JP2011510501A5 - - Google Patents

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Publication number
JP2011510501A5
JP2011510501A5 JP2010543393A JP2010543393A JP2011510501A5 JP 2011510501 A5 JP2011510501 A5 JP 2011510501A5 JP 2010543393 A JP2010543393 A JP 2010543393A JP 2010543393 A JP2010543393 A JP 2010543393A JP 2011510501 A5 JP2011510501 A5 JP 2011510501A5
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JP
Japan
Prior art keywords
wafer
volume
etched
fluorine
etching
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Pending
Application number
JP2010543393A
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English (en)
Japanese (ja)
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JP2011510501A (ja
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Priority claimed from PCT/EP2008/055173 external-priority patent/WO2009092453A2/en
Publication of JP2011510501A publication Critical patent/JP2011510501A/ja
Publication of JP2011510501A5 publication Critical patent/JP2011510501A5/ja
Pending legal-status Critical Current

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JP2010543393A 2008-01-23 2008-04-28 太陽電池の製造方法 Pending JP2011510501A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2295808P 2008-01-23 2008-01-23
PCT/EP2008/055173 WO2009092453A2 (en) 2008-01-23 2008-04-28 Process for the manufacture of solar cells

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014245878A Division JP2015057858A (ja) 2008-01-23 2014-12-04 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JP2011510501A JP2011510501A (ja) 2011-03-31
JP2011510501A5 true JP2011510501A5 (https=) 2013-05-09

Family

ID=40786668

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2010543393A Pending JP2011510501A (ja) 2008-01-23 2008-04-28 太陽電池の製造方法
JP2014245878A Pending JP2015057858A (ja) 2008-01-23 2014-12-04 太陽電池の製造方法
JP2016175410A Expired - Fee Related JP6546889B2 (ja) 2008-01-23 2016-09-08 太陽電池の製造方法
JP2018127406A Pending JP2018152615A (ja) 2008-01-23 2018-07-04 太陽電池の製造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2014245878A Pending JP2015057858A (ja) 2008-01-23 2014-12-04 太陽電池の製造方法
JP2016175410A Expired - Fee Related JP6546889B2 (ja) 2008-01-23 2016-09-08 太陽電池の製造方法
JP2018127406A Pending JP2018152615A (ja) 2008-01-23 2018-07-04 太陽電池の製造方法

Country Status (13)

Country Link
US (1) US10453986B2 (https=)
EP (1) EP2235757B1 (https=)
JP (4) JP2011510501A (https=)
KR (3) KR20100113588A (https=)
CN (2) CN105789378A (https=)
AU (1) AU2008348838A1 (https=)
BR (1) BRPI0822196A2 (https=)
IL (1) IL206859A (https=)
MX (1) MX2010008075A (https=)
RU (1) RU2476959C2 (https=)
TW (1) TWI595675B (https=)
WO (1) WO2009092453A2 (https=)
ZA (1) ZA201005208B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2949237B1 (fr) * 2009-08-24 2011-09-30 Ecole Polytech Procede de nettoyage de la surface d'un substrat de silicium
KR20120092112A (ko) 2009-09-18 2012-08-20 솔베이 플루오르 게엠베하 상압에서 태양전지용 웨이퍼를 제조하는 방법
TW201123293A (en) * 2009-10-26 2011-07-01 Solvay Fluor Gmbh Etching process for producing a TFT matrix
WO2011071937A2 (en) * 2009-12-07 2011-06-16 Applied Materials, Inc. Method of cleaning and forming a negatively charged passivation layer over a doped region
CN102834930A (zh) * 2010-03-30 2012-12-19 应用材料公司 在扩散p型区域上方形成负电荷钝化层的方法
TWI586842B (zh) 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
WO2012035000A1 (en) 2010-09-15 2012-03-22 Solvay Sa Method for the removal of f2 and/or of2 from a gas
WO2013024041A1 (en) 2011-08-17 2013-02-21 Solvay Sa Electrolytic process for the manufacture of fluorine and an apparatus therefor
EP2860288A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2860287A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2944385A1 (en) * 2014-05-12 2015-11-18 Solvay SA A process for etching and chamber cleaning and a gas therefor
EP3038169A1 (en) * 2014-12-22 2016-06-29 Solvay SA Process for the manufacture of solar cells
EP3104418B8 (de) 2015-06-08 2018-04-04 Meyer Burger (Germany) GmbH Verfahren und vorrichtung zum texturieren einer siliziumoberfläche
KR102575017B1 (ko) 2016-11-17 2023-09-05 삼성디스플레이 주식회사 유리 기판의 결함 검출 방법
CN108550613B (zh) * 2018-05-30 2020-12-18 信利光电股份有限公司 一种显示模组
JP7256685B2 (ja) * 2019-05-16 2023-04-12 株式会社ディスコ 研削装置
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle
CN115148850B (zh) * 2022-06-27 2023-06-02 晶科能源股份有限公司 一种硅片及其制备方法、钝化处理溶液

