JP2011085923A5 - Method of manufacturing light emitting device - Google Patents

Claims (4)

Forming a release layer on the first substrate,
Forming a first transistor and a second transistor on the release layer;
Forming a first electrode layer electrically connected to the first transistor;
Using the release layer, the first transistor, the second transistor, and the first electrode layer are transferred from the first substrate onto the second substrate;
The first transistor, the second transistor, and the first electrode layer transposed on the second substrate are transposed on a third substrate;
Forming an EL layer on the first electrode layer transposed on the third substrate;
Forming a second electrode layer on the EL layer;
The first transistor and the second transistor have an oxide semiconductor layer,
The method for manufacturing a light-emitting device, wherein the third substrate has flexibility. In claim 1,
A method for manufacturing a light emitting device, comprising providing a flexible metal substrate over the second electrode layer. The method for manufacturing a light emitting device according to claim 1 or claim 2, characterized in that the heat treatment for dehydration or dehydrogenation in the oxide semiconductor layer. The method for manufacturing a light-emitting device according to any one of claims 1 to 3 , wherein a silicon oxide film or an aluminum oxide film formed by a sputtering method in contact with the oxide semiconductor layer is formed.