CN104272461B - 用于增加金属氧化物半导体层的电导率的方法 - Google Patents

用于增加金属氧化物半导体层的电导率的方法 Download PDF

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Publication number
CN104272461B
CN104272461B CN201380024133.6A CN201380024133A CN104272461B CN 104272461 B CN104272461 B CN 104272461B CN 201380024133 A CN201380024133 A CN 201380024133A CN 104272461 B CN104272461 B CN 104272461B
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China
Prior art keywords
oxide semiconductor
semiconductor layer
metal oxide
metal
layer
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Expired - Fee Related
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CN201380024133.6A
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English (en)
Chinese (zh)
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CN104272461A (zh
Inventor
R·穆勒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
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Interuniversitair Microelektronica Centrum vzw IMEC
Nederlandse Organisatie voor Toegepast Natuurwetenschappelijk Onderzoek TNO
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Publication of CN104272461A publication Critical patent/CN104272461A/zh
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Publication of CN104272461B publication Critical patent/CN104272461B/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201380024133.6A 2012-05-09 2013-04-23 用于增加金属氧化物半导体层的电导率的方法 Expired - Fee Related CN104272461B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644855P 2012-05-09 2012-05-09
US61/644,855 2012-05-09
US201261699146P 2012-09-10 2012-09-10
US61/699,146 2012-09-10
PCT/EP2013/058390 WO2013167374A1 (en) 2012-05-09 2013-04-23 Method for increasing the electrical conductivity of metal oxide semiconductor layers

Publications (2)

Publication Number Publication Date
CN104272461A CN104272461A (zh) 2015-01-07
CN104272461B true CN104272461B (zh) 2017-08-08

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CN201380024133.6A Expired - Fee Related CN104272461B (zh) 2012-05-09 2013-04-23 用于增加金属氧化物半导体层的电导率的方法

Country Status (5)

Country Link
JP (1) JP6077109B2 (https=)
KR (1) KR102056407B1 (https=)
CN (1) CN104272461B (https=)
TW (1) TWI593118B (https=)
WO (1) WO2013167374A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI548100B (zh) * 2015-01-08 2016-09-01 友達光電股份有限公司 薄膜電晶體、顯示面板以及其製造方法
TWI649900B (zh) * 2015-02-04 2019-02-01 Everlight Electronics Co., Ltd. Ｌｅｄ封裝結構及其製造方法
KR102522595B1 (ko) 2016-04-29 2023-04-17 삼성디스플레이 주식회사 트랜지스터 패널 및 그 제조 방법
CN106024608B (zh) * 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106941082B (zh) * 2017-03-21 2020-02-28 京东方科技集团股份有限公司 氧化物半导体及氧化物薄膜晶体管制备方法和显示面板
WO2018215878A1 (ja) * 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN107706199B (zh) * 2017-09-30 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种薄膜晶体管阵列基板的制作方法
US10818801B2 (en) * 2017-12-29 2020-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin-film transistor and manufacturing method thereof
CN108172630A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置
CN112420849B (zh) * 2020-11-09 2024-08-20 昆山龙腾光电股份有限公司 金属氧化物薄膜晶体管及其制作方法

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JPS5475097A (en) * 1977-11-26 1979-06-15 Matsushita Electric Ind Co Ltd Providing lower resistance of conductive material
KR100958006B1 (ko) * 2008-06-18 2010-05-17 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2010010175A (ja) * 2008-06-24 2010-01-14 Konica Minolta Holdings Inc 薄膜トランジスタおよび薄膜トランジスタの製造方法
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP3540772A1 (en) * 2009-09-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102939658B (zh) * 2010-06-01 2014-03-26 夏普株式会社 薄膜晶体管
US8895978B2 (en) * 2010-07-02 2014-11-25 Advanced Interconnect Materials, Llc Semiconductor device
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置

Also Published As

Publication number Publication date
KR102056407B1 (ko) 2019-12-16
JP6077109B2 (ja) 2017-02-08
WO2013167374A1 (en) 2013-11-14
KR20150018501A (ko) 2015-02-23
TWI593118B (zh) 2017-07-21
JP2015519745A (ja) 2015-07-09
CN104272461A (zh) 2015-01-07
TW201403828A (zh) 2014-01-16

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Granted publication date: 20170808

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