coil actuated position sensor with reflected magnetic field |
| US10641842B2 (en) | 2017-05-26 | 2020-05-05 | Allegro Microsystems, Llc | Targets for coil actuated position sensors |
| US10557873B2 (en) | 2017-07-19 | 2020-02-11 | Allegro Microsystems, Llc | Systems and methods for closed loop current sensing |
| WO2019021764A1 (ja) * | 2017-07-24 | 2019-01-31 | 株式会社村田製作所 | アクチュエータ、およびアクチュエータの製造方法 |
| EP3508863B1 (en) * | 2018-01-05 | 2023-06-07 | Melexis Technologies SA | Offset current sensor structure |
| US10866117B2 (en) | 2018-03-01 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field influence during rotation movement of magnetic target |
| US11255700B2 (en) | 2018-08-06 | 2022-02-22 | Allegro Microsystems, Llc | Magnetic field sensor |
| US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
| US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
| US11061084B2 (en) | 2019-03-07 | 2021-07-13 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deflectable substrate |
| US10955306B2 (en) | 2019-04-22 | 2021-03-23 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deformable substrate |
| US10924052B1 (en) | 2019-08-08 | 2021-02-16 | Allegro Microsystems, Llc | Motor control system with phase current polarity detection |
| US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
| US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
| US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
| US11150273B2 (en) | 2020-01-17 | 2021-10-19 | Allegro Microsystems, Llc | Current sensor integrated circuits |
| US11561112B2 (en) | 2020-03-13 | 2023-01-24 | Allegro Microsystems, Llc | Current sensor having stray field immunity |
| US11226382B2 (en) | 2020-04-07 | 2022-01-18 | Allegro Microsystems, Llc | Current sensor system |
| US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
| DE102020208311A1 (de) | 2020-07-02 | 2022-01-05 | Robert Bosch Gesellschaft mit beschränkter Haftung | Sensoranordnung und Verfahren zum Messen eines elektrischen Stroms |
| US11320466B1 (en) | 2020-10-29 | 2022-05-03 | Allegro Microsystems, Llc | Differential current sensor |
| US11796572B2 (en) | 2020-10-31 | 2023-10-24 | Melexis Technologies Sa | Current sensing system |
| US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
| US11402409B1 (en) | 2021-03-22 | 2022-08-02 | Allegro Microsystems, Llc | Differential current sensor package |
| US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
| US12163983B2 (en) | 2021-08-23 | 2024-12-10 | Allegro Microsystems, Llc | Packaged current sensor integrated circuit |
| US11768229B2 (en) * | 2021-08-23 | 2023-09-26 | Allegro Microsystems, Llc | Packaged current sensor integrated circuit |
| US12487254B2 (en) | 2021-08-23 | 2025-12-02 | Allegro Microsystems, Llc | Packaged current sensor integrated circuit |
| US11519946B1 (en) * | 2021-08-23 | 2022-12-06 | Allegro Microsystems, Llc | Packaged current sensor integrated circuit |
| US11578997B1 (en) | 2021-08-24 | 2023-02-14 | Allegro Microsystems, Llc | Angle sensor using eddy currents |
| US12352786B2 (en) | 2021-09-07 | 2025-07-08 | Allegro Microsystems, Llc | Current sensor system |
| US11656250B2 (en) | 2021-09-07 | 2023-05-23 | Allegro Microsystems, Llc | Current sensor system |
| US11892476B2 (en) | 2022-02-15 | 2024-02-06 | Allegro Microsystems, Llc | Current sensor package |