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141811A (en) 1978-04-24 1979-02-27 Atlantic Richfield Company Plasma etching process for the manufacture of solar cells
US4249957A (en) 1979-05-30 1981-02-10 Taher Daud Copper doped polycrystalline silicon solar cell
JPH0646630B2 (ja) * 1985-06-07 1994-06-15 株式会社日立製作所 プラズマ処理方法
US4731158A (en) 1986-09-12 1988-03-15 International Business Machines Corporation High rate laser etching technique
DE3725346A1 (de) 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
JPH0362968A (ja) 1989-07-31 1991-03-19 Fujitsu Ltd 半導体装置の製造方法
JPH03138082A (ja) * 1989-10-24 1991-06-12 Furukawa Alum Co Ltd 気相ろう付方法
US5317432A (en) * 1991-09-04 1994-05-31 Sony Corporation Liquid crystal display device with a capacitor and a thin film transistor in a trench for each pixel
DE59207945D1 (de) 1991-11-11 1997-03-06 Siemens Solar Gmbh Verfahren zum Erzeugen feiner Elektrodenstruckturen
JP3186264B2 (ja) * 1992-04-23 2001-07-11 ソニー株式会社 ドライエッチング方法
JP3109253B2 (ja) * 1992-06-29 2000-11-13 ソニー株式会社 ドライエッチング方法
RU2065226C1 (ru) 1993-07-27 1996-08-10 Институт микроэлектроники РАН Способ изготовления низкоомного контакта к кремнию
US5688415A (en) 1995-05-30 1997-11-18 Ipec Precision, Inc. Localized plasma assisted chemical etching through a mask
DE19522539C2 (de) 1995-06-21 1997-06-12 Fraunhofer Ges Forschung Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
JPH09102625A (ja) 1995-07-28 1997-04-15 Kyocera Corp 太陽電池素子の製造方法
JPH10223614A (ja) * 1997-02-12 1998-08-21 Daikin Ind Ltd エッチングガスおよびクリーニングガス
US20010008227A1 (en) 1997-08-08 2001-07-19 Mitsuru Sadamoto Dry etching method of metal oxide/photoresist film laminate
US6635185B2 (en) 1997-12-31 2003-10-21 Alliedsignal Inc. Method of etching and cleaning using fluorinated carbonyl compounds
US6060400A (en) 1998-03-26 2000-05-09 The Research Foundation Of State University Of New York Highly selective chemical dry etching of silicon nitride over silicon and silicon dioxide
US5981398A (en) * 1998-04-10 1999-11-09 Taiwan Semiconductor Manufacturing Company, Ltd. Hard mask method for forming chlorine containing plasma etched layer
JP2000012517A (ja) 1998-06-26 2000-01-14 Ulvac Corp 表面処理方法
US6235214B1 (en) * 1998-12-03 2001-05-22 Applied Materials, Inc. Plasma etching of silicon using fluorinated gas mixtures
US6203671B1 (en) * 1999-03-10 2001-03-20 Alliedsignal Inc. Method of producing fluorinated compounds
JP2001028362A (ja) 1999-07-15 2001-01-30 Toshiba Corp 半導体装置の製造方法及び製造装置
JP4339990B2 (ja) 2000-08-31 2009-10-07 京セラ株式会社 シリコン基板の粗面化法
JP4112198B2 (ja) 2000-09-11 2008-07-02 財団法人地球環境産業技術研究機構 クリーニングガス及びエッチングガス、並びにチャンバークリーニング方法及びエッチング方法
JP2002329710A (ja) 2001-04-26 2002-11-15 Kyocera Corp シリコン基板の粗面化法
JP4721557B2 (ja) 2001-05-29 2011-07-13 京セラ株式会社 太陽電池用基板の粗面化法
JP4340031B2 (ja) * 2001-09-26 2009-10-07 京セラ株式会社 太陽電池用基板の粗面化方法
