JP2010272622A5 - - Google Patents

Download PDF

Info

Publication number
JP2010272622A5
JP2010272622A5 JP2009121857A JP2009121857A JP2010272622A5 JP 2010272622 A5 JP2010272622 A5 JP 2010272622A5 JP 2009121857 A JP2009121857 A JP 2009121857A JP 2009121857 A JP2009121857 A JP 2009121857A JP 2010272622 A5 JP2010272622 A5 JP 2010272622A5
Authority
JP
Japan
Prior art keywords
bonding pad
protective film
bonding
region
peripheral portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009121857A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010272622A (ja
JP5160498B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2009121857A external-priority patent/JP5160498B2/ja
Priority to JP2009121857A priority Critical patent/JP5160498B2/ja
Priority to TW106121861A priority patent/TWI646644B/zh
Priority to TW105120867A priority patent/TWI596724B/zh
Priority to TW099112370A priority patent/TWI548051B/zh
Priority to CN201610424138.3A priority patent/CN106024744A/zh
Priority to CN201010176519.7A priority patent/CN101894816B/zh
Priority to CN201410184793.7A priority patent/CN103943580A/zh
Priority to US12/778,123 priority patent/US8946705B2/en
Publication of JP2010272622A publication Critical patent/JP2010272622A/ja
Publication of JP2010272622A5 publication Critical patent/JP2010272622A5/ja
Publication of JP5160498B2 publication Critical patent/JP5160498B2/ja
Application granted granted Critical
Priority to US14/589,547 priority patent/US20150137125A1/en
Priority to US15/280,618 priority patent/US9824944B2/en
Priority to US15/785,531 priority patent/US10163740B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009121857A 2009-05-20 2009-05-20 半導体装置 Active JP5160498B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2009121857A JP5160498B2 (ja) 2009-05-20 2009-05-20 半導体装置
TW106121861A TWI646644B (zh) 2009-05-20 2010-04-20 半導體裝置
TW105120867A TWI596724B (zh) 2009-05-20 2010-04-20 Semiconductor device
TW099112370A TWI548051B (zh) 2009-05-20 2010-04-20 Semiconductor device
CN201410184793.7A CN103943580A (zh) 2009-05-20 2010-05-10 半导体器件
CN201010176519.7A CN101894816B (zh) 2009-05-20 2010-05-10 半导体器件
CN201610424138.3A CN106024744A (zh) 2009-05-20 2010-05-10 半导体器件
US12/778,123 US8946705B2 (en) 2009-05-20 2010-05-12 Semiconductor device
US14/589,547 US20150137125A1 (en) 2009-05-20 2015-01-05 Semiconductor device
US15/280,618 US9824944B2 (en) 2009-05-20 2016-09-29 Semiconductor device
US15/785,531 US10163740B2 (en) 2009-05-20 2017-10-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009121857A JP5160498B2 (ja) 2009-05-20 2009-05-20 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012271050A Division JP5331934B2 (ja) 2012-12-12 2012-12-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2010272622A JP2010272622A (ja) 2010-12-02
JP2010272622A5 true JP2010272622A5 (enExample) 2012-04-05
JP5160498B2 JP5160498B2 (ja) 2013-03-13

Family

ID=43103961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009121857A Active JP5160498B2 (ja) 2009-05-20 2009-05-20 半導体装置

Country Status (4)

Country Link
US (4) US8946705B2 (enExample)
JP (1) JP5160498B2 (enExample)
CN (3) CN106024744A (enExample)
TW (3) TWI548051B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8115321B2 (en) * 2009-04-30 2012-02-14 Lsi Corporation Separate probe and bond regions of an integrated circuit
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5618873B2 (ja) * 2011-03-15 2014-11-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2013062328A (ja) * 2011-09-12 2013-04-04 Toshiba Corp 半導体装置
JP5926988B2 (ja) 2012-03-08 2016-05-25 ルネサスエレクトロニクス株式会社 半導体装置
US9111847B2 (en) * 2012-06-15 2015-08-18 Infineon Technologies Ag Method for manufacturing a chip package, a method for manufacturing a wafer level package, a chip package and a wafer level package
WO2013010512A2 (en) * 2012-10-22 2013-01-24 Spreadtrum Communications (Shanghai) Co., Ltd. Apparatus and method of electrical testing for flip chip
CN103107128B (zh) * 2013-01-14 2014-12-17 武汉新芯集成电路制造有限公司 一种三维芯片结构的金属键合的方法
JP6149503B2 (ja) * 2013-05-17 2017-06-21 住友電気工業株式会社 半導体装置
JP5858952B2 (ja) * 2013-05-20 2016-02-10 三菱電機株式会社 半導体装置の製造方法
JP6235353B2 (ja) * 2014-01-22 2017-11-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6279339B2 (ja) * 2014-02-07 2018-02-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6215755B2 (ja) * 2014-04-14 2017-10-18 ルネサスエレクトロニクス株式会社 半導体装置
JP6522980B2 (ja) * 2015-02-18 2019-05-29 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9881870B2 (en) 2015-12-30 2018-01-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
JP7127413B2 (ja) * 2018-08-03 2022-08-30 富士電機株式会社 抵抗素子及びその製造方法
CN109166838A (zh) * 2018-08-29 2019-01-08 上海华虹宏力半导体制造有限公司 顶层金属键合垫的引出结构及其制造方法
CN109719381A (zh) * 2019-02-21 2019-05-07 巴中市特兴智能科技有限公司 一种自动焊接键合金线的工艺方法
US11610846B2 (en) 2019-04-12 2023-03-21 Adeia Semiconductor Bonding Technologies Inc. Protective elements for bonded structures including an obstructive element
US11205625B2 (en) 2019-04-12 2021-12-21 Invensas Bonding Technologies, Inc. Wafer-level bonding of obstructive elements
US11373963B2 (en) 2019-04-12 2022-06-28 Invensas Bonding Technologies, Inc. Protective elements for bonded structures
US11385278B2 (en) 2019-05-23 2022-07-12 Invensas Bonding Technologies, Inc. Security circuitry for bonded structures
JP7200066B2 (ja) * 2019-08-22 2023-01-06 ルネサスエレクトロニクス株式会社 半導体装置
KR102737535B1 (ko) * 2019-11-28 2024-12-02 엘지디스플레이 주식회사 표시 장치
JP7548942B2 (ja) * 2020-03-27 2024-09-10 京東方科技集團股▲ふん▼有限公司 表示パネル及び表示装置
KR102791224B1 (ko) * 2020-04-20 2025-04-07 에스케이하이닉스 주식회사 서로 엇갈리게 배열되는 본드 핑거를 구비하는 패키지 기판을 포함하는 반도체 패키지
US11043435B1 (en) * 2020-05-18 2021-06-22 Innogrit Technologies Co., Ltd. Semiconductor die with hybrid wire bond pads
WO2023014616A1 (en) 2021-08-02 2023-02-09 Invensas Bonding Technologies, Inc. Protective semiconductor elements for bonded structures
TWI836611B (zh) * 2022-09-19 2024-03-21 華東科技股份有限公司 晶墊具保護層的晶片封裝結構

