JP2011511442A5 - - Google Patents
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- Publication number
- JP2011511442A5 JP2011511442A5 JP2010544535A JP2010544535A JP2011511442A5 JP 2011511442 A5 JP2011511442 A5 JP 2011511442A5 JP 2010544535 A JP2010544535 A JP 2010544535A JP 2010544535 A JP2010544535 A JP 2010544535A JP 2011511442 A5 JP2011511442 A5 JP 2011511442A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- component
- layer
- exposed surface
- fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 28
- 239000000463 material Substances 0.000 claims 16
- 238000005530 etching Methods 0.000 claims 10
- 239000000203 mixture Substances 0.000 claims 8
- 239000010410 layer Substances 0.000 claims 7
- 238000000151 deposition Methods 0.000 claims 6
- 239000002344 surface layer Substances 0.000 claims 6
- 230000008021 deposition Effects 0.000 claims 5
- 238000007639 printing Methods 0.000 claims 4
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000004615 ingredient Substances 0.000 claims 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- 239000004793 Polystyrene Substances 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229920002125 Sokalan® Polymers 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 239000000443 aerosol Substances 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 claims 1
- 238000010924 continuous production Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims 1
- 238000007641 inkjet printing Methods 0.000 claims 1
- 239000011133 lead Substances 0.000 claims 1
- 239000005011 phenolic resin Substances 0.000 claims 1
- 229920001568 phenolic resin Polymers 0.000 claims 1
- 239000004584 polyacrylic acid Substances 0.000 claims 1
- 229920000767 polyaniline Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000013047 polymeric layer Substances 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 229920000123 polythiophene Polymers 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 235000013024 sodium fluoride Nutrition 0.000 claims 1
- 239000011775 sodium fluoride Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 239000004094 surface-active agent Substances 0.000 claims 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- URYYVOIYTNXXBN-OWOJBTEDSA-N trans-cyclooctene Chemical compound C1CCC\C=C\CC1 URYYVOIYTNXXBN-OWOJBTEDSA-N 0.000 claims 1
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2008900477 | 2008-02-01 | ||
| AU2008900477A AU2008900477A0 (en) | 2008-02-01 | Method of processing | |
| AU2008903289A AU2008903289A0 (en) | 2008-06-27 | Method for patterned etching of selected material | |
| AU2008903289 | 2008-06-27 | ||
| AU2008906040A AU2008906040A0 (en) | 2008-11-21 | Method for patterened etching of selected material | |
| AU2008906040 | 2008-11-21 | ||
| PCT/AU2009/000098 WO2009094711A1 (en) | 2008-02-01 | 2009-01-29 | Method for patterned etching of selected material |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011511442A JP2011511442A (ja) | 2011-04-07 |
| JP2011511442A5 true JP2011511442A5 (enExample) | 2012-03-15 |
| JP5242703B2 JP5242703B2 (ja) | 2013-07-24 |
Family
ID=40912168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010544535A Expired - Fee Related JP5242703B2 (ja) | 2008-02-01 | 2009-01-29 | 選択された材料のパターン化されたエッチング法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8273659B2 (enExample) |
| EP (1) | EP2245655A4 (enExample) |
| JP (1) | JP5242703B2 (enExample) |
| KR (1) | KR20110020760A (enExample) |
| CN (1) | CN101990705A (enExample) |
| AU (1) | AU2009208384A1 (enExample) |
| TW (1) | TW200947555A (enExample) |
| WO (1) | WO2009094711A1 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011017740A1 (en) * | 2009-08-11 | 2011-02-17 | Newsouth Innovations Pty Limited | A method for the selective delivery of material to a substrate |
| WO2011032218A1 (en) * | 2009-09-18 | 2011-03-24 | Newsouth Innovations Pty Limited | Method for texturing surfaces |
| SG179060A1 (en) * | 2009-09-18 | 2012-04-27 | Merck Patent Gmbh | Ink jet printable etching inks and associated process |
| DK2363299T3 (da) | 2010-03-05 | 2013-01-28 | Spanolux N V Div Balterio | Fremgangsmåde til fremstilling af en gulvplade |
| KR101399419B1 (ko) * | 2011-04-26 | 2014-06-30 | 엔젯 주식회사 | 태양전지의 전면전극 형성방법 |
| CN102320752B (zh) * | 2011-06-09 | 2013-06-19 | 中国科学院化学研究所 | 材料的图案化方法 |
| WO2013062727A1 (en) * | 2011-10-24 | 2013-05-02 | Applied Materials, Inc. | Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells |
| CN103086607B (zh) | 2011-10-28 | 2015-08-26 | 清华大学 | 光栅的制备方法 |