| US12112865B2 (en) | 2022-03-15 | 2024-10-08 | Allegro Microsystems, Llc | Multiple branch bus bar for coreless current sensing application |
| US11885866B2 (en) | 2022-05-31 | 2024-01-30 | Allegro Microsystems, Llc | Auto-calibration for coreless current sensors |
| US11940470B2 (en) | 2022-05-31 | 2024-03-26 | Allegro Microsystems, Llc | Current sensor system |
| US12078662B2 (en) * | 2022-06-27 | 2024-09-03 | Allegro Microsystems, Llc | Techniques for reducing an eddy current in a ground plane of a coreless sensor |
| US12493057B2 (en) | 2023-11-17 | 2025-12-09 | Allegro Microsystems, Llc | Current sensor integrated circuit |
| CN117289012B (zh) * | 2023-11-24 | 2024-02-13 | 浙江森尼克半导体有限公司 | 双电流输入输出、双隔离的电流传感器、电流检测方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003329749A (ja) * | 2002-05-13 | 2003-11-19 | Asahi Kasei Corp | 磁気センサ及び電流センサ |
| WO2003107018A1 (ja) * | 2002-06-18 | 2003-12-24 | 旭化成株式会社 | 電流測定方法および電流測定装置 |
| JP2006514283A (ja) * | 2003-02-11 | 2006-04-27 | アレグロ・マイクロシステムズ・インコーポレーテッド | 集積センサ |
Family Cites Families (143)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283643A (en) * | 1979-05-25 | 1981-08-11 | Electric Power Research Institute, Inc. | Hall sensing apparatus |
| CH651151A5 (de) * | 1979-11-27 | 1985-08-30 | Landis & Gyr Ag | Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes. |
| US4343026A (en) * | 1980-07-09 | 1982-08-03 | Spin Physics, Inc. | Magnetoresistive head employing field feedback |
| CH651701A5 (de) * | 1980-12-24 | 1985-09-30 | Landis & Gyr Ag | Kompensierter messwandler. |
| CH651671A5 (de) * | 1980-12-24 | 1985-09-30 | Landis & Gyr Ag | Anordnung zur messung elektrischer leistung oder energie. |
| DE3426784A1 (de) * | 1984-07-20 | 1986-01-30 | Bosch Gmbh Robert | Magnetoresistiver sensor zur abgabe von elektrischen signalen |
| CA1248222A (en) * | 1984-08-27 | 1989-01-03 | Yutaka Souda | Magnetic transducer head utilizing magnetoresistance effect |
| CH669852A5 (enExample) * | 1986-12-12 | 1989-04-14 | Lem Liaisons Electron Mec | |
| US4772929A (en) * | 1987-01-09 | 1988-09-20 | Sprague Electric Company | Hall sensor with integrated pole pieces |
| KR910004261B1 (ko) * | 1987-04-09 | 1991-06-25 | 후지쓰 가부시끼가이샤 | 자전 변환 소자를 이용한 검지기 |
| EP0300635B1 (en) * | 1987-07-07 | 1995-09-13 | Nippondenso Co., Ltd. | Current detecting device using ferromagnetic magnetoresistance element |
| US4823075A (en) * | 1987-10-13 | 1989-04-18 | General Electric Company | Current sensor using hall-effect device with feedback |
| CH674089A5 (enExample) * | 1987-10-16 | 1990-04-30 | Lem Liaisons Electron Mec | |
| GB8725467D0 (en) * | 1987-10-30 | 1987-12-02 | Honeywell Control Syst | Making current sensor |
| US4939459A (en) * | 1987-12-21 | 1990-07-03 | Tdk Corporation | High sensitivity magnetic sensor |
| US5227721A (en) * | 1987-12-25 | 1993-07-13 | Sharp Kabushiki Kaisha | Superconductive magnetic sensor having self induced magnetic biasing |
| US5041780A (en) * | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
| US4847584A (en) * | 1988-10-14 | 1989-07-11 | Honeywell Inc. | Magnetoresistive magnetic sensor |
| US4926116A (en) * | 1988-10-31 | 1990-05-15 | Westinghouse Electric Corp. | Wide band large dynamic range current sensor and method of current detection using same |
