JP2011248351A - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
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- JP2011248351A JP2011248351A JP2011099642A JP2011099642A JP2011248351A JP 2011248351 A JP2011248351 A JP 2011248351A JP 2011099642 A JP2011099642 A JP 2011099642A JP 2011099642 A JP2011099642 A JP 2011099642A JP 2011248351 A JP2011248351 A JP 2011248351A
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- light
- liquid crystal
- transistor
- crystal display
- display device
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- 239000011159 matrix material Substances 0.000 claims description 10
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- 230000006866 deterioration Effects 0.000 abstract description 10
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3406—Control of illumination source
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0209—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
- G09G2320/0214—Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display with crosstalk due to leakage current of pixel switch in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/041—Temperature compensation
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/10—Special adaptations of display systems for operation with variable images
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
- G09G2330/023—Power management, e.g. power saving using energy recovery or conservation
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2340/00—Aspects of display data processing
- G09G2340/04—Changes in size, position or resolution of an image
- G09G2340/0407—Resolution change, inclusive of the use of different resolutions for different screen areas
- G09G2340/0435—Change or adaptation of the frame rate of the video stream
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Liquid Crystal Display Device Control (AREA)
- Optical Filters (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011099642A JP2011248351A (ja) | 2010-04-28 | 2011-04-27 | 液晶表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010103714 | 2010-04-28 | ||
| JP2010103714 | 2010-04-28 | ||
| JP2011099642A JP2011248351A (ja) | 2010-04-28 | 2011-04-27 | 液晶表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015099668A Division JP2015200897A (ja) | 2010-04-28 | 2015-05-15 | 液晶表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011248351A true JP2011248351A (ja) | 2011-12-08 |
| JP2011248351A5 JP2011248351A5 (https=) | 2014-03-27 |
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Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011099642A Withdrawn JP2011248351A (ja) | 2010-04-28 | 2011-04-27 | 液晶表示装置 |
| JP2015099668A Withdrawn JP2015200897A (ja) | 2010-04-28 | 2015-05-15 | 液晶表示装置 |
| JP2016092867A Expired - Fee Related JP6111363B2 (ja) | 2010-04-28 | 2016-05-04 | 表示装置 |
| JP2017045966A Withdrawn JP2017120443A (ja) | 2010-04-28 | 2017-03-10 | 表示装置 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015099668A Withdrawn JP2015200897A (ja) | 2010-04-28 | 2015-05-15 | 液晶表示装置 |
| JP2016092867A Expired - Fee Related JP6111363B2 (ja) | 2010-04-28 | 2016-05-04 | 表示装置 |
| JP2017045966A Withdrawn JP2017120443A (ja) | 2010-04-28 | 2017-03-10 | 表示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9349325B2 (https=) |
| JP (4) | JP2011248351A (https=) |
| KR (1) | KR101852750B1 (https=) |
| TW (1) | TWI539210B (https=) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20170031620A (ko) | 2015-09-11 | 2017-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
| JP2017068263A (ja) * | 2015-10-01 | 2017-04-06 | 株式会社半導体エネルギー研究所 | 表示装置およびその作製方法 |
| US9964800B2 (en) | 2015-11-11 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US9977285B2 (en) | 2016-07-29 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US10043858B2 (en) | 2016-04-27 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10147780B2 (en) | 2015-10-12 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US10170528B2 (en) | 2015-08-07 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display panel and manufacturing method thereof |
| US10475869B2 (en) | 2016-08-23 | 2019-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device including display element and transistor |
| US10515609B2 (en) | 2016-06-30 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and operation method thereof, and electronic device |
| US10672609B2 (en) | 2016-06-15 | 2020-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the same, and electronic device |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8330492B2 (en) | 2006-06-02 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| WO2013061895A1 (en) | 2011-10-28 | 2013-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9076871B2 (en) * | 2011-11-30 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI520398B (zh) | 2012-06-15 | 2016-02-01 | 群康科技(深圳)有限公司 | 有機發光裝置及包含其之影像顯示系統 |
| WO2014077295A1 (en) | 2012-11-15 | 2014-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2016066065A (ja) | 2014-09-05 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 表示装置、および電子機器 |