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220034A (ja) * 1988-07-07 1990-01-23 Matsushita Electron Corp 半導体装置
JPH0379055A (ja) 1989-08-23 1991-04-04 New Japan Radio Co Ltd 半導体素子
JP3022819B2 (ja) * 1997-08-27 2000-03-21 日本電気アイシーマイコンシステム株式会社 半導体集積回路装置
JP3843624B2 (ja) 1998-11-27 2006-11-08 松下電器産業株式会社 半導体集積回路装置及び半導体集積回路装置の組立方法
JP2001338955A (ja) 2000-05-29 2001-12-07 Texas Instr Japan Ltd 半導体装置及びその製造方法
KR100868419B1 (ko) * 2001-06-07 2008-11-11 가부시끼가이샤 르네사스 테크놀로지 반도체장치 및 그 제조방법
JP2003142485A (ja) * 2001-11-01 2003-05-16 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4065799B2 (ja) 2003-03-12 2008-03-26 株式会社ルネサステクノロジ 超音波接合装置および方法
US7057296B2 (en) * 2003-10-29 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding pad structure
JP4803966B2 (ja) * 2004-03-31 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
JP4585327B2 (ja) * 2005-02-08 2010-11-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2006303452A (ja) * 2005-03-25 2006-11-02 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US20070075396A1 (en) * 2005-09-30 2007-04-05 Elpida Memory, Inc. Semiconductor device and manufacturing method thereof
KR100727490B1 (ko) * 2005-12-08 2007-06-13 삼성전자주식회사 본딩 영역과 프로빙 영역을 구분하기 위한 식별표시가구비된 반도체 장치 및 그 제조방법
JP5050384B2 (ja) * 2006-03-31 2012-10-17 富士通セミコンダクター株式会社 半導体装置およびその製造方法
JP4951276B2 (ja) 2006-05-29 2012-06-13 ルネサスエレクトロニクス株式会社 半導体チップおよび半導体装置
TWI297924B (en) * 2006-06-14 2008-06-11 Novatek Microelectronics Corp Chip structure
US7397127B2 (en) * 2006-10-06 2008-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding and probing pad structures
JP5064158B2 (ja) * 2007-09-18 2012-10-31 新光電気工業株式会社 半導体装置とその製造方法
JP2009218264A (ja) * 2008-03-07 2009-09-24 Elpida Memory Inc 半導体装置
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5443827B2 (ja) * 2009-05-20 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP2010272622A5 (enExample)
JP2009246218A5 (enExample)
JP2013016624A5 (ja) 半導体装置
JP2010245417A5 (ja) 半導体装置
JP2010251537A5 (ja) 半導体集積回路装置
JP2013247131A5 (ja) 半導体装置
JP2007251159A5 (enExample)
JP2010272621A5 (ja) 半導体装置
WO2012138868A3 (en) Exposed die package for direct surface mounting
JP2010147281A5 (ja) 半導体装置
TWI456675B (zh) 半導體元件、半導體封裝元件及其製作方法
TW201614789A (en) Semiconductor device and method of forming pad layout for flipchip semiconductor die
JP2010283236A5 (enExample)
JP2012028429A5 (ja) 半導体装置
EP3267485A3 (en) Sensor package structure
JP2009146969A5 (enExample)
JP2016127116A5 (enExample)
TW201613435A (en) Display device and fabricating method thereof
TW200707676A (en) Thin IC package for improving heat dissipation from chip backside
JP2010287737A5 (enExample)
WO2012116157A3 (en) Chip module embedded in pcb substrate
JP2010251625A5 (ja) 半導体装置
JP2012164825A5 (enExample)
JP2012198375A5 (enExample)
JP2014027156A5 (enExample)