JP2010248547A5 - - Google Patents
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- Publication number
- JP2010248547A5 JP2010248547A5 JP2009096937A JP2009096937A JP2010248547A5 JP 2010248547 A5 JP2010248547 A5 JP 2010248547A5 JP 2009096937 A JP2009096937 A JP 2009096937A JP 2009096937 A JP2009096937 A JP 2009096937A JP 2010248547 A5 JP2010248547 A5 JP 2010248547A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- manufacturing
- semiconductor device
- oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 36
- 238000004519 manufacturing process Methods 0.000 claims 21
- 239000010408 film Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- 238000004544 sputter deposition Methods 0.000 claims 7
- 239000011701 zinc Substances 0.000 claims 6
- 239000007789 gas Substances 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 3
- 238000001312 dry etching Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 150000007522 mineralic acids Chemical class 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 150000007524 organic acids Chemical class 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 2
- 229910052716 thallium Inorganic materials 0.000 claims 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000005566 electron beam evaporation Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 238000007733 ion plating Methods 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 235000006408 oxalic acid Nutrition 0.000 claims 1
- 238000001552 radio frequency sputter deposition Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009096937A JP5724157B2 (ja) | 2009-04-13 | 2009-04-13 | 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 |
| US12/662,305 US20100330738A1 (en) | 2009-04-13 | 2010-04-09 | Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009096937A JP5724157B2 (ja) | 2009-04-13 | 2009-04-13 | 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010248547A JP2010248547A (ja) | 2010-11-04 |
| JP2010248547A5 true JP2010248547A5 (https=) | 2012-05-10 |
| JP5724157B2 JP5724157B2 (ja) | 2015-05-27 |
Family
ID=43311201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009096937A Active JP5724157B2 (ja) | 2009-04-13 | 2009-04-13 | 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20100330738A1 (https=) |
| JP (1) | JP5724157B2 (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130009978A (ko) * | 2010-02-26 | 2013-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 소자의 제조 방법 및 성막 장치 |
| US9293597B2 (en) | 2010-07-30 | 2016-03-22 | Hitachi, Ltd. | Oxide semiconductor device |
| JP5540972B2 (ja) | 2010-07-30 | 2014-07-02 | 日立金属株式会社 | 酸化物半導体ターゲットおよび酸化物半導体膜の製造方法 |
| TWI492368B (zh) * | 2011-01-14 | 2015-07-11 | 半導體能源研究所股份有限公司 | 半導體記憶裝置 |
| CN103717787B (zh) | 2011-07-26 | 2016-08-24 | 三菱瓦斯化学株式会社 | 铜/钼系多层薄膜用蚀刻液 |
| JP2013047361A (ja) * | 2011-08-29 | 2013-03-07 | Mitsubishi Materials Corp | スパッタリングターゲット及びその製造方法並びに該ターゲットを用いた薄膜、該薄膜を備える薄膜シート、積層シート |
| JP5930374B2 (ja) * | 2012-02-08 | 2016-06-08 | 日本特殊陶業株式会社 | スパッタリングターゲット及びその製造方法 |
| KR20130105392A (ko) * | 2012-03-14 | 2013-09-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9553201B2 (en) | 2012-04-02 | 2017-01-24 | Samsung Display Co., Ltd. | Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor |
| KR20130111874A (ko) * | 2012-04-02 | 2013-10-11 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 표시 장치, 그리고 박막 트랜지스터의 제조 방법 |
| US9793444B2 (en) | 2012-04-06 | 2017-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US9711110B2 (en) * | 2012-04-06 | 2017-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising grayscale conversion portion and display portion |
| TWI650580B (zh) | 2012-05-09 | 2019-02-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| TWI588540B (zh) | 2012-05-09 | 2017-06-21 | 半導體能源研究所股份有限公司 | 顯示裝置和電子裝置 |