| JP2796391B2 (ja) * | 1990-01-08 | 1998-09-10 | 株式会社日立製作所 | 物理量検出方法および物理量検出装置あるいはこれらの方法あるいは装置を利用したサーボモータおよびこのサーボモータを使用したパワーステアリング装置 |
| JPH04290979A (ja) * | 1991-03-20 | 1992-10-15 | Hitachi Ltd | 磁気センサ、磁気センサを持つ位置検出装置および磁気センサを利用したトルク検出装置、モータ制御装置、あるいはこのトルク検出装置を有する電動パワーステアリング装置 |
| EP0537419A1 (de) * | 1991-10-09 | 1993-04-21 | Landis & Gyr Business Support AG | Anordnung mit einem integrierten Magnetfeldsensor sowie einem ferromagnetischen ersten und zweiten Magnetfluss-Konzentrator und Verfahren zum Einbau einer Vielzahl von Anordnungen in je einem Kunststoffgehäuse |
| JPH05126865A (ja) | 1991-10-22 | 1993-05-21 | Hitachi Ltd | 電流検出装置あるいは電流検出方法 |
| DE4212737C1 (en) | 1992-04-16 | 1993-07-08 | Leica Mikroskopie Und Systeme Gmbh | Compact bridge-connected sensor - has thin-film resistors on substrate |
| CH683469A5 (de) | 1992-07-03 | 1994-03-15 | Landis & Gyr Business Support | Anordnung mit einem einen Magnetfeldsensor enthaltenden Halbleiterplättchen zwischen einem ersten und einem zweiten Polschuh und Verfahren zur Herstellung einer Vielzahl der Anordnungen. |
| DE4243358A1 (de) * | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung |
| DE4300605C2 (de) * | 1993-01-13 | 1994-12-15 | Lust Electronic Systeme Gmbh | Sensorchip |
| US5442283A (en) * | 1993-09-03 | 1995-08-15 | Allegro Microsystems, Inc. | Hall-voltage slope-activated sensor |
| US6002553A (en) * | 1994-02-28 | 1999-12-14 | The United States Of America As Represented By The United States Department Of Energy | Giant magnetoresistive sensor |
| US5583725A (en) * | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
| US5500590A (en) * | 1994-07-20 | 1996-03-19 | Honeywell Inc. | Apparatus for sensing magnetic fields using a coupled film magnetoresistive transducer |
| DE4436876A1 (de) * | 1994-10-15 | 1996-04-18 | Lust Antriebstechnik Gmbh | Sensorchip |
| US5561368A (en) * | 1994-11-04 | 1996-10-01 | International Business Machines Corporation | Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate |
| US5570034A (en) * | 1994-12-29 | 1996-10-29 | Intel Corporation | Using hall effect to monitor current during IDDQ testing of CMOS integrated circuits |
| FR2734058B1 (fr) * | 1995-05-12 | 1997-06-20 | Thomson Csf | Amperemetre |
| EP0772046B1 (de) * | 1995-10-30 | 2002-04-17 | Sentron Ag | Magnetfeldsensor und Strom- oder Energiesensor |
| US5929636A (en) * | 1996-05-02 | 1999-07-27 | Integrated Magnetoelectronics | All-metal giant magnetoresistive solid-state component |
| DE19619806A1 (de) * | 1996-05-15 | 1997-11-20 | Siemens Ag | Magnetfeldempfindliche Sensoreinrichtung mit mehreren GMR-Sensorelementen |
| US5831426A (en) * | 1996-08-16 | 1998-11-03 | Nonvolatile Electronics, Incorporated | Magnetic current sensor |
| US5896030A (en) * | 1996-10-09 | 1999-04-20 | Honeywell Inc. | Magnetic sensor with components attached to transparent plate for laser trimming during calibration |
| DE19650078A1 (de) | 1996-12-03 | 1998-06-04 | Inst Mikrostrukturtechnologie | Sensorelement zur Bestimmung eines Magnetfeldes oder eines Stromes |
| US5877705A (en) * | 1997-04-22 | 1999-03-02 | Nu-Metrics, Inc. | Method and apparatus for analyzing traffic and a sensor therefor |
| EP0927361A1 (en) * | 1997-06-13 | 1999-07-07 | Koninklijke Philips Electronics N.V. | Sensor comprising a wheatstone bridge |
| US5952825A (en) * | 1997-08-14 | 1999-09-14 | Honeywell Inc. | Magnetic field sensing device having integral coils for producing magnetic fields |
| ATE322023T1 (de) * | 1997-09-15 | 2006-04-15 | Ams Internat Ag | Eine stromüberwachungseinrichtung und ein verfahren zu ihrer herstellung |
| US5883567A (en) * | 1997-10-10 | 1999-03-16 | Analog Devices, Inc. | Packaged integrated circuit with magnetic flux concentrator |
| US6094330A (en) * | 1998-01-14 | 2000-07-25 | General Electric Company | Circuit interrupter having improved current sensing apparatus |
| US6300617B1 (en) * | 1998-03-04 | 2001-10-09 | Nonvolatile Electronics, Incorporated | Magnetic digital signal coupler having selected/reversal directions of magnetization |
| JP3544141B2 (ja) * | 1998-05-13 | 2004-07-21 | 三菱電機株式会社 | 磁気検出素子および磁気検出装置 |
| JP3623366B2 (ja) * | 1998-07-17 | 2005-02-23 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えた磁界センサおよびその製造方法と製造装置 |
| JP3623367B2 (ja) * | 1998-07-17 | 2005-02-23 | アルプス電気株式会社 | 巨大磁気抵抗効果素子を備えたポテンショメータ |
| US6809515B1 (en) * | 1998-07-31 | 2004-10-26 | Spinix Corporation | Passive solid-state magnetic field sensors and applications therefor |
| US6424018B1 (en) * | 1998-10-02 | 2002-07-23 | Sanken Electric Co., Ltd. | Semiconductor device having a hall-effect element |
| TW434411B (en) | 1998-10-14 | 2001-05-16 | Tdk Corp | Magnetic sensor apparatus, current sensor apparatus and magnetic sensing element |
| TW534999B (en) | 1998-12-15 | 2003-06-01 | Tdk Corp | Magnetic sensor apparatus and current sensor apparatus |
| DE69920890T2 (de) | 1999-01-21 | 2005-02-03 | Tdk Corp. | Stromsensor |
| EP1031844A3 (fr) * | 1999-02-25 | 2009-03-11 | Liaisons Electroniques-Mecaniques Lem S.A. | Procédé de fabrication d'un capteur de courant électrique |
| US6331773B1 (en) * | 1999-04-16 | 2001-12-18 | Storage Technology Corporation | Pinned synthetic anti-ferromagnet with oxidation protection layer |
| JP3583649B2 (ja) * | 1999-04-27 | 2004-11-04 | Tdk株式会社 | 薄膜磁気ヘッドおよびその製造方法ならびに磁気抵抗効果装置 |
| DE10017374B4 (de) | 1999-05-25 | 2007-05-10 | Siemens Ag | Magnetische Koppeleinrichtung und deren Verwendung |
| EP1892538A3 (en) * | 1999-06-18 | 2008-08-13 | Koninklijke Philips Electronics N.V. | Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems. |
| JP3696448B2 (ja) * | 1999-09-02 | 2005-09-21 | 矢崎総業株式会社 | 電流検出器 |
| JP2001084535A (ja) * | 1999-09-16 | 2001-03-30 | Tdk Corp | 薄膜磁気ヘッドの製造方法および磁気抵抗効果装置の製造方法 |
| DE60044568D1 (de) * | 1999-10-01 | 2010-07-29 | Nve Corp | Gerät zur Überwachung eines magnetischen digitalen Überträgers |
| US6445171B2 (en) | 1999-10-29 | 2002-09-03 | Honeywell Inc. | Closed-loop magnetoresistive current sensor system having active offset nulling |
| US6462541B1 (en) * | 1999-11-12 | 2002-10-08 | Nve Corporation | Uniform sense condition magnetic field sensor using differential magnetoresistance |
| JP3852554B2 (ja) * | 1999-12-09 | 2006-11-29 | サンケン電気株式会社 | ホール素子を備えた電流検出装置 |
| JP2001165963A (ja) * | 1999-12-09 | 2001-06-22 | Sanken Electric Co Ltd | ホール素子を備えた電流検出装置 |
| JP4164615B2 (ja) * | 1999-12-20 | 2008-10-15 | サンケン電気株式会社 | ホ−ル素子を備えた電流検出装置 |
| US6433981B1 (en) * | 1999-12-30 | 2002-08-13 | General Electric Company | Modular current sensor and power source |
| WO2001071713A1 (en) * | 2000-03-22 | 2001-09-27 | Nve Corporation | Read heads in planar monolithic integrated circuit chips |
