CN110190031B - 一种薄膜晶体管基板的制备方法 - Google Patents

一种薄膜晶体管基板的制备方法 Download PDF

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CN110190031B
CN110190031B CN201910413789.6A CN201910413789A CN110190031B CN 110190031 B CN110190031 B CN 110190031B CN 201910413789 A CN201910413789 A CN 201910413789A CN 110190031 B CN110190031 B CN 110190031B
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李子然
章仟益
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明提供一种薄膜晶体管基板的制备方法，包括以下步骤：提供一基板，在所述基板上沉积遮光层，刻蚀后形成遮光层图案；沉积缓冲层和有源层，刻蚀后形成有源层图案；在所述有源层图案上依次沉积栅极绝缘层和栅极层，对所述栅极层湿法刻蚀后形成栅极层图案；剥离掉光阻后，对所述栅极层图案表面干法刻蚀处理并在其表面生成保护层；然后以栅极层为掩模版干法刻蚀所述栅极绝缘层形成栅极绝缘层图案，并且对所述有源层图案非沟道区域进行导体化。此制备方法可以保证栅极层与栅极绝缘层图案在衬底基板上的正投影完全重合，使得有源层图案区域均可以被栅极层调控，提升了薄膜晶体管的开启电流，增强了薄膜晶体管的电学特性。

