JP2010272758A - 被エッチング材のプラズマエッチング方法 - Google Patents

被エッチング材のプラズマエッチング方法 Download PDF

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Publication number
JP2010272758A
JP2010272758A JP2009124508A JP2009124508A JP2010272758A JP 2010272758 A JP2010272758 A JP 2010272758A JP 2009124508 A JP2009124508 A JP 2009124508A JP 2009124508 A JP2009124508 A JP 2009124508A JP 2010272758 A JP2010272758 A JP 2010272758A
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JP
Japan
Prior art keywords
etched
mask
plasma etching
etching method
etching
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Withdrawn
Application number
JP2009124508A
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English (en)
Japanese (ja)
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JP2010272758A5 (enExample
Inventor
Masatoshi Miyake
賢稔 三宅
Nobuyuki Negishi
伸幸 根岸
Masatoshi Oyama
正俊 尾山
Tadamitsu Kanekiyo
任光 金清
Masaru Izawa
勝 伊澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2009124508A priority Critical patent/JP2010272758A/ja
Priority to TW098124875A priority patent/TW201042719A/zh
Priority to KR1020090069388A priority patent/KR101167624B1/ko
Priority to US12/512,084 priority patent/US20100297849A1/en
Publication of JP2010272758A publication Critical patent/JP2010272758A/ja
Publication of JP2010272758A5 publication Critical patent/JP2010272758A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
JP2009124508A 2009-05-22 2009-05-22 被エッチング材のプラズマエッチング方法 Withdrawn JP2010272758A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009124508A JP2010272758A (ja) 2009-05-22 2009-05-22 被エッチング材のプラズマエッチング方法
TW098124875A TW201042719A (en) 2009-05-22 2009-07-23 Plasma etching method for etching an object
KR1020090069388A KR101167624B1 (ko) 2009-05-22 2009-07-29 피에칭재의 플라즈마 에칭방법
US12/512,084 US20100297849A1 (en) 2009-05-22 2009-07-30 Plasma etching method for etching an object

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009124508A JP2010272758A (ja) 2009-05-22 2009-05-22 被エッチング材のプラズマエッチング方法

Publications (2)

Publication Number Publication Date
JP2010272758A true JP2010272758A (ja) 2010-12-02
JP2010272758A5 JP2010272758A5 (enExample) 2012-06-07

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Family Applications (1)

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JP2009124508A Withdrawn JP2010272758A (ja) 2009-05-22 2009-05-22 被エッチング材のプラズマエッチング方法

Country Status (4)

Country Link
US (1) US20100297849A1 (enExample)
JP (1) JP2010272758A (enExample)
KR (1) KR101167624B1 (enExample)
TW (1) TW201042719A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195576A (ja) * 2011-02-28 2012-10-11 Tokyo Electron Ltd プラズマエッチング方法及び半導体装置の製造方法並びにコンピュータ記憶媒体
JP2012204806A (ja) * 2011-03-28 2012-10-22 Tokyo Electron Ltd 判定方法、制御方法、判定装置、パターン形成システム及びプログラム
KR20130026996A (ko) * 2011-09-06 2013-03-14 램 리써치 코포레이션 3ｄ 플래시 구조들의 에칭 프로세스
JP2016197680A (ja) * 2015-04-06 2016-11-24 東京エレクトロン株式会社 エッチング方法
JP2019536057A (ja) * 2016-10-18 2019-12-12 ケーエルエー コーポレイション Ｘ線スキャトロメトリシステムのフルビーム計測
JP2020141033A (ja) * 2019-02-27 2020-09-03 東京エレクトロン株式会社 堆積処理方法及びプラズマ処理装置
JP2023121650A (ja) * 2022-02-21 2023-08-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム

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US8703619B2 (en) 2012-01-19 2014-04-22 Headway Technologies, Inc. Taper-etching method and method of manufacturing near-field light generator
US8975185B2 (en) * 2012-11-26 2015-03-10 Spansion, Llc Forming charge trap separation in a flash memory semiconductor device
JP2014225501A (ja) * 2013-05-15 2014-12-04 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6396699B2 (ja) * 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
US9934984B2 (en) 2015-09-09 2018-04-03 International Business Machines Corporation Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication
CN106548933B (zh) * 2015-09-23 2020-07-17 北京北方华创微电子装备有限公司 一种刻蚀工艺
JP2018046185A (ja) * 2016-09-15 2018-03-22 東京エレクトロン株式会社 酸化シリコン及び窒化シリコンを互いに選択的にエッチングする方法

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JP3018532B2 (ja) * 1991-02-26 2000-03-13 ソニー株式会社 ドライエッチング方法
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JP2884970B2 (ja) * 1992-11-18 1999-04-19 株式会社デンソー 半導体のドライエッチング方法
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JP2001110784A (ja) * 1999-10-12 2001-04-20 Hitachi Ltd プラズマ処理装置および処理方法
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012195576A (ja) * 2011-02-28 2012-10-11 Tokyo Electron Ltd プラズマエッチング方法及び半導体装置の製造方法並びにコンピュータ記憶媒体
JP2012204806A (ja) * 2011-03-28 2012-10-22 Tokyo Electron Ltd 判定方法、制御方法、判定装置、パターン形成システム及びプログラム
US9396911B2 (en) 2011-03-28 2016-07-19 Tokyo Electron Limited Determination method, control method, determination apparatus, pattern forming system and program
KR20130026996A (ko) * 2011-09-06 2013-03-14 램 리써치 코포레이션 3ｄ 플래시 구조들의 에칭 프로세스
JP2013080909A (ja) * 2011-09-06 2013-05-02 Lam Research Corporation ３ｄフラッシュ構造用のエッチングプロセス
KR101979957B1 (ko) * 2011-09-06 2019-05-17 램 리써치 코포레이션 3ｄ 플래시 구조들의 에칭 프로세스
JP2016197680A (ja) * 2015-04-06 2016-11-24 東京エレクトロン株式会社 エッチング方法
JP2019536057A (ja) * 2016-10-18 2019-12-12 ケーエルエー コーポレイション Ｘ線スキャトロメトリシステムのフルビーム計測
JP2020141033A (ja) * 2019-02-27 2020-09-03 東京エレクトロン株式会社 堆積処理方法及びプラズマ処理装置
JP2023121650A (ja) * 2022-02-21 2023-08-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム
JP7721458B2 (ja) 2022-02-21 2025-08-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理システム

Also Published As

Publication number Publication date
US20100297849A1 (en) 2010-11-25
KR101167624B1 (ko) 2012-07-20
TW201042719A (en) 2010-12-01
KR20100126149A (ko) 2010-12-01

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