| DE10028640B4 (de) * | 2000-06-09 | 2005-11-03 | Institut für Physikalische Hochtechnologie e.V. | Wheatstonebrücke, beinhaltend Brückenelemente, bestehend aus einem Spin-Valve-System, sowie ein Verfahren zu deren Herstellung |
| JP2002026419A (ja) * | 2000-07-07 | 2002-01-25 | Sanken Electric Co Ltd | 磁電変換装置 |
| US6429640B1 (en) * | 2000-08-21 | 2002-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | GMR high current, wide dynamic range sensor |
| JP2002131342A (ja) | 2000-10-19 | 2002-05-09 | Canon Electronics Inc | 電流センサ |
| JP2002163808A (ja) * | 2000-11-22 | 2002-06-07 | Tdk Corp | 磁気抵抗効果装置およびその製造方法ならびに薄膜磁気ヘッドおよびその製造方法 |
| US20020093332A1 (en) | 2001-01-18 | 2002-07-18 | Thaddeus Schroeder | Magnetic field sensor with tailored magnetic response |
| DE10159607B4 (de) | 2001-03-09 | 2010-11-18 | Siemens Ag | Analog/Digital-Signalwandlereinrichtung mit galvanischer Trennung in ihrem Singalübertragungsweg |
| JP3284130B1 (ja) * | 2001-04-25 | 2002-05-20 | ティーディーケイ株式会社 | 磁気抵抗効果装置およびその製造方法、薄膜磁気ヘッドおよびその製造方法、ヘッドジンバルアセンブリならびにハードディスク装置 |
| JP3260740B1 (ja) * | 2001-04-25 | 2002-02-25 | ティーディーケイ株式会社 | 磁気抵抗効果装置の製造方法および薄膜磁気ヘッドの製造方法 |
| US6946834B2 (en) * | 2001-06-01 | 2005-09-20 | Koninklijke Philips Electronics N.V. | Method of orienting an axis of magnetization of a first magnetic element with respect to a second magnetic element, semimanufacture for obtaining a sensor, sensor for measuring a magnetic field |
| DE10128150C1 (de) | 2001-06-11 | 2003-01-23 | Siemens Ag | Magnetoresistives Sensorsystem |
| US6542375B1 (en) | 2001-06-14 | 2003-04-01 | National Semiconductor Corporation | Hybrid PCB-IC directional coupler |
| EP1267173A3 (en) * | 2001-06-15 | 2005-03-23 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| JP4164626B2 (ja) | 2001-06-15 | 2008-10-15 | サンケン電気株式会社 | ホ−ル素子を備えた電流検出装置 |
| EP1273921A1 (en) * | 2001-07-06 | 2003-01-08 | Sanken Electric Co., Ltd. | Hall-effect current detector |
| DE10140043B4 (de) * | 2001-08-16 | 2006-03-23 | Siemens Ag | Schichtensystem mit erhöhtem magnetoresistiven Effekt sowie Verwendung desselben |
| US6949927B2 (en) | 2001-08-27 | 2005-09-27 | International Rectifier Corporation | Magnetoresistive magnetic field sensors and motor control devices using same |
| TWI273266B (en) | 2001-11-01 | 2007-02-11 | Asahi Kasei Emd Corp | Current sensor and current sensor manufacturing method |
| DE10155423B4 (de) | 2001-11-12 | 2006-03-02 | Siemens Ag | Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems eines magneto-resistiven Bauelements, insbesondere eines Sensor-oder Logikelements |
| US6667682B2 (en) | 2001-12-26 | 2003-12-23 | Honeywell International Inc. | System and method for using magneto-resistive sensors as dual purpose sensors |
| DE10202287C1 (de) | 2002-01-22 | 2003-08-07 | Siemens Ag | Verfahren zur Herstellung einer monolithischen Brückenschaltung bestehend aus mehreren, als magneto-resistive Elemente ausgebildeten Brückengliedern und eine hiernach hergestellte monolithische Brückenschaltung |
| US6815944B2 (en) * | 2002-01-31 | 2004-11-09 | Allegro Microsystems, Inc. | Method and apparatus for providing information from a speed and direction sensor |
| US6984978B2 (en) * | 2002-02-11 | 2006-01-10 | Honeywell International Inc. | Magnetic field sensor |
| DE10222395B4 (de) | 2002-05-21 | 2010-08-05 | Siemens Ag | Schaltungseinrichtung mit mehreren TMR-Sensorelementen |