Description

一种薄膜晶体管基板的制备方法
技术领域
本发明涉及显示面板技术领域，特别涉及一种薄膜晶体管基板的制备方法。
背景技术
顶栅结构的TFT(Thin Film Transistor，薄膜晶体管)具有较低的寄生电容，较优良的电学特性，因此被广泛应用于显示装置中。
现有技术中在制作顶栅结构的TFT时，由于要采用到栅极与栅极绝缘图案的自对准工艺，而栅极通常采用湿法刻蚀工艺制作，栅极绝缘图案通过干法刻蚀工艺制作，在利用湿法刻蚀工艺刻蚀栅极时，由于刻蚀液会在光刻胶下面多刻蚀一小段距离，这样导致栅极相比栅极绝缘图案图案短出一小段距离，即栅极与栅极绝缘图案在衬底基板上的正投影不能完全重合。由于两侧均有一小段距离没有栅极在上方，导致缺少栅极覆盖的栅极绝缘图案下方的有源层图案没有被栅极调控，进而导致顶栅结构的TFT的开启电流不足，从而影响顶栅TFT的电学特性，使得显示装置的显示效果也受到影响。
因此，确有必要来开发一种新型的薄膜晶体管基板的制备方法，以克服现有技术的缺陷。
发明内容
本发明的一个目的是提供一种薄膜晶体管基板的制备方法，其能够解决现有技术中栅极绝缘层图案边缘处的上方一小段距离无栅极导致的薄膜晶体管的开启电流不足的问题。
为实现上述目的，本发明提供一种薄膜晶体管基板的制备方法，包括以下步骤：
步骤S1：提供一基板，在所述基板上沉积遮光层，刻蚀后形成遮光层图案；
步骤S2：沉积缓冲层和有源层，刻蚀后形成有源层图案；
步骤S3：在所述有源层图案上依次沉积栅极绝缘层和栅极层，对所述栅极层湿法刻蚀后形成栅极层图案；
步骤S4：剥离掉光阻后，对所述栅极层图案表面干法刻蚀处理并在其表面生成保护层；然后干法刻蚀所述栅极绝缘层形成栅极绝缘层图案，并且对所述有源层图案非沟道区域进行导体化；
步骤S5：沉积层间介质层，在所述层间介质层上设置第一过孔；
步骤S6：沉积源漏极层，刻蚀后形成源漏极层图案；
步骤S7：沉积有机层，在所述有机层上设置第二过孔；
步骤S8：沉积像素电极层，通过刻蚀形成像素电极。
其中，在所述步骤S4中，所述干法刻蚀所述栅极绝缘层形成栅极绝缘层图案，并且对所述有源层图案非沟道区域进行导体化包括：以所述栅极层图案为掩模版干法法刻蚀所述栅极绝缘层形成栅极绝缘层图案，并且对所述有源层图案非沟道区域进行导体化。此制备方法可以保证栅极层与栅极绝缘层图案在衬底基板上的正投影完全重合，即整个有源层图案均在栅极绝缘层下方，使得有源层图案区域均可以被栅极金属层调控，弥补了现有技术中栅极绝缘层图案边缘处的上方一小段距离无栅极的缺陷，提升了薄膜晶体管的开启电流，增强了薄膜晶体管的电学特性，提高了显示装置的显示效果。
进一步的，在其他实施方式中，其中所述有源层为氧化物半导体。
进一步的，在其他实施方式中，其中所述氧化物半导体为铟镓锌氧化物。
进一步的，在其他实施方式中，其中所述有源层的厚度为
Figure BDA0002063682090000021
进一步的，在其他实施方式中，其中所述栅极绝缘层采用的材料包括氧化硅或氮化硅。
进一步的，在其他实施方式中，其中在所述步骤S4中，对所述栅极层图案表面干法刻蚀处理采用氟系刻蚀气体。
进一步的，在其他实施方式中，其中所述氟系刻蚀气体为三氟化氮和氧气。
进一步的，在其他实施方式中，其中在所述步骤S4中，对有源层非沟道区域进行导体化采用氩或氦离子轰击的方法形成。
进一步的，在其他实施方式中，其中在所述步骤S4中，对所述有源层图案非沟道区域进行导体化采用铝或钙离子注入的方法形成。
进一步的，在其他实施方式中，其中所述保护层的厚度范围为
Figure BDA0002063682090000031
相对于现有技术，本发明的有益效果在于：本发明提供一种薄膜晶体管基板的制备方法，依次沉积有源层、栅极绝缘层和栅极层后，湿法蚀刻栅极层形成栅极层图案，然后对栅极层图案进行表面生成一层保护层，之后以栅极层为掩模版对栅极绝缘层蚀刻及裸漏的有源层进行导体化处理，此制备方法可以保证栅极层与栅极绝缘层图案在衬底基板上的正投影完全重合，即整个有源层图案均在栅极绝缘层下方，使得有源层图案区域均可以被栅极层调控，弥补了现有技术中栅极绝缘层图案边缘处的上方一小段距离无栅极的缺陷，提升了薄膜晶体管的开启电流，增强了薄膜晶体管的电学特性，提高了显示装置的显示效果。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例1提供的薄膜晶体管基板的制备方法的流程图；
图2为本发明实施例1提供的制备方法中步骤S1时薄膜晶体管基板的结构示意图；
图3为本发明实施例1提供的制备方法中步骤S2时薄膜晶体管基板的结构示意图；
图4为本发明实施例1提供的制备方法中步骤S3时薄膜晶体管基板的结构示意图；
图5为本发明实施例1提供的制备方法中步骤S4时薄膜晶体管基板的结构示意图；
图6为本发明实施例1提供的制备方法中步骤S5时薄膜晶体管基板的结构示意图；
图7为本发明实施例1提供的制备方法中步骤S6时薄膜晶体管基板的结构示意图；
图8为本发明实施例1提供的制备方法中步骤S7时薄膜晶体管基板的结构示意图；
图9为本发明实施例1提供的制备方法中步骤S8时薄膜晶体管基板的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
实施例1
本实施例提供一种薄膜晶体管基板的制备方法，请参阅图1，图1所示为本实施例提供的薄膜晶体管基板的制备方法的流程图，包括以下步骤：
步骤S1：提供一基板100，在基板100上沉积遮光层11，刻蚀后形成遮光层图案；
请参阅图2，图2所示为本实施例提供的制备方法中步骤S1时薄膜晶体管基板的结构示意图。
步骤S2：沉积缓冲层12和有源层13，刻蚀后形成有源层图案；
请参阅图3，图3所示为本实施例提供的制备方法中步骤S2时薄膜晶体管基板的结构示意图。
在本实施例中，有源层13具体可以采用氧化铟锡(ITO,Indium Tin Oxides)或氧化铟锌(IZO,Idium Zinc Oxides)或氧化铟镓锌(IGZO,Indium Gallium Zinc Oxides)等制作，在此不做限定。
在本实施例中，有源层13的厚度为
Figure BDA0002063682090000041
步骤S3：在有源层13图案上依次沉积栅极绝缘层14和栅极层15，对栅极层15湿法刻蚀后形成栅极层图案；
请参阅图4，图4所示为本实施例提供的制备方法中步骤S3时薄膜晶体管基板的结构示意图。
在本实施例中，栅极绝缘层14采用的材料可以氧化硅或氮化硅，在此不做限定。
步骤S4：剥离掉光阻后，对栅极层15图案表面干法刻蚀处理并在其表面生成保护层151；然后以栅极层15图案为掩模版干法刻蚀栅极绝缘层14形成栅极绝缘层14图案，并且对有源层13图案非沟道区域131进行导体化；
请参阅图5，图5所示为本实施例提供的制备方法中步骤S4时薄膜晶体管基板的结构示意图。
其中保护层151是为了保护栅极层15图案的，防止栅极层15图案在后续刻蚀栅极绝缘层14和对有源层13进行导体化时会被刻蚀到。
在本实施例中，保护层151的厚度范围为
Figure BDA0002063682090000051
对栅极层15图案表面干法刻蚀处理采用氟系刻蚀气体，具体为三氟化氮和氧气。
对有源层13图案非沟道区域131进行导体化可以采用氩或氦离子轰击的方法形成，也可以采用铝或钙离子注入的方法形成，在此不做限定。
以栅极层15图案为掩模版干法刻蚀栅极绝缘层14形成栅极绝缘层14图案，并且对有源层13图案非沟道区域131进行导体化，此制备步骤可以保证栅极绝缘层14和栅极层宽度相等，栅极层15与栅极绝缘层14在基板层100上的正投影完全重合，即整个有源层13均在栅极绝缘层14下方，使得有源层13区域均可以被栅极层调控，弥补了现有技术中栅极绝缘层图案边缘处的上方一小段距离无栅极的缺陷，提升了薄膜晶体管的开启电流，增强了薄膜晶体管的电学特性，提高了显示装置的显示效果。
步骤S5：沉积层间介质层16，在层间介质层16上设置第一过孔161；
请参阅图6，图6所示为本实施例提供的制备方法中步骤S5时薄膜晶体管基板的结构示意图。
步骤S6：沉积源漏极层17，刻蚀后形成源漏极层17图案；
请参阅图7，图7所示为本实施例提供的制备方法中步骤S6时薄膜晶体管基板的结构示意图。
步骤S7：沉积有机层18，在所述有机层上设置第二过孔181；
请参阅图8，图8所示为本实施例提供的制备方法中步骤S7时薄膜晶体管基板的结构示意图。
步骤S8：沉积像素电极层，通过刻蚀形成像素电极19；
请参阅图9，图9所示为本实施例提供的制备方法中步骤S8时薄膜晶体管基板的结构示意图。
本发明的有益效果在于：本发明提供一种薄膜晶体管基板的制备方法，依次沉积有源层、栅极绝缘层和栅极层后，湿法蚀刻栅极层形成栅极层图案，然后对栅极层图案进行表面生成一层保护层，之后以栅极层为掩模版对栅极绝缘层蚀刻及裸漏的有源层进行导体化处理，此制备方法可以保证栅极层与栅极绝缘层图案在衬底基板上的正投影完全重合，即整个有源层图案均在栅极绝缘层下方，使得有源层图案区域均可以被栅极层调控，弥补了现有技术中栅极绝缘层图案边缘处的上方一小段距离无栅极的缺陷，提升了薄膜晶体管的开启电流，增强了薄膜晶体管的电学特性，提高了显示装置的显示效果。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (9)

