JP6077109B2 - 金属酸化物半導体層の電気伝導性を増加させる方法 - Google Patents

金属酸化物半導体層の電気伝導性を増加させる方法 Download PDF

Info

Publication number
JP6077109B2
JP6077109B2 JP2015510711A JP2015510711A JP6077109B2 JP 6077109 B2 JP6077109 B2 JP 6077109B2 JP 2015510711 A JP2015510711 A JP 2015510711A JP 2015510711 A JP2015510711 A JP 2015510711A JP 6077109 B2 JP6077109 B2 JP 6077109B2
Authority
JP
Japan
Prior art keywords
metal oxide
oxide semiconductor
semiconductor layer
layer
reducing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015510711A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015519745A5 (https=
JP2015519745A (ja
Inventor
ロベルト・ミュラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of JP2015519745A publication Critical patent/JP2015519745A/ja
Publication of JP2015519745A5 publication Critical patent/JP2015519745A5/ja
Application granted granted Critical
Publication of JP6077109B2 publication Critical patent/JP6077109B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2015510711A 2012-05-09 2013-04-23 金属酸化物半導体層の電気伝導性を増加させる方法 Expired - Fee Related JP6077109B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644855P 2012-05-09 2012-05-09
US61/644,855 2012-05-09
US201261699146P 2012-09-10 2012-09-10
US61/699,146 2012-09-10
PCT/EP2013/058390 WO2013167374A1 (en) 2012-05-09 2013-04-23 Method for increasing the electrical conductivity of metal oxide semiconductor layers

Publications (3)

Publication Number Publication Date
JP2015519745A JP2015519745A (ja) 2015-07-09
JP2015519745A5 JP2015519745A5 (https=) 2016-03-17
JP6077109B2 true JP6077109B2 (ja) 2017-02-08

Family

ID=48289090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015510711A Expired - Fee Related JP6077109B2 (ja) 2012-05-09 2013-04-23 金属酸化物半導体層の電気伝導性を増加させる方法

Country Status (5)

Country Link
JP (1) JP6077109B2 (https=)
KR (1) KR102056407B1 (https=)
CN (1) CN104272461B (https=)
TW (1) TWI593118B (https=)
WO (1) WO2013167374A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI548100B (zh) * 2015-01-08 2016-09-01 友達光電股份有限公司 薄膜電晶體、顯示面板以及其製造方法
TWI649900B (zh) * 2015-02-04 2019-02-01 Everlight Electronics Co., Ltd. Ｌｅｄ封裝結構及其製造方法
KR102522595B1 (ko) 2016-04-29 2023-04-17 삼성디스플레이 주식회사 트랜지스터 패널 및 그 제조 방법
CN106024608B (zh) * 2016-05-26 2019-04-02 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、衬底基板及显示装置
CN106941082B (zh) * 2017-03-21 2020-02-28 京东方科技集团股份有限公司 氧化物半导体及氧化物薄膜晶体管制备方法和显示面板
WO2018215878A1 (ja) * 2017-05-26 2018-11-29 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN107706199B (zh) * 2017-09-30 2020-05-05 深圳市华星光电半导体显示技术有限公司 一种薄膜晶体管阵列基板的制作方法
US10818801B2 (en) * 2017-12-29 2020-10-27 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin-film transistor and manufacturing method thereof
CN108172630A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 一种薄膜晶体管及其制备方法
CN113972236B (zh) * 2020-07-23 2024-12-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置
CN112420849B (zh) * 2020-11-09 2024-08-20 昆山龙腾光电股份有限公司 金属氧化物薄膜晶体管及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5475097A (en) * 1977-11-26 1979-06-15 Matsushita Electric Ind Co Ltd Providing lower resistance of conductive material
KR100958006B1 (ko) * 2008-06-18 2010-05-17 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP2010010175A (ja) * 2008-06-24 2010-01-14 Konica Minolta Holdings Inc 薄膜トランジスタおよび薄膜トランジスタの製造方法
US8367486B2 (en) * 2009-02-05 2013-02-05 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the transistor
EP2256795B1 (en) * 2009-05-29 2014-11-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for oxide semiconductor device
EP3540772A1 (en) * 2009-09-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Transistor and display device
JP5708910B2 (ja) * 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
CN102939658B (zh) * 2010-06-01 2014-03-26 夏普株式会社 薄膜晶体管
US8895978B2 (en) * 2010-07-02 2014-11-25 Advanced Interconnect Materials, Llc Semiconductor device
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置

Also Published As

Publication number Publication date
KR102056407B1 (ko) 2019-12-16
WO2013167374A1 (en) 2013-11-14
KR20150018501A (ko) 2015-02-23
TWI593118B (zh) 2017-07-21
JP2015519745A (ja) 2015-07-09
CN104272461A (zh) 2015-01-07
TW201403828A (zh) 2014-01-16
CN104272461B (zh) 2017-08-08

Similar Documents

Publication Publication Date Title
JP6077109B2 (ja) 金属酸化物半導体層の電気伝導性を増加させる方法
US10615266B2 (en) Thin-film transistor, manufacturing method thereof, and array substrate
US9748276B2 (en) Thin film transistor and method of manufacturing the same, array substrate and display device
JPWO2010098101A1 (ja) トランジスタ、トランジスタの製造方法及びその製造装置
CN103972299B (zh) 一种薄膜晶体管及其制作方法、显示基板、显示装置
CN107293493A (zh) 铟镓锌氧化物薄膜晶体管的制作方法
JP5291105B2 (ja) 電界効果型トランジスタの製造方法
JP2016527719A (ja) 金属酸化物半導体層の電気伝導性を改善する方法
US20210210529A1 (en) Thin film transistor, method for manufacturing thereof and display device
JPWO2010098100A1 (ja) トランジスタ、トランジスタの製造方法及びその製造装置
TWI611483B (zh) 薄膜電晶體製造方法及薄膜電晶體
CN104576746B (zh) 主动元件及其制作方法
US10236181B2 (en) Manufacturing system and method for forming a clean interface between a functional layer and a two-dimensional layeyed semiconductor
CN107820640A (zh) 阵列基板及其制造方法
CN103840003A (zh) 以三氧化二铝为栅介质的双栅石墨烯晶体管及其制备方法
CN112687554B (zh) 阵列基板制备方法、阵列基板及显示装置
CN107706242B (zh) 晶体管及其制造方法
KR102697352B1 (ko) 산화물 박막 트랜지스터의 제조 방법
CN118156141A (zh) 薄膜晶体管的制作方法
KR101073786B1 (ko) 박막트랜지스터의 제조방법
KR102693356B1 (ko) 미세 패터닝된 유기박막 트랜지스터 및 이의 제조방법
JP2010192501A (ja) スイッチング素子の製造方法
TWI619173B (zh) 電晶體及其製造方法
KR102123968B1 (ko) 점착성 폴리머를 이용한 산화물 박막 트랜지스터의 제조 방법
CN120018536A (zh) 一种高稳定性氧化物半导体场效应晶体管的制备方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160830

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161220

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170111

R150 Certificate of patent or registration of utility model

Ref document number: 6077109

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees