KR20110020760A - 선택된 물질의 패턴 식각 방법 - Google Patents

선택된 물질의 패턴 식각 방법 Download PDF

Info

Publication number
KR20110020760A
KR20110020760A KR1020107019558A KR20107019558A KR20110020760A KR 20110020760 A KR20110020760 A KR 20110020760A KR 1020107019558 A KR1020107019558 A KR 1020107019558A KR 20107019558 A KR20107019558 A KR 20107019558A KR 20110020760 A KR20110020760 A KR 20110020760A
Authority
KR
South Korea
Prior art keywords
layer
etching
treated
component
predetermined pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107019558A
Other languages
English (en)
Korean (ko)
Inventor
스튜어트 로스 웬햄
앨리슨 존 레논
아니타 윙 이 호-바일리
Original Assignee
뉴사우스 이노베이션즈 피티와이 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2008900477A external-priority patent/AU2008900477A0/en
Application filed by 뉴사우스 이노베이션즈 피티와이 리미티드 filed Critical 뉴사우스 이노베이션즈 피티와이 리미티드
Publication of KR20110020760A publication Critical patent/KR20110020760A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020107019558A 2008-02-01 2009-01-29 선택된 물질의 패턴 식각 방법 Withdrawn KR20110020760A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
AU2008900477A AU2008900477A0 (en) 2008-02-01 Method of processing
AU2008900477 2008-02-01
AU2008903289A AU2008903289A0 (en) 2008-06-27 Method for patterned etching of selected material
AU2008903289 2008-06-27
AU2008906040A AU2008906040A0 (en) 2008-11-21 Method for patterened etching of selected material
AU2008906040 2008-11-21

Publications (1)

Publication Number Publication Date
KR20110020760A true KR20110020760A (ko) 2011-03-03

Family

ID=40912168

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107019558A Withdrawn KR20110020760A (ko) 2008-02-01 2009-01-29 선택된 물질의 패턴 식각 방법

Country Status (8)

Country Link
US (1) US8273659B2 (enExample)
EP (1) EP2245655A4 (enExample)
JP (1) JP5242703B2 (enExample)
KR (1) KR20110020760A (enExample)
CN (1) CN101990705A (enExample)
AU (1) AU2009208384A1 (enExample)
TW (1) TW200947555A (enExample)
WO (1) WO2009094711A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011017740A1 (en) * 2009-08-11 2011-02-17 Newsouth Innovations Pty Limited A method for the selective delivery of material to a substrate
CA2774442A1 (en) * 2009-09-18 2011-03-24 Merck Patent Gmbh Ink jet printable etching inks and associated process
WO2011032218A1 (en) * 2009-09-18 2011-03-24 Newsouth Innovations Pty Limited Method for texturing surfaces
EP2363299B1 (en) 2010-03-05 2012-10-17 Spanolux N.V.- DIV. Balterio A method of manufacturing a floor board
KR101399419B1 (ko) * 2011-04-26 2014-06-30 엔젯 주식회사 태양전지의 전면전극 형성방법
CN102320752B (zh) * 2011-06-09 2013-06-19 中国科学院化学研究所 材料的图案化方法
WO2013062727A1 (en) * 2011-10-24 2013-05-02 Applied Materials, Inc. Method and apparatus of removing a passivation film and improving contact resistance in rear point contact solar cells
CN103091747B (zh) * 2011-10-28 2015-11-25 清华大学 一种光栅的制备方法
CN103086607B (zh) 2011-10-28 2015-08-26 清华大学 光栅的制备方法
WO2014071458A1 (en) * 2012-11-09 2014-05-15 Newsouth Innovations Pty Ltd Formation of metal contacts
US8815633B1 (en) * 2013-04-18 2014-08-26 National Tsing Hua University Method of fabricating 3D structure on CIGS material
TWI480947B (zh) * 2013-04-18 2015-04-11 Nat Univ Tsing Hua 於銅銦鎵硒製備三維結構的方法
CN103606634B (zh) * 2013-11-14 2016-02-10 中国科学院化学研究所 一种图案化金属电极及其制备方法
KR102290209B1 (ko) * 2013-12-31 2021-08-20 엔테그리스, 아이엔씨. 규소 및 게르마늄을 선택적으로 에칭하기 위한 배합물
KR20170008291A (ko) * 2014-05-20 2017-01-23 알파 메탈즈, 인코포레이티드 태양 전지 및 반도체 제작을 위한 분사가능한 잉크
WO2016149043A1 (en) * 2015-03-13 2016-09-22 Dow Global Technologies Llc Nanostructure material methods and devices
TWI593547B (zh) * 2015-11-13 2017-08-01 財團法人工業技術研究院 三維組織列印裝置、三維組織列印方法及人工皮膚
WO2017109786A1 (en) 2015-12-23 2017-06-29 Kornit Digital Ltd. Rub-resistant inkjet composition
CN109932354B (zh) * 2019-05-06 2021-10-08 中山大学 一种用于表面增强拉曼光谱痕量分析的原位分离富集装置及应用
CN110634795B (zh) * 2019-10-23 2022-12-02 京东方科技集团股份有限公司 阵列基板的制备方法、阵列基板及显示装置
CN110760847B (zh) * 2019-11-28 2022-06-17 东莞市图创智能制造有限公司 使用喷墨打印的蚀刻方法及用于蚀刻方法的喷墨打印机
JP7513454B2 (ja) * 2020-07-27 2024-07-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7580217B2 (ja) * 2020-07-27 2024-11-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置、および、処理液
US20220035251A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Methods to fabricate 2d wedge and localized encapsulation for diffractive optics
CN114106588B (zh) * 2020-08-25 2023-01-03 上海迪赢生物科技有限公司 一种用于3d喷墨法高通量核酸原位合成的功能化表面处理方法
JP7606896B2 (ja) * 2021-03-19 2024-12-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
JP7682656B2 (ja) * 2021-03-19 2025-05-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
JP7603517B2 (ja) * 2021-04-26 2024-12-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、および、基板処理装置
KR102874254B1 (ko) * 2021-07-16 2025-10-21 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조방법
CN115613032B (zh) * 2022-10-11 2024-09-20 苏州华星光电技术有限公司 蚀刻液