1.一种薄膜晶体管基板的制备方法，包括以下步骤：
步骤S1：提供一基板，在所述基板上沉积遮光层，刻蚀后形成遮光层图案；
步骤S2：沉积缓冲层和有源层，刻蚀后形成有源层图案；
步骤S3：在所述有源层图案上依次沉积栅极绝缘层和栅极层，对所述栅极层湿法刻蚀后形成栅极层图案；
步骤S4：剥离掉光阻后，采用氟系刻蚀气体对所述栅极层图案表面干法刻蚀处理并在其表面生成保护层；然后干法刻蚀所述栅极绝缘层形成栅极绝缘层图案，并且对所述有源层图案非沟道区域进行导体化；
步骤S5：沉积层间介质层，在所述层间介质层上设置第一过孔；
步骤S6：沉积源漏极层，刻蚀后形成源漏极层图案；
步骤S7：沉积有机层，在所述有机层上设置第二过孔；
步骤S8：沉积像素电极层，通过刻蚀形成像素电极。
2.根据权利要求1所述的制备方法，其特征在于，所述氟系刻蚀气体为三氟化氮和氧气。
3.根据权利要求1所述的制备方法，其特征在于，在所述步骤S4中，对有源层非沟道区域进行导体化采用氩或氦离子轰击的方法形成。
4.根据权利要求1所述的制备方法，其特征在于，对所述有源层图案非沟道区域进行导体化采用铝或钙离子注入的方法形成。
5.根据权利要求1所述的制备方法，其特征在于，所述有源层为氧化物半导体。
6.根据权利要求5所述的制备方法，其特征在于，所述氧化物半导体为铟镓锌氧化物。
7.根据权利要求1所述的制备方法，其特征在于，所述有源层的厚度为
Figure FDA0002961045780000011
Figure FDA0002961045780000012
8.根据权利要求1所述的制备方法，其特征在于，所述保护层的厚度范围为
Figure FDA0002961045780000013
Figure FDA0002961045780000014
9.根据权利要求1所述的制备方法，其特征在于，所述栅极绝缘层采用的材料包括氧化硅或氮化硅。
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