| CN103091747B (zh) * | 2011-10-28 | 2015-11-25 | 清华大学 | 一种光栅的制备方法 |
| WO2014071458A1 (en) * | 2012-11-09 | 2014-05-15 | Newsouth Innovations Pty Ltd | Formation of metal contacts |
| TWI480947B (zh) * | 2013-04-18 | 2015-04-11 | Nat Univ Tsing Hua | 於銅銦鎵硒製備三維結構的方法 |
| US8815633B1 (en) * | 2013-04-18 | 2014-08-26 | National Tsing Hua University | Method of fabricating 3D structure on CIGS material |
| CN103606634B (zh) * | 2013-11-14 | 2016-02-10 | 中国科学院化学研究所 | 一种图案化金属电极及其制备方法 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| CN106414664B (zh) * | 2014-05-20 | 2019-09-13 | 阿尔法金属公司 | 用于太阳能电池和半导体制作的可喷射的油墨 |
| CN107851684B (zh) * | 2015-03-13 | 2020-03-24 | 陶氏环球技术有限责任公司 | 纳米结构材料方法及装置 |
| TWI593547B (zh) * | 2015-11-13 | 2017-08-01 | 財團法人工業技術研究院 | 三維組織列印裝置、三維組織列印方法及人工皮膚 |
| US10858528B2 (en) | 2015-12-23 | 2020-12-08 | Kornit Digital Ltd. | Rub-resistant inkjet composition |
| CN109932354B (zh) * | 2019-05-06 | 2021-10-08 | 中山大学 | 一种用于表面增强拉曼光谱痕量分析的原位分离富集装置及应用 |
| CN110634795B (zh) * | 2019-10-23 | 2022-12-02 | 京东方科技集团股份有限公司 | 阵列基板的制备方法、阵列基板及显示装置 |
| CN115142064B (zh) * | 2019-11-28 | 2024-03-26 | 东莞市图创智能制造有限公司 | 喷墨打印式蚀刻方法及具有蚀刻功能的喷墨打印机 |
| JP7513454B2 (ja) * | 2020-07-27 | 2024-07-09 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7580217B2 (ja) * | 2020-07-27 | 2024-11-11 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、基板処理装置、および、処理液 |
| US20220035251A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Methods to fabricate 2d wedge and localized encapsulation for diffractive optics |
| CN114106588B (zh) * | 2020-08-25 | 2023-01-03 | 上海迪赢生物科技有限公司 | 一种用于3d喷墨法高通量核酸原位合成的功能化表面处理方法 |
| JP7606896B2 (ja) * | 2021-03-19 | 2024-12-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
| JP7682656B2 (ja) * | 2021-03-19 | 2025-05-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
| JP7603517B2 (ja) * | 2021-04-26 | 2024-12-20 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法、および、基板処理装置 |
| KR102874254B1 (ko) * | 2021-07-16 | 2025-10-21 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조방법 |
| CN115613032B (zh) * | 2022-10-11 | 2024-09-20 | 苏州华星光电技术有限公司 | 蚀刻液 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0325937A (ja) * | 1989-06-22 | 1991-02-04 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH04288649A (ja) | 1991-02-20 | 1992-10-13 | Mitsubishi Electric Corp | メモリ装置 |
| FR2775280B1 (fr) * | 1998-02-23 | 2000-04-14 | Saint Gobain Vitrage | Procede de gravure d'une couche conductrice |
| WO2001047044A2 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
| AU2015901A (en) * | 1999-12-21 | 2001-07-03 | Plastic Logic Limited | Inkjet-fabricated integrated circuits |
| KR100812891B1 (ko) * | 2000-04-28 | 2008-03-11 | 메르크 파텐트 게엠베하 | 무기물 표면용 에칭 페이스트 |
| GB2367788A (en) * | 2000-10-16 | 2002-04-17 | Seiko Epson Corp | Etching using an ink jet print head |
| US7384862B2 (en) * | 2003-06-30 | 2008-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor device and display device |
| TWI228389B (en) * | 2003-12-26 | 2005-02-21 | Ind Tech Res Inst | Method for forming conductive plugs |
| JP4575098B2 (ja) * | 2004-09-28 | 2010-11-04 | 株式会社東芝 | パターン形成方法および電子デバイスの製造方法 |
| TW200620451A (en) * | 2004-11-09 | 2006-06-16 | Univ Osaka | Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method |
| US8367551B2 (en) * | 2005-03-25 | 2013-02-05 | E I Du Pont De Nemours And Company | Spin-printing of etchants and modifiers |
| JP4657068B2 (ja) * | 2005-09-22 | 2011-03-23 | シャープ株式会社 | 裏面接合型太陽電池の製造方法 |
| JP5201789B2 (ja) * | 2005-11-14 | 2013-06-05 | シャープ株式会社 | 太陽電池およびその製造方法 |
| WO2007085452A1 (de) * | 2006-01-25 | 2007-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung |
| US7416989B1 (en) * | 2006-06-30 | 2008-08-26 | Novellus Systems, Inc. | Adsorption based material removal process |
| EP2109882A4 (en) * | 2007-01-31 | 2010-12-22 | Newsouth Innovations Pty Ltd | METHOD FOR FORMING OPENINGS IN CHOSEN MATERIAL |
-
2009
- 2009-01-29 EP EP09706758A patent/EP2245655A4/en not_active Withdrawn
- 2009-01-29 AU AU2009208384A patent/AU2009208384A1/en not_active Abandoned
- 2009-01-29 KR KR1020107019558A patent/KR20110020760A/ko not_active Withdrawn
- 2009-01-29 WO PCT/AU2009/000098 patent/WO2009094711A1/en not_active Ceased
- 2009-01-29 JP JP2010544535A patent/JP5242703B2/ja not_active Expired - Fee Related
- 2009-01-29 CN CN2009801115599A patent/CN101990705A/zh active Pending
- 2009-02-02 TW TW098103223A patent/TW200947555A/zh unknown
-
2010
- 2010-07-30 US US12/847,061 patent/US8273659B2/en not_active Expired - Fee Related
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