JP2015519745A5 - - Google Patents

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Publication number
JP2015519745A5
JP2015519745A5 JP2015510711A JP2015510711A JP2015519745A5 JP 2015519745 A5 JP2015519745 A5 JP 2015519745A5 JP 2015510711 A JP2015510711 A JP 2015510711A JP 2015510711 A JP2015510711 A JP 2015510711A JP 2015519745 A5 JP2015519745 A5 JP 2015519745A5
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JP
Japan
Prior art keywords
metal oxide
oxide semiconductor
semiconductor layer
reducing agent
layer
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JP2015510711A
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English (en)
Japanese (ja)
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JP6077109B2 (ja
JP2015519745A (ja
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Priority claimed from PCT/EP2013/058390 external-priority patent/WO2013167374A1/en
Publication of JP2015519745A publication Critical patent/JP2015519745A/ja
Publication of JP2015519745A5 publication Critical patent/JP2015519745A5/ja
Application granted granted Critical
Publication of JP6077109B2 publication Critical patent/JP6077109B2/ja
Expired - Fee Related legal-status Critical Current
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JP2015510711A 2012-05-09 2013-04-23 金属酸化物半導体層の電気伝導性を増加させる方法 Expired - Fee Related JP6077109B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644855P 2012-05-09 2012-05-09
US61/644,855 2012-05-09
US201261699146P 2012-09-10 2012-09-10
US61/699,146 2012-09-10
PCT/EP2013/058390 WO2013167374A1 (en) 2012-05-09 2013-04-23 Method for increasing the electrical conductivity of metal oxide semiconductor layers

Publications (3)

Publication Number Publication Date
JP2015519745A JP2015519745A (ja) 2015-07-09
JP2015519745A5 true JP2015519745A5 (https=) 2016-03-17
JP6077109B2 JP6077109B2 (ja) 2017-02-08

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JP2015510711A Expired - Fee Related JP6077109B2 (ja) 2012-05-09 2013-04-23 金属酸化物半導体層の電気伝導性を増加させる方法

Country Status (5)

Country Link
JP (1) JP6077109B2 (https=)
KR (1) KR102056407B1 (https=)
CN (1) CN104272461B (https=)
TW (1) TWI593118B (https=)
WO (1) WO2013167374A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI548100B (zh) * 2015-01-08 2016-09-01 友達光電股份有限公司 薄膜電晶體、顯示面板以及其製造方法
TWI649900B (zh) * 2015-02-04 2019-02-01 Everlight Electronics Co., Ltd. Ｌｅｄ封裝結構及其製造方法
KR102522595B1 (ko) 2016-04-29 2023-04-17 삼성디스플레이 주식회사 트랜지스터 패널 및 그 제조 방법
CN106024608B (zh) * 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106941082B (zh) * 2017-03-21 2020-02-28 京东方科技集团股份有限公司 氧化物半导体及氧化物薄膜晶体管制备方法和显示面板
WO2018215878A1 (ja) * 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN107706199B (zh) * 2017-09-30 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种薄膜晶体管阵列基板的制作方法
US10818801B2 (en) * 2017-12-29 2020-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin-film transistor and manufacturing method thereof
CN108172630A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置
CN112420849B (zh) * 2020-11-09 2024-08-20 昆山龙腾光电股份有限公司 金属氧化物薄膜晶体管及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5475097A (en) * 1977-11-26 1979-06-15 Matsushita Electric Ind Co Ltd Providing lower resistance of conductive material
KR100958006B1 (ko) * 2008-06-18 2010-05-17 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2010010175A (ja) * 2008-06-24 2010-01-14 Konica Minolta Holdings Inc 薄膜トランジスタおよび薄膜トランジスタの製造方法
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP3540772A1 (en) * 2009-09-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102939658B (zh) * 2010-06-01 2014-03-26 夏普株式会社 薄膜晶体管
US8895978B2 (en) * 2010-07-02 2014-11-25 Advanced Interconnect Materials, Llc Semiconductor device
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置

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