JP2011513073A - キャビティをシールする方法 - Google Patents

キャビティをシールする方法 Download PDF

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Publication number
JP2011513073A
JP2011513073A JP2010547696A JP2010547696A JP2011513073A JP 2011513073 A JP2011513073 A JP 2011513073A JP 2010547696 A JP2010547696 A JP 2010547696A JP 2010547696 A JP2010547696 A JP 2010547696A JP 2011513073 A JP2011513073 A JP 2011513073A
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JP
Japan
Prior art keywords
cavity
passage
layer
substrate
redeposition
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JP2010547696A
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English (en)
Japanese (ja)
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JP2011513073A5 (enExample
Inventor
ミカエル・ルノー
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キャベンディッシュ・キネティックス・リミテッド
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Publication of JP2011513073A publication Critical patent/JP2011513073A/ja
Publication of JP2011513073A5 publication Critical patent/JP2011513073A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0145—Hermetically sealing an opening in the lid

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Micromachines (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2010547696A 2008-02-22 2009-02-12 キャビティをシールする方法 Pending JP2011513073A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6665508P 2008-02-22 2008-02-22
US12/267,186 US7989262B2 (en) 2008-02-22 2008-11-07 Method of sealing a cavity
PCT/US2009/033927 WO2009105382A2 (en) 2008-02-22 2009-02-12 Method of sealing a cavity

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012200158A Division JP2013031919A (ja) 2008-02-22 2012-09-12 キャビティをシールする方法

Publications (2)

Publication Number Publication Date
JP2011513073A true JP2011513073A (ja) 2011-04-28
JP2011513073A5 JP2011513073A5 (enExample) 2011-07-21

Family

ID=40986138

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010547696A Pending JP2011513073A (ja) 2008-02-22 2009-02-12 キャビティをシールする方法
JP2012200158A Pending JP2013031919A (ja) 2008-02-22 2012-09-12 キャビティをシールする方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012200158A Pending JP2013031919A (ja) 2008-02-22 2012-09-12 キャビティをシールする方法

Country Status (6)

Country Link
US (2) US7989262B2 (enExample)
EP (1) EP2268568B1 (enExample)
JP (2) JP2011513073A (enExample)
CN (1) CN101998930B (enExample)
TW (1) TWI353338B (enExample)
WO (1) WO2009105382A2 (enExample)

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US20120244715A1 (en) * 2009-12-02 2012-09-27 Xactix, Inc. High-selectivity etching system and method
WO2012145485A2 (en) * 2011-04-20 2012-10-26 Cavendish Kinetics, Inc Implantation of gaseous chemicals into cavities formed in intermediate dielectric layers for subsequent thermal diffusion release
US8492187B2 (en) * 2011-09-29 2013-07-23 International Business Machines Corporation High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate
SE537584C2 (sv) * 2011-12-15 2015-06-30 Silex Microsystems Ab Tunnfilmskapsling
US10703627B2 (en) 2013-06-27 2020-07-07 Soitec Methods of fabricating semiconductor structures including cavities filled with a sacrificial material
US9330929B1 (en) * 2014-10-13 2016-05-03 Infineon Technologies Dresden Gmbh Systems and methods for horizontal integration of acceleration sensor structures
CN105977221B (zh) * 2016-04-28 2018-11-06 清华大学 气密性封装结构及封装方法
JP6691234B2 (ja) * 2016-07-22 2020-04-28 ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． 基板アセンブリ及び関連方法
DE102017218635B4 (de) 2017-10-18 2021-03-18 Infineon Technologies Ag Verfahren zum Verschließen einer Zugangsöffnung zu einer Kavität und MEMS-Bauelement mit einem Verschlusselement
DE102019120886A1 (de) * 2019-08-02 2021-02-04 Infineon Technologies Ag Halbleitergehäuse mit einem Hohlraum in seinem Gehäusekörper

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US20070235501A1 (en) * 2006-03-29 2007-10-11 John Heck Self-packaging MEMS device

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EP1433740A1 (en) * 2002-12-24 2004-06-30 Interuniversitair Microelektronica Centrum Vzw Method for the closure of openings in a film
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Also Published As

Publication number Publication date
EP2268568B1 (en) 2014-12-17
US20090215214A1 (en) 2009-08-27
US8395249B2 (en) 2013-03-12
CN101998930A (zh) 2011-03-30
CN101998930B (zh) 2012-12-05
TW200938480A (en) 2009-09-16
US20110285035A1 (en) 2011-11-24
JP2013031919A (ja) 2013-02-14
US7989262B2 (en) 2011-08-02
WO2009105382A2 (en) 2009-08-27
WO2009105382A3 (en) 2010-02-18
EP2268568A2 (en) 2011-01-05
TWI353338B (en) 2011-12-01

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