CN101990705A - 用于对选定材料进行图案蚀刻的方法 - Google Patents

用于对选定材料进行图案蚀刻的方法 Download PDF

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Publication number
CN101990705A
CN101990705A CN2009801115599A CN200980111559A CN101990705A CN 101990705 A CN101990705 A CN 101990705A CN 2009801115599 A CN2009801115599 A CN 2009801115599A CN 200980111559 A CN200980111559 A CN 200980111559A CN 101990705 A CN101990705 A CN 101990705A
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CN
China
Prior art keywords
layer
component
etching
predetermined pattern
area
Prior art date
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Pending
Application number
CN2009801115599A
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English (en)
Chinese (zh)
Inventor
S·R·韦纳姆
A·J·列侬
A·W·Y·何-巴耶
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NewSouth Innovations Pty Ltd
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NewSouth Innovations Pty Ltd
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Filing date
Publication date
Priority claimed from AU2008900477A external-priority patent/AU2008900477A0/en
Application filed by NewSouth Innovations Pty Ltd filed Critical NewSouth Innovations Pty Ltd
Publication of CN101990705A publication Critical patent/CN101990705A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2009801115599A 2008-02-01 2009-01-29 用于对选定材料进行图案蚀刻的方法 Pending CN101990705A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
AU2008900477A AU2008900477A0 (en) 2008-02-01 Method of processing
AU2008900477 2008-02-01
AU2008903289 2008-06-27
AU2008903289A AU2008903289A0 (en) 2008-06-27 Method for patterned etching of selected material
AU2008906040A AU2008906040A0 (en) 2008-11-21 Method for patterened etching of selected material
AU2008906040 2008-11-21
PCT/AU2009/000098 WO2009094711A1 (en) 2008-02-01 2009-01-29 Method for patterned etching of selected material

Publications (1)

Publication Number Publication Date
CN101990705A true CN101990705A (zh) 2011-03-23

Family

ID=40912168

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801115599A Pending CN101990705A (zh) 2008-02-01 2009-01-29 用于对选定材料进行图案蚀刻的方法

Country Status (8)

Country Link
US (1) US8273659B2 (enExample)
EP (1) EP2245655A4 (enExample)
JP (1) JP5242703B2 (enExample)
KR (1) KR20110020760A (enExample)
CN (1) CN101990705A (enExample)
AU (1) AU2009208384A1 (enExample)
TW (1) TW200947555A (enExample)
WO (1) WO2009094711A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102320752A (zh) * 2011-06-09 2012-01-18 中国科学院化学研究所 材料的图案化方法
CN103493221A (zh) * 2011-04-26 2014-01-01 昂杰特有限公司 太阳能电池的前面电极的形成方法
CN103606634A (zh) * 2013-11-14 2014-02-26 中国科学院化学研究所 一种图案化金属电极及其制备方法
CN109932354A (zh) * 2019-05-06 2019-06-25 中山大学 一种用于表面增强拉曼光谱痕量分析的原位分离富集装置及应用
CN110760847A (zh) * 2019-11-28 2020-02-07 东莞市图创智能制造有限公司 使用喷墨打印的蚀刻方法及用于蚀刻方法的喷墨打印机
CN116134587A (zh) * 2020-07-27 2023-05-16 株式会社斯库林集团 基板处理方法及基板处理装置

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011017740A1 (en) * 2009-08-11 2011-02-17 Newsouth Innovations Pty Limited A method for the selective delivery of material to a substrate
AU2010294901B2 (en) * 2009-09-18 2015-01-15 Merck Patent Gmbh Ink jet printable etching inks and associated process
WO2011032218A1 (en) * 2009-09-18 2011-03-24 Newsouth Innovations Pty Limited Method for texturing surfaces
EP2363299B1 (en) * 2010-03-05 2012-10-17 Spanolux N.V.- DIV. Balterio A method of manufacturing a floor board
WO2013062727A1 (en) * 2011-10-24 2013-05-02 Applied Materials, Inc. Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells
CN103091747B (zh) * 2011-10-28 2015-11-25 清华大学 一种光栅的制备方法
CN103086607B (zh) * 2011-10-28 2015-08-26 清华大学 光栅的制备方法
WO2014071458A1 (en) * 2012-11-09 2014-05-15 Newsouth Innovations Pty Ltd Formation of metal contacts
US8815633B1 (en) * 2013-04-18 2014-08-26 National Tsing Hua University Method of fabricating 3D structure on CIGS material
TWI480947B (zh) * 2013-04-18 2015-04-11 Nat Univ Tsing Hua 於銅銦鎵硒製備三維結構的方法
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
WO2015179425A2 (en) * 2014-05-20 2015-11-26 Alpha Metals, Inc. Jettable inks for solar cell and semiconductor fabrication
JP6553735B2 (ja) * 2015-03-13 2019-07-31 ダウ グローバル テクノロジーズ エルエルシー ナノ構造材料の方法及び素子
TWI593547B (zh) * 2015-11-13 2017-08-01 財團法人工業技術研究院 三維組織列印裝置、三維組織列印方法及人工皮膚
WO2017109786A1 (en) 2015-12-23 2017-06-29 Kornit Digital Ltd. Rub-resistant inkjet composition
CN110634795B (zh) * 2019-10-23 2022-12-02 京东方科技集团股份有限公司 阵列基板的制备方法、阵列基板及显示装置
JP7580217B2 (ja) * 2020-07-27 2024-11-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置、および、処理液
US20220035251A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Methods to fabricate 2d wedge and localized encapsulation for diffractive optics
CN114106588B (zh) * 2020-08-25 2023-01-03 上海迪赢生物科技有限公司 一种用于3d喷墨法高通量核酸原位合成的功能化表面处理方法
JP7606896B2 (ja) * 2021-03-19 2024-12-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
JP7682656B2 (ja) * 2021-03-19 2025-05-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
JP7603517B2 (ja) * 2021-04-26 2024-12-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
KR102874254B1 (ko) * 2021-07-16 2025-10-21 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조방법
CN115613032B (zh) * 2022-10-11 2024-09-20 苏州华星光电技术有限公司 蚀刻液