| US6781359B2 (en) * | 2002-09-20 | 2004-08-24 | Allegro Microsystems, Inc. | Integrated current sensor |
| JP3896590B2 (ja) * | 2002-10-28 | 2007-03-22 | サンケン電気株式会社 | 電流検出装置 |
| US6995957B2 (en) * | 2003-03-18 | 2006-02-07 | Hitachi Global Storage Technologies Netherland B.V. | Magnetoresistive sensor having a high resistance soft magnetic layer between sensor stack and shield |
| DE10314602B4 (de) | 2003-03-31 | 2007-03-01 | Infineon Technologies Ag | Integrierter differentieller Magnetfeldsensor |
| CN1826672A (zh) | 2003-06-11 | 2006-08-30 | 皇家飞利浦电子股份有限公司 | 具有磁性层结构的器件的制造方法 |
| US7166807B2 (en) * | 2003-08-26 | 2007-01-23 | Allegro Microsystems, Inc. | Current sensor |
| US7709754B2 (en) * | 2003-08-26 | 2010-05-04 | Allegro Microsystems, Inc. | Current sensor |
| US7075287B1 (en) * | 2003-08-26 | 2006-07-11 | Allegro Microsystems, Inc. | Current sensor |
| JP2005195427A (ja) * | 2004-01-06 | 2005-07-21 | Asahi Kasei Electronics Co Ltd | 電流測定装置、電流測定方法および電流測定プログラム |
| DE102004003369A1 (de) | 2004-01-22 | 2005-08-18 | Siemens Ag | Magnetisches Bauelement mit hoher Grenzfrequenz |
| EP1720027B1 (en) * | 2004-02-19 | 2010-11-17 | Mitsubishi Electric Corporation | Magnetic field detector and current detection device, position detection device and rotation detection device using the magnetic field detector |
| JP4433820B2 (ja) | 2004-02-20 | 2010-03-17 | Tdk株式会社 | 磁気検出素子およびその形成方法ならびに磁気センサ、電流計 |
| DE102004009267B3 (de) | 2004-02-26 | 2005-09-22 | Siemens Ag | Ausleseeinrichtung wenigstens eines magnetoresistiven Elementes |
| DE102004062474A1 (de) * | 2004-03-23 | 2005-10-13 | Siemens Ag | Vorrichtung zur potenzialfreien Strommessung |
| JP4229282B2 (ja) * | 2004-04-28 | 2009-02-25 | タイコエレクトロニクスアンプ株式会社 | レバー式コネクタ |
| US20050246114A1 (en) | 2004-04-29 | 2005-11-03 | Rannow Randy K | In-line field sensor |
| DE102004038847B3 (de) | 2004-08-10 | 2005-09-01 | Siemens Ag | Einrichtung zur potenzialfreien Messung eines in einer elektrischen Leiterbahn fließenden Stromes |
| DE102005037905A1 (de) | 2004-08-18 | 2006-03-09 | Siemens Ag | Magnetfeldsensor zum Messen eines Gradienten eines magnetischen Feldes |
| DE102004040079B3 (de) | 2004-08-18 | 2005-12-22 | Siemens Ag | Magnetfeldsensor |
| DE102004043737A1 (de) * | 2004-09-09 | 2006-03-30 | Siemens Ag | Vorrichtung zum Erfassen des Gradienten eines Magnetfeldes und Verfahren zur Herstellung der Vorrichtung |
| JP4360998B2 (ja) | 2004-10-01 | 2009-11-11 | Tdk株式会社 | 電流センサ |
| US7777607B2 (en) | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
| JP4105142B2 (ja) | 2004-10-28 | 2008-06-25 | Tdk株式会社 | 電流センサ |
| DE102004053551A1 (de) | 2004-11-05 | 2006-05-18 | Siemens Ag | Vorrichtung zum Erfassen eines beweglichen oder bewegbaren elektrisch und/oder magnetisch leitenden Teiles |
| JP4105145B2 (ja) | 2004-11-30 | 2008-06-25 | Tdk株式会社 | 電流センサ |
| JP4105147B2 (ja) | 2004-12-06 | 2008-06-25 | Tdk株式会社 | 電流センサ |
| JP4131869B2 (ja) | 2005-01-31 | 2008-08-13 | Tdk株式会社 | 電流センサ |
| US7476953B2 (en) | 2005-02-04 | 2009-01-13 | Allegro Microsystems, Inc. | Integrated sensor having a magnetic flux concentrator |
| ATE381024T1 (de) | 2005-02-15 | 2007-12-15 | Fiat Ricerche | Oberflächenmontierter integrierter stromsensor |
| DE102006008257B4 (de) | 2005-03-22 | 2010-01-14 | Siemens Ag | Magnetoresistives Mehrschichtensystem vom Spin Valve-Typ mit einer magnetisch weicheren Elektrode aus mehreren Schichten und dessen Verwendung |