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325937A (ja) * 1989-06-22 1991-02-04 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04288649A (ja) 1991-02-20 1992-10-13 Mitsubishi Electric Corp メモリ装置
FR2775280B1 (fr) * 1998-02-23 2000-04-14 Saint Gobain Vitrage Procede de gravure d'une couche conductrice
AU779878B2 (en) * 1999-12-21 2005-02-17 Flexenable Limited Forming interconnects
KR100940110B1 (ko) * 1999-12-21 2010-02-02 플라스틱 로직 리미티드 잉크젯으로 제조되는 집적회로 및 전자 디바이스 제조 방법
KR100812891B1 (ko) * 2000-04-28 2008-03-11 메르크 파텐트 게엠베하 무기물 표면용 에칭 페이스트
GB2367788A (en) * 2000-10-16 2002-04-17 Seiko Epson Corp Etching using an ink jet print head
US7384862B2 (en) * 2003-06-30 2008-06-10 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor device and display device
TWI228389B (en) * 2003-12-26 2005-02-21 Ind Tech Res Inst Method for forming conductive plugs
JP4575098B2 (ja) * 2004-09-28 2010-11-04 株式会社東芝 パターン形成方法および電子デバイスの製造方法
TW200620451A (en) * 2004-11-09 2006-06-16 Univ Osaka Method for forming hole in crystal substrate, and crystal substrate having hole formed by the method
US8367551B2 (en) * 2005-03-25 2013-02-05 E I Du Pont De Nemours And Company Spin-printing of etchants and modifiers
JP4657068B2 (ja) * 2005-09-22 2011-03-23 シャープ株式会社 裏面接合型太陽電池の製造方法
JP5201789B2 (ja) * 2005-11-14 2013-06-05 シャープ株式会社 太陽電池およびその製造方法
JP2009524523A (ja) * 2006-01-25 2009-07-02 フラオンホファー−ゲゼルシャフト・ツア・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファオ 基板を精密加工するための方法および装置ならびにその使用
US7416989B1 (en) * 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
AU2008210253A1 (en) * 2007-01-31 2008-08-07 Newsouth Innovations Pty Limited Method of forming openings in selected material

Also Published As

Publication number Publication date
CN101990705A (zh) 2011-03-23
JP2011511442A (ja) 2011-04-07
EP2245655A4 (en) 2012-11-21
WO2009094711A1 (en) 2009-08-06
JP5242703B2 (ja) 2013-07-24
US8273659B2 (en) 2012-09-25
EP2245655A1 (en) 2010-11-03
TW200947555A (en) 2009-11-16
US20110111599A1 (en) 2011-05-12
AU2009208384A1 (en) 2009-08-06

Similar Documents

Publication Publication Date Title
KR20110020760A (ko) 선택된 물질의 패턴 식각 방법
TWI481693B (zh) 二組份蝕刻
US7837890B2 (en) Printable medium for the etching of silicon dioxide and silicon nitride layers
US8398877B2 (en) Method of forming openings in selected material
US20120196444A1 (en) Method for the selective delivery of material to a substrate
CN100546006C (zh) 蚀刻硅的改进方法
JP2007505487A (ja) 有機樹脂材料に開口部を形成する方法の改良
WO2011032218A1 (en) Method for texturing surfaces
EP2170611B1 (en) Fluid ejector device
Newby et al. Inkjet printing of fluorinated materials and their application to patterning organic semiconductors
US20170330780A1 (en) Method and device for treating the underside of a substrate
US20240247113A1 (en) Method of forming an aqueous polymer composition
CN101636829A (zh) 在选定材料中形成开口的方法
JP6562789B2 (ja) 除去対象物の除去方法
Lennon et al. Maskless patterned etching of silicon dioxide by inkjet printing
KR20190123855A (ko) 다중 스케일 실리콘 패턴 제조 방법 및 그 방법으로 제조된 디바이스
HK1169136B (en) Two component etching

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100901

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid