KR20100113588A - 태양전지의 제조 방법 - Google Patents

태양전지의 제조 방법 Download PDF

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Publication number
KR20100113588A
KR20100113588A KR1020107018533A KR20107018533A KR20100113588A KR 20100113588 A KR20100113588 A KR 20100113588A KR 1020107018533 A KR1020107018533 A KR 1020107018533A KR 20107018533 A KR20107018533 A KR 20107018533A KR 20100113588 A KR20100113588 A KR 20100113588A
Authority
KR
South Korea
Prior art keywords
wafer
etching
fluorine
carbonyl fluoride
argon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107018533A
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English (en)
Korean (ko)
Inventor
마르첼로 리바
Original Assignee
솔베이 플루오르 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 솔베이 플루오르 게엠베하 filed Critical 솔베이 플루오르 게엠베하
Publication of KR20100113588A publication Critical patent/KR20100113588A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H10F71/1375—Apparatus for automatic interconnection of photovoltaic cells in a module
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Drying Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020107018533A 2008-01-23 2008-04-28 태양전지의 제조 방법 Ceased KR20100113588A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2295808P 2008-01-23 2008-01-23
US61/022,958 2008-01-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020157012833A Division KR20150063581A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Publications (1)

Publication Number Publication Date
KR20100113588A true KR20100113588A (ko) 2010-10-21

Family

ID=40786668

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020107018533A Ceased KR20100113588A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법
KR1020157012833A Ceased KR20150063581A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법
KR1020187008071A Abandoned KR20180033600A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020157012833A Ceased KR20150063581A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법
KR1020187008071A Abandoned KR20180033600A (ko) 2008-01-23 2008-04-28 태양전지의 제조 방법

Country Status (13)

Country Link
US (1) US10453986B2 (https=)
EP (1) EP2235757B1 (https=)
JP (4) JP2011510501A (https=)
KR (3) KR20100113588A (https=)
CN (2) CN105789378A (https=)
AU (1) AU2008348838A1 (https=)
BR (1) BRPI0822196A2 (https=)
IL (1) IL206859A (https=)
MX (1) MX2010008075A (https=)
RU (1) RU2476959C2 (https=)
TW (1) TWI595675B (https=)
WO (1) WO2009092453A2 (https=)
ZA (1) ZA201005208B (https=)

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TW201123293A (en) * 2009-10-26 2011-07-01 Solvay Fluor Gmbh Etching process for producing a TFT matrix
WO2011071937A2 (en) * 2009-12-07 2011-06-16 Applied Materials, Inc. Method of cleaning and forming a negatively charged passivation layer over a doped region
CN102834930A (zh) * 2010-03-30 2012-12-19 应用材料公司 在扩散p型区域上方形成负电荷钝化层的方法
TWI586842B (zh) 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
WO2012035000A1 (en) 2010-09-15 2012-03-22 Solvay Sa Method for the removal of f2 and/or of2 from a gas
WO2013024041A1 (en) 2011-08-17 2013-02-21 Solvay Sa Electrolytic process for the manufacture of fluorine and an apparatus therefor
EP2860288A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2860287A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2944385A1 (en) * 2014-05-12 2015-11-18 Solvay SA A process for etching and chamber cleaning and a gas therefor
EP3038169A1 (en) * 2014-12-22 2016-06-29 Solvay SA Process for the manufacture of solar cells
EP3104418B8 (de) 2015-06-08 2018-04-04 Meyer Burger (Germany) GmbH Verfahren und vorrichtung zum texturieren einer siliziumoberfläche
KR102575017B1 (ko) 2016-11-17 2023-09-05 삼성디스플레이 주식회사 유리 기판의 결함 검출 방법
CN108550613B (zh) * 2018-05-30 2020-12-18 信利光电股份有限公司 一种显示模组
JP7256685B2 (ja) * 2019-05-16 2023-04-12 株式会社ディスコ 研削装置
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle
CN115148850B (zh) * 2022-06-27 2023-06-02 晶科能源股份有限公司 一种硅片及其制备方法、钝化处理溶液

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Also Published As

Publication number Publication date
KR20180033600A (ko) 2018-04-03
EP2235757A2 (en) 2010-10-06
CN101926010A (zh) 2010-12-22
JP2015057858A (ja) 2015-03-26
ZA201005208B (en) 2012-01-25
AU2008348838A1 (en) 2009-07-30
MX2010008075A (es) 2010-08-04
WO2009092453A2 (en) 2009-07-30
BRPI0822196A2 (pt) 2015-06-23
CN105789378A (zh) 2016-07-20
KR20150063581A (ko) 2015-06-09
US10453986B2 (en) 2019-10-22
JP6546889B2 (ja) 2019-07-17
RU2010134889A (ru) 2012-02-27
RU2476959C2 (ru) 2013-02-27
JP2018152615A (ja) 2018-09-27
JP2017017331A (ja) 2017-01-19
IL206859A0 (en) 2010-12-30
TWI595675B (zh) 2017-08-11
WO2009092453A3 (en) 2009-12-10
JP2011510501A (ja) 2011-03-31
US20100288330A1 (en) 2010-11-18
TW201003935A (en) 2010-01-16
IL206859A (en) 2016-12-29
EP2235757B1 (en) 2016-06-08

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