TWI353338B - Method of sealing a cavity - Google Patents
Method of sealing a cavity Download PDFInfo
- Publication number
- TWI353338B TWI353338B TW098105313A TW98105313A TWI353338B TW I353338 B TWI353338 B TW I353338B TW 098105313 A TW098105313 A TW 098105313A TW 98105313 A TW98105313 A TW 98105313A TW I353338 B TWI353338 B TW I353338B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- channel
- substrate
- sacrificial
- depositing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 78
- 238000007789 sealing Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims description 186
- 239000000758 substrate Substances 0.000 claims description 80
- 238000000151 deposition Methods 0.000 claims description 41
- 238000005538 encapsulation Methods 0.000 claims description 38
- 238000000992 sputter etching Methods 0.000 claims description 24
- 230000008021 deposition Effects 0.000 claims description 10
- 239000011800 void material Substances 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 3
- 101001137510 Homo sapiens Outer dynein arm-docking complex subunit 2 Proteins 0.000 claims 1
- 102100035706 Outer dynein arm-docking complex subunit 2 Human genes 0.000 claims 1
- 210000003298 dental enamel Anatomy 0.000 claims 1
- 239000007789 gas Substances 0.000 description 53
- 230000008569 process Effects 0.000 description 25
- 238000004544 sputter deposition Methods 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000005530 etching Methods 0.000 description 16
- 239000007788 liquid Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000002250 absorbent Substances 0.000 description 7
- 230000002745 absorbent Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 230000002411 adverse Effects 0.000 description 5
- 125000004429 atom Chemical group 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- UDWPONKAYSRBTJ-UHFFFAOYSA-N [He].[N] Chemical compound [He].[N] UDWPONKAYSRBTJ-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- -1 hafnium hydride Chemical compound 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0145—Hermetically sealing an opening in the lid
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6665508P | 2008-02-22 | 2008-02-22 | |
| US12/267,186 US7989262B2 (en) | 2008-02-22 | 2008-11-07 | Method of sealing a cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200938480A TW200938480A (en) | 2009-09-16 |
| TWI353338B true TWI353338B (en) | 2011-12-01 |
Family
ID=40986138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098105313A TWI353338B (en) | 2008-02-22 | 2009-02-19 | Method of sealing a cavity |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7989262B2 (enExample) |
| EP (1) | EP2268568B1 (enExample) |
| JP (2) | JP2011513073A (enExample) |
| CN (1) | CN101998930B (enExample) |
| TW (1) | TWI353338B (enExample) |
| WO (1) | WO2009105382A2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120244715A1 (en) * | 2009-12-02 | 2012-09-27 | Xactix, Inc. | High-selectivity etching system and method |
| WO2012145485A2 (en) * | 2011-04-20 | 2012-10-26 | Cavendish Kinetics, Inc | Implantation of gaseous chemicals into cavities formed in intermediate dielectric layers for subsequent thermal diffusion release |
| US8492187B2 (en) * | 2011-09-29 | 2013-07-23 | International Business Machines Corporation | High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate |
| SE537584C2 (sv) * | 2011-12-15 | 2015-06-30 | Silex Microsystems Ab | Tunnfilmskapsling |
| US10703627B2 (en) | 2013-06-27 | 2020-07-07 | Soitec | Methods of fabricating semiconductor structures including cavities filled with a sacrificial material |
| US9330929B1 (en) * | 2014-10-13 | 2016-05-03 | Infineon Technologies Dresden Gmbh | Systems and methods for horizontal integration of acceleration sensor structures |
| CN105977221B (zh) * | 2016-04-28 | 2018-11-06 | 清华大学 | 气密性封装结构及封装方法 |
| JP6691234B2 (ja) * | 2016-07-22 | 2020-04-28 | ヒューレット−パッカード デベロップメント カンパニー エル．ピー．Ｈｅｗｌｅｔｔ‐Ｐａｃｋａｒｄ Ｄｅｖｅｌｏｐｍｅｎｔ Ｃｏｍｐａｎｙ， Ｌ．Ｐ． | 基板アセンブリ及び関連方法 |
| DE102017218635B4 (de) | 2017-10-18 | 2021-03-18 | Infineon Technologies Ag | Verfahren zum Verschließen einer Zugangsöffnung zu einer Kavität und MEMS-Bauelement mit einem Verschlusselement |
| DE102019120886A1 (de) * | 2019-08-02 | 2021-02-04 | Infineon Technologies Ag | Halbleitergehäuse mit einem Hohlraum in seinem Gehäusekörper |
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-
2008
- 2008-11-07 US US12/267,186 patent/US7989262B2/en active Active
-
2009
- 2009-02-12 WO PCT/US2009/033927 patent/WO2009105382A2/en not_active Ceased
- 2009-02-12 JP JP2010547696A patent/JP2011513073A/ja active Pending
- 2009-02-12 CN CN200980112054.4A patent/CN101998930B/zh active Active
- 2009-02-12 EP EP09712954.8A patent/EP2268568B1/en active Active
- 2009-02-19 TW TW098105313A patent/TWI353338B/zh active
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2011
- 2011-08-01 US US13/195,215 patent/US8395249B2/en active Active
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2012
- 2012-09-12 JP JP2012200158A patent/JP2013031919A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP2268568B1 (en) | 2014-12-17 |
| US20090215214A1 (en) | 2009-08-27 |
| US8395249B2 (en) | 2013-03-12 |
| CN101998930A (zh) | 2011-03-30 |
| CN101998930B (zh) | 2012-12-05 |
| JP2011513073A (ja) | 2011-04-28 |
| TW200938480A (en) | 2009-09-16 |
| US20110285035A1 (en) | 2011-11-24 |
| JP2013031919A (ja) | 2013-02-14 |
| US7989262B2 (en) | 2011-08-02 |
| WO2009105382A2 (en) | 2009-08-27 |
| WO2009105382A3 (en) | 2010-02-18 |
| EP2268568A2 (en) | 2011-01-05 |
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