JP2011014565A - マルチチップモジュールおよびプリント基板ユニット並びに電子機器 - Google Patents
マルチチップモジュールおよびプリント基板ユニット並びに電子機器 Download PDFInfo
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- JP2011014565A JP2011014565A JP2009154641A JP2009154641A JP2011014565A JP 2011014565 A JP2011014565 A JP 2011014565A JP 2009154641 A JP2009154641 A JP 2009154641A JP 2009154641 A JP2009154641 A JP 2009154641A JP 2011014565 A JP2011014565 A JP 2011014565A
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
【解決手段】金属バンプ23では、アルミニウムに対する第2金属体28の金銀合金の拡散速度は第1金属体27の金の拡散速度より小さく設定される。したがって、第1金属体27に比べて第2金属体28と金属パッド24との間で金属間化合物の成長は抑制される。隣接する金属パッド22、24への金属間化合物のはみ出しは抑制される。短絡の発生は抑制される。しかも、第2金属体28は金銀合金から形成されることから、第2金属体28と金属パッド22、24との間で金属間化合物の生成は抑制される。たとえ第1金属体27と金属パッド22、24との間でカーケンドールボイドが形成されても、金属パッド22、24との間では第2金属体28で導通が維持される。
【選択図】図3
Description
Claims (8)
- マルチチップモジュールであって、
パッケージ基板と、
前記パッケージ基板上にフリップチップ接合され、表面に第1金属パッドが配設される第1半導体素子と、
前記第1金属パッドに向き合わせられる第2金属パッドが底面に配設される第2半導体素子と、
相互に向き合う前記第1金属パッドおよび前記第2金属パッドに接合される導電バンプとを備え、
前記導電バンプは、
第1金属体と、
前記第1金属体の拡散速度よりも拡散速度が小さい第2金属体とから形成されることを特徴とするマルチチップモジュール。 - 請求項1に記載のマルチチップモジュールにおいて、前記導電バンプは、前記第1金属体の外周面を前記第1金属体の拡散速度よりも拡散速度が小さい前記第2金属体で覆って形成される2重バンプであることを特徴とするマルチチップモジュール。
- 請求項1に記載のマルチチップモジュールにおいて、同一の前記第1金属パッドまたは同一の前記第2金属パッドに前記第1金属体および前記第2金属体が形成されることを特徴とするマルチチップモジュール。
- 請求項3に記載のマルチチップモジュールにおいて、同一の前記第1金属パッドまたは同一の前記第2金属パッドでは、前記第1金属体が接合される部分の幅が、前記第2金属体が接合される部分の幅より大きく形成されることを特徴とするマルチチップモジュール。
- 請求項1〜4のいずれか1項に記載のマルチチップモジュールにおいて、前記第1金属パッドおよび前記第2金属パッドはアルミニウムから形成され、前記第1金属体は金から形成され、前記第2金属体は金および金を含む合金から形成されることを特徴とするマルチチップモジュール。
- 請求項1〜5のいずれか1項に記載のマルチチップモジュールにおいて、前記第1半導体素子および前記第2半導体素子の間で前記第1金属体および前記第2金属体を含有する空間は熱硬化性樹脂で満たされることを特徴とするマルチチップモジュール。
- プリント基板ユニットであって、
パッケージ基板と、前記パッケージ基板上にフリップチップ接合され、表面に第1金属パッドが配設される第1半導体素子と、前記第1金属パッドに向き合わせられる第2金属パッドが底面に配設される第2半導体素子と、相互に向き合う前記第1金属パッドおよび前記第2金属パッドに接合される導電バンプとを有し、前記導電バンプは、第1金属体と、前記第1金属体の拡散速度よりも拡散速度が小さい第2金属体とから形成されるマルチチップモジュールと、
前記マルチチップモジュールが実装されるプリント基板とを備えることを特徴とするプリント基板ユニット。 - 請求項7に記載のプリント基板ユニットが搭載されていることを特徴とする電子機器。
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JP2009154641A JP5316261B2 (ja) | 2009-06-30 | 2009-06-30 | マルチチップモジュールおよびプリント基板ユニット並びに電子機器 |
US12/821,938 US8395904B2 (en) | 2009-06-30 | 2010-06-23 | Multichip module, printed circuit board unit, and electronic apparatus |
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