| KR20170091139A (ko) | 2014-12-01 | 2017-08-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 상기 표시 장치를 갖는 표시 모듈, 및 상기 표시 장치 또는 상기 표시 모듈을 갖는 전자 기기 |
| WO2017068454A1 (en) | 2015-10-23 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, input/output device, and data processing device |
| JP7050460B2 (ja) | 2016-11-22 | 2022-04-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11295717A (ja) * | 1998-04-13 | 1999-10-29 | Hitachi Ltd | 液晶表示装置 |
| JP2001312253A (ja) * | 2000-04-28 | 2001-11-09 | Sharp Corp | 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器 |
| JP2003195303A (ja) * | 2001-12-28 | 2003-07-09 | Seiko Epson Corp | 照明装置とこれを用いた液晶装置及び電子機器 |
| JP2004272270A (ja) * | 2003-03-11 | 2004-09-30 | Samsung Electronics Co Ltd | 液晶表示装置の駆動装置及びその方法 |
| JP2007142195A (ja) * | 2005-11-18 | 2007-06-07 | Idemitsu Kosan Co Ltd | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル |
| JP2009139939A (ja) * | 2007-11-14 | 2009-06-25 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2009277702A (ja) * | 2008-05-12 | 2009-11-26 | Canon Inc | 半導体素子の閾値電圧の制御方法 |
| JP2010026334A (ja) * | 2008-07-22 | 2010-02-04 | Toyo Ink Mfg Co Ltd | カラーフィルタ用青色着色組成物、カラーフィルタおよびカラー表示装置 |
Family Cites Families (136)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JP2669869B2 (ja) | 1988-10-18 | 1997-10-29 | 三洋電機株式会社 | 液晶表示装置 |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| WO1997006554A2 (en) | 1995-08-03 | 1997-02-20 | Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JP3740235B2 (ja) * | 1996-12-20 | 2006-02-01 | キヤノン株式会社 | 撮像装置及び撮像記録再生装置 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| CN1220098C (zh) | 2000-04-28 | 2005-09-21 | 夏普株式会社 | 显示器件、显示器件驱动方法和装有显示器件的电子设备 |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
| US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| KR20070116888A (ko) | 2004-03-12 | 2007-12-11 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 산화물 및 박막 트랜지스터 |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| JP4573552B2 (ja) | 2004-03-29 | 2010-11-04 | 富士通株式会社 | 液晶表示装置 |
| US7733441B2 (en) | 2004-06-03 | 2010-06-08 | Semiconductor Energy Labortory Co., Ltd. | Organic electroluminescent lighting system provided with an insulating layer containing fluorescent material |
| JP4646702B2 (ja) * | 2004-06-03 | 2011-03-09 | 株式会社半導体エネルギー研究所 | 照明装置及びその作製方法 |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP4785386B2 (ja) | 2005-01-31 | 2011-10-05 | 三洋電機株式会社 | 有機エレクトロルミネッセント素子及び有機エレクトロルミネッセント表示装置 |
| TWI382079B (zh) | 2004-07-30 | 2013-01-11 | Sanyo Electric Co | 有機電場發光元件及有機電場發光顯示裝置 |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| JP2006079251A (ja) | 2004-09-08 | 2006-03-23 | Hitachi Information Systems Ltd | コマンド実行制御システムおよび制御方法、ならびにそのプログラム |
| JP2006084758A (ja) | 2004-09-16 | 2006-03-30 | Seiko Epson Corp | 電気光学装置用駆動回路及び方法、電気光学装置、並びに電子機器 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| JP4635551B2 (ja) | 2004-10-06 | 2011-02-23 | ソニー株式会社 | カラー液晶表示装置 |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| BRPI0517560B8 (pt) | 2004-11-10 | 2018-12-11 | Canon Kk | transistor de efeito de campo |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| CA2585063C (en) | 2004-11-10 | 2013-01-15 | Canon Kabushiki Kaisha | Light-emitting device |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| EP2453481B1 (en) | 2004-11-10 | 2017-01-11 | Canon Kabushiki Kaisha | Field effect transistor with amorphous oxide |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
| TWI505473B (zh) | 2005-01-28 | 2015-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| JP2007010902A (ja) | 2005-06-29 | 2007-01-18 | Toyota Industries Corp | 液晶表示装置 |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP4560502B2 (ja) | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| US8013240B2 (en) | 2005-11-02 | 2011-09-06 | The Trustees Of Princeton University | Organic photovoltaic cells utilizing ultrathin sensitizing layer |
| US7982130B2 (en) | 2008-05-01 | 2011-07-19 | The Regents Of The University Of Michigan | Polymer wrapped carbon nanotube near-infrared photovoltaic devices |
| US8017863B2 (en) | 2005-11-02 | 2011-09-13 | The Regents Of The University Of Michigan | Polymer wrapped carbon nanotube near-infrared photoactive devices |
| US7947897B2 (en) | 2005-11-02 | 2011-05-24 | The Trustees Of Princeton University | Organic photovoltaic cells utilizing ultrathin sensitizing layer |
| KR20090115222A (ko) | 2005-11-15 | 2009-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| US7998372B2 (en) | 2005-11-18 | 2011-08-16 | Idemitsu Kosan Co., Ltd. | Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
| JP5177999B2 (ja) | 2006-12-05 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| JP4966176B2 (ja) | 2007-02-09 | 2012-07-04 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子 |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| KR20080090230A (ko) * | 2007-04-04 | 2008-10-08 | 삼성전자주식회사 | 디스플레이장치 및 그 제어방법 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
| JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| JP2009223188A (ja) | 2008-03-18 | 2009-10-01 | Dainippon Printing Co Ltd | 駆動素子アレイ及びその製造方法並びに表示装置 |
| JP5325446B2 (ja) | 2008-04-16 | 2013-10-23 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| JP5476061B2 (ja) | 2008-07-30 | 2014-04-23 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
| TWI495108B (zh) | 2008-07-31 | 2015-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| JP5329342B2 (ja) | 2008-09-01 | 2013-10-30 | 株式会社半導体エネルギー研究所 | 発光素子 |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| KR101988819B1 (ko) | 2009-10-16 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 이를 구비한 전자 장치 |
| KR101865546B1 (ko) | 2009-10-16 | 2018-06-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
| KR101835155B1 (ko) | 2009-10-30 | 2018-03-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치, 액정 표시 장치의 구동 방법 및 액정 표시 장치를 포함하는 전자 기기 |
| KR20230174763A (ko) | 2009-11-13 | 2023-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| CN102648490B (zh) | 2009-11-30 | 2016-08-17 | 株式会社半导体能源研究所 | 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备 |
| KR101840623B1 (ko) | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
| KR101763660B1 (ko) | 2009-12-18 | 2017-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 구동 방법 |
| KR101883331B1 (ko) | 2010-01-20 | 2018-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치의 구동 방법 |
| WO2011089832A1 (en) | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving display device and liquid crystal display device |
| WO2011099376A1 (en) | 2010-02-12 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
-
2011
- 2011-04-25 US US13/093,157 patent/US9349325B2/en not_active Expired - Fee Related
- 2011-04-26 KR KR1020110038814A patent/KR101852750B1/ko active Active
- 2011-04-26 TW TW100114440A patent/TWI539210B/zh not_active IP Right Cessation
- 2011-04-27 JP JP2011099642A patent/JP2011248351A/ja not_active Withdrawn
-
2015
- 2015-05-15 JP JP2015099668A patent/JP2015200897A/ja not_active Withdrawn
-
2016
- 2016-04-11 US US15/095,528 patent/US10068533B2/en not_active Expired - Fee Related
- 2016-05-04 JP JP2016092867A patent/JP6111363B2/ja not_active Expired - Fee Related
-
2017
- 2017-03-10 JP JP2017045966A patent/JP2017120443A/ja not_active Withdrawn
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11295717A (ja) * | 1998-04-13 | 1999-10-29 | Hitachi Ltd | 液晶表示装置 |
| JP2001312253A (ja) * | 2000-04-28 | 2001-11-09 | Sharp Corp | 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器 |
| JP2003195303A (ja) * | 2001-12-28 | 2003-07-09 | Seiko Epson Corp | 照明装置とこれを用いた液晶装置及び電子機器 |
| JP2004272270A (ja) * | 2003-03-11 | 2004-09-30 | Samsung Electronics Co Ltd | 液晶表示装置の駆動装置及びその方法 |
| JP2007142195A (ja) * | 2005-11-18 | 2007-06-07 | Idemitsu Kosan Co Ltd | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ、アクティブマトリックス駆動表示パネル |
| JP2009139939A (ja) * | 2007-11-14 | 2009-06-25 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
| JP2009277702A (ja) * | 2008-05-12 | 2009-11-26 | Canon Inc | 半導体素子の閾値電圧の制御方法 |
| JP2010026334A (ja) * | 2008-07-22 | 2010-02-04 | Toyo Ink Mfg Co Ltd | カラーフィルタ用青色着色組成物、カラーフィルタおよびカラー表示装置 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10170528B2 (en) | 2015-08-07 | 2019-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Display panel and manufacturing method thereof |
| KR20170031620A (ko) | 2015-09-11 | 2017-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작 방법 |
| JP2017068263A (ja) * | 2015-10-01 | 2017-04-06 | 株式会社半導体エネルギー研究所 | 表示装置およびその作製方法 |
| US9837478B2 (en) | 2015-10-01 | 2017-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| JP2022033782A (ja) * | 2015-10-01 | 2022-03-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
| US10147780B2 (en) | 2015-10-12 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9964800B2 (en) | 2015-11-11 | 2018-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US10043858B2 (en) | 2016-04-27 | 2018-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
| US10672609B2 (en) | 2016-06-15 | 2020-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method of the same, and electronic device |
| US10515609B2 (en) | 2016-06-30 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and operation method thereof, and electronic device |
| US9977285B2 (en) | 2016-07-29 | 2018-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| US10475869B2 (en) | 2016-08-23 | 2019-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device including display element and transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015200897A (ja) | 2015-11-12 |
| TWI539210B (zh) | 2016-06-21 |
| KR20110120228A (ko) | 2011-11-03 |
| KR101852750B1 (ko) | 2018-04-30 |
| JP2016173586A (ja) | 2016-09-29 |
| TW201202802A (en) | 2012-01-16 |
| US20110267330A1 (en) | 2011-11-03 |
| US9349325B2 (en) | 2016-05-24 |
| JP2017120443A (ja) | 2017-07-06 |
| US20160225325A1 (en) | 2016-08-04 |
| JP6111363B2 (ja) | 2017-04-05 |
| US10068533B2 (en) | 2018-09-04 |
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