| JP2014027263A (ja) | 2012-06-15 | 2014-02-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| WO2014027618A1 (ja) * | 2012-08-13 | 2014-02-20 | 日本ゼオン株式会社 | 薄膜トランジスタ |
| WO2014168224A1 (ja) | 2013-04-12 | 2014-10-16 | 日立金属株式会社 | 酸化物半導体ターゲット、酸化物半導体膜及びその製造方法、並びに薄膜トランジスタ |
| KR102090289B1 (ko) | 2013-05-30 | 2020-04-16 | 삼성디스플레이 주식회사 | 산화물 스퍼터링 타겟, 이를 이용한 박막 트랜지스터 및 그 제조 방법 |
| CN105659365B (zh) | 2013-10-30 | 2020-07-31 | 三菱瓦斯化学株式会社 | 实质上由锌、锡和氧组成的氧化物的蚀刻液和蚀刻方法 |
| US20150177311A1 (en) * | 2013-12-19 | 2015-06-25 | Intermolecular, Inc. | Methods and Systems for Evaluating IGZO with Respect to NBIS |
| WO2015104962A1 (ja) * | 2014-01-07 | 2015-07-16 | 三菱瓦斯化学株式会社 | 亜鉛とスズを含む酸化物のエッチング液およびエッチング方法 |
| JP6731147B2 (ja) * | 2015-08-10 | 2020-07-29 | 日立金属株式会社 | 酸化物スパッタリングターゲット材 |
| CN105655257A (zh) * | 2016-01-13 | 2016-06-08 | 深圳市华星光电技术有限公司 | 薄膜晶体管结构的制造方法 |
| JP2018022042A (ja) * | 2016-08-03 | 2018-02-08 | 三菱マテリアル株式会社 | 赤外線フィルター、Ｚｎ−Ｓｎ含有酸化物膜およびＺｎ−Ｓｎ含有酸化物スパッタリングターゲット |
| DE102020127831A1 (de) | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speicherarray-gatestrukturen |
| US11710790B2 (en) | 2020-05-29 | 2023-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array channel regions |
| DE102021101243A1 (de) | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Speicherblock-kanalregionen |
| US11695073B2 (en) * | 2020-05-29 | 2023-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array gate structures |
| US11640974B2 (en) | 2020-06-30 | 2023-05-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory array isolation structures |
| US11729987B2 (en) | 2020-06-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory array source/drain electrode structures |
| US11355516B2 (en) | 2020-07-16 | 2022-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| US11647634B2 (en) | 2020-07-16 | 2023-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional memory device and method |
| CN120903932B (zh) * | 2025-10-13 | 2025-12-12 | 洛阳晶联光电材料有限责任公司 | 一种氧化锡基复合靶材及其制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3543898B2 (ja) * | 1996-09-09 | 2004-07-21 | 三井化学株式会社 | エッチング用ガスおよびその製造方法 |
| US20010008227A1 (en) * | 1997-08-08 | 2001-07-19 | Mitsuru Sadamoto | Dry etching method of metal oxide/photoresist film laminate |
| US20050017244A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
| US7863611B2 (en) * | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| EP1815530B1 (en) * | 2004-11-10 | 2021-02-17 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
| JP2006196200A (ja) * | 2005-01-11 | 2006-07-27 | Idemitsu Kosan Co Ltd | 透明電極及びその製造方法 |
| JP2006194926A (ja) * | 2005-01-11 | 2006-07-27 | Idemitsu Kosan Co Ltd | 透明電極の製造方法 |
| KR101211747B1 (ko) * | 2005-09-22 | 2012-12-12 | 이데미쓰 고산 가부시키가이샤 | 산화물 재료 및 스퍼터링 타겟 |
| JP5395994B2 (ja) * | 2005-11-18 | 2014-01-22 | 出光興産株式会社 | 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ |
| JP4552950B2 (ja) * | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
| JP2007250369A (ja) * | 2006-03-16 | 2007-09-27 | Sumitomo Chemical Co Ltd | 透明導電性膜およびその製造方法 |
| CN103274608A (zh) * | 2007-05-07 | 2013-09-04 | 出光兴产株式会社 | 半导体薄膜、半导体薄膜的制备方法和半导体元件 |
| US20090075421A1 (en) * | 2007-09-19 | 2009-03-19 | Hewlett-Packard Development Company, L.P. | Wet etching of zinc tin oxide thin films |
| JP2009123957A (ja) * | 2007-11-15 | 2009-06-04 | Sumitomo Chemical Co Ltd | 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ |
| JP5269501B2 (ja) * | 2008-07-08 | 2013-08-21 | 出光興産株式会社 | 酸化物焼結体及びそれからなるスパッタリングターゲット |
-
2009
- 2009-04-13 JP JP2009096937A patent/JP5724157B2/ja active Active
-
2010
- 2010-04-09 US US12/662,305 patent/US20100330738A1/en not_active Abandoned
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