| US7358724B2 (en) * | 2005-05-16 | 2008-04-15 | Allegro Microsystems, Inc. | Integrated magnetic flux concentrator |
| DE102006021774B4 (de) | 2005-06-23 | 2014-04-03 | Siemens Aktiengesellschaft | Stromsensor zur galvanisch getrennten Strommessung |
| JP4466487B2 (ja) | 2005-06-27 | 2010-05-26 | Tdk株式会社 | 磁気センサおよび電流センサ |
| DE102005038655B3 (de) | 2005-08-16 | 2007-03-22 | Siemens Ag | Magnetfeldsensitive Sensoreinrichtung |
| DE102005040539B4 (de) | 2005-08-26 | 2007-07-05 | Siemens Ag | Magnetfeldsensitive Sensoreinrichtung |
| JP2007064851A (ja) | 2005-08-31 | 2007-03-15 | Tdk Corp | コイル、コイルモジュールおよびその製造方法、ならびに電流センサおよびその製造方法 |
| JP4415923B2 (ja) | 2005-09-30 | 2010-02-17 | Tdk株式会社 | 電流センサ |
| JP4298691B2 (ja) | 2005-09-30 | 2009-07-22 | Tdk株式会社 | 電流センサおよびその製造方法 |
| JP4224483B2 (ja) | 2005-10-14 | 2009-02-12 | Tdk株式会社 | 電流センサ |
| DE102005052688A1 (de) | 2005-11-04 | 2007-05-24 | Siemens Ag | Magnetfeldsensor mit einer Messbrücke mit MR-Sensor |
| US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
| JP2007218700A (ja) | 2006-02-15 | 2007-08-30 | Tdk Corp | 磁気センサおよび電流センサ |
| DE102006007770A1 (de) | 2006-02-20 | 2007-08-30 | Siemens Ag | Sensoreinrichtung zur Erfassung einer Magnetfeldgröße |
| DE102006026148A1 (de) | 2006-06-06 | 2007-12-13 | Insta Elektro Gmbh | Elektrisches/elektronisches Gerät |
| DE102006028698B3 (de) | 2006-06-22 | 2007-12-13 | Siemens Ag | OMR-Sensor und Anordnung aus solchen Sensoren |
| DE102006046739B4 (de) | 2006-09-29 | 2008-08-14 | Siemens Ag | Verfahren zum Betreiben eines Magnetfeldsensors und zugehöriger Magnetfeldsensor |
| DE102006046736B4 (de) | 2006-09-29 | 2008-08-14 | Siemens Ag | Verfahren zum Betreiben eines Magnetfeldsensors und zugehöriger Magnetfeldsensor |
| US8203332B2 (en) | 2008-06-24 | 2012-06-19 | Magic Technologies, Inc. | Gear tooth sensor (GTS) with magnetoresistive bridge |
-
2008
- 2008-06-02 US US12/131,339 patent/US7816905B2/en active Active
-
2009
- 2009-05-20 CN CN2009801156086A patent/CN102016606B/zh active Active
- 2009-05-20 KR KR1020107029241A patent/KR20110020863A/ko not_active Ceased
- 2009-05-20 WO PCT/US2009/044614 patent/WO2009148823A1/en not_active Ceased
- 2009-05-20 DE DE112009001350T patent/DE112009001350T5/de active Pending
- 2009-05-20 JP JP2011511715A patent/JP2011522251A/ja active Pending
-
2014
- 2014-09-02 JP JP2014177801A patent/JP2014222254A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003329749A (ja) * | 2002-05-13 | 2003-11-19 | Asahi Kasei Corp | 磁気センサ及び電流センサ |
| WO2003107018A1 (ja) * | 2002-06-18 | 2003-12-24 | 旭化成株式会社 | 電流測定方法および電流測定装置 |
| JP2006514283A (ja) * | 2003-02-11 | 2006-04-27 | アレグロ・マイクロシステムズ・インコーポレーテッド | 集積センサ |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015190930A (ja) * | 2014-03-28 | 2015-11-02 | 旭化成エレクトロニクス株式会社 | 電流センサ |
| JP2015210158A (ja) * | 2014-04-25 | 2015-11-24 | 株式会社デンソー | 電流センサ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014222254A (ja) | 2014-11-27 |
| WO2009148823A1 (en) | 2009-12-10 |
| CN102016606B (zh) | 2013-10-30 |
| CN102016606A (zh) | 2011-04-13 |
| DE112009001350T5 (de) | 2011-04-21 |
| US20090295368A1 (en) | 2009-12-03 |
| KR20110020863A (ko) | 2011-03-03 |
| US7816905B2 (en) | 2010-10-19 |
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