KR102056407B1 - 금속 산화물 반도체층의 전기 전도도를 증가시키기 위한 방법 - Google Patents

금속 산화물 반도체층의 전기 전도도를 증가시키기 위한 방법 Download PDF

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KR102056407B1
KR102056407B1 KR1020147029865A KR20147029865A KR102056407B1 KR 102056407 B1 KR102056407 B1 KR 102056407B1 KR 1020147029865 A KR1020147029865 A KR 1020147029865A KR 20147029865 A KR20147029865 A KR 20147029865A KR 102056407 B1 KR102056407 B1 KR 102056407B1
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South Korea
Prior art keywords
metal oxide
oxide semiconductor
semiconductor layer
layer
reducing
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Korean (ko)
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KR20150018501A (ko
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로버트 뮐러
Original Assignee
아이엠이씨 브이제트더블유
네덜란제 오르가니자티에 포오르 토에게파스트-나투우르베텐샤펠리즈크 온데르조에크 테엔오
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020147029865A 2012-05-09 2013-04-23 금속 산화물 반도체층의 전기 전도도를 증가시키기 위한 방법 Expired - Fee Related KR102056407B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644855P 2012-05-09 2012-05-09
US61/644,855 2012-05-09
US201261699146P 2012-09-10 2012-09-10
US61/699,146 2012-09-10
PCT/EP2013/058390 WO2013167374A1 (en) 2012-05-09 2013-04-23 Method for increasing the electrical conductivity of metal oxide semiconductor layers

Publications (2)

Publication Number Publication Date
KR20150018501A KR20150018501A (ko) 2015-02-23
KR102056407B1 true KR102056407B1 (ko) 2019-12-16

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KR1020147029865A Expired - Fee Related KR102056407B1 (ko) 2012-05-09 2013-04-23 금속 산화물 반도체층의 전기 전도도를 증가시키기 위한 방법

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JP (1) JP6077109B2 (https=)
KR (1) KR102056407B1 (https=)
CN (1) CN104272461B (https=)
TW (1) TWI593118B (https=)
WO (1) WO2013167374A1 (https=)

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TWI548100B (zh) * 2015-01-08 2016-09-01 友達光電股份有限公司 薄膜電晶體、顯示面板以及其製造方法
TWI649900B (zh) * 2015-02-04 2019-02-01 Everlight Electronics Co., Ltd. Ｌｅｄ封裝結構及其製造方法
KR102522595B1 (ko) 2016-04-29 2023-04-17 삼성디스플레이 주식회사 트랜지스터 패널 및 그 제조 방법
CN106024608B (zh) * 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106941082B (zh) * 2017-03-21 2020-02-28 京东方科技集团股份有限公司 氧化物半导体及氧化物薄膜晶体管制备方法和显示面板
WO2018215878A1 (ja) * 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN107706199B (zh) * 2017-09-30 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种薄膜晶体管阵列基板的制作方法
US10818801B2 (en) * 2017-12-29 2020-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin-film transistor and manufacturing method thereof
CN108172630A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置
CN112420849B (zh) * 2020-11-09 2024-08-20 昆山龙腾光电股份有限公司 金属氧化物薄膜晶体管及其制作方法

Citations (2)

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US20090315026A1 (en) * 2008-06-18 2009-12-24 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same, and flat panel display device haviing the same
US20120001167A1 (en) * 2010-07-05 2012-01-05 Sony Corporation Thin film transistor and display device

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JPS5475097A (en) * 1977-11-26 1979-06-15 Matsushita Electric Ind Co Ltd Providing lower resistance of conductive material
JP2010010175A (ja) * 2008-06-24 2010-01-14 Konica Minolta Holdings Inc 薄膜トランジスタおよび薄膜トランジスタの製造方法
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP3540772A1 (en) * 2009-09-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102939658B (zh) * 2010-06-01 2014-03-26 夏普株式会社 薄膜晶体管
US8895978B2 (en) * 2010-07-02 2014-11-25 Advanced Interconnect Materials, Llc Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090315026A1 (en) * 2008-06-18 2009-12-24 Samsung Mobile Display Co., Ltd. Thin film transistor, method of manufacturing the same, and flat panel display device haviing the same
US20120001167A1 (en) * 2010-07-05 2012-01-05 Sony Corporation Thin film transistor and display device

Also Published As

Publication number Publication date
JP6077109B2 (ja) 2017-02-08
WO2013167374A1 (en) 2013-11-14
KR20150018501A (ko) 2015-02-23
TWI593118B (zh) 2017-07-21
JP2015519745A (ja) 2015-07-09
CN104272461A (zh) 2015-01-07
TW201403828A (zh) 2014-01-16
CN104272461B (zh) 2017-08-08

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