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325937A (ja) * 1989-06-22 1991-02-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04288649A (ja) 1991-02-20 1992-10-13 Mitsubishi Electric Corp メモリ装置
FR2775280B1 (fr) * 1998-02-23 2000-04-14 Saint Gobain Vitrage Procede de gravure d'une couche conductrice
WO2001046987A2 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Inkjet-fabricated integrated circuits
WO2001047044A2 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Forming interconnects
MXPA02010634A (es) * 2000-04-28 2003-03-10 Merck Patent Gmbh Pastas mordientes para superficies inorganicas.
GB2367788A (en) * 2000-10-16 2002-04-17 Seiko Epson Corp Etching using an ink jet print head
US7384862B2 (en) * 2003-06-30 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device and display device
TWI228389B (en) * 2003-12-26 2005-02-21 Ind Tech Res Inst Method for forming conductive plugs
JP4575098B2 (ja) * 2004-09-28 2010-11-04 株式会社東芝 パターン形成方法および電子デバイスの製造方法
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
US8367551B2 (en) * 2005-03-25 2013-02-05 E I Du Pont De Nemours And Company Spin-printing of etchants and modifiers
JP4657068B2 (ja) * 2005-09-22 2011-03-23 シャープ株式会社 裏面接合型太陽電池の製造方法
JP5201789B2 (ja) * 2005-11-14 2013-06-05 シャープ株式会社 太陽電池およびその製造方法
WO2007085452A1 (de) * 2006-01-25 2007-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zur präzisionsbearbeitung von substraten mittels eines in einen flüssigkeitsstrahl eingekoppelten laser und dessen verwendung
US7416989B1 (en) * 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
KR20090125078A (ko) * 2007-01-31 2009-12-03 뉴사우스 이노베이션즈 피티와이 리미티드 선택된 물질에 개구부들을 형성하는 방법

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103493221A (zh) * 2011-04-26 2014-01-01 昂杰特有限公司 太阳能电池的前面电极的形成方法
CN102320752B (zh) * 2011-06-09 2013-06-19 中国科学院化学研究所 材料的图案化方法
CN102320752A (zh) * 2011-06-09 2012-01-18 中国科学院化学研究所 材料的图案化方法
CN103606634A (zh) * 2013-11-14 2014-02-26 中国科学院化学研究所 一种图案化金属电极及其制备方法
CN103606634B (zh) * 2013-11-14 2016-02-10 中国科学院化学研究所 一种图案化金属电极及其制备方法
CN109932354B (zh) * 2019-05-06 2021-10-08 中山大学 一种用于表面增强拉曼光谱痕量分析的原位分离富集装置及应用
CN109932354A (zh) * 2019-05-06 2019-06-25 中山大学 一种用于表面增强拉曼光谱痕量分析的原位分离富集装置及应用
CN110760847A (zh) * 2019-11-28 2020-02-07 东莞市图创智能制造有限公司 使用喷墨打印的蚀刻方法及用于蚀刻方法的喷墨打印机
CN110760847B (zh) * 2019-11-28 2022-06-17 东莞市图创智能制造有限公司 使用喷墨打印的蚀刻方法及用于蚀刻方法的喷墨打印机
CN115142064A (zh) * 2019-11-28 2022-10-04 东莞市图创智能制造有限公司 喷墨打印式蚀刻方法及具有蚀刻功能的喷墨打印机
CN115142064B (zh) * 2019-11-28 2024-03-26 东莞市图创智能制造有限公司 喷墨打印式蚀刻方法及具有蚀刻功能的喷墨打印机
CN116134587A (zh) * 2020-07-27 2023-05-16 株式会社斯库林集团 基板处理方法及基板处理装置
CN116134587B (zh) * 2020-07-27 2025-07-15 株式会社斯库林集团 基板处理方法及基板处理装置

Also Published As

Publication number Publication date
EP2245655A4 (en) 2012-11-21
KR20110020760A (ko) 2011-03-03
WO2009094711A1 (en) 2009-08-06
AU2009208384A1 (en) 2009-08-06
TW200947555A (en) 2009-11-16
US8273659B2 (en) 2012-09-25
JP2011511442A (ja) 2011-04-07
US20110111599A1 (en) 2011-05-12
EP2245655A1 (en) 2010-11-03
JP5242703B2 (ja) 2013-07-24

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Application publication date: 20110323