JP5724157B2 - 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 - Google Patents

酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 Download PDF

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JP5724157B2
JP5724157B2 JP2009096937A JP2009096937A JP5724157B2 JP 5724157 B2 JP5724157 B2 JP 5724157B2 JP 2009096937 A JP2009096937 A JP 2009096937A JP 2009096937 A JP2009096937 A JP 2009096937A JP 5724157 B2 JP5724157 B2 JP 5724157B2
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oxide semiconductor
oxide
target
manufacturing
film
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JP2010248547A (ja
JP2010248547A5 (https=
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内山　博幸
博幸 内山
裕紀 若菜
裕紀 若菜
哲史 河村
哲史 河村
ふみ 栗田
ふみ 栗田
英子 福島
英子 福島
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Proterial Ltd
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Hitachi Metals Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
JP2009096937A 2009-04-13 2009-04-13 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法 Active JP5724157B2 (ja)

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JP2009096937A JP5724157B2 (ja) 2009-04-13 2009-04-13 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法
US12/662,305 US20100330738A1 (en) 2009-04-13 2010-04-09 Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same

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JP2009096937A JP5724157B2 (ja) 2009-04-13 2009-04-13 酸化物半導体ターゲット及びそれを用いた酸化物半導体装置の製造方法

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JP2010248547A5 JP2010248547A5 (https=) 2012-05-10
JP5724157B2 true JP5724157B2 (ja) 2015-05-27

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