JP4104320B2 (ja) * 2001-11-16 2008-06-18 セントラル硝子株式会社 二フッ化カルボニルの製造方法
JP4467218B2 (ja) 2001-12-25 2010-05-26 京セラ株式会社 太陽電池用基板の粗面化法
JP4129617B2 (ja) * 2002-04-19 2008-08-06 ダイキン工業株式会社 Ｃｏｆ２の製造方法
JP2003347660A (ja) 2002-05-30 2003-12-05 Sharp Corp 窒化物半導体装置の製造方法
JP2004134577A (ja) * 2002-10-10 2004-04-30 Seiko Epson Corp 半導体薄膜の製造方法、薄膜トランジスタ、半導体装置、薄膜太陽電池、複合半導体装置の製造方法、電気光学装置及び電子機器
RU2250536C1 (ru) 2004-01-08 2005-04-20 Открытое акционерное общество "Сатурн" Солнечная батарея
US20060016459A1 (en) * 2004-05-12 2006-01-26 Mcfarlane Graham High rate etching using high pressure F2 plasma with argon dilution
JP2006049817A (ja) 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
US20060062914A1 (en) * 2004-09-21 2006-03-23 Diwakar Garg Apparatus and process for surface treatment of substrate using an activated reactive gas
US7317434B2 (en) * 2004-12-03 2008-01-08 Dupont Displays, Inc. Circuits including switches for electronic devices and methods of using the electronic devices
US20060183055A1 (en) * 2005-02-15 2006-08-17 O'neill Mark L Method for defining a feature on a substrate
US7919005B2 (en) * 2005-05-24 2011-04-05 Panasonic Corporation Dry etching method, fine structure formation method, mold and mold fabrication method
JP2006332509A (ja) 2005-05-30 2006-12-07 Kyocera Corp 粗面化法
DE102005040596B4 (de) 2005-06-17 2009-02-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Entfernung einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
WO2007049347A1 (ja) 2005-10-26 2007-05-03 Shinryo Corporation 太陽電池用シリコン基板の低反射率加工方法及び太陽電池用シリコン基板
JP2007142021A (ja) * 2005-11-16 2007-06-07 Seiko Epson Corp 順スタガ構造薄膜トランジスタの製造方法
JP5064767B2 (ja) * 2005-11-29 2012-10-31 京セラ株式会社 太陽電池素子の製造方法
RU2301477C1 (ru) 2005-12-15 2007-06-20 Государственное образовательное учреждение высшего профессионального образования Самарский государственный аэрокосмический университет им. акад. С.П. Королева Способ увеличения чувствительности и быстродействия фотоэлектрического преобразователя перемещений в код
CN101443888B (zh) * 2006-03-13 2011-03-16 内诺格雷姆公司 薄硅或者锗片以及由薄片形成的光电池
JP2007250985A (ja) * 2006-03-17 2007-09-27 Showa Denko Kk プラズマエッチング方法
KR20160062181A (ko) 2006-04-10 2016-06-01 솔베이 플루오르 게엠베하 에칭 방법
JP4153961B2 (ja) * 2006-04-25 2008-09-24 積水化学工業株式会社 シリコンのエッチング方法
WO2008043827A2 (de) 2006-10-12 2008-04-17 Centrotherm Photovoltaics Ag Verfahren zur passivierung von solarzellen
EP2183780A4 (en) * 2007-08-02 2010-07-28 Applied Materials Inc THIN FILM TRANSISTORS WITH THIN FILM SEMICONDUCTOR MATERIALS
TWI558655B (zh) 2007-12-21 2016-11-21 首威氟化物有限公司 微機電系統之製造方法
KR20120092112A (ko) 2009-09-18 2012-08-20 솔베이 플루오르 게엠베하 상압에서 태양전지용 웨이퍼를 제조하는 방법
TW201123293A (en) 2009-10-26 2011-07-01 Solvay Fluor Gmbh Etching process for producing a TFT matrix
KR20120104215A (ko) 2009-10-30 2012-09-20 솔베이(소시에떼아노님) Ｆ₂ 및 ｃｏｆ₂를 사용한 플라즈마 식각 및 플라즈마 챔버 